JPS5792500A - Randam-access-memory having redundancy - Google Patents

Randam-access-memory having redundancy

Info

Publication number
JPS5792500A
JPS5792500A JP56158571A JP15857181A JPS5792500A JP S5792500 A JPS5792500 A JP S5792500A JP 56158571 A JP56158571 A JP 56158571A JP 15857181 A JP15857181 A JP 15857181A JP S5792500 A JPS5792500 A JP S5792500A
Authority
JP
Japan
Prior art keywords
column
spare
memory
defective
sector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56158571A
Other languages
English (en)
Inventor
Shiefuiirudo Iiton J Saajiento
Rudorufu Uuten Deibitsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inmos Corp
Original Assignee
Inmos Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22718253&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS5792500(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Inmos Corp filed Critical Inmos Corp
Publication of JPS5792500A publication Critical patent/JPS5792500A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP56158571A 1980-10-06 1981-10-05 Randam-access-memory having redundancy Pending JPS5792500A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/194,613 US4389715A (en) 1980-10-06 1980-10-06 Redundancy scheme for a dynamic RAM

Publications (1)

Publication Number Publication Date
JPS5792500A true JPS5792500A (en) 1982-06-09

Family

ID=22718253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56158571A Pending JPS5792500A (en) 1980-10-06 1981-10-05 Randam-access-memory having redundancy

Country Status (5)

Country Link
US (1) US4389715A (ja)
EP (2) EP0049629B1 (ja)
JP (1) JPS5792500A (ja)
CA (1) CA1160342A (ja)
DE (2) DE3177158D1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868296A (ja) * 1981-10-16 1983-04-23 Nec Corp 記憶装置
JPS59135700A (ja) * 1983-01-21 1984-08-03 Hitachi Micro Comput Eng Ltd 半導体記憶装置
JPS59152597A (ja) * 1983-02-18 1984-08-31 Nec Corp メモリ回路
JPS60103469A (ja) * 1983-11-09 1985-06-07 Toshiba Corp 半導体記憶装置の冗長部
JPS60130139A (ja) * 1983-12-16 1985-07-11 Fujitsu Ltd 半導体記憶装置
JPS62217498A (ja) * 1986-03-06 1987-09-24 Fujitsu Ltd 半導体記憶装置
JP2002269994A (ja) * 2001-03-09 2002-09-20 Oki Electric Ind Co Ltd アナログ半導体メモリの冗長メモリ回路
US7043672B2 (en) 1996-04-25 2006-05-09 Micron Technology, Inc. Layout for a semiconductor memory device having redundant elements
JP2010518540A (ja) * 2007-02-13 2010-05-27 インターナショナル・ビジネス・マシーンズ・コーポレーション アドレス指定可能な仮想電子ヒューズを含む電子ヒューズ装置及び方法

