JPS5832436A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS5832436A JPS5832436A JP56130550A JP13055081A JPS5832436A JP S5832436 A JPS5832436 A JP S5832436A JP 56130550 A JP56130550 A JP 56130550A JP 13055081 A JP13055081 A JP 13055081A JP S5832436 A JPS5832436 A JP S5832436A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- pedestal
- standoffs
- conductor
- standoff
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
Landscapes
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は1台座上面に半導体ペレットを載置し。[Detailed description of the invention] In the present invention, semiconductor pellets are placed on the top surface of one pedestal.
このペレットの電極と、このペレットに並んで設けた絶
縁中継台との間が接続導体によ多接続された型式の半導
体素子に関する。The present invention relates to a type of semiconductor element in which the electrodes of this pellet and an insulated relay stand provided side by side with this pellet are connected by multiple connection conductors.
このような半導体素子では、高−周波数で用−る場合の
ケース容量を小さくするために絶縁中継台(スタンドオ
フという)が用いられている。In such semiconductor devices, insulating relay stands (referred to as standoffs) are used to reduce case capacitance when used at high frequencies.
第1図にスタンドオフを用いた従来の半導体素子を示す
、第1図において、コバールまたは銅製の台座lの上面
はぼ中央に半導体ペレット2が載置され、ペレット20
両側の台座上に石英製の絶縁中継台3,3が設けられス
タンドオフ3.3の上面メタライズにテープ状の接続導
体4がiし渡され、接続導体4の中央部は垂れ下って半
導体ペレット2の上部電極金属5に接続されている。FIG. 1 shows a conventional semiconductor device using standoffs. In FIG. 1, a semiconductor pellet 2 is placed approximately in the center of the upper surface of a pedestal L made of Kovar or copper.
Quartz insulating relay stands 3, 3 are provided on the pedestals on both sides, and a tape-shaped connecting conductor 4 is passed over the metallized upper surface of the standoff 3.3, and the central part of the connecting conductor 4 hangs down to form a semiconductor pellet. It is connected to the upper electrode metal 5 of No. 2.
第2図(a)ないしくC)は第1図に示す半導体素子の
使用状態を示す断面図であり、このような半導体素子を
使用する場合、第2図(a)に示すように、半導体素子
のスタンドオフ3の上面に電気的接触をとるためのホー
ルド板1(1重ねて荷重をかける。2(a) to 2(C) are cross-sectional views showing how the semiconductor device shown in FIG. 1 is used. When using such a semiconductor device, as shown in FIG. 2(a), A hold plate 1 (one stacked and loaded) is used to make electrical contact with the top surface of the standoff 3 of the element.
すると%第2図(b)に示すように電極金属5がはがれ
て動作不良になり九9.同図(C)に示すようKl続導
体4が切れたりまたは切れないまでも変形して特性が変
化すると−う欠点がありた。Then, as shown in Figure 2(b), the electrode metal 5 peels off and malfunctions, resulting in 99. As shown in FIG. 4(C), there is a drawback that the Kl connecting conductor 4 may be broken or deformed even if it is not broken, resulting in a change in characteristics.
本発明の目的は、このようなホールド板圧着により起る
電極金属のはがれまたは断線などが防止された半導体素
子を提供することにある。An object of the present invention is to provide a semiconductor element in which peeling off of electrode metal or disconnection caused by such press-bonding of the holding plate is prevented.
本発明の半導体素子は台座とこの台座上面に載置された
半導体ペレットと、このペレットと並んで前記台座に設
けられた絶縁中継台と、この中継台上面のメタライズ面
と前記ペレットの電極との間に接続された接続導体とを
具え、かつ前記絶縁中継台の前記接続導体の接続部は凹
まされている構成を有する。The semiconductor element of the present invention includes a pedestal, a semiconductor pellet placed on the top surface of the pedestal, an insulating relay stand provided on the pedestal alongside the pellet, and a metallized surface on the top surface of the relay stand and an electrode of the pellet. and a connecting conductor connected between them, and a connecting portion of the connecting conductor of the insulated relay stand is recessed.
つぎに本発明を実施例により説明する。Next, the present invention will be explained by examples.
第3図は本発明の一実施例の斜視図である。第3図にお
いては、従来例の第1図に比べ変わったところは、接続
導体4がスタンドオフ13上面の一段凹んだ凹み面13
aのメタライズ面で接続されていることである。このよ
うに、接続導体4は凹んだところで接続されていれば、
この半導体素子使用の際にスタンドオフ13の上面に圧
着されるホルト板は接続導体4に対し何らの影響を与え
ることもないので、接続導体の断線、接続電極金属のは
がれなど起らなくなり、信頼性の高い半導体素子が得ら
れる。FIG. 3 is a perspective view of one embodiment of the present invention. In FIG. 3, the difference from the conventional example shown in FIG.
