JPS5877085A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5877085A
JPS5877085A JP56173960A JP17396081A JPS5877085A JP S5877085 A JPS5877085 A JP S5877085A JP 56173960 A JP56173960 A JP 56173960A JP 17396081 A JP17396081 A JP 17396081A JP S5877085 A JPS5877085 A JP S5877085A
Authority
JP
Japan
Prior art keywords
data
writing
bit
selection signal
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56173960A
Other languages
Japanese (ja)
Other versions
JPS623504B2 (en
Inventor
Takemi Igarashi
五十嵐 丈美
Kazumitsu Kobayashi
小林 和称
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56173960A priority Critical patent/JPS5877085A/en
Publication of JPS5877085A publication Critical patent/JPS5877085A/en
Publication of JPS623504B2 publication Critical patent/JPS623504B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers

Landscapes

  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To realize the independent writing to an optional bit of plural data groups, by holding the writing control signals at a data bit selection signal latching circuit and controlling the writing data which is fed later with the output of a latching circuit. CONSTITUTION:An address ADD indicating a data storing area is applied, and a chip selection signal CS and writing signal WE have a fall respectively. Thus the data bit selection signals added to data input/output terminals 1/01-1/04 are latched to a latching circuit 8. Now it is supposed that the terminal 1/03 is equal to a bit which requires the writing, and accordingly the bit is set at ''1'' with a time band (a) and ''0'' with other time bands. When the signals CS and WE have a rise respectively, the data is latched. Then only the data of 1/03 is written at a time band (b), and other data become to the read out state. In such way, the independent writing is possible to an optional bit of the writing control signals comprising plural data groups.

Description

【発明の詳細な説明】 (1)発明の技術分野 メモリに於ける読出し/書込み制御方式に関するO (鴫 技術の背景  ・ 情報処理システムに於けるデータ処理速度の向上はメモ
リアクセスタイムの減少に大きく依存してお〉、このた
めよシ性能の秀れたメモリの出現が望すれている〇 (3)従来技術と問題点 複数のデータ入力端子又はデータ入出力端子を有する半
導体メモリ拡複数のデータ群の任意のビットに対しての
み独立に読出し/書込み動作を行々うことは出来ず、特
に書込み動作時には一連のデータビットを読出して再書
込みをする必要があうた0従って、例えば一連のデータ
ビットの中、成る1ビツトのみ変更したい場合4mビッ
トの格納され九番地の一連のビット全部を続出し、変更
を要する1ビツトは勿論その他の残シの全ビットも再書
込みされるため処理時間の短縮を計ることは不可能であ
る欠点を有す0 (4)  発明の目的 本発明社書込み動作時複数のデータ群の任意のどF)K
対して独立に書込み動作を可能にする手段を設けた半導
体メモリを提供する仁とを目的とする。
[Detailed Description of the Invention] (1) Technical Field of the Invention Regarding read/write control methods in memory For this reason, it is desired to develop a memory with excellent performance. (3) Prior art and problems The data of a semiconductor memory expansion having multiple data input terminals or data input/output terminals is desired. It is not possible to independently perform a read/write operation on any bit of a group; in particular, during a write operation, it is necessary to read and rewrite a series of data bits. Therefore, e.g. If you want to change only one bit among the bits, the entire series of 4m bits stored at address 9 is rewritten, and not only the 1 bit that needs to be changed but also all the remaining bits are rewritten, which saves processing time. (4) Purpose of the Invention This invention has the disadvantage that it is impossible to measure the shortening of data.
The object of the present invention is to provide a semiconductor memory provided with a means for independently writing data into the semiconductor memory.

(5)発明の構成 本発明はメモリ内部にデータビット選択信号ラッチ回路
を設は通常のデータ入力端子又はデータ入出力端子に付
加された書込み制御信号であるデータビット選択信号を
判別する仁とにょシ任意のビットに対して独立に書込み
動作を可能としたものである。
(5) Structure of the Invention The present invention provides a data bit selection signal latch circuit inside the memory to detect a data bit selection signal which is a write control signal added to a normal data input terminal or a data input/output terminal. It is possible to write to any bit independently.

