JPS58100231A - Method for manufacturing magnetic recording media - Google Patents

Method for manufacturing magnetic recording media

Info

Publication number
JPS58100231A
JPS58100231A JP56199271A JP19927181A JPS58100231A JP S58100231 A JPS58100231 A JP S58100231A JP 56199271 A JP56199271 A JP 56199271A JP 19927181 A JP19927181 A JP 19927181A JP S58100231 A JPS58100231 A JP S58100231A
Authority
JP
Japan
Prior art keywords
vapor
angle
mask
substrate
coercive force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56199271A
Other languages
Japanese (ja)
Other versions
JPH0334130B2 (en
Inventor
Koichi Shinohara
紘一 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56199271A priority Critical patent/JPS58100231A/en
Publication of JPS58100231A publication Critical patent/JPS58100231A/en
Publication of JPH0334130B2 publication Critical patent/JPH0334130B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/85Coating a support with a magnetic layer by vapour deposition

Landscapes

  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To make the coercive force of a magnetic layer constant even when a long-sized substrate is used by setting the vapor ejecting angle to a part which specified the vapor ejecting angle for the formation of the magnetic layer of a mask greater than that to the substrate. CONSTITUTION:A vacuum tank 8 is partitioned by a partitioning plate 9 into an upper room 10 and a lower room 11, which are evacuated independently by exhausting devices 12 and 13. A mask 14 limits the ejecting angle of vapor to a substrate 1 and when the center of a vapor source 5 is P and the tip of the mask 14 is M, the angle theta1 between a normal at the intersection of the prolongation of the segment PM and the substrate 1 on the peripheral side surface of a can 3 and the segment PM is the ejecting angle of vapor. Then, the angle thetaM to a normal at the tip point M of the mask 14 is the incidence angle of vapor to be deposited on the mask 14. When theta1<thetaM, the shape of the mask 14 is not limited specially and may be arc-shaped, and in a polygonal shape of a plane.

Description

【発明の詳細な説明】 本発明は、強磁性金属薄膜を記録層とする磁気記録媒体
の製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a magnetic recording medium having a ferromagnetic metal thin film as a recording layer.

磁気記鐙の高密度化の要求に対して、これまで磁気記録
媒体の抗磁力を大きくすることで対応してきたが、より
短波長化が進むに従って、磁化されるのは、媒体の表面
近くだけになるため、抗磁力の増大のみでは出力を大き
くできず、飽和磁束密度の大きい材料が使用されるよう
になって来ている。そのひとつは、従来の塗布形の延長
上で、2 、 バインダ等の非磁性材料で稀釈されるものの、本質的に
飽和磁束密度の大きい、鉄等の強磁性金属または合金の
微粒子を、酸化鉄の代りに用いる磁気記録媒体で、池の
一つは、バインダを用いない、強磁性金属薄膜を磁気記
録層とする媒体で、前記薄膜の形成に真空蒸着を用いる
ことから蒸着テープという名称で一部実用に供されるに
至っている。
Until now, the demand for higher density magnetic recording stirrups has been met by increasing the coercive force of magnetic recording media, but as wavelengths become shorter, only the areas near the surface of the media are magnetized. Therefore, the output cannot be increased only by increasing the coercive force, and materials with a high saturation magnetic flux density are being used. One is an extension of the conventional coating type, and 2. Fine particles of ferromagnetic metals such as iron or alloys, which are diluted with a non-magnetic material such as a binder but have essentially a high saturation magnetic flux density, are coated with iron oxide. One of the magnetic recording media used in place of the above is a medium that does not use a binder and has a ferromagnetic metal thin film as its magnetic recording layer.Since vacuum deposition is used to form the thin film, it is commonly called a vapor-deposited tape. Some parts have been put into practical use.

この蒸着テープは、歴史も浅く、工業規模での検荊改良
を今後に待つ課題も多くある。
This vapor-deposited tape has a short history, and there are many issues that need to be improved on an industrial scale.

そのひとつは抗磁力の制御である。特に大きい抗磁力を
安定に制御する技術開発は重要なテーマである。
One of them is the control of coercive force. In particular, the development of technology to stably control large coercive forces is an important theme.

蒸着法で安定に抗磁力を制御できる可能性のあるのは特
公昭41−19389号公報に開示されているいわゆる
斜方蒸着法である。
A vapor deposition method that has the possibility of stably controlling the coercive force is the so-called oblique vapor deposition method disclosed in Japanese Patent Publication No. 41-19389.

