JPS58103151U - semiconductor equipment - Google Patents

semiconductor equipment

Info

Publication number
JPS58103151U
JPS58103151U JP19496681U JP19496681U JPS58103151U JP S58103151 U JPS58103151 U JP S58103151U JP 19496681 U JP19496681 U JP 19496681U JP 19496681 U JP19496681 U JP 19496681U JP S58103151 U JPS58103151 U JP S58103151U
Authority
JP
Japan
Prior art keywords
external lead
semiconductor equipment
semiconductor
narrow groove
length direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19496681U
Other languages
Japanese (ja)
Inventor
野崎 征彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19496681U priority Critical patent/JPS58103151U/en
Publication of JPS58103151U publication Critical patent/JPS58103151U/en
Pending legal-status Critical Current

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来例のUHF用の可変容量ダイオードの斜視
図、第2図は本考案の第1の実施例の装置の外部リード
の斜視図、第3図はその断面図、第4図は本考案の第2
の実施例の装置の外部リードの斜視図、第5図はその断
面図、第6図は本考案の第3の実施例の装置の外部リー
ドの断面図である。 図において、1・・・・・・樹脂封入部分、2.2′・
・−・・・外部リード(2はカソード、2′はアノード
)、10・・・・・・(本考案の実施例の装置の)外部
リード、11・・・・・・細孔、12・・・・・・リー
ドの先端面、13・・・・・・リードの封入面、14.
14’・・・・・・細溝。
Fig. 1 is a perspective view of a conventional UHF variable capacitance diode, Fig. 2 is a perspective view of an external lead of the device according to the first embodiment of the present invention, Fig. 3 is a cross-sectional view thereof, and Fig. 4 is a perspective view of a conventional variable capacitance diode for UHF. The second part of this invention
5 is a sectional view thereof, and FIG. 6 is a sectional view of an external lead of a device according to a third embodiment of the present invention. In the figure, 1...Resin sealed part, 2.2'...
... External lead (2 is a cathode, 2' is an anode), 10... External lead (of the device of the embodiment of the present invention), 11... Pore, 12. . . . Lead end surface, 13 . . . Lead enclosing surface, 14.
14'...Narrow groove.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体素子封入部より外部リードを導出した半導体装置
において、前記外部リードに細溝あるいは幅が前記外部
リードの厚さよりも小さい細孔を前記外部リードの長さ
方向に少くとも一個以上設けたことを特徴とする半導体
装置。
In a semiconductor device in which an external lead is led out from a semiconductor element enclosing part, the external lead is provided with at least one narrow groove or a pore whose width is smaller than the thickness of the external lead in the length direction of the external lead. Characteristic semiconductor devices.
JP19496681U 1981-12-29 1981-12-29 semiconductor equipment Pending JPS58103151U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19496681U JPS58103151U (en) 1981-12-29 1981-12-29 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19496681U JPS58103151U (en) 1981-12-29 1981-12-29 semiconductor equipment

Publications (1)

Publication Number Publication Date
JPS58103151U true JPS58103151U (en) 1983-07-13

Family

ID=30108261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19496681U Pending JPS58103151U (en) 1981-12-29 1981-12-29 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS58103151U (en)

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