JPS5885583A - 半導体レ−ザ装置の製造方法 - Google Patents

半導体レ−ザ装置の製造方法

Info

Publication number
JPS5885583A
JPS5885583A JP18309181A JP18309181A JPS5885583A JP S5885583 A JPS5885583 A JP S5885583A JP 18309181 A JP18309181 A JP 18309181A JP 18309181 A JP18309181 A JP 18309181A JP S5885583 A JPS5885583 A JP S5885583A
Authority
JP
Japan
Prior art keywords
layer
semiconductor
laser
ion implantation
high resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18309181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS622719B2 (lt
Inventor
Tadashi Fukuzawa
董 福沢
Nobutoshi Matsunaga
松永　信敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP18309181A priority Critical patent/JPS5885583A/ja
Publication of JPS5885583A publication Critical patent/JPS5885583A/ja
Publication of JPS622719B2 publication Critical patent/JPS622719B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP18309181A 1981-11-17 1981-11-17 半導体レ−ザ装置の製造方法 Granted JPS5885583A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18309181A JPS5885583A (ja) 1981-11-17 1981-11-17 半導体レ−ザ装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18309181A JPS5885583A (ja) 1981-11-17 1981-11-17 半導体レ−ザ装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5885583A true JPS5885583A (ja) 1983-05-21
JPS622719B2 JPS622719B2 (lt) 1987-01-21

Family

ID=16129595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18309181A Granted JPS5885583A (ja) 1981-11-17 1981-11-17 半導体レ−ザ装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5885583A (lt)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951586A (ja) * 1982-09-17 1984-03-26 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS59188377A (ja) * 1983-04-08 1984-10-25 Mitsubishi Electric Corp パルス幅変調方式電圧形インバ−タの制御方法
JPH01196888A (ja) * 1988-02-02 1989-08-08 Matsushita Electric Ind Co Ltd 光集積回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951586A (ja) * 1982-09-17 1984-03-26 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS59188377A (ja) * 1983-04-08 1984-10-25 Mitsubishi Electric Corp パルス幅変調方式電圧形インバ−タの制御方法
JPH01196888A (ja) * 1988-02-02 1989-08-08 Matsushita Electric Ind Co Ltd 光集積回路

Also Published As

Publication number Publication date
JPS622719B2 (lt) 1987-01-21

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