しかし、この方法を実施するにあたっての幡点け、蒸着
効率が低いことと、入射角が変化すると抗磁力が変化す
るという現象が起こり、抗磁力が大きくなるほど、この
現象が顕著になることである。
However, the problem with carrying out this method is that the vapor deposition efficiency is low, and that the coercive force changes as the incident angle changes, and this phenomenon becomes more pronounced as the coercive force increases.

3・ 本発明は、入射角変化により生ずる抗磁力変化を実用レ
ベルに抑えることができる方法を提供するものであり、
以下、図面を用いて詳述する。
3. The present invention provides a method that can suppress changes in coercive force caused by changes in incident angle to a practical level,
The details will be explained below using the drawings.

第1図は本発明の方法を実施するための蒸着装置の要部
断面を示すものである。ここでは二基構成の例を示して
いるが、本発明の方法を実施する上でこれにこだわるこ
と々く、以下に述べる要件を満たす装置であれば使用す
ることができる。
FIG. 1 shows a cross-section of essential parts of a vapor deposition apparatus for carrying out the method of the present invention. Although an example of a two-unit configuration is shown here, any device that satisfies the requirements described below can be used without being particular about this when implementing the method of the present invention.

高分子成形基板(以下単に基板という)1は送り出し軸
2より回転キャン3に沿って移動し、巻取軸4にて巻き
あげられるように構成されている。
A polymer molded substrate (hereinafter simply referred to as a substrate) 1 is configured to move from a feed shaft 2 along a rotary can 3 and be wound up on a winding shaft 4.

この図では、巻取系の他の要素であるフローローラやエ
キスパンダローラ等については省略されているが、必要
に応じて構成要素となるのはいうまでもない。
In this figure, other elements of the winding system, such as a flow roller and an expander roller, are omitted, but it goes without saying that they may be included as necessary.

回転キャン3は機能として冷却支持を兼ねるもので、そ
れに代えて、たとえば5US304のステルス#l薄板
で構成したエンドレスベルトを用いてもよい。熱論、こ
のベルトも冷却して使用する。
The rotary can 3 also serves as a cooling support, and instead of this, an endless belt made of, for example, 5US304 stealth #1 thin plate may be used. Heat theory: This belt should also be cooled before use.

また1繰り返し蒸着を行うために複数個のキャンを用い
ることもできる。
Furthermore, a plurality of cans can be used to perform one repetition of vapor deposition.

回転キャン3と対向して配設される蒸発源6は、公知の
ものを使用することができるけれども、発明者らの実験
によれば電子ビーム加熱がもっとも好捷しい。図では、
蒸発源5を容器6と蒸着相利7で模式的に示してあり、
電子源については図示を省略している。
As the evaporation source 6 disposed opposite the rotating can 3, any known evaporation source can be used, but according to experiments conducted by the inventors, electron beam heating is the most suitable. In the diagram,
The evaporation source 5 is schematically shown as a container 6 and a evaporation source 7,
Illustration of the electron source is omitted.

真空槽8内は、仕切板9によって」二基1oと下室11
とに二分されている。王室10と下室11は通常独立し
た排気装置12.13でそれぞれ排気される。マスク1
4は基板1への蒸気の入射角度を制限するだめのもので
あるが、蒸発源6の中心をPとし、マスク14の先端を
Mとしたとき。
The interior of the vacuum chamber 8 is divided into two chambers 1o and a lower chamber 11 by a partition plate 9.
It is divided into two parts. The royal chamber 10 and the lower chamber 11 are usually evacuated by separate exhaust devices 12,13, respectively. mask 1
Reference numeral 4 serves to limit the angle of incidence of vapor onto the substrate 1, and when the center of the evaporation source 6 is P and the tip of the mask 14 is M.

PMの延長がキャン3の周側面一にの基板1と交わる点
にたてた法線とPMとのなす角θ1 が蒸気の入射角を
表わすものである。
The angle θ1 formed by the PM and a normal line drawn at the point where the extension of the PM intersects with the substrate 1 on the circumferential side of the can 3 represents the incident angle of vapor.

