JPS59103386A - 多素子型光電変換素子の製造方法 - Google Patents

多素子型光電変換素子の製造方法

Info

Publication number
JPS59103386A
JPS59103386A JP57213138A JP21313882A JPS59103386A JP S59103386 A JPS59103386 A JP S59103386A JP 57213138 A JP57213138 A JP 57213138A JP 21313882 A JP21313882 A JP 21313882A JP S59103386 A JPS59103386 A JP S59103386A
Authority
JP
Japan
Prior art keywords
film
light
substrate
receiving elements
anodic oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57213138A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6260821B2 (2
Inventor
Makoto Ito
真 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57213138A priority Critical patent/JPS59103386A/ja
Publication of JPS59103386A publication Critical patent/JPS59103386A/ja
Publication of JPS6260821B2 publication Critical patent/JPS6260821B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP57213138A 1982-12-03 1982-12-03 多素子型光電変換素子の製造方法 Granted JPS59103386A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57213138A JPS59103386A (ja) 1982-12-03 1982-12-03 多素子型光電変換素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57213138A JPS59103386A (ja) 1982-12-03 1982-12-03 多素子型光電変換素子の製造方法

Publications (2)

Publication Number Publication Date
JPS59103386A true JPS59103386A (ja) 1984-06-14
JPS6260821B2 JPS6260821B2 (2) 1987-12-18

Family

ID=16634200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57213138A Granted JPS59103386A (ja) 1982-12-03 1982-12-03 多素子型光電変換素子の製造方法

Country Status (1)

Country Link
JP (1) JPS59103386A (2)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06147557A (ja) * 1992-10-30 1994-05-27 Haabesuto Syst:Kk 空気調和機

Also Published As

Publication number Publication date
JPS6260821B2 (2) 1987-12-18

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