JPS58210613A - Quartz tube for heat treatment furnace - Google Patents

Quartz tube for heat treatment furnace

Info

Publication number
JPS58210613A
JPS58210613A JP57093115A JP9311582A JPS58210613A JP S58210613 A JPS58210613 A JP S58210613A JP 57093115 A JP57093115 A JP 57093115A JP 9311582 A JP9311582 A JP 9311582A JP S58210613 A JPS58210613 A JP S58210613A
Authority
JP
Japan
Prior art keywords
gas
tube
heat treatment
connector
quartz tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57093115A
Other languages
Japanese (ja)
Inventor
Tetsuya Takagaki
哲也 高垣
Hiroto Nagatomo
長友 宏人
Hisao Seki
関 久夫
Takashi Aoyanagi
隆 青柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57093115A priority Critical patent/JPS58210613A/en
Publication of JPS58210613A publication Critical patent/JPS58210613A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation

Abstract

PURPOSE:To permit positive sealing and to achieve energy saving with a gas inlet part of simplified structure by a construction wherein gas inlets for guiding various gases are provided on the end and peripheral walls of a connector tube connected to the end of a quartz tube. CONSTITUTION:A branch tube part 11 is integrally formed on the inlet end side of a heat treatment part 10 of a quartz tube, and a connector tube 13 is connected to the branch tube part 11. A H2 gas conduit 16 is coaxially inserted through the center of an end wall 15 of the connector tube 13 to introduce H2 gas into the heat treatment part 10 through the H2 gas conduit 16. On the other hand, O2 gas is introduced into the connector tube 13 radially from an O2 gas conduit connector 18 provided on a peripheral wall 17 of the connector tube 13 and then guided into the heat treatment part 10 through a doghnut-like O2 gas flow passage 19 within the branch tube part 11. Thereby, both H2 gas and O2 gas are mixed with each other in the heat treatment part 10 to offer combustion gas. Thus, since only the single H2 gas conduit 16 is inserted through the end wall 15 of the connector tube 13 which constitutes the end wall of the quartz tube, it becomes possible to simplify the end wall 15 in its structure, machining as well as sealing which is advantageous in energy saving.

Description

【発明の詳細な説明】 本発明は半導体製品の熱処理炉用石英管に関するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a quartz tube for use in a heat treatment furnace for semiconductor products.

従来、半導体製品の製造過程において半導体基板(ウェ
ハ)に拡散処理を施こ丁場台、熱処理炉(拡散炉)の中
にH2、O!の如@複数揮のガスを導入して炉内で混合
し、ウェハの表面にgXt生成ざぜている。
Conventionally, in the process of manufacturing semiconductor products, when semiconductor substrates (wafers) are subjected to diffusion treatment, H2, O! As shown in the figure, multiple gases are introduced and mixed in the furnace, and gXt is generated on the surface of the wafer.

ところが、従来の熱処理炉においては、第1図に示す如
く熱処理炉1の端部に設けられるガス導管2.3および
熱電対挿入用の管4が互いに別々に分離した構造となっ
ている。そのため、省エネルギーのために炉端會封止す
る場合に封止が困難で、加工も面倒である。1友、熱処
理炉として石英管を用いる場合にも、高温による変形を
防止するためには管を回転させることが望ましいが、前
記従来構造では管會回転させることができず、管の変形
を防止することができなくなってしまう。
However, in the conventional heat treatment furnace, as shown in FIG. 1, the gas conduit 2.3 and the thermocouple insertion tube 4 provided at the end of the heat treatment furnace 1 are separated from each other. Therefore, when sealing the hearth to save energy, sealing is difficult and processing is troublesome. 1. Even when using a quartz tube as a heat treatment furnace, it is desirable to rotate the tube in order to prevent deformation due to high temperatures, but with the conventional structure described above, it is not possible to rotate the tube, and this prevents deformation of the tube. I become unable to do so.