また、マスク14の先端のM点にたてた法線とのなす角
度θMが、マスク14へ蒸着される蒸気の入射角である
。θlとθMとはθ1<19Mなる関係にあることが本
発明の要件であり、これを満足すれば、マスク14の形
状について特に制約がなく1円弧の一部であってもよい
し、直線の組み合わせであってもよい。
Further, the angle θM formed with the normal line made at point M at the tip of the mask 14 is the incident angle of the vapor deposited onto the mask 14. It is a requirement of the present invention that θl and θM have the relationship θ1<19M, and as long as this is satisfied, there is no particular restriction on the shape of the mask 14, and it may be a part of an arc or a straight line. It may be a combination.

以下、本発明の実施例について詳述する。Examples of the present invention will be described in detail below.

〔実施例1〕 ↓ 基板として幅500mm、厚さ10.6μmポリエチ1
− レンテレフタレートフイルムを使用し、第1図の・装置
にて入射角θ1=700.θM−80°(第1図参照)
で、C1Q80%−N120%の合金層を前記基↓ 板上に0.1μmの厚さ形成した。下室の真空度は、2
X10  Torrであった。得られた磁性層の抗[力
1’i:1050エルステッドで、B−H曲線の角形比
は0.96であった。
[Example 1] ↓ Polyethylene 1 with a width of 500 mm and a thickness of 10.6 μm as a substrate
- Using a lente terephthalate film, the incident angle θ1 = 700. θM-80° (see Figure 1)
Then, an alloy layer of 80% C1Q-120% N was formed on the substrate to a thickness of 0.1 μm. The degree of vacuum in the lower chamber is 2
It was X10 Torr. The obtained magnetic layer had a coercive force of 1'i:1050 Oersteds, and a squareness ratio of the BH curve was 0.96.

そして、比較のだめ0M−30°としたとと以外は、本
実施例と同じ条件で磁性層を形成した。
Then, for comparison, a magnetic layer was formed under the same conditions as in this example except that it was set at 0M-30°.

第2図に本実施例で作製した試料と比較例で作製した試
料について、長手方向にサンプリングをするとともに、
その幅方向の抗磁力分布をエラーバーの形で示した。
FIG. 2 shows sampling in the longitudinal direction of the sample fabricated in this example and the sample fabricated in the comparative example.
The coercive force distribution in the width direction is shown in the form of error bars.

これより明らかなように、本発明の方法によれ6・、−
′ ば、抗磁力が一定しており、その幅方向のばらつきも非
常に小さい。ところが、比較例によれば1抗磁力が大き
くなるとともに、その幅方向のばらつきも大きくなる。
As is clear from this, by the method of the present invention, 6.,-
' For example, the coercive force is constant, and its variation in the width direction is also very small. However, according to the comparative example, as the 1 coercive force increases, the variation in the width direction also increases.

以下の実施例についても同様の比較をしたが11000
m蒸着時点とスタート直後の抗磁力の対比で示す。
Similar comparisons were made for the following examples, but 11,000
It is shown by comparing the coercive force at the time of m deposition and immediately after the start.

〔実施例2〕 長さ2050m、幅500mm、厚さ15μmのポリエ
チレンテレフタレートフィルム上ニ、蒸気の入射角θ1
−73°で00100%からなる磁性層を0.2μmの
厚さに形成した。マスクの先端の角度はθM = 80
’で、王室の真空度は1 、7 X ’K)”rorr
であった。得られた抗磁力は初期、1000m。
[Example 2] On a polyethylene terephthalate film with a length of 2050 m, a width of 500 mm, and a thickness of 15 μm, the incident angle θ1 of vapor was
A magnetic layer consisting of 00100% at -73° was formed to a thickness of 0.2 μm. The angle of the tip of the mask is θM = 80
', and the degree of vacuum in the royal family is 1,7 x 'K)"rorr
Met. The obtained coercive force was initially 1000 m.

20oom時点でそれぞれ1200エルステツドであり
、B−H曲線の角形比はo、97で、幅方向の均一性も
変化しなかった。
At the time of 20 oom, each was 1200 oersted, the squareness ratio of the B-H curve was o, 97, and the uniformity in the width direction did not change.

