JPS58197777A - 半導体不揮発性記憶装置 - Google Patents

半導体不揮発性記憶装置

Info

Publication number
JPS58197777A
JPS58197777A JP57082006A JP8200682A JPS58197777A JP S58197777 A JPS58197777 A JP S58197777A JP 57082006 A JP57082006 A JP 57082006A JP 8200682 A JP8200682 A JP 8200682A JP S58197777 A JPS58197777 A JP S58197777A
Authority
JP
Japan
Prior art keywords
memory
information
shielding film
ultraviolet irradiation
ultraviolet rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57082006A
Other languages
English (en)
Japanese (ja)
Other versions
JPS638627B2 (de
Inventor
Ryuichi Matsuo
龍一 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57082006A priority Critical patent/JPS58197777A/ja
Publication of JPS58197777A publication Critical patent/JPS58197777A/ja
Publication of JPS638627B2 publication Critical patent/JPS638627B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP57082006A 1982-05-12 1982-05-12 半導体不揮発性記憶装置 Granted JPS58197777A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57082006A JPS58197777A (ja) 1982-05-12 1982-05-12 半導体不揮発性記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57082006A JPS58197777A (ja) 1982-05-12 1982-05-12 半導体不揮発性記憶装置

Publications (2)

Publication Number Publication Date
JPS58197777A true JPS58197777A (ja) 1983-11-17
JPS638627B2 JPS638627B2 (de) 1988-02-23

Family

ID=13762434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57082006A Granted JPS58197777A (ja) 1982-05-12 1982-05-12 半導体不揮発性記憶装置

Country Status (1)

Country Link
JP (1) JPS58197777A (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS616868A (ja) * 1984-06-20 1986-01-13 Nec Corp Ｍｉｓ型電界効果半導体装置
US4758984A (en) * 1985-12-18 1988-07-19 Fujitsu Limited Semiconductor memory device including read only memory element for storing fixed information
US4942450A (en) * 1987-07-08 1990-07-17 Nec Corporation Semiconductor memory device having non-volatile memory transistors
US5070378A (en) * 1988-09-22 1991-12-03 Nec Corporation Eprom erasable by uv radiation having redundant circuit
US7311385B2 (en) 2003-11-12 2007-12-25 Lexmark International, Inc. Micro-fluid ejecting device having embedded memory device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS616868A (ja) * 1984-06-20 1986-01-13 Nec Corp Ｍｉｓ型電界効果半導体装置
US4758984A (en) * 1985-12-18 1988-07-19 Fujitsu Limited Semiconductor memory device including read only memory element for storing fixed information
US4942450A (en) * 1987-07-08 1990-07-17 Nec Corporation Semiconductor memory device having non-volatile memory transistors
US5070378A (en) * 1988-09-22 1991-12-03 Nec Corporation Eprom erasable by uv radiation having redundant circuit
US7311385B2 (en) 2003-11-12 2007-12-25 Lexmark International, Inc. Micro-fluid ejecting device having embedded memory device
US7673973B2 (en) 2003-11-12 2010-03-09 Lexmark Internatinoal, Inc. Micro-fluid ejecting device having embedded memory devices
US7954929B2 (en) 2003-11-12 2011-06-07 Lexmark International, Inc. Micro-fluid ejecting device having embedded memory in communication with an external controller

Also Published As

Publication number Publication date
JPS638627B2 (de) 1988-02-23

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