本発明の目的は、前記従来技術の問題点を解決し、ガス
導入部の構造が簡単で、確実な封止を行なえることにエ
フ鳴エネルギー會図ることのできる熱処理炉用石英′#
葡提供することにある。
An object of the present invention is to solve the problems of the prior art described above, to provide a quartz for heat treatment furnace which has a simple structure for the gas introduction part, can perform reliable sealing, and can utilize F-singing energy.
It's about providing grapes.

この目的を達成するため、本発明は、複数種のガスr4
人するためのガス導入口t、石英管の端部に逍結したコ
ネクタ管の端壁と周壁に設けたものである。
To achieve this objective, the present invention provides multiple types of gas r4
A gas inlet t for the purpose of connecting the quartz tube is provided on the end wall and peripheral wall of the connector tube connected to the end of the quartz tube.

以下、本発明を図面に示す実施例にしたがって祥細に説
明する。
Hereinafter, the present invention will be explained in detail according to embodiments shown in the drawings.

第2図は本発明による熱処理炉用石英管の一実施例を示
す斜視図、第3図はその要部の拡大断面図、第4図は枝
管部の横断面図である。
FIG. 2 is a perspective view showing one embodiment of a quartz tube for a heat treatment furnace according to the present invention, FIG. 3 is an enlarged sectional view of the main part thereof, and FIG. 4 is a cross-sectional view of a branch pipe portion.

本実施例において、熱処理炉用石英管は管本体である熱
処理部10とそのガス導入端側に形成された枝管m11
とからなる。熱処理部lOは、拡散処1!’に施こ式れ
る半導体ウニ・・(図示せず)の直径に見合った内径會
有している。枝管部11は熱処理部lO内への燃焼用ガ
スの導入部を構成するものである。
In this embodiment, the quartz tube for a heat treatment furnace includes a heat treatment section 10 which is a tube body, and a branch pipe m11 formed at the gas introduction end side of the tube body.
It consists of. The heat treatment section 1O is a diffusion treatment section 1! It has an inner diameter commensurate with the diameter of the semiconductor sea urchin (not shown) to be applied. The branch pipe section 11 constitutes an introduction section for combustion gas into the heat treatment section IO.

この枝管部11は細管状で、その人口端側はテーパ部1
2となっており、このテーパ部12にはコネクタ管13
のテーパs14が丁り合せにより挿入、連粕されている
This branch pipe portion 11 has a thin tube shape, and its artificial end side has a tapered portion 1.
2, and this tapered part 12 has a connector pipe 13.
The taper s14 is inserted and continuous by collating.

コネクタ管13は罰配枝営部11へのガス導入用コネク
タ管でめジ、テーパ部14の反対端には封止および放熱
防止用の端壁15が形成されている。
The connector pipe 13 is a connector pipe for introducing gas into the distribution section 11, and an end wall 15 for sealing and preventing heat radiation is formed at the opposite end of the tapered part 14.

この端壁15の中心部には、燃焼用の水素(H2)ガス
會供給するためのH,ガス導管16(長手方向ガス導管
)が挿通され、このH,ガス導管16の先端は石英管の
熱処理部10の中1で延び、後端は(9)示しないH!
ガス源に接続されている。
An H gas conduit 16 (longitudinal gas conduit) for supplying hydrogen (H2) gas for combustion is inserted through the center of the end wall 15, and the tip of this H gas conduit 16 is a quartz tube. It extends in the middle 1 of the heat treatment section 10, and the rear end is (9) H!
connected to a gas source.

一方、前記コネクタ管13の周壁17の一部には、燃焼
用のm8(Ox)ガスを供給するための0!ガス導管(
半径方向ガス専管)會連結する02ガス導管用コネクタ
18が取り付けられている。
On the other hand, a part of the peripheral wall 17 of the connector pipe 13 is used for supplying m8 (Ox) gas for combustion. Gas pipe (
An 02 gas conduit connector 18 is attached to connect the radial gas conduit.

