JPS5855649Y2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5855649Y2
JPS5855649Y2 JP1978167200U JP16720078U JPS5855649Y2 JP S5855649 Y2 JPS5855649 Y2 JP S5855649Y2 JP 1978167200 U JP1978167200 U JP 1978167200U JP 16720078 U JP16720078 U JP 16720078U JP S5855649 Y2 JPS5855649 Y2 JP S5855649Y2
Authority
JP
Japan
Prior art keywords
auxiliary electrode
cylindrical insulator
gate
terminal
conductive wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1978167200U
Other languages
English (en)
Japanese (ja)
Other versions
JPS5584961U (2
Inventor
光雄 大館
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1978167200U priority Critical patent/JPS5855649Y2/ja
Publication of JPS5584961U publication Critical patent/JPS5584961U/ja
Application granted granted Critical
Publication of JPS5855649Y2 publication Critical patent/JPS5855649Y2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Landscapes

  • Thyristors (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
JP1978167200U 1978-12-04 1978-12-04 半導体装置 Expired JPS5855649Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1978167200U JPS5855649Y2 (ja) 1978-12-04 1978-12-04 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1978167200U JPS5855649Y2 (ja) 1978-12-04 1978-12-04 半導体装置

Publications (2)

Publication Number Publication Date
JPS5584961U JPS5584961U (2) 1980-06-11
JPS5855649Y2 true JPS5855649Y2 (ja) 1983-12-20

Family

ID=29167190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1978167200U Expired JPS5855649Y2 (ja) 1978-12-04 1978-12-04 半導体装置

Country Status (1)

Country Link
JP (1) JPS5855649Y2 (2)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50115773A (2) * 1974-02-07 1975-09-10

Also Published As

Publication number Publication date
JPS5584961U (2) 1980-06-11

Similar Documents

Publication Publication Date Title
JP3291977B2 (ja) 圧接型半導体素子及びその製造方法並びに圧接型半導体装置
US4996586A (en) Crimp-type semiconductor device having non-alloy structure
US4107727A (en) Resin sealed semiconductor device
US3252060A (en) Variable compression contacted semiconductor devices
JPH0760893B2 (ja) 半導体装置およびその製造方法
US3296506A (en) Housed semiconductor device structure with spring biased control lead
US2174682A (en) Tube base and socket
US3476986A (en) Pressure contact semiconductor devices
JPS5855649Y2 (ja) 半導体装置
JPS5855648Y2 (ja) 半導体装置
US3452254A (en) Pressure assembled semiconductor device using massive flexibly mounted terminals
US4068368A (en) Closure for semiconductor device and method of construction
US3027502A (en) Semiconductor device
US3068382A (en) Hermetically sealed semiconductor devices
US3184658A (en) Semiconductor device and header combination
US3353073A (en) Magnesium-aluminum alloy contacts for semiconductor devices
JPS5824452Y2 (ja) 半導体装置
JPH03187235A (ja) 半導体装置およびそのための電極ブロック
US3196325A (en) Electrode connection to mesa type semiconductor device
JPS5943736Y2 (ja) 半導体装置
US3299327A (en) Housing for a three terminal semiconductor device having two insulation tube sections
US3310717A (en) Encapsulated semiconductor device with minimized coupling capacitance
US3299309A (en) Annular cathode electrode support
US4143395A (en) Stud-type semiconductor device
JPS5855650Y2 (ja) 半導体装置