JPS5856435U - Semiconductor wafer heat treatment equipment - Google Patents
Semiconductor wafer heat treatment equipmentInfo
- Publication number
- JPS5856435U JPS5856435U JP15005981U JP15005981U JPS5856435U JP S5856435 U JPS5856435 U JP S5856435U JP 15005981 U JP15005981 U JP 15005981U JP 15005981 U JP15005981 U JP 15005981U JP S5856435 U JPS5856435 U JP S5856435U
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- treatment equipment
- semiconductor wafer
- wafer heat
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は酸素・水素バーニングにより半導体ウェハのウ
ェット酸化処理を行う熱処理装置を示す断面図、第２図
は熱処理装置のノズルの摩耗具合を説明するための断面
図、第３図はこの考案による半導体ウェハの熱処理装置
の実施例を説明するための図で、ノズルを取出して示す
一面図、第４図はＢＴテストによるＣ−■特性の一例を
示す図である。
２１・・・・・・ノズル、２２・・・・・・先端蔀分。Figure 1 is a cross-sectional view showing a heat treatment equipment that performs wet oxidation treatment on semiconductor wafers by oxygen/hydrogen burning, Figure 2 is a cross-sectional view to explain the degree of wear on the nozzle of the heat treatment equipment, and Figure 3 is based on this invention. FIG. 4 is a diagram for explaining an embodiment of a semiconductor wafer heat treatment apparatus, and is a front view showing a nozzle taken out. FIG. 4 is a diagram showing an example of C-■ characteristics by a BT test. 21... Nozzle, 22... Tip tip.
Claims (1)
体ウェハのウェット酸化処理を行う熱処理装置において
、酸素・水素燃焼部のノズルを、金属元素あ含有量が２
、Ｏｐｐｍ以下の超高純度石英で、 形成したこと
を特徴とする半導体ウエノ）の熱処理装置。In a heat treatment equipment that performs wet oxidation treatment of semiconductor wafers by generating H2O through oxygen/hydrogen burning, the nozzle of the oxygen/hydrogen combustion section is
, a heat treatment apparatus for semiconductor wafers, characterized in that they are made of ultra-high purity quartz having a purity of less than 100 ppm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15005981U JPS5856435U (en) | 1981-10-12 | 1981-10-12 | Semiconductor wafer heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15005981U JPS5856435U (en) | 1981-10-12 | 1981-10-12 | Semiconductor wafer heat treatment equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5856435U true JPS5856435U (en) | 1983-04-16 |
Family
ID=29942805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15005981U Pending JPS5856435U (en) | 1981-10-12 | 1981-10-12 | Semiconductor wafer heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856435U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5590405A (en) * | 1978-12-27 | 1980-07-09 | Hitachi Ltd | Forming device for wet oxygen and heat treatment furnace provided with the said device |
-
1981
- 1981-10-12 JP JP15005981U patent/JPS5856435U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5590405A (en) * | 1978-12-27 | 1980-07-09 | Hitachi Ltd | Forming device for wet oxygen and heat treatment furnace provided with the said device |
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