このOlガス4を用コネクタ18はH,ガス導管16に
対して直角となるようコネクタ管13の半径方向に設け
られ、03ガス導管からの03ガスtコネクタ管13の
中から枝管部11の内周面とH2ガス導管16の外周面
との間のドーナツ状の03ガス流路19を通って石英管
の熱処E1部lOの中に供給し、Hlガス導管16から
のH11ガスと熱処理部IO内で混合し、燃焼させる。
The connector 18 for this Ol gas 4 is provided in the radial direction of the connector pipe 13 so as to be perpendicular to the H gas pipe 16, and is connected to the branch pipe portion 11 from the 03 gas t connector pipe 13 from the 03 gas pipe. It is supplied into the heat treatment E1 section 10 of the quartz tube through the doughnut-shaped 03 gas flow path 19 between the inner peripheral surface and the outer peripheral surface of the H2 gas conduit 16, and is heat treated with the H11 gas from the H1 gas conduit 16. Mix and combust in section IO.

本実施例においては、石英管の熱処理部lOの入口端側
に枝管部11が一体形成され、この枝管部11にコネク
タ管13會連結し、該コネクタ管13の端壁15の中心
部にH2ガス導管11−回軸的に挿通し、このH2ガス
導管16i通ってH2ガスr熱処理部lOの中に、導入
する一方、該コネンタ管13の周壁17に設けた0、ガ
ス導管用コネクタ18から該コネクタ管13の中に半径
方向に導入したO!ガスを枝管部1】のドーナツ状のO
Rガス流路19會通って熱処理部10の中に導入するの
で、H3ガスと02ガスは熱処理部10内で混合され、
燃焼ガスとして用いられる。
In this embodiment, a branch pipe part 11 is integrally formed on the inlet end side of the heat treatment section 10 of the quartz tube, a connector pipe 13 is connected to this branch pipe part 11, and the central part of the end wall 15 of the connector pipe 13 is connected to the branch pipe part 11. The H2 gas conduit 11 is inserted rotationally into the H2 gas conduit 11 and introduced into the H2 gas r heat treatment section 10 through the H2 gas conduit 16i. O! introduced radially into the connector tube 13 from 18! Connect the gas to the donut-shaped O of the branch pipe section 1
Since the R gas is introduced into the heat treatment section 10 through the R gas flow path 19, the H3 gas and the 02 gas are mixed within the heat treatment section 10.
Used as combustion gas.

したがって、本実施例の場合には、石英管の晦壁kll
l成するコネクタ管13の端壁15は1本のH2ガス導
管16が挿通されているだけであるので、端壁15の構
造および加工ならびに封止が簡単になシ、省エネルギー
に有利である。勿論、ガス導入IIl造自体か簡単にな
り、また石英管がガス導入部とは分離されているので、
石英管自体の構造も簡単である。しかも、本実施例では
、石英管を回転させることが可能であるので、熱による
石英管の変形を防止することができる。きらに、本実施
例によれば、ガス導入部の端壁後部に取り付けられる放
熱防止板の構造が簡単になるという利廃が得られる。
Therefore, in the case of this embodiment, the bottom wall of the quartz tube kll
Since only one H2 gas conduit 16 is inserted through the end wall 15 of the connector tube 13, the end wall 15 can be easily constructed, processed and sealed, which is advantageous for energy saving. Of course, the gas introduction structure itself is simpler, and since the quartz tube is separated from the gas introduction part,
The structure of the quartz tube itself is also simple. Moreover, in this embodiment, since the quartz tube can be rotated, deformation of the quartz tube due to heat can be prevented. Furthermore, according to this embodiment, the advantage and disadvantage that the structure of the heat radiation prevention plate attached to the rear part of the end wall of the gas introduction part is simplified can be obtained.