一方、比較のため、0M−200で形成したところ、1
0oam時点では抗磁力は1220〜141oエルステ
ツドにばらついた。このとき、マスク先端に堆積したC
Oの厚みは19mmとなり、入射角が実質的に変化して
いた。
On the other hand, for comparison, when formed with 0M-200, 1
At the time of 0 oam, the coercive force varied from 1220 to 141 oersted. At this time, C deposited on the tip of the mask
The thickness of O was 19 mm, and the angle of incidence was substantially changed.

〔実施例3〕 幅6oomm、厚さ11.6μmのポリエチレンテレフ
タレートフイルムトに、入射角θ1=600でGo85
%−0r16%からなる磁性層を形成した。真空度を1
×10 TOrrとし、θ、 = 85゜0M−76°
の場合について比較検旧した。1000m時点と初期値
は抗磁力980エルステツド、B−H曲線の角形比0.
98で、幅方向の抗磁力分:/Ijはいずれも均一であ
った。
[Example 3] Go85 was applied to a polyethylene terephthalate film with a width of 6 oomm and a thickness of 11.6 μm at an incident angle θ1 = 600.
A magnetic layer consisting of %-0r16% was formed. Vacuum degree 1
×10 TOrr, θ, = 85゜0M-76゜
A comparative analysis was conducted for the following cases. The initial value at 1000m is coercive force 980 oersted, squareness ratio of B-H curve 0.
98, and the coercive force in the width direction: /Ij was uniform in all cases.

この二側についてさらに詳細に検旧したところ、200
0m、3000mと長尺化するにつれてθ、=86°の
場合に化べて01−76°の場合では若干抗磁力が変化
する傾向が見受けられた。このことからも、θl〈θ証
の関係を保持するのはもちろんのことであ乙が、θVを
できる限り大きくするのが好ましい。しかし、蒸発湯面
の低下により蒸発位置がずれると、入射角が変化しやす
いことから1 θ1−75〜860とするのが実際的で
ある。
A more detailed examination of these two sides revealed that 200
As the length increases from 0 m to 3000 m, the coercive force tends to change slightly in the case of θ = 86° and in the case of 01-76°. From this point of view, it is preferable not only to maintain the relationship θl<θ proof, but also to make θV as large as possible. However, if the evaporation position shifts due to a drop in the evaporation level, the angle of incidence tends to change, so it is practical to set it to 1 θ1-75 to 860.

し7かし、フィーダを配設して蒸発源に蒸発材料を補給
し、基板の長尺化に対応させることにより、蒸発源の湯
面位置を一定に保つようにすればこの限りではない。
However, this is not the case if a feeder is provided to replenish the evaporation material to the evaporation source to accommodate the lengthening of the substrate, thereby keeping the level of the molten metal at the evaporation source constant.

[実施例4〕 厚さ8.5μmのポリアミド基板上に、0080%−N
i20%からなる磁性層を0.16μmの厚さに形成し
た。王室には酸素を導入し、真空度4.6 X 10 
 Torrの真空度に保持して蒸着した。
[Example 4] 0080%-N was deposited on a polyamide substrate with a thickness of 8.5 μm.
A magnetic layer made of 20% i was formed to a thickness of 0.16 μm. Oxygen was introduced into the royal room, and the vacuum level was 4.6 x 10.
Vapor deposition was performed while maintaining a vacuum level of Torr.

なお、θ1=46°、θM=80°とした。Note that θ1=46° and θM=80°.

得られた磁性層の抗磁力は920で、B−H曲線の角形
化が0.88であった。そして、基板の4000m長に
わたって11vi′l力向、長手ノフ向ともその値は実
質的に均一であった。IJZ軟のため、θM=200と
した場合、1000771で抗磁力が約15%増加し、
2000mでは34%増#llLだ。ぞして、3QOO
mではA着膜厚を制御するのに、フィルム移動速度を4
0%蕎すか、投入する電rビームの電力を30%増加さ
せる必要が/−1−じた。これからも本発明は設定条件
を維持できるもので、膜1v制御性に優れていることが
わかる。
The coercive force of the obtained magnetic layer was 920, and the squareness of the B-H curve was 0.88. The values were substantially uniform in both the 11 vi'l force direction and the longitudinal nof direction over the 4000 m length of the substrate. Because IJZ is soft, when θM = 200, the coercive force increases by about 15% at 1000771,
At 2000m, it's a 34% increase #lll. Then, 3QOO
In order to control the A-deposited film thickness, the film movement speed was set to 4.
It was necessary to increase the power of the input electric beam by 30%. It can be seen from this that the present invention is able to maintain the set conditions and is excellent in controlling the film 1v.

