JPS58152A - Semiconductor device - Google Patents

Abstract

PURPOSE:To perform programming, by cutting an Mo wiring provided near a pn junction through the selective heating and sublimating of the wiring by means of the low-power heat generation from the junction. CONSTITUTION:Layers of n, n<+> and p are formed on a p-type Si substrate, Al wiring of 3, 3' and 3'' are provided on an SiO2 film 2 by opening the films, and near the pn junction an Mo wiring 4 is provided by a method such as CVD. Heating the Mo wiring 4 in the presence of O2 or air using the heat generated by passing current in the reverse direction through the pn junction permits the Mo wiring to be sublimated and vanished, thereby completing the programming. As compared to a conventional method this constitution provides a finer PROM device with higher reliability plus lower power dissipation and also provides higher yield.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a semiconductor device with bit line or word wiring.
Using a metal material such as molybdenum or tungsten, selectively heating the molybdenum wiring with the heat generated in the kpn junction provided nearby and sublimating it, the wiring becomes a cut-shaped part. Related to programmable start-up memory without programming - Conventional bipolar programmable start-up memory (FROM) has been programmed using polycrystalline silicon (polysilicon) fuse method and junction breakdown method. (breakdown) method. In the former, programming (convolution) is performed by cutting the polysilicon wiring by applying high power to the polysilicon wiring, which is the bit line or the 6-ward line, and melting it. This has the disadvantage that it scatters and adheres to surrounding parts and wiring, not only causing short circuits but also impairing reliability. In the Gojaku method, a current of 1 is passed in the opposite direction to pm 9, thereby destroying the junction.The hook k is made of aluminum.
Although programming is better than evaporation and conductive cutting, the problem with this method is that it requires high power.

An object of the present invention is to solve the above-mentioned problems experienced in the prior art, and in order to achieve this purpose, molybdenum is used in the interconnection and placed near the interconnection at low power. pmoMw' is based on the combined yield force formula programmed by Riko, which selectively heats and sublimates molybdenum using the generated heat and cuts the molybdenum wiring.
FM service b.

Embodiments of the present invention will be described below with reference to the drawings.

The inventor of this string is Molybdenum #RIA Photo:
When heated above 500℃ in air, it reacts with oxygen.
Paying attention to the fact that oxide @ (Mo5s r Mo0a, etc.) suddenly sublimates within a short time and dissipates cleanly, the hint-mak is formed in the 2-11 molybdenum wiring, and a <KpQ junction is placed near it, Or in other words, using molybdenum in the related pn junction arrangement, pn
Programming is performed by oxidizing and sublimating the molybdenum in the pn junction YML by passing a current in the opposite direction and oxidizing and sublimating the junction.

One way to cut the molybdenum wiring is to sublimate it by self-heating by passing electricity through the molybdenum wiring itself, but in order to do so, the resistivity of molybdenum must be I
It is not practical unless it is about 10' Ωl or more, so thin molybdenum wiring (must be done...
There are only a limited number of molybdenum films that have four characteristics that meet these conditions.

In the conductor device of the present invention, even if the resistivity is set to 1×10-'' Ω value by heat treatment with molybdenum, it is possible to sublimate it with heat at 11 degrees. is possible, and even if a molybdenum wiring with a large film thickness is used, sufficient sublimation can be achieved.

One embodiment of the present invention is a molyfdenum-containing compound shown in cross section in Figure 1. Bipolar FROM used as t bit line or word line.
, the substrate IK is formed with diffusion regions denoted by 聁, n+ and p (・ru@3*3' and r are aluminum interconnects, while the beveled edge g portion near the pm junction is Sputtering, vapor deposition or chemical vapor deposition (
This is a molybdenum metal layer 4 formed by a CVD method. Here, when the molybdenum wiring N is exposed to a bulk atmosphere and a reverse current vm is applied to the pn junction in the factory air, the junction is heated, and the molybdenum wiring 4 sublimates and disappears due to the heat, and programming is performed. . In the embodiment of the invention, the molybdenum metal IN was placed in air.

Figure 2 PC is a MOS ILA which is another embodiment of the present invention.
M redundant bit memory is shown in cross section in (a);
(bl is marked with a plan view. In (al), 1
1 is p-type 'J') Koni/A&, 12 kl
5ift Ml, 13, 13", If is aluminum interconnection, 04th gate electrode, GND is ground wire, and n"
15 is a polysilicon layer, which is doped with n" type and p type as shown in FIG. Since such a redundant bit memory is prepared as a replacement when the original focus is electrically defective, it is required that the correction be made quickly and accurately.

In such a device, the polysilicon-15 junction is
When the joint is heated by flowing the L flow, the heat sublimates the molybdenum, and the aluminum alloy IIi! 1r is not energized and programming is performed. Such operations can be performed quickly, accurately and precisely, and therefore fully meet the requirements set forth above.

In the embodiment shown in Fig. 1 and Fig. 2, 4,140 molybdenum wirings were prepared for sublimation, and 7G was used for each sublimation.
+mv, 80 my of power was required.

In the two illustrated embodiments, after sublimation of molybdenum, a protective film is formed on the entire surface and the temperature is good. The protective film around the opening of the window melts and the window is blocked. Yot.

As explained above, the th! Place a molybdenum wiring near the pn junction in the ffi, and
) The programming of the F ROM device is performed by flowing the junction in the reverse direction mfL"i, heating the junction, thereby heating, oxidizing and sublimating the molybdenum wiring, and cutting the molybdenum wiring, so that the F ROM device is not manufactured.
The device is cleaner than the conventional ones, increasing the reliability of the device, and the power consumption is lower than the conventional ones, so the requirements for the current capacity of the peripheral circuit for programming/programming are reduced. This reduces write defects and improves yield in semiconductor device manufacturing.

It should be noted that although the above description of lightening has been made with reference to molybdenum, the scope of the present invention is not in addition thereto (it also extends to cases where other metals such as tungsten are used).

[Brief explanation of the drawing]

Figure 1 is a bipolar?i!OM which is an implementation notice of this invention.
FIG. 2 is a cross-sectional view of MO8, which is an implementation row of the present invention.
FIG. 2 is a cross-sectional view and a plan view of a redundant human memory. 1.11...pm silicon substrate, 2,12. IZ'・
-・810. Discipline, a, 3', r, ta, tr, It -
---ftb4=';ymuk#. 4.14...Molybdenum wiring! ...Polysilicon layer Figure 1 Figure 2

Claims (1)

Claims: In a memory device programmable by bit line or word line wiring cutting near the pll junction, the pn
The scissors wiring near the junction is made of a metal material such as molybdenum or tungsten, and the wiring is exposed to the atmosphere or air, and a reverse electric current is applied to the junction to heat the pm junction, and the heat is removed. The wiring is made into km,
A semiconductor device characterized by sublimation, cutting, and programming.