They are connected at the metallized surface of a. In this way, if the connecting conductor 4 is connected at the recessed part,
The Holt plate that is crimped onto the top surface of the standoff 13 when using this semiconductor element does not have any effect on the connecting conductor 4, so there is no disconnection of the connecting conductor, peeling of the connecting electrode metal, etc., and reliability is improved. A semiconductor element with high properties can be obtained.
第4図は本発明の他の実施例の斜視図である。FIG. 4 is a perspective view of another embodiment of the invention.
本例では、第3図の例に比べ、スタンドオフ23は簡j
lVC1個だけ用いたものの例で、接続導体14の接続
部は長さ方向で階段状に一段下9た凹み面23aである
。第5図は第4図とほぼ同じ、唯一個のスタンドオフ3
3を用いており、その接続導体14の接続部は横幅方向
で階段状に一段下った凹み面33aである。In this example, the standoff 23 is simpler than the example shown in FIG.
In this example, only one IVC is used, and the connecting portion of the connecting conductor 14 is a concave surface 23a that is stepped down one step in the longitudinal direction. Figure 5 is almost the same as Figure 4, with only one standoff 3.
3 is used, and the connecting portion of the connecting conductor 14 is a concave surface 33a that is stepped down one step in the width direction.
第6図は本発明のさらに他の実施例である。スタンドオ
フ43は半導体ペレット2を囲む半円状の偵壁を形成し
、この半円状の両端部で階段状に一段凹んだ凹み百43
aで接続導体4と接続を行りている。本例は第3図に示
すペレットの両aに別個に設けた2個のスタンドオフの
ように左右両方向vc[続導体を引き出しているが、ス
タンドオフ1個で取付間第であり、かつ2本の接続導体
による同様の特性が得られる。FIG. 6 shows yet another embodiment of the present invention. The standoff 43 forms a semicircular wall surrounding the semiconductor pellet 2, and a step-like recess 43 is formed at both ends of the semicircular shape.
A connection is made to the connecting conductor 4 at point a. In this example, as shown in Fig. 3, two separate standoffs are provided on both sides of the pellet, and the connecting conductor is drawn out in both the left and right directions, but one standoff is the first between the attachments, and two Similar characteristics can be obtained with book connecting conductors.
第1図は従来の半導体素子の斜視図、@2図(a)(b
)、(C)はそれぞれ第1図の半導体素子の使用状態を
説明するための断面図、@3図は本発明の一実施例の斜
視図、第4図および第5図はそれぞれ本発明の他の実施
例の斜視図、@6図は本発明のさらに他の実施例の斜視
図である。
l・・・・・・台座、2・・・・・・半導体ベンツ)、
3,13゜23 、33・・・・・・絶縁中継台(スタ
ンドオフ)、4.14・・・・・・接続導体、5・・・
・・・電極金属、10・・・・・・ホルト板。
13a、23a、33a・・・・・・凹み面。
5−
冷 1 図
(llン (b〕
(C)峯 2 函
≠3 珂Figure 1 is a perspective view of a conventional semiconductor device, @Figure 2 (a) (b)
) and (C) are respectively cross-sectional views for explaining the usage state of the semiconductor element shown in FIG. 1, @3 is a perspective view of an embodiment of the present invention, and FIGS. Perspective view of another embodiment, Figure @6 is a perspective view of still another embodiment of the present invention. l...Pedestal, 2...Semiconductor Benz),
3,13゜23, 33... Insulated relay stand (standoff), 4.14... Connection conductor, 5...
... Electrode metal, 10 ... Holt plate. 13a, 23a, 33a...concave surfaces. 5- Cold 1 Figure (lln (b)
(C) Mine 2 boxes ≠ 3 boxes
Claims (1)
このペレットと並んで前記台座に設けられた絶縁中継台
と、この中継台上面のメタライズ面と前記ペレットの電
極との間に接続された接続導体とを具えた半導体素子に
おいて、前記絶縁中継台の前記接続導体の接続部が凹ま
されていることを特徴とする半導体素子。A pedestal, a semiconductor pellet placed on the top surface of the pedestal,
In a semiconductor device comprising an insulated relay stand provided on the pedestal alongside the pellet, and a connection conductor connected between a metallized surface on the top surface of the relay stand and an electrode of the pellet, the insulated relay stand is A semiconductor device characterized in that a connecting portion of the connecting conductor is recessed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56130550A JPS5832436A (en) | 1981-08-20 | 1981-08-20 | Semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56130550A JPS5832436A (en) | 1981-08-20 | 1981-08-20 | Semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5832436A true JPS5832436A (en) | 1983-02-25 |
Family
ID=15036952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56130550A Pending JPS5832436A (en) | 1981-08-20 | 1981-08-20 | Semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5832436A (en) |
-
1981
- 1981-08-20 JP JP56130550A patent/JPS5832436A/en active Pending
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