JPS58166726A - ウエ−ハエツチング装置 - Google Patents

ウエ−ハエツチング装置

Info

Publication number
JPS58166726A
JPS58166726A JP57050483A JP5048382A JPS58166726A JP S58166726 A JPS58166726 A JP S58166726A JP 57050483 A JP57050483 A JP 57050483A JP 5048382 A JP5048382 A JP 5048382A JP S58166726 A JPS58166726 A JP S58166726A
Authority
JP
Japan
Prior art keywords
wafer
etching
etched
flat plate
held
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57050483A
Other languages
English (en)
Japanese (ja)
Other versions
JPS644663B2 (2
Inventor
Yasuo Komatsuzaki
靖男 小松崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP57050483A priority Critical patent/JPS58166726A/ja
Priority to GB08301399A priority patent/GB2117324B/en
Priority to US06/460,355 priority patent/US4417945A/en
Priority to DE3306331A priority patent/DE3306331C2/de
Priority to FR8304942A priority patent/FR2524008B1/fr
Publication of JPS58166726A publication Critical patent/JPS58166726A/ja
Publication of JPS644663B2 publication Critical patent/JPS644663B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
JP57050483A 1982-03-29 1982-03-29 ウエ−ハエツチング装置 Granted JPS58166726A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57050483A JPS58166726A (ja) 1982-03-29 1982-03-29 ウエ−ハエツチング装置
GB08301399A GB2117324B (en) 1982-03-29 1983-01-19 An apparatus for chemical etching of wafer material
US06/460,355 US4417945A (en) 1982-03-29 1983-01-24 Apparatus for chemical etching of a wafer material
DE3306331A DE3306331C2 (de) 1982-03-29 1983-02-23 Verfahren und Vorrichtung zum Ätzen von Substrat-Material
FR8304942A FR2524008B1 (fr) 1982-03-29 1983-03-25 Appareil et procede pour le decapage chimique d'un article en forme de rondelle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57050483A JPS58166726A (ja) 1982-03-29 1982-03-29 ウエ−ハエツチング装置

Publications (2)

Publication Number Publication Date
JPS58166726A true JPS58166726A (ja) 1983-10-01
JPS644663B2 JPS644663B2 (2) 1989-01-26

Family

ID=12860155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57050483A Granted JPS58166726A (ja) 1982-03-29 1982-03-29 ウエ−ハエツチング装置

Country Status (5)

Country Link
US (1) US4417945A (2)
JP (1) JPS58166726A (2)
DE (1) DE3306331C2 (2)
FR (1) FR2524008B1 (2)
GB (1) GB2117324B (2)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945856A (en) * 1988-06-23 1990-08-07 Jeffrey Stewart Parylene deposition chamber
US5078091A (en) * 1988-06-23 1992-01-07 Jeffrey Stewart Parylene deposition chamber and method of use
US5167718A (en) * 1988-06-23 1992-12-01 Jeffrey Stewart Parylene deposition chamber and method of use
US5488833A (en) * 1994-09-26 1996-02-06 Stewart; Jeffrey Tangential flow cold trap
US5882725A (en) * 1997-07-01 1999-03-16 Para Tech Coating, Inc. Parylene deposition chamber including eccentric part tumbler
US6406544B1 (en) 1988-06-23 2002-06-18 Jeffrey Stewart Parylene deposition chamber and method of use
US6737224B2 (en) 2001-04-17 2004-05-18 Jeffrey Stewart Method of preparing thin supported films by vacuum deposition
JP2006051446A (ja) * 2004-08-12 2006-02-23 Techno Network Shikoku Co Ltd 光学材料の無歪み表面加工装置および表面加工技術

