JPS58215056A - 半導体素子およびその形成方法 - Google Patents

半導体素子およびその形成方法

Info

Publication number
JPS58215056A
JPS58215056A JP57097670A JP9767082A JPS58215056A JP S58215056 A JPS58215056 A JP S58215056A JP 57097670 A JP57097670 A JP 57097670A JP 9767082 A JP9767082 A JP 9767082A JP S58215056 A JPS58215056 A JP S58215056A
Authority
JP
Japan
Prior art keywords
layer
wiring layer
alloyed
main surface
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57097670A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0320898B2 (cs
Inventor
Hideaki Nakagome
英明 中込
Kohei Yamada
耕平 山田
Hajime Terakado
寺門　肇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57097670A priority Critical patent/JPS58215056A/ja
Publication of JPS58215056A publication Critical patent/JPS58215056A/ja
Publication of JPH0320898B2 publication Critical patent/JPH0320898B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57097670A 1982-06-09 1982-06-09 半導体素子およびその形成方法 Granted JPS58215056A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57097670A JPS58215056A (ja) 1982-06-09 1982-06-09 半導体素子およびその形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57097670A JPS58215056A (ja) 1982-06-09 1982-06-09 半導体素子およびその形成方法

Publications (2)

Publication Number Publication Date
JPS58215056A true JPS58215056A (ja) 1983-12-14
JPH0320898B2 JPH0320898B2 (cs) 1991-03-20

Family

ID=14198460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57097670A Granted JPS58215056A (ja) 1982-06-09 1982-06-09 半導体素子およびその形成方法

Country Status (1)

Country Link
JP (1) JPS58215056A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012248795A (ja) * 2011-05-31 2012-12-13 Toshiba Corp 半導体発光素子およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4740148A (cs) * 1968-11-04 1972-10-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4740148A (cs) * 1968-11-04 1972-10-11

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012248795A (ja) * 2011-05-31 2012-12-13 Toshiba Corp 半導体発光素子およびその製造方法
US9147798B2 (en) 2011-05-31 2015-09-29 Kabushiki Kaisha Toshiba Semiconductor light emitting element and method for manufacturing same

Also Published As

Publication number Publication date
JPH0320898B2 (cs) 1991-03-20

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