JPS5795680A - Photo sensor array device - Google Patents

Photo sensor array device

Info

Publication number
JPS5795680A
JPS5795680A JP55171004A JP17100480A JPS5795680A JP S5795680 A JPS5795680 A JP S5795680A JP 55171004 A JP55171004 A JP 55171004A JP 17100480 A JP17100480 A JP 17100480A JP S5795680 A JPS5795680 A JP S5795680A
Authority
JP
Japan
Prior art keywords
crystal
layer
electrode
detector
sensor array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55171004A
Other languages
Japanese (ja)
Other versions
JPS6336144B2 (en
Inventor
Ryoji Oritsuki
Hiromi Kanai
Kozo Odawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55171004A priority Critical patent/JPS5795680A/en
Publication of JPS5795680A publication Critical patent/JPS5795680A/en
Publication of JPS6336144B2 publication Critical patent/JPS6336144B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)

Abstract

PURPOSE:To obtain a photo sensor array with a high heat and humidity resistance using non-crystal Si containing 5-25% H as a semiconductor device. CONSTITUTION:An electrode 15 for a blocking diode is made by successively evaporating Cr, Pt on an individual electrode 9 on a glass plate 8. A detector 16 of non-crystal Si of a high resistance is made on the glass plate 8 including the electrode 15. An ohmic connection layer 17 of an n type non-crystal Si is formed on the detector 16 and a common electrode 12 of In2O3 is attached. In this construction, non-crystal Si containing 5-25% of H is used for the detector 16 and for the ohmic connection layer 17. A Schottky barrier is formed between the layer 15 and the layer 16 and the blocking diode is constituted, greatly improving heat and humidity resistance and also enables the detection of electric signal with a high S/N ratio if the photo detection layer 16 is made about 10<9>-10<12>OMEGAcm.
JP55171004A 1980-12-05 1980-12-05 Photo sensor array device Granted JPS5795680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55171004A JPS5795680A (en) 1980-12-05 1980-12-05 Photo sensor array device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55171004A JPS5795680A (en) 1980-12-05 1980-12-05 Photo sensor array device

Publications (2)

Publication Number Publication Date
JPS5795680A true JPS5795680A (en) 1982-06-14
JPS6336144B2 JPS6336144B2 (en) 1988-07-19

Family

ID=15915314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55171004A Granted JPS5795680A (en) 1980-12-05 1980-12-05 Photo sensor array device

Country Status (1)

Country Link
JP (1) JPS5795680A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910268A (en) * 1982-07-09 1984-01-19 Fuji Xerox Co Ltd Manufacture of photoelectric conversion element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5539404A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state pickup device
JPS56150877A (en) * 1980-04-23 1981-11-21 Canon Inc Photoelectric converter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5539404A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state pickup device
JPS56150877A (en) * 1980-04-23 1981-11-21 Canon Inc Photoelectric converter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910268A (en) * 1982-07-09 1984-01-19 Fuji Xerox Co Ltd Manufacture of photoelectric conversion element

Also Published As

Publication number Publication date
JPS6336144B2 (en) 1988-07-19

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