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US4670748A (en) * 1985-08-09 1987-06-02 Harris Corporation Programmable chip select decoder
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JPS63140550A (ja) * 1986-12-01 1988-06-13 Mitsubishi Electric Corp 冗長回路用電気ヒユ−ズ
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JP2776835B2 (ja) * 1988-07-08 1998-07-16 株式会社日立製作所 欠陥救済用の冗長回路を有する半導体メモリ
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JP2547633B2 (ja) * 1989-05-09 1996-10-23 三菱電機株式会社 半導体記憶装置
US6069814A (en) * 1989-05-26 2000-05-30 Texas Instruments Incorporated Multiple input buffers for address bits
US5471427A (en) * 1989-06-05 1995-11-28 Mitsubishi Denki Kabushiki Kaisha Circuit for repairing defective bit in semiconductor memory device and repairing method
JP2837433B2 (ja) 1989-06-05 1998-12-16 三菱電機株式会社 半導体記憶装置における不良ビット救済回路
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JP3325456B2 (ja) * 1996-05-22 2002-09-17 株式会社アドバンテスト メモリリペア方法ならびにそのメモリリペア方法が適用される電子ビームメモリリペア装置およびメモリ冗長回路
JP2632089B2 (ja) * 1990-06-07 1997-07-16 三菱電機株式会社 半導体回路装置
EP0469571B1 (en) * 1990-07-31 1997-11-12 Texas Instruments Incorporated Redundant semiconductor memory device
JP2632076B2 (ja) * 1990-08-02 1997-07-16 三菱電機株式会社 半導体記憶装置
JPH0831279B2 (ja) * 1990-12-20 1996-03-27 インターナショナル・ビジネス・マシーンズ・コーポレイション 冗長システム
KR940008208B1 (ko) * 1990-12-22 1994-09-08 삼성전자주식회사 반도체 메모리장치의 리던던트 장치 및 방법
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JPH07122076A (ja) * 1993-10-25 1995-05-12 Mitsubishi Electric Corp キャッシュメモリ
US5552740A (en) * 1994-02-08 1996-09-03 Micron Technology, Inc. N-channel voltage regulator
FR2715883B1 (fr) * 1994-02-10 1996-03-29 Snecma Procédé d'obtention d'une pièce circulaire métallique renforcée par des fibres.
KR0131721B1 (ko) * 1994-06-08 1998-04-15 김주용 반도체 소자의 컬럼 리던던시 장치
KR0174338B1 (ko) * 1994-11-30 1999-04-01 윌리엄 티. 엘리스 간단하게 테스트할 수 있는 구성을 갖는 랜덤 액세스 메모리
US5544113A (en) * 1994-11-30 1996-08-06 International Business Machines Corporation Random access memory having a flexible array redundancy scheme
US6108237A (en) * 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US5627786A (en) * 1995-02-10 1997-05-06 Micron Quantum Devices, Inc. Parallel processing redundancy scheme for faster access times and lower die area
US5642322A (en) * 1995-05-24 1997-06-24 Kawasaki Steel Corporation Layout of semiconductor memory and content-addressable memory
JP3782840B2 (ja) 1995-07-14 2006-06-07 株式会社ルネサステクノロジ 外部記憶装置およびそのメモリアクセス制御方法
KR0172844B1 (ko) * 1995-12-11 1999-03-30 문정환 반도체 메모리 소자의 리페어 회로
GB2312974A (en) * 1996-05-10 1997-11-12 Memory Corp Plc Memory replacement
US5732030A (en) * 1996-06-25 1998-03-24 Texas Instruments Incorporated Method and system for reduced column redundancy using a dual column select
US5754556A (en) * 1996-07-18 1998-05-19 Teradyne, Inc. Semiconductor memory tester with hardware accelerators
US5781717A (en) * 1996-09-19 1998-07-14 I-Cube, Inc. Dynamic spare column replacement memory system
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JP3796319B2 (ja) * 1997-03-24 2006-07-12 株式会社日立製作所 ダイナミック型ｒａｍ
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US5913928A (en) * 1997-05-09 1999-06-22 Micron Technology, Inc. Data compression test mode independent of redundancy
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US6072713A (en) * 1998-02-04 2000-06-06 Vlsi Technology, Inc. Data storage circuit using shared bit line and method therefor
US5966339A (en) * 1998-06-02 1999-10-12 International Business Machines Corporation Programmable/reprogrammable fuse
US6510503B2 (en) * 1998-07-27 2003-01-21 Mosaid Technologies Incorporated High bandwidth memory interface
JP2001143494A (ja) * 1999-03-19 2001-05-25 Toshiba Corp 半導体記憶装置
KR100399887B1 (ko) 1999-05-27 2003-09-29 주식회사 하이닉스반도체 반도체 메모리의 칼럼 구제 회로
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868296A (ja) * 1981-10-16 1983-04-23 Nec Corp 記憶装置
JPS59135700A (ja) * 1983-01-21 1984-08-03 Hitachi Micro Comput Eng Ltd 半導体記憶装置
JPS59152597A (ja) * 1983-02-18 1984-08-31 Nec Corp メモリ回路
JPS60103469A (ja) * 1983-11-09 1985-06-07 Toshiba Corp 半導体記憶装置の冗長部
JPS60130139A (ja) * 1983-12-16 1985-07-11 Fujitsu Ltd 半導体記憶装置
JPS62217498A (ja) * 1986-03-06 1987-09-24 Fujitsu Ltd 半導体記憶装置
US7043672B2 (en) 1996-04-25 2006-05-09 Micron Technology, Inc. Layout for a semiconductor memory device having redundant elements
JP2002269994A (ja) * 2001-03-09 2002-09-20 Oki Electric Ind Co Ltd アナログ半導体メモリの冗長メモリ回路
JP2010518540A (ja) * 2007-02-13 2010-05-27 インターナショナル・ビジネス・マシーンズ・コーポレーション アドレス指定可能な仮想電子ヒューズを含む電子ヒューズ装置及び方法

Also Published As

Publication number Publication date
DE3177158D1 (de) 1990-03-29
EP0180212A2 (en) 1986-05-07
DE3176222D1 (en) 1987-07-02
EP0049629B1 (en) 1987-05-27
EP0180212A3 (en) 1986-10-01
EP0180212B1 (en) 1990-02-21
CA1160342A (en) 1984-01-10
EP0049629A2 (en) 1982-04-14
EP0049629A3 (en) 1983-08-17
US4389715A (en) 1983-06-21

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