JPS5790966A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5790966A JPS5790966A JP55166295A JP16629580A JPS5790966A JP S5790966 A JPS5790966 A JP S5790966A JP 55166295 A JP55166295 A JP 55166295A JP 16629580 A JP16629580 A JP 16629580A JP S5790966 A JPS5790966 A JP S5790966A
- Authority
- JP
- Japan
- Prior art keywords
- film
- chip
- onto
- thallium
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
- H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W42/25—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons against alpha rays, e.g. for outer space applications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01515—Forming coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE:To reduce an effect by alpha-rays, and to prevent a soft error of a memory, etc. by applying or adding a compound of lead or thallium onto a semiconductor chip or containing it in a resin material and sealing the chip. CONSTITUTION:The liquid obtained by mixing silica gel into a solution such as a thallium formic acid aqueous solution and uniformly dissolving the gel is applied onto the wafer 11, to the inside thereof a P-N junction 13, etc. are formed, to which electrode wiring 14 is executed through a SiO2 film 12 and which is coated with a protective film 15. The whole is heated at approximately 400 deg.C and an applying layer is changed into a SiO2 film 16 containing Ta, and the whole is sealed with resin or enclosed into a case. Or a mixed liquid of a solution such as the thallium formic acid aqueous solution and a silicon resin liquid is dropped onto the chip 21, which is fixed onto a case substrate 22 through a metallic layer 23 and connected by wires 24, to coat the chip, and the temperature of the resin film 25 is elevated and the film is solidified. Accordingly, since the substance having large radiation stopping power is uniformalized and shaped onto the chip as the film, radiation is damped, and malfunction can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55166295A JPS5790966A (en) | 1980-11-26 | 1980-11-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55166295A JPS5790966A (en) | 1980-11-26 | 1980-11-26 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5790966A true JPS5790966A (en) | 1982-06-05 |
| JPS6137787B2 JPS6137787B2 (en) | 1986-08-26 |
Family
ID=15828688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55166295A Granted JPS5790966A (en) | 1980-11-26 | 1980-11-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5790966A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6077447A (en) * | 1983-10-05 | 1985-05-02 | Fujitsu Ltd | Semiconductor device |
| JPS60134448A (en) * | 1983-12-23 | 1985-07-17 | Nippon Telegr & Teleph Corp <Ntt> | Package for semiconductor device |
| ITUB20155681A1 (en) * | 2015-11-18 | 2017-05-18 | St Microelectronics Srl | RADIATION-RESISTANT ELECTRONIC DEVICE AND METHOD TO PROTECT AN ELECTRONIC DEVICE FROM IONIZING RADIATION |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6150591U (en) * | 1984-09-08 | 1986-04-04 | ||
| JPS6183885U (en) * | 1984-11-08 | 1986-06-03 |
-
1980
- 1980-11-26 JP JP55166295A patent/JPS5790966A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6077447A (en) * | 1983-10-05 | 1985-05-02 | Fujitsu Ltd | Semiconductor device |
| JPS60134448A (en) * | 1983-12-23 | 1985-07-17 | Nippon Telegr & Teleph Corp <Ntt> | Package for semiconductor device |
| ITUB20155681A1 (en) * | 2015-11-18 | 2017-05-18 | St Microelectronics Srl | RADIATION-RESISTANT ELECTRONIC DEVICE AND METHOD TO PROTECT AN ELECTRONIC DEVICE FROM IONIZING RADIATION |
| US10319686B2 (en) | 2015-11-18 | 2019-06-11 | Stmicroelectronics S.R.L. | Radiation-hard electronic device and method for protecting an electronic device from ionizing radiation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6137787B2 (en) | 1986-08-26 |
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