(6)発明の実施例 第1図は本発明の書込み動作タイミングを示す。メモリ
は一例としてデータ入出力端子が4の場合、即ちデータ
ビットが4ビツトの場合を示す。データ格納番地を指示
するアドレスADDが与えられ、チップを選択するチッ
プセレクト信号C8が立下り、書込み信号WEが立下る
とデータ入力端子l101. l102. l103.
  l104に付加されたデータビット選択信号をラッ
チする。例えばl103が書込みを要するビットで他は
書込みを要さなりビットとすればl103のみaで示す
時間帯が11”で他はW″0101状態OC8が立上夛
WE%立上るとデータをうVチすゐ。この場合1101
.l102.l104はbで示す時間帯が読出し状態と
なF)、1703のみデータビット選択信号が、′″1
1でl103のみ書込み要求であることを示すため工1
03のbで示す時間帯のデータが書込まれる0例えばメ
峰りMのn番地のデータがIlo I K対してデータ
が1八l102.l103.l104に対してデータが
夫々mt+sであうたデータ群を工103のみ@01と
したい場合l101.l102.l104には夫々″″
0′。
(6) Embodiment of the Invention FIG. 1 shows the write operation timing of the invention. As an example, the memory has four data input/output terminals, that is, four data bits. When the address ADD indicating the data storage address is given, the chip select signal C8 for selecting a chip falls, and the write signal WE falls, the data input terminals l101. l102. l103.
The data bit selection signal added to l104 is latched. For example, if l103 is a bit that requires writing and the others are bits that do not, then only l103 has a time period of 11'' indicated by a, and the others are W''0101. Chisui. In this case 1101
.. l102. l104 is in the read state during the time period indicated by b), and only 1703 has a data bit selection signal of '''1.
1 to indicate that only l103 is a write request.
For example, the data at address n of Memineri M is 18 l102. l103. If you want to set the data group whose data is mt+s for l104 to @01 only for engineering 103, l101. l102. l104 has ″″ respectively.
0′.

@l”、@1#が読出されl103に対するメモリMの
n番地の’1”Ai” 0’ K書替えられる。
@l'' and @1# are read and rewritten to '1''Ai''0'K at address n of memory M for l103.

第2図は本発明の一実施例を示す回路のブロック図であ
夛、第1図と同様−例としてデータ入出力端子が、4の
場合を示す。行アドレス信号線ローデコーダ1モデツー
ドされ、列アドレス信号は′3ラムデコーダ4でデコー
ドされコラム入出力回路4を経てメモリ七ルアレイ2の
アドレスを選択する0第1図同様データ入出力端′子l
10Sに書込みを要するデータが加えられ、他oデーp
入出力11111子l101. l102. l104
は書込み不要とすると、第1図に示すシーケンでチップ
セレクト信号が、CB端子に、書込み信号がWE端子に
加えられ賞シック制御回路7によ)データ出力バシフ1
回路6と入力データ制御回路3が制御される。データ入
出力端子l103のみ第1図のシーケンスでオンとなシ
データピット選択信号が@1mであることを示す〇を夫
々対応するw、 x、 y、 zrcwg端子の書込み
信号の立下シによりラッチする。前記の如くl103の
み″11であるためデータビット選択信号ラッチ回路8
のY社端子Qを″1’にセットし奇を@O“にセットし
てデータ人カパッフテ5のゲート11を開き入力データ
制御回路3へ書込みデータを送る。入力データ制御回路
3はデータビット選択信号ラッチ回路8のYのQ端子出
力と前記−ジtり制御!11回路7の制御によ1咳デー
子工103に対応する番地にデータを書込む。
FIG. 2 is a block diagram of a circuit showing an embodiment of the present invention, and is similar to FIG. 1; for example, it shows a case where there are four data input/output terminals. The row address signal line is decoded by the row decoder 1, and the column address signal is decoded by the ram decoder 4 and passes through the column input/output circuit 4 to select the address of the memory array 2.
Data that needs to be written is added to 10S, and other data are
Input/output 11111 child l101. l102. l104
If writing is not necessary, the chip select signal is applied to the CB terminal and the write signal is applied to the WE terminal in the sequence shown in FIG.
The circuit 6 and the input data control circuit 3 are controlled. Only the data input/output terminal l103 is turned on in the sequence shown in Figure 1. The 〇 indicating that the data pit selection signal is @1m is latched by the falling edge of the write signal of the corresponding w, x, y, and zrcwg terminals. do. As mentioned above, since only l103 is "11", the data bit selection signal latch circuit 8
The terminal Q of company Y is set to "1" and O is set to @O, the gate 11 of the data controller 5 is opened and the write data is sent to the input data control circuit 3. The input data control circuit 3 controls the Y/Q terminal output of the data bit selection signal latch circuit 8 and the above-mentioned - jitter control! Under the control of the 11 circuit 7, data is written to the address corresponding to the 1 cough data child 103.