第5図は本発明による熱処理炉用石英管の他の1つの実
施例を示す斜視図、第6図はその要部の拡大断面図、第
7図は枝管部の横断面図である。
FIG. 5 is a perspective view showing another embodiment of the quartz tube for a heat treatment furnace according to the present invention, FIG. 6 is an enlarged sectional view of the main part thereof, and FIG. 7 is a cross-sectional view of a branch pipe portion.

本実m鉤では、B2ガス導′f16と平行かつ密着的に
熱電対挿入用の管20が設けられ、両管16と20は互
いに溶接等で一体的に固定されている。
In this real hook, a tube 20 for inserting a thermocouple is provided in parallel with and in close contact with the B2 gas conduit f16, and both tubes 16 and 20 are integrally fixed to each other by welding or the like.

この熱電対挿入用の管20はH,ガスとolガスの点火
位置の淵度検出用熱電対會挿入するためのもので、その
先y#AはH2ガス導管16よりも短かくなっている志
この管20が設けられたことにより、H1ガス導管16
は石英管と同軸ではなくなっており、たとえば枝管s1
1では第7図に示す如き横断面構造である。したがって
、02ガス導管用コネクタ18からコネクタ管13内に
供給される02ガスは枝管部11の内周と管16および
20の外周との間の02ガス流路19ai通って熱処理
部10の中に供給され、H!ガス導管16からのH8ガ
スと混合されて燃焼させられる。
This thermocouple insertion tube 20 is for inserting a thermocouple for detecting the depth of the ignition position of H, gas, and OL gas, and the end y#A is shorter than the H2 gas conduit 16. By providing the Shikono pipe 20, the H1 gas conduit 16
is no longer coaxial with the quartz tube, for example, the branch tube s1
1 has a cross-sectional structure as shown in FIG. Therefore, the 02 gas supplied from the 02 gas conduit connector 18 into the connector pipe 13 passes through the 02 gas flow path 19ai between the inner periphery of the branch pipe section 11 and the outer periphery of the pipes 16 and 20, and enters the heat treatment section 10. Supplied to H! It is mixed with H8 gas from gas conduit 16 and combusted.

以上説明したように、本発明によれば、石英管内へのガ
ス導入部の構造が簡単になり、その加工や封止が容易で
、省エネルギー7図ることができる。
As described above, according to the present invention, the structure of the gas introduction part into the quartz tube is simplified, its processing and sealing are easy, and energy can be saved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の石英管の部分正面図、 第2図は本発明による熱処理炉用石英管の一実施例の斜
視図、 第3図はその要部の拡大断面図、 第4園は枝管部の横断面図、 第5図は本発明の他の1つの実施例の斜視図、第6図は
その要部の拡大断面図、 第7図は枝を部の横断面図である。 10・・・熱処理部、11・・・枝管部、12・・・テ
ーパ部、13・・・コネクタ管、14・・・テーパ部、
15・・・端壁、16・・・H2ガス導管、17・・・
周壁、18・・・02 ガス導管用コネクタ、19.1
9a・・・02ガス流路、20・・・熱電対御入用の管
  。 代理人 弁理士 薄 1)利 辛 ゛)。 (7)     1.□19 59−
Fig. 1 is a partial front view of a conventional quartz tube, Fig. 2 is a perspective view of an embodiment of a quartz tube for heat treatment furnaces according to the present invention, Fig. 3 is an enlarged sectional view of its main parts, and Fig. 4 is a branch. FIG. 5 is a perspective view of another embodiment of the present invention, FIG. 6 is an enlarged sectional view of the main part thereof, and FIG. 7 is a cross-sectional view of the branch portion. DESCRIPTION OF SYMBOLS 10... Heat treatment part, 11... Branch pipe part, 12... Taper part, 13... Connector pipe, 14... Taper part,
15... End wall, 16... H2 gas conduit, 17...
Peripheral wall, 18...02 Gas pipe connector, 19.1
9a...02 gas flow path, 20...tube for thermocouple. Agent Patent Attorney Bo 1) Li Xin ゛). (7) 1. □19 59-

