JPS58122038A - 薄膜生成装置 - Google Patents

薄膜生成装置

Info

Publication number: JPS58122038A
Authority: JP; Japan
Prior art keywords: electrode; substrate; grid; film; particles
Prior art date: 1982-01-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP510882A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0124536B2 (2

Inventor

Yoshihiro Hamakawa

圭弘浜川

Yasunori Ando

靖典安東

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

SEISAN GIJUTSU SHINKO KYOKAI

Nissin Electric Co Ltd

Original Assignee

SEISAN GIJUTSU SHINKO KYOKAI

Nissin Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-01-16

Filing date

1982-01-16

Publication date

1983-07-20

1982-01-16 Application filed by SEISAN GIJUTSU SHINKO KYOKAI, Nissin Electric Co Ltd filed Critical SEISAN GIJUTSU SHINKO KYOKAI

1982-01-16 Priority to JP510882A priority Critical patent/JPS58122038A/ja

1983-07-20 Publication of JPS58122038A publication Critical patent/JPS58122038A/ja

1989-05-12 Publication of JPH0124536B2 publication Critical patent/JPH0124536B2/ja

Status Granted legal-status Critical Current

Links

239000010409 thin film Substances 0.000 title claims abstract description 7
239000010408 film Substances 0.000 claims abstract description 21
239000000758 substrate Substances 0.000 abstract description 23
239000002245 particle Substances 0.000 abstract description 14
230000005684 electric field Effects 0.000 description 7
239000004575 stone Substances 0.000 description 5
150000002500 ions Chemical class 0.000 description 3
239000012528 membrane Substances 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 2
230000000694 effects Effects 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
238000000151 deposition Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000000463 material Substances 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
230000001105 regulatory effect Effects 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
239000000126 substance Substances 0.000 description 1

Landscapes

Chemical Vapour Deposition (AREA)
Physical Or Chemical Processes And Apparatus (AREA)

JP510882A 1982-01-16 1982-01-16 薄膜生成装置 Granted JPS58122038A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP510882A JPS58122038A (ja)	1982-01-16	1982-01-16	薄膜生成装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP510882A JPS58122038A (ja)	1982-01-16	1982-01-16	薄膜生成装置

Publications (2)

Publication Number	Publication Date
JPS58122038A true JPS58122038A (ja)	1983-07-20
JPH0124536B2 JPH0124536B2 (2)	1989-05-12

Family

ID=11602157

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP510882A Granted JPS58122038A (ja)	1982-01-16	1982-01-16	薄膜生成装置

Country Status (1)

Country	Link
JP (1)	JPS58122038A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS60147114A (ja) *	1984-01-11	1985-08-03	Daihen Corp	光起電力素子の製造装置
JP2010121156A (ja) *	2008-11-18	2010-06-03	Fuji Electric Holdings Co Ltd	容量結合型プラズマｃｖｄ装置

1982
- 1982-01-16 JP JP510882A patent/JPS58122038A/ja active Granted

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS60147114A (ja) *	1984-01-11	1985-08-03	Daihen Corp	光起電力素子の製造装置
JP2010121156A (ja) *	2008-11-18	2010-06-03	Fuji Electric Holdings Co Ltd	容量結合型プラズマｃｖｄ装置

Also Published As

Publication number	Publication date
JPH0124536B2 (2)	1989-05-12

Similar Documents

Publication	Publication Date	Title
EP0200651B1 (fr)	1990-05-30	Source d'ions du type triode à une seule chambre d'ionisation à excitation haute fréquence et à confinement magnétique du type multipolaire
TW201230890A (en)	2012-07-16	Plasma processing apparatus and plasma control method
JPS636977B2 (2)	1988-02-15
JPS58122038A (ja)	1983-07-20	薄膜生成装置
TW494524B (en)	2002-07-11	Electrostatic attraction mechanism, surface processing method and surface processing device
CN205741199U (zh)	2016-11-30	一种预防靶中毒的等离子体增强磁控溅射设备
JPS5858147A (ja)	1983-04-06	プラズマ処理装置
JPS5916975A (ja)	1984-01-28	スパツタリング装置
JP2781165B2 (ja)	1998-07-30	スパッタリング装置
JPS63223171A (ja)	1988-09-16	高能率シ−トプラズマ型スパタリング装置
JP3577785B2 (ja)	2004-10-13	イオンビーム発生装置
JPS5678411A (en)	1981-06-27	Preparation of noncrystalline silicon film
JPS5585671A (en)	1980-06-27	Sputtering apparatus
JPS583635A (ja)	1983-01-10	プラズマ中化学気相成長装置
JPS58112045A (ja)	1983-07-04	薄膜形成方法
JP2005179767A (ja)	2005-07-07	スパタイオンプレ−テング装置
JPS60110871A (ja)	1985-06-17	薄膜形成装置
JPS6199670A (ja)	1986-05-17	イオンプレ−テイング装置
JPS5615838A (en)	1981-02-16	Gaseous phase growth device
JP2003213410A (ja)	2003-07-30	スパッタリング方法およびその装置
JPS6114652B2 (2)	1986-04-19
JPH0539569A (ja)	1993-02-19	対向ターゲツト式スパツタ装置及びスパツタ方法
JPH0273964A (ja)	1990-03-13	回転カソードを用いた薄膜形成装置
RU2109367C1 (ru)	1998-04-20	Способ получения отрицательных ионов в поверхностно-плазменных источниках
JPH09104975A (ja)	1997-04-22	スパッタ装置