JPS59155131A - Method for contact exposure - Google Patents

Method for contact exposure

Info

Publication number
JPS59155131A
JPS59155131A JP59005563A JP556384A JPS59155131A JP S59155131 A JPS59155131 A JP S59155131A JP 59005563 A JP59005563 A JP 59005563A JP 556384 A JP556384 A JP 556384A JP S59155131 A JPS59155131 A JP S59155131A
Authority
JP
Japan
Prior art keywords
wafer
mask
group
vent group
close
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59005563A
Other languages
Japanese (ja)
Inventor
Hiroshi Nishizuka
西塚 弘
Susumu Komoriya
進 小森谷
Kiyoshi Yoshida
清 吉田
Hiroshi Maejima
前島 央
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59005563A priority Critical patent/JPS59155131A/en
Publication of JPS59155131A publication Critical patent/JPS59155131A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To easily form a sufficiently close-contact condition between a mask and a wafer by a method wherein the first vent group for the center part of the wafer and the second vent group for the circumferential part of the wafer are provided on the main part of the wafer chuck, and the operation by each vent group is controlled independently. CONSTITUTION:On the wafer chuck main body 12, the first vent group 10a to be used for flowout and sucking of the center part of a semiconductor wafer 12 and the second vent group 10b to be used for flowout and sucking of the circumferential part of the wafer 12 are provided. A light source to be used for exposure, which is not shown in the diagram, is arranged above the mask 14 for exposure which will be used for close-contact and isolation of the wafer 12, and it is made to irradiate on the photoresist material through the intermediary of the mask 14. When the wafer 12 is going to be close-contacted to the mask 14 for exposure, a blow-up and close-contact operation has priority to the blow-up and close-contact operation to be performed through the intermediary of the second vent group 10b.

Description

【発明の詳細な説明】 この発明に1例えば各種半導体装置を製造する場合に使
用されるマスクアライナに関し、特にマスクアライナに
おいて、露光用マスクに対して半導体ウェハを密着させ
たり、露光用マスクから半導体ウェハを分離したりする
ためのウェハ密着・分離機構の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION This invention relates to a mask aligner used, for example, in manufacturing various semiconductor devices, and in particular, in a mask aligner, a semiconductor wafer is brought into close contact with an exposure mask, and a semiconductor wafer is removed from an exposure mask. This invention relates to improvements in wafer adhesion/separation mechanisms for separating wafers.

従来、この種のウェハ密着・分離機構としては、ウェハ
チャック本体に多数の通気孔を設け、マスクに半導体ウ
ニノ・を密着させる際には上記通気孔から圧縮ガスを吹
上げ、マスクからウニノーを分離する際には上記通気孔
を介してウェハを吸引するものが知られているうまた、
この種の機構において、マスクにウェハを密着させる場
合に、一層厳密な密着状態を得たいときは、ウニノ・を
取囲む所定空間糾減圧状態下において大気圧による密着
力補強を行なったり、あるいはウェハチャックとマスク
との間に機械的外力を付加したりすることも知られてい
る。
Conventionally, this type of wafer adhesion/separation mechanism has a number of vent holes in the wafer chuck body, and when the semiconductor UNO is brought into close contact with the mask, compressed gas is blown up from the vent holes to separate the UNO from the mask. It is also known that the wafer is sucked through the ventilation hole when the wafer is removed.
In this type of mechanism, if you want to achieve even stricter adhesion when adhering the wafer to the mask, you can strengthen the adhesion using atmospheric pressure in a predetermined space surrounding the mask under reduced pressure, or It is also known to apply an external mechanical force between the chuck and the mask.