との時データ出カバv7ア6社データビット選択信号ラ
ッチ回路80Yの互端子が@Omのためそのゲート15
をじて出力をデータ入出力端子3へ送ることを阻止す石
◎ データビット選択信号ラッチ回路8のW、X。
When the data output cover v7A6 data bit selection signal latch circuit 80Y has mutual terminal @Om, its gate 15
◎ W, X of data bit selection signal latch circuit 8.

2はデータ入出力端子l101.l102.l104が
@0#の九め夫々の端子Qを@O’KQt″″1”にセ
ットする。従ってデータ人カパッファ5のゲ−)9.1
0.12は閉じられてデータの転送は阻止され、データ
出力パッ7ア6のゲート13゜14.16は開かれて、
四シック制御回路7の制御によシ読出し状態となる。
2 is a data input/output terminal l101. l102. l104 sets the terminal Q of each ninth terminal of @0# to @O'KQt''''1''. Therefore, data person Kapuffer 5's game) 9.1
0.12 is closed to prevent data transfer, and the gates 13, 14, and 16 of the data output pad 7a are opened.
Under the control of the four-thick control circuit 7, the read state is entered.

上記説明はデータ入出力端子3の書込みについて述べ九
が他の端子でも同様であ〕、且つ2端子以上複数の端子
に同時にデータビット選択信号を重畳させれば重畳され
た端子に対応する複数のビットが書込み出来ること4同
様である。
The above explanation refers to writing to the data input/output terminal 3, and the same applies to other terminals], and if data bit selection signals are simultaneously superimposed on two or more terminals, multiple terminals corresponding to the superimposed terminals Similarly to 4, bits can be written.

(7)発明の詳細 な説明した通り本発明はデータ入力端子又はデータ入出
力端子に書込み制御信号であるデータビット選択信号を
重畳し、且つ誼データビvト選択信号を″)ッチする手
段としてデータビット選択信号l!Pシチ回路を設け、
従来使用されていなかった書込み信号の立下りを利用し
て、該データビット選択信号をラッチするととで、デー
タ群の任意のビットを書込むヒとが可能とな)、書込み
動作に必要な読出し動作を不要とし情報処理システムの
メモリアクセスタイムを短縮し得ることが可能で、その
効果は大なるものがある。
(7) As described in detail, the present invention is a means for superimposing a data bit selection signal, which is a write control signal, on a data input terminal or a data input/output terminal, and for checking the data bit selection signal. A data bit selection signal l!P circuit is provided,
By latching the data bit selection signal using the falling edge of the write signal, which has not been used in the past, it is possible to write any bit of the data group), and perform the read operations necessary for the write operation. It is possible to reduce the memory access time of the information processing system by making the operation unnecessary, and the effect is great.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の書込み動作タイオングを示す図で第2
図は本発明の一実施例を示す回路のプロン Vり図である。 図中1は一一デコーダ、2社メモリセルアレイ。 3は入力データ制御回路、4はコラム入出力回路。 及びコツムデプ、−ダ、5はデータ人カバv7ア。 6はデータ出力パッ7ア、7はpシック制御回路。 8はデータビット選択信号ラッチ回路である。
FIG. 1 is a diagram showing the write operation timing of the present invention.
The figure is a vertical diagram of a circuit showing an embodiment of the present invention. In the figure, 1 is a 11 decoder and 2 memory cell array. 3 is an input data control circuit, and 4 is a column input/output circuit. And Kotsum Dep, -da, 5 is data human cover v7a. 6 is a data output pad 7a, and 7 is a p-thick control circuit. 8 is a data bit selection signal latch circuit.

Claims (1)

【特許請求の範囲】[Claims] 複数のデータ入力端子又紘データ入出力端子を有する半
導体メモリに於いて、データビット選択信号2ツチ回路
を設け、上記データ入力端子又はデータ入出力端子より
書込みデータに先行して入力される書込み制御信号を腋
ラッチ回路に保持せしめ、その後入力される書込みデー
タを#ラッチ回路出力によシ制御するζAKより複数の
データ群の任意のピッ)K対して独立に書込み動作を行
なう仁とを可能とするヒとを特徴とする半導体メモリ。
In a semiconductor memory having a plurality of data input terminals or data input/output terminals, a data bit selection signal 2-bit circuit is provided to control write data that is inputted prior to write data from the data input terminal or data input/output terminal. The signal is held in the armpit latch circuit, and then the input write data is controlled by the latch circuit output.It is possible to independently perform a write operation on any pin (K) of a plurality of data groups from ζAK. Semiconductor memory is characterized by the ability to
JP56173960A 1981-10-30 1981-10-30 Semiconductor memory Granted JPS5877085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56173960A JPS5877085A (en) 1981-10-30 1981-10-30 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56173960A JPS5877085A (en) 1981-10-30 1981-10-30 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5877085A true JPS5877085A (en) 1983-05-10
JPS623504B2 JPS623504B2 (en) 1987-01-26

Family

ID=15970232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56173960A Granted JPS5877085A (en) 1981-10-30 1981-10-30 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5877085A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58224496A (en) * 1982-06-22 1983-12-26 Nec Corp Method for writing data in ram
JPS60179984A (en) * 1984-02-27 1985-09-13 Nec Corp Memory circuit system
JP2010287896A (en) * 2006-05-31 2010-12-24 Nec Infrontia Corp Enclosure device and electronic device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6369102U (en) * 1986-10-24 1988-05-10

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191636A (en) * 1974-10-08 1976-08-11 Adoresushiteiho deetaseiseiho ronrijunikenshutsuho randamuakusesukiokusochi oyobi sonokokujishingohatsuseikairo oyobi sensuzofukuki
JPS5378131A (en) * 1976-12-22 1978-07-11 Fujitsu Ltd Semiconductor memory element
JPS5397933U (en) * 1977-01-12 1978-08-09
JPS54134934A (en) * 1978-04-12 1979-10-19 Toshiba Corp Semiconductor memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191636A (en) * 1974-10-08 1976-08-11 Adoresushiteiho deetaseiseiho ronrijunikenshutsuho randamuakusesukiokusochi oyobi sonokokujishingohatsuseikairo oyobi sensuzofukuki
JPS5378131A (en) * 1976-12-22 1978-07-11 Fujitsu Ltd Semiconductor memory element
JPS5397933U (en) * 1977-01-12 1978-08-09
JPS54134934A (en) * 1978-04-12 1979-10-19 Toshiba Corp Semiconductor memory device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58224496A (en) * 1982-06-22 1983-12-26 Nec Corp Method for writing data in ram
JPS60179984A (en) * 1984-02-27 1985-09-13 Nec Corp Memory circuit system
JP2010287896A (en) * 2006-05-31 2010-12-24 Nec Infrontia Corp Enclosure device and electronic device

Also Published As

Publication number Publication date
JPS623504B2 (en) 1987-01-26

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