これら実施例で使用した第1の装置以外にも基板として
のフィルムと蒸発源との間に高周波電極を配設し、 1
3.56 Ml(zの高周波でイオンブレーティングを
行なっても、本発明の効果が得られることをN認した。
In addition to the first device used in these Examples, a high frequency electrode was provided between the film as a substrate and the evaporation source, and 1
It was confirmed that the effects of the present invention can be obtained even when ion brating is performed at a high frequency of 3.56 Ml (z).

そして、蒸発桐利として、  F6゜Go −V 、 
Go−W 、 Go−Mn、Go−Ti、C1o−8i
And as evaporation Kiri, F6゜Go −V,
Go-W, Go-Mn, Go-Ti, C1o-8i
.

Go−N1−Or、Go−Pt等を使用しても、本発明
の効果が得られることを確認した。
It was confirmed that the effects of the present invention can be obtained even when Go-N1-Or, Go-Pt, etc. are used.

以上のように、本発明の方法は、マスクの、磁性層形成
の蒸気入射角度を規制する部分への蒸気入射角度を、基
板への蒸気入射角度よりも大きく設定しているので、長
尺の基板に連続して磁性材料を蒸着しても、磁性層の抗
磁力、B−H曲線の角形比を一定化することができ、そ
のため品質の安定した磁気記録再生用の蒸着テープを提
供することができる。
As described above, the method of the present invention sets the vapor incident angle to the part of the mask that regulates the vapor incident angle for magnetic layer formation to be larger than the vapor incident angle to the substrate. To provide a vapor-deposited tape for magnetic recording and reproducing, which can keep the coercive force of a magnetic layer and the squareness ratio of a B-H curve constant even when a magnetic material is continuously vapor-deposited on a substrate, and thus has stable quality. I can do it.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の方法を実施するだめの装置の一例を示
す断面図、第2図は本発明の方法により10 、 、・ 製造また磁気テープと止較例による特性ならびにそのば
らつきを肘用させて示す図である。 1・・・・高分子成形基板、3・・回転キャン、6・・
・・・・蒸発源、9・・・・・・仕切板、8・・・・・
良空槽、10・・・・・上室、11・・・・・・下室、
12.13  ・・・排気装置、14・・・・・マスク
Fig. 1 is a sectional view showing an example of an apparatus for carrying out the method of the present invention, and Fig. 2 is a cross-sectional view showing an example of a device for carrying out the method of the present invention. FIG. 1... Polymer molded substrate, 3... Rotating can, 6...
...Evaporation source, 9...Partition plate, 8...
Good air tank, 10...upper chamber, 11...lower chamber,
12.13...Exhaust system, 14...Mask.

Claims (1)

【特許請求の範囲】[Claims] 冷却支持体に沿って移動する高分子成形物基板に強磁性
材料を連続して蒸着する際、磁性層形成の蒸気入射角を
限定するマスクの、角度限定にかかわる部位近傍への蒸
気の入射角を、前記磁性層形成の入射角より大となすこ
とを特徴とする磁気記録媒体の製造方法。
When a ferromagnetic material is continuously deposited on a polymer molded substrate moving along a cooling support, the angle of incidence of the vapor near the part of the mask that limits the angle of vapor incidence for magnetic layer formation. A method for manufacturing a magnetic recording medium, characterized in that the angle of incidence is larger than the angle of incidence for forming the magnetic layer.
JP56199271A 1981-12-09 1981-12-09 Method for manufacturing magnetic recording media Granted JPS58100231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56199271A JPS58100231A (en) 1981-12-09 1981-12-09 Method for manufacturing magnetic recording media

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56199271A JPS58100231A (en) 1981-12-09 1981-12-09 Method for manufacturing magnetic recording media

Publications (2)

Publication Number Publication Date
JPS58100231A true JPS58100231A (en) 1983-06-14
JPH0334130B2 JPH0334130B2 (en) 1991-05-21

Family

ID=16405006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56199271A Granted JPS58100231A (en) 1981-12-09 1981-12-09 Method for manufacturing magnetic recording media

Country Status (1)

Country Link
JP (1) JPS58100231A (en)

Also Published As

Publication number Publication date
JPH0334130B2 (en) 1991-05-21

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