JPS583302Y2 - N gate thyristor - Google Patents

Description

[Detailed Description of the Invention] The present invention relates to the structure of an N-gate thyristor.

Conventionally, a structure as shown in FIG. 1 has been used for this type of N-gate system.

In the figure, there are relatively acute angle portions at the upper right and lower left portions of the anode section 1, and current concentration tends to occur in these portions, which has the drawback of sometimes leading to destruction of the device.

In addition, when assembling this device in FIG. 1, electrodes are attached to relatively wide areas at the bottom right of the anode section 1 and the cathode section 2 using gold wires, aluminum wires, etc.; 1 and the cathode part 2 are not in the shape of a circle or square, but have a modified shape, so when attaching a gold wire, etc., the actual effective area is smaller than it appears. The drawback was that it was difficult.

The present invention was made in order to eliminate the above-mentioned drawbacks inherent in the conventional technology, and therefore, the purpose of the present invention is to eliminate the corners of the anode section 1 shown in FIG. 1 where current concentration is likely to occur, and to It is an object of the present invention to provide a new N-gate thyristor having a structure in which the effective area for attaching gold wires, etc. of an anode part and a cathode part can be reduced without changing the size of the whole element.

That is, according to the present invention, the anode part is made circular or nearly circular, the distance between the anode and the cathode is made long, and the cathode part is rounded to increase the effective area of the part where the electrode wire is attached. An N-gate cyrisk is given.

Next, the present invention will be explained with drawings (Fig. 2a) showing a good embodiment thereof.
+b, and will be explained in detail with reference to FIGS. 3a and 3b).

An embodiment of the present invention is shown in FIG.

One of the drawbacks of the conventional structure (Fig. 1) was that current concentration occurred in the upper right and lower left corners of the anode section 1, and the resistance to overcurrent damage was weak. In one embodiment of the present invention, as shown in FIG.
The anode portion 3 is made circular and has no corners, thereby improving resistance to overcurrent breakdown.

Further, the anode part 3 does not need to be completely circular;
Although a circular shape with enough curvature to prevent current concentration may be used, a circular shape is preferable from the viewpoint of the assembly advantages described below.

Note that reference number 4 indicates a cathode section. Regarding overcurrent breakdown, it is of course not sufficient to simply make the anode part 3 circular, but there is also a correlation with the area of the anode part 3 and the distance between the anode part 1 and the cathode part 2 in FIG.

The larger the area of the anode, the better.
It is a matter of opinion that the longer the distance between the cathodes, the better.

Therefore, the easiest way is to increase the size of the entire element, but the larger the element, the lower the utilization rate of one element and the higher the cost.

In the embodiment of FIGS. 2a and 2b, the anode section 3 is
The area is set 3↑ to have the same area as the anode part 1 of the main body.

Furthermore, by adopting the structure shown in FIG. 2, the distance between the anode and cathode can be reasonably long while maintaining the same size as the device shown in FIG.

As described above, by making the anode part 3 circular and eliminating corners, and by increasing the distance between the anode and cathode, it is possible to obtain the effect of significantly improving the overcurrent withstand capacity and reducing surface leakage. can get.

In addition, by making the anode part 3 circular and making the area at the lower right corner of the cathode part 4 where the electrode wire (gold wire, aluminum wire, etc.) is attached curved to make the area smaller, it is easier to attach the electrode during assembly. This has the effect of making it easier.

Referring now to Figures 3a and 3b, there is shown a second embodiment of the present invention.

Figure 3a. The embodiment shown in FIG.
, b, but has a structure in which an N+ layer 5 is provided between the anode and the cathode.

This second embodiment not only provides the effects of the first embodiment, but also takes advantage of the fact that the distance between the anode and cathode can be long and provides a layer of N''5 between the anode and cathode. This has the effect that the leakage current at the surface when a voltage is applied can be further reduced than when the N+ layer 5 is not included.

As described above, if the structure based on this invention is adopted, it is possible to manufacture a device with the same electrical characteristics as the conventional device without changing the overall size of the device, and it also facilitates assembly and reduces assembly steps. It is possible to improve retention and quality.

In addition, the resistance to overcurrent is improved, and the surface I
J + - can be suppressed.

[Brief explanation of the drawing]

Figure 1 shows the structure of a conventional N-gate Cyrisk.
Figure 2a is a structural diagram showing one embodiment of the present invention, Figure 2 is a sectional view taken along line A-A in Figure 2a, and Figure 3a is another embodiment of the present invention. 1) is a structural diagram showing the 3rd (X
It is a sectional view along the HR' line of r. 1.3... Anode part, 2, 4------
Cathode part, 5...N+ layer part, 6...
N-type silicon substrate (gate part), 7...5I0
2.8...P layer.

Claims (1)

[Scope of utility model registration request] In the N-gate silice, an anode portion having a circular or nearly circular planar shape is provided near the center of one main surface of the element,
A cathode section is provided which is spaced apart from the anode section by a certain distance and has a partially cut concentric planar shape, and the cathode section is partially formed wide. N-gate silisk is characterized by a rounded outer circumference.