Claims (1)

【特許請求の範囲】 1、石英管内に複数種のガスを導入し、熱処理部内の半
導体基板上に膜を生成させる熱処理炉用石英管において
、石英管の端部にコネクタ管全連結し、このコネクタ管
の端壁と周壁にガス導入ロケ形成したものであって、石
英管の端部が枝管およびこの枝管に連結されるコネクタ
管で形成され、コネクタ管の端壁のほぼ中心に長手方向
ガス導管を挿通すると共に、このガス導管に対して直角
方向における前記コネクタ管に第2のガス導管を設けた
ことt特徴とする熱処理炉用石英管。 2、長手方向ガス導管が熱電対挿入用の管と平行かつ一
体的に形成されていることを特徴とする特許請求の範囲
第1項記載の熱処理炉用石英管。
[Claims] 1. In a quartz tube for a heat treatment furnace in which multiple types of gases are introduced into the quartz tube to form a film on a semiconductor substrate in a heat treatment section, a connector tube is fully connected to the end of the quartz tube, and this The gas introduction location is formed on the end wall and surrounding wall of the connector pipe, and the end of the quartz tube is formed by a branch pipe and a connector pipe connected to this branch pipe, and a longitudinal line is formed approximately at the center of the end wall of the connector pipe. A quartz tube for a heat treatment furnace, characterized in that a directional gas conduit is inserted therethrough and a second gas conduit is provided in the connector tube in a direction perpendicular to the gas conduit. 2. The quartz tube for a heat treatment furnace according to claim 1, wherein the longitudinal gas conduit is formed parallel to and integrally with the thermocouple insertion tube.
JP57093115A 1982-06-02 1982-06-02 Quartz tube for heat treatment furnace Pending JPS58210613A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57093115A JPS58210613A (en) 1982-06-02 1982-06-02 Quartz tube for heat treatment furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57093115A JPS58210613A (en) 1982-06-02 1982-06-02 Quartz tube for heat treatment furnace

Publications (1)

Publication Number Publication Date
JPS58210613A true JPS58210613A (en) 1983-12-07

Family

ID=14073516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57093115A Pending JPS58210613A (en) 1982-06-02 1982-06-02 Quartz tube for heat treatment furnace

Country Status (1)

Country Link
JP (1) JPS58210613A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01252809A (en) * 1987-09-01 1989-10-09 Tel Sagami Ltd Oxidizing device
JPH0228928A (en) * 1988-07-19 1990-01-31 Matsushita Electron Corp Apparatus for manufacturing semiconductor device
JPH04299828A (en) * 1991-03-28 1992-10-23 Shin Etsu Handotai Co Ltd Semiconductor substrate treatment device
CN112283481A (en) * 2020-10-23 2021-01-29 北京凯德石英股份有限公司 Quartz tube structure and processing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52141568A (en) * 1977-05-13 1977-11-25 Hitachi Ltd Oxidizing semiconductor
JPS5747027B2 (en) * 1979-07-26 1982-10-06

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52141568A (en) * 1977-05-13 1977-11-25 Hitachi Ltd Oxidizing semiconductor
JPS5747027B2 (en) * 1979-07-26 1982-10-06

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01252809A (en) * 1987-09-01 1989-10-09 Tel Sagami Ltd Oxidizing device
JPH0228928A (en) * 1988-07-19 1990-01-31 Matsushita Electron Corp Apparatus for manufacturing semiconductor device
JPH04299828A (en) * 1991-03-28 1992-10-23 Shin Etsu Handotai Co Ltd Semiconductor substrate treatment device
CN112283481A (en) * 2020-10-23 2021-01-29 北京凯德石英股份有限公司 Quartz tube structure and processing method thereof

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