しかるに、従来のウェハ密着・分離機構で汀、かかる密
着力補強手段をとってもなおマスクとウェハとの間に特
にウェハ中央部で十分な密着状態を形成するのが困難で
あった。すなわち、マスクアライメントの対象となる半
導体ウェハは通常その表面が鏡面研磨され且つホトレジ
スト剤でおおわれており、鏡面研磨されたウェハ表面は
中央部に比べ周辺部が10μm位高(凹凸状になってい
るのが普通である。このようなウェハをウェハチャック
によりほぼ一様な吹上げ圧力でマスクに対して押圧する
と、ウニノ・周辺部がホトレジスト剤を介してマスク面
に優先的に密着し、ウニノ・中央部とマスク面との間に
はガスが閉じこめられ、空隙ができる、この空隙はウニ
ノ・周辺部がマ゛スクに密着しているために、いわば封
止された状態にあるので、吹上げ圧力を単純に増大させ
ただけでは。
However, in the conventional wafer adhesion/separation mechanism, it is still difficult to form sufficient adhesion between the mask and the wafer, especially at the center of the wafer, even with such adhesion reinforcement means. In other words, the surface of the semiconductor wafer that is the target of mask alignment is usually mirror-polished and covered with a photoresist agent, and the mirror-polished wafer surface has a periphery that is about 10 μm higher than the center (has an uneven shape). When such a wafer is pressed against a mask using a wafer chuck with a nearly uniform blowing pressure, the unino and peripheral parts adhere preferentially to the mask surface via the photoresist agent, and the unino Gas is trapped between the center and the mask surface, creating a gap. This gap is in a sealed state because the inner and peripheral parts are in close contact with the mask, so it does not blow up. Simply increasing the pressure.

消滅させるのが困難なものであった。従って、ウェハと
マスクとの密着度が特にウニノ・中央部において低下し
てしまい、このため、マスクツくターンの解像不良が発
生していた。
It was difficult to eliminate. Therefore, the degree of adhesion between the wafer and the mask deteriorates, particularly in the central part of the wafer, resulting in poor resolution of the mask cross-turn.

また、上記したマスクーラエフ\間の空隙はマスクから
ウェハを分離するのを妨げるように作用していたので、
従来のウニノ・密着・分離機構ではウェハ分離作業も容
易でなかったつすなわち、ウェハチャックによりほぼ一
様な吸引力でウニノーをマスクから引離そうとすると、
主としてウニノーの中央部が先にマスク面から離れ、前
述の空隙に相当する部分に減圧部が形成されるため、い
わゆるスティッキング現象が起こる。このためウニノー
チャフによる吸引力だけではウニノ・分離が困難なこと
がしばしばであった。
In addition, the above-mentioned gap between the masks acted to prevent the separation of the wafer from the mask.
It was not easy to separate the wafer using the conventional UNINO, close contact, and separation mechanism.In other words, when trying to separate the UNINO from the mask using a nearly uniform suction force using a wafer chuck,
The so-called sticking phenomenon occurs mainly because the central part of the Uni-No-O leaves the mask surface first, and a depressurized part is formed in the part corresponding to the above-mentioned void. For this reason, it was often difficult to separate sea urchins using just the suction force of the sea urchin chaff.

この発明の目的は、上記した従来技術の難点を克服し、
マスクとウェハとの間に十分な密着状態を容易に形成で
きるとともにマスクからのウニノー分離を簡単且つスム
ーズに達成できる新規なマスクアライナを提供すること
にある。
The purpose of this invention is to overcome the above-mentioned difficulties of the prior art,
An object of the present invention is to provide a novel mask aligner that can easily form a sufficient adhesion state between a mask and a wafer, and can easily and smoothly separate the mask from the wafer.

この発明の特徴の一つは、ウェハの中央部を吹上又は吸
引するための第1の通気孔群と、ウニノ\の周辺部を吹
上又は吸引するための第2の通気孔群とをウェハチャッ
ク本体に設け、ウニへの密着及び/又は分離にあたり上
記第1の通気孔群による吹上密着操作及び/又は吸引分
離操作と上記第2の通気孔群による同様の操作とを相互
に独立に制御しつるようにした点にある。ここで、「通
気孔群」なる用語は本来的に多数の通気孔の一群を意味
するが、本願明細書中ではそのような本来の意味の他に
、ウェハの中央部又は周辺部に対応して所定パターン(
例、リング状)で連続的に形成された外観上1115の
通気孔をも含む意味で使用するう この発明の特徴の一つによれば、ウェハの中央部と周辺
部とに対して別個に吹上密着操作又は吸引分離操作をほ
どこすことができ、しかもその際の密着力又は吸引力の
強さなどは別個に調整できる。このため、制御態様が豊
富になり、ウニノーの寸法、形状、特性などに適合した
密着・分離操作が可能になる1例えば、マスクに対して
ウニノ1を密着させる場合には、第1の通気孔群を介し
て行なう吹上密着操作を、第2の通気孔群を介して行な
う同様の操作より優先させるように制御を行うことがで
きる。このような制御方式をとると、ウェハの中央部が
周辺部より先にマスク面に密着するので、マスク−ウェ
ハ間に空隙が形成されることがなくなