JPS5890723A - Physical property changing method by laser beam irradiation - Google Patents

Physical property changing method by laser beam irradiation

Info

Publication number
JPS5890723A
JPS5890723A JP56191113A JP19111381A JPS5890723A JP S5890723 A JPS5890723 A JP S5890723A JP 56191113 A JP56191113 A JP 56191113A JP 19111381 A JP19111381 A JP 19111381A JP S5890723 A JPS5890723 A JP S5890723A
Authority
JP
Japan
Prior art keywords
laser beam
single crystal
polycrystalline silicon
large area
angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56191113A
Other languages
Japanese (ja)
Inventor
Shinichi Sato
真一 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56191113A priority Critical patent/JPS5890723A/en
Publication of JPS5890723A publication Critical patent/JPS5890723A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To permit a part of large area to be transformed into a single in a short period of time through an effective use of the energy of a laser beam, by changing the angle of irradiation with the laser beam. CONSTITUTION:A polycrystalline silicon film 3 is formed all over an oxide film 2 formed on a silicon substrate 1. A laser beam 10 is applied thereto to transform a desired part into a single crystal. In this case, a part of large area or a resistor required to be transformed into a single crystal long in one direction is successively scanned with the beam 10, the angle of irradiation with which is changed. By being obliquely incident on the surface of the substrate 1, a considerable amount of the beam 10 passing the polycrystalline silicon film 3 is reflected by the oxide film 2. Therefore, the amount of the beam 10 absorbed is small correspondingly, and the beam energy can be effectively used, so that it is possible to transform a part of large area into a single crystal in a short period of time.

Description

【発明の詳細な説明】 この発明は、レーザビームを照射して物質を物理的ある
いは化学的に変化させる方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of physically or chemically changing a substance by irradiating it with a laser beam.

最近、多結晶シリコン等に対し、レーザビームを所望の
部分ｌ二照射して単結晶シリコン化することが盛んに行
なわれている。これにより素子を立体的に構成すること
が可能である。このような場合、レーザビームを所望の
部分の上部から一定二羊ルギーで照射し、必要な部分に
わたってビームを横方向ｌニスキャンさせることによっ
て、一定面積の多結晶シリコン膜を単結晶化してきた。Recently, it has become popular to irradiate a desired portion of polycrystalline silicon with a laser beam to convert it into single crystal silicon. This allows the device to be configured three-dimensionally. In such cases, a polycrystalline silicon film of a certain area has been made into a single crystal by irradiating a laser beam from above the desired portion with a constant energy and scanning the beam in the lateral direction over the necessary portion.

しかし、このような方法によれば、かなりの面積につい
て単結晶化が必要な場合、カミなＩ〕のエネルギーと時
間が必要となってし）るの力ｌ常である。However, according to such a method, if it is necessary to single-crystallize a considerable area, a considerable amount of energy and time are required.

本発明は、このような点に鑑みてなされたもので、レー
ザビームの照射角度を変えること（二よって、効率良く
単結晶化を行なおうとするものである。The present invention has been made in view of these points, and aims to achieve efficient single crystallization by changing the irradiation angle of a laser beam (2).

以下、従来の方法と比較しなめ１ら本発明の方法を述べ
る。Hereinafter, the method of the present invention will be described in comparison with the conventional method.

第１図は従来のレーザビームの照射方法を示すもので、
シリコン基板（１）上ｄ二シリコン酸化膜（２）を形成
し、その上に全面に多結晶シリコン膜（３）を形、所望
の部分の多結晶シリコン膜（３）を単結晶シリコン（３
′）化する〔第１図（ｂ）〕。その後、この単結晶シリ
コン（す）の上に不純物等を拡散して、三次元的に抵抗
あるいはトランジスタ等の素子を形成する。この場合、
ビームは下地にかなり吸収され。Figure 1 shows the conventional laser beam irradiation method.
A di-silicon oxide film (2) is formed on a silicon substrate (1), a polycrystalline silicon film (3) is formed on the entire surface, and a desired portion of the polycrystalline silicon film (3) is covered with single crystal silicon (3).
') [Figure 1(b)]. Thereafter, impurities and the like are diffused onto this single crystal silicon to three-dimensionally form elements such as resistors or transistors. in this case,
The beam is considerably absorbed by the substrate.

広領域の単結晶化については、ビームの照射時間がかか
り、生産効率上好ましくなし）、、なお、（至）−よ反
射ビーム、　　（３０）は吸収ビームである。Regarding the single crystallization of a wide area, it takes a long time to irradiate the beam, which is not preferable in terms of production efficiency.

第２図は本発明によるレーザビームアニールの方法を示
す断面図で、従来の方法と同じように。FIG. 2 is a cross-sectional view illustrating the method of laser beam annealing according to the present invention, similar to the conventional method.

シリコン基板（１）上に形成された酸化膜（２）上の全
面に多結晶シリコン膜（３）を形成し、この上からレー
ザビームｕｌｌｌを照射して所望の部分を単結晶化させ
る場合、大面積あるいは抵抗体で一方向に長く単結晶化
させる必要のある部分については、レーザビームｕｌの
角度を任意に変化させたり、あるいは垂直ビームと組合
せたりして、ビーム＋ｌｌを順次スキャンさせＣいく。When forming a polycrystalline silicon film (3) on the entire surface of an oxide film (2) formed on a silicon substrate (1), and irradiating the polycrystalline silicon film (3) with a laser beam from above to monocrystallize a desired portion, For large areas or parts of resistors that need to be made into single crystals long in one direction, the angle of the laser beam ul can be arbitrarily changed, or the laser beam can be combined with a vertical beam to sequentially scan the beam +ll. .

レーザビーム＋ｌｌが斜めに入射した場合、多結晶シリ
コン膜（３）を通過した後、かなりのビームが下地の酸
化膜（２）で入射角と等角度で反射する〔第２図（ａ）
〕。そのため、吸収される分が少く、ビームエネルギー
を有効に使うことができるため、短時間で大面積の単結
晶化が行なえる〔第２図ｔｂｌ　）　。When the laser beam +ll is incident obliquely, after passing through the polycrystalline silicon film (3), a considerable amount of the beam is reflected by the underlying oxide film (2) at an angle equal to the incident angle [Figure 2 (a)
]. Therefore, the absorbed amount is small and the beam energy can be used effectively, so that a large area can be formed into a single crystal in a short time (Fig. 2 tbl).

ビーム＋ｌｌ）の角度は、下地の材料にもより、必要な
デバイス特性に応じて最も効率のよい角度を設定してや
れば良い。垂直ビームと科目ビームの２明ではレーザビ
ームによって多結晶シリコンをアニールし、単結晶化す
る場合について述べたが。The angle of the beam +ll) may be set to the most efficient angle depending on the underlying material and depending on the required device characteristics. Vertical beam and subject beam In the second section, we described the case where polycrystalline silicon is annealed with a laser beam and made into a single crystal.

部分的にレーザを照射して、物質の化学的、物理的性質
を変化させるすべての場合について適用できることはい
うまでもない。It goes without saying that this method can be applied to all cases where the chemical or physical properties of a substance are changed by partially irradiating it with a laser.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来のしＩザピームの照射方法を示す断面図、
第２図は本発明によるレーザビームの照射方法の一実施
例を示す断面図である、図において、（１）はミリコン
基板、（２）はシリコン酸化膜、（３）は多結晶シリコ
ン膜、　（３’）は単結晶シリコン膜、ｕＩはレーザビ
ームである。 なお１図中同一番号は同−又は相当部分を示す。 代理人　葛野信− 第１図 第２図FIG. 1 is a cross-sectional view showing the conventional irradiation method of I-Zapeem.
FIG. 2 is a cross-sectional view showing an embodiment of the laser beam irradiation method according to the present invention. In the figure, (1) is a millicon substrate, (2) is a silicon oxide film, (3) is a polycrystalline silicon film, (3') is a single crystal silicon film, and uI is a laser beam. Note that the same numbers in each figure indicate the same or corresponding parts. Agent Makoto Kuzuno - Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] レーデビームを照射して、物質を物理的あるいは化学的
に変化させる場合、上記レーザビームを科目方向から照
射することを特徴とするレーザビーム照射による物性変
化方法。A method for changing physical properties by laser beam irradiation, characterized in that when a substance is physically or chemically changed by irradiating a laser beam, the laser beam is irradiated from the target direction.
JP56191113A 1981-11-25 1981-11-25 Physical property changing method by laser beam irradiation Pending JPS5890723A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56191113A JPS5890723A (en) 1981-11-25 1981-11-25 Physical property changing method by laser beam irradiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56191113A JPS5890723A (en) 1981-11-25 1981-11-25 Physical property changing method by laser beam irradiation

Publications (1)

Publication Number Publication Date
JPS5890723A true JPS5890723A (en) 1983-05-30

Family

ID=16269070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56191113A Pending JPS5890723A (en) 1981-11-25 1981-11-25 Physical property changing method by laser beam irradiation

Country Status (1)

Country Link
JP (1) JPS5890723A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5888839A (en) * 1994-05-02 1999-03-30 Sony Corporation Method of manufacturing semiconductor chips for display
JP2002289524A (en) * 2000-12-27 2002-10-04 Semiconductor Energy Lab Co Ltd Laser irradiation apparatus, laser annealing method, and method for manufacturing semiconductor device
JP2003059859A (en) * 2001-08-10 2003-02-28 Semiconductor Energy Lab Co Ltd Device and method for irradiating laser and method for manufacturing semiconductor device
US7498212B2 (en) 2000-12-27 2009-03-03 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and semiconductor device fabricating method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5888839A (en) * 1994-05-02 1999-03-30 Sony Corporation Method of manufacturing semiconductor chips for display
US6248606B1 (en) 1994-05-02 2001-06-19 Sony Corporation Method of manufacturing semiconductor chips for display
JP2002289524A (en) * 2000-12-27 2002-10-04 Semiconductor Energy Lab Co Ltd Laser irradiation apparatus, laser annealing method, and method for manufacturing semiconductor device
US7498212B2 (en) 2000-12-27 2009-03-03 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and semiconductor device fabricating method
US7872246B2 (en) 2000-12-27 2011-01-18 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and semiconductor device fabricating method
JP2003059859A (en) * 2001-08-10 2003-02-28 Semiconductor Energy Lab Co Ltd Device and method for irradiating laser and method for manufacturing semiconductor device

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