JPS5820536U - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5820536U
JPS5820536U JP1981116358U JP11635881U JPS5820536U JP S5820536 U JPS5820536 U JP S5820536U JP 1981116358 U JP1981116358 U JP 1981116358U JP 11635881 U JP11635881 U JP 11635881U JP S5820536 U JPS5820536 U JP S5820536U
Authority
JP
Japan
Prior art keywords
bonded
semiconductor equipment
alloy
holding plate
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1981116358U
Other languages
English (en)
Inventor
貞森　将昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1981116358U priority Critical patent/JPS5820536U/ja
Publication of JPS5820536U publication Critical patent/JPS5820536U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/681—Shapes or dispositions thereof comprising holes not having chips therein, e.g. for outgassing, underfilling or bond wire passage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07353—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H10W72/334—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads

Landscapes

  • Die Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図は従来の電力用半導体素子の要部断面図、第２図
Ａはこの考案の一実施例の要部断面図、第２図Ｂはこの
実施例に用いる基板保持板の斜視図、第３図はこの実施
例の完成品の断面図である。 図において、１はＳｉウェハー（半導体基板）、３はろ
う材、５は基板保持板、６は貫通孔である。 なお、図中同一符号は同一または相当部分を示す。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体基板と、金属からなり上記半導体基板を保持する
    基板保持板とをろう材を介して合金固着してなるものに
    おいて、上記基板保持板にその一方の主面から他方の主
    面に達己上記合金固着時に上記ろう材から発生するガス
    を放出させる置溝孔を設けたことを特徴とする半導体装
    置。
JP1981116358U 1981-08-03 1981-08-03 半導体装置 Pending JPS5820536U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1981116358U JPS5820536U (ja) 1981-08-03 1981-08-03 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1981116358U JPS5820536U (ja) 1981-08-03 1981-08-03 半導体装置

Publications (1)

Publication Number Publication Date
JPS5820536U true JPS5820536U (ja) 1983-02-08

Family

ID=29910583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1981116358U Pending JPS5820536U (ja) 1981-08-03 1981-08-03 半導体装置

Country Status (1)

Country Link
JP (1) JPS5820536U (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376461A (ja) * 1986-09-19 1988-04-06 Hitachi Ltd 半導体装置の製造方法
JPH0390855U (ja) * 1989-12-28 1991-09-17
JP2013179103A (ja) * 2012-02-28 2013-09-09 Nissan Motor Co Ltd 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376461A (ja) * 1986-09-19 1988-04-06 Hitachi Ltd 半導体装置の製造方法
JPH0390855U (ja) * 1989-12-28 1991-09-17
JP2013179103A (ja) * 2012-02-28 2013-09-09 Nissan Motor Co Ltd 半導体装置の製造方法

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