JPS6484176A - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

Info

Publication number
JPS6484176A
JPS6484176A JP62243317A JP24331787A JPS6484176A JP S6484176 A JPS6484176 A JP S6484176A JP 62243317 A JP62243317 A JP 62243317A JP 24331787 A JP24331787 A JP 24331787A JP S6484176 A JPS6484176 A JP S6484176A
Authority
JP
Japan
Prior art keywords
crystal
electrode
cdte
electrodes
radiation detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62243317A
Other languages
Japanese (ja)
Inventor
Kouichi Oomori
Tetsuo Ootsuchi
Hiroshi Tsutsui
Matsuki Baba
Masanori Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62243317A priority Critical patent/JPS6484176A/en
Publication of JPS6484176A publication Critical patent/JPS6484176A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To stabilize detection characteristics by employing the laminate constitution of an electroless plating layer and a vapor-deposited layer for a least of either of signal lead-out electrodes formed on both flanks of semiconductor crystal. CONSTITUTION:The opposite surfaces of p type CdTe crystal 1 with 10<7>-10<10> OMEGAcm resistivity are etched and Pt ohmic electrodes 2 are formed on the surfaces by platinum electroless plating. the an Al electrode 3 is vapor-deposited on at least either of the electrodes by resistance heating EB, sputtering, etc., to about 1 phim thickness and then a CdTe radiation detector because the whole of the p-CdTe crystal 1 is a felt layer the film thickness of the electrode 3 is 1 mum, so a lead 4 can be connected to the electrode by wire bonding which is generally used in a semiconductor manufacturing process and charges generated in the crystal 1 by the radiation are easily led out.
JP62243317A 1987-09-28 1987-09-28 Semiconductor radiation detector Pending JPS6484176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62243317A JPS6484176A (en) 1987-09-28 1987-09-28 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62243317A JPS6484176A (en) 1987-09-28 1987-09-28 Semiconductor radiation detector

Publications (1)

Publication Number Publication Date
JPS6484176A true JPS6484176A (en) 1989-03-29

Family

ID=17102038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62243317A Pending JPS6484176A (en) 1987-09-28 1987-09-28 Semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS6484176A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0231184A (en) * 1988-07-20 1990-02-01 Olympus Optical Co Ltd Device for detecting two-dimensional charged particle
JPH03201487A (en) * 1989-12-28 1991-09-03 Nippon Mining Co Ltd Manufacture of semiconductor radiation sensor
US6458254B2 (en) * 1997-09-25 2002-10-01 Midwest Research Institute Plasma & reactive ion etching to prepare ohmic contacts
JP2008039777A (en) * 2006-08-03 2008-02-21 Ge Medical Systems Israel Ltd Method and apparatus for reducing internal polarization of imaging device
WO2016002455A1 (en) * 2014-07-03 2016-01-07 Jx日鉱日石金属株式会社 Radiation detector ubm electrode structure body, radiation detector, and method of manufacturing same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0231184A (en) * 1988-07-20 1990-02-01 Olympus Optical Co Ltd Device for detecting two-dimensional charged particle
JPH03201487A (en) * 1989-12-28 1991-09-03 Nippon Mining Co Ltd Manufacture of semiconductor radiation sensor
US6458254B2 (en) * 1997-09-25 2002-10-01 Midwest Research Institute Plasma & reactive ion etching to prepare ohmic contacts
JP2008039777A (en) * 2006-08-03 2008-02-21 Ge Medical Systems Israel Ltd Method and apparatus for reducing internal polarization of imaging device
WO2016002455A1 (en) * 2014-07-03 2016-01-07 Jx日鉱日石金属株式会社 Radiation detector ubm electrode structure body, radiation detector, and method of manufacturing same
US9823362B2 (en) 2014-07-03 2017-11-21 Jx Nippon Mining & Metals Corporation Radiation detector UBM electrode structure body, radiation detector, and method of manufacturing same

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