JPS5787123A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5787123A
JPS5787123A JP55161877A JP16187780A JPS5787123A JP S5787123 A JPS5787123 A JP S5787123A JP 55161877 A JP55161877 A JP 55161877A JP 16187780 A JP16187780 A JP 16187780A JP S5787123 A JPS5787123 A JP S5787123A
Authority
JP
Japan
Prior art keywords
emitter
ion
injecting
manufacture
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55161877A
Other languages
Japanese (ja)
Inventor
Kazumichi Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55161877A priority Critical patent/JPS5787123A/en
Publication of JPS5787123A publication Critical patent/JPS5787123A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To increase the thickness of a semiconductive layer by ion-injecting at 1X10<21>/cm<3> or more of constituent elements into the semiconductor layer whereby crystallizing it through annealing. CONSTITUTION:A base 3 is formed by injecting B ion into an n epitaxitial layer on an n<+> Si substrate and an n<+> emitter is formed by deffusing As through the opening of SiO24. More than 1X10<21>/cm<3> of Si ion is injected and crystallized by a treatment for more than one hour at 800 deg.C. By this method an emitter push-up disappears and so does a necking 6 and the emitter 5 comes up from the opening. Metallization can prevent the short-circuit between the emitter electrode and the base.
JP55161877A 1980-11-19 1980-11-19 Manufacture of semiconductor device Pending JPS5787123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55161877A JPS5787123A (en) 1980-11-19 1980-11-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55161877A JPS5787123A (en) 1980-11-19 1980-11-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5787123A true JPS5787123A (en) 1982-05-31

Family

ID=15743671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55161877A Pending JPS5787123A (en) 1980-11-19 1980-11-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5787123A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8794905B2 (en) 2008-04-08 2014-08-05 Ihi Corporation Turbocharger

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8794905B2 (en) 2008-04-08 2014-08-05 Ihi Corporation Turbocharger

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