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0785471B2 (ja) * 1990-10-16 1995-09-13 信越半導体株式会社 エッチング装置
DE4103084A1 (de) * 1991-02-01 1992-08-13 Wacker Chemitronic Magazin zur halterung von scheibenfoermigen werkstuecken, insbesondere halbleiterscheiben, bei der nasschemischen oberflaechenbehandlung in fluessigkeitsbaedern
US5733175A (en) * 1994-04-25 1998-03-31 Leach; Michael A. Polishing a workpiece using equal velocity at all points overlapping a polisher
US5607341A (en) * 1994-08-08 1997-03-04 Leach; Michael A. Method and structure for polishing a wafer during manufacture of integrated circuits
US5954888A (en) * 1998-02-09 1999-09-21 Speedfam Corporation Post-CMP wet-HF cleaning station
DE19825381B4 (de) * 1998-05-28 2004-10-28 Institut für Halbleiterphysik Frankfurt (Oder) GmbH Verfahren zur Handhabung von Wafern großen Durchmessers während eines Temperprozesses
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
JP7221579B2 (ja) 2016-03-22 2023-02-14 富士電機株式会社 樹脂組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2328533A (en) * 1941-12-26 1943-08-31 Alncin Inc Glass article and method of manufacture thereof
US3437543A (en) * 1965-03-09 1969-04-08 Western Electric Co Apparatus for polishing
DE1521794A1 (de) * 1965-07-23 1969-10-23 Ibm Deutschland Vorrichtung zum chemischen Polieren von Halbleiterscheiben
US3549439A (en) * 1967-09-15 1970-12-22 North American Rockwell Chemical lapping method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945856A (en) * 1988-06-23 1990-08-07 Jeffrey Stewart Parylene deposition chamber
US5078091A (en) * 1988-06-23 1992-01-07 Jeffrey Stewart Parylene deposition chamber and method of use
US5167718A (en) * 1988-06-23 1992-12-01 Jeffrey Stewart Parylene deposition chamber and method of use
US6406544B1 (en) 1988-06-23 2002-06-18 Jeffrey Stewart Parylene deposition chamber and method of use
US5488833A (en) * 1994-09-26 1996-02-06 Stewart; Jeffrey Tangential flow cold trap
US5882725A (en) * 1997-07-01 1999-03-16 Para Tech Coating, Inc. Parylene deposition chamber including eccentric part tumbler
US6737224B2 (en) 2001-04-17 2004-05-18 Jeffrey Stewart Method of preparing thin supported films by vacuum deposition
JP2006051446A (ja) * 2004-08-12 2006-02-23 Techno Network Shikoku Co Ltd 光学材料の無歪み表面加工装置および表面加工技術

Also Published As

Publication number Publication date
GB2117324B (en) 1985-04-11
US4417945A (en) 1983-11-29
GB8301399D0 (en) 1983-02-23
JPS644663B2 (2) 1989-01-26
FR2524008A1 (fr) 1983-09-30
GB2117324A (en) 1983-10-12
FR2524008B1 (fr) 1987-06-12
DE3306331C2 (de) 1986-04-24
DE3306331A1 (de) 1983-10-06

Similar Documents

Publication Publication Date Title
JPS58166726A (ja) ウエ−ハエツチング装置
CN105580115B (zh) 装配有枢纽臂的化学机械抛光机
JP2008539594A (ja) 基板の縁部を洗浄するための方法および装置
CN210279987U (zh) 一种晶圆双面清洗装置
WO2000074115A1 (en) Wafer cascade scrubber
TWI544534B (zh) A substrate processing brush, a substrate processing device, and a substrate processing method
JPH11254309A (ja) ウェーハ加工装置および加工方法
CN113113346A (zh) 承载装置及半导体清洗设备
KR19980042416A (ko) 평면 피가공물의 폴리싱과 세정 방법 및 장치
CN110957208A (zh) 晶圆洗边方法及晶圆清洗装置
US6813796B2 (en) Apparatus and methods to clean copper contamination on wafer edge
KR101884640B1 (ko) 화학 기계적 연마 시스템
TW201921517A (zh) 基板處理裝置、基板處理方法及記錄媒體
CN215357894U (zh) 一种抛光时同步清洁抛光垫的带式抛光装置
CN216262401U (zh) 用于清洗晶圆的排列式兆声清洗装置
JP2002177911A (ja) 基板洗浄装置および基板洗浄方法
JP2998687B2 (ja) ブラシスクラブ装置
JP2000301089A (ja) 板状ワークの処理方法及び装置
JP2001001256A (ja) ワーク仕上げ研磨，洗浄及び乾燥の一体化処理装置
JP2001150336A (ja) 平板状基板の製造方法および研磨方法
JP2001198824A (ja) 研磨装置の洗浄方法及び研磨装置
EP1745888A1 (en) Linearly advancing polishing method and apparatus
JPH11297665A (ja) ウエハ端面処理装置
JPH03196965A (ja) 半導体ウェーハの研磨方法
JPH08148449A (ja) バキュームチャックの研削屑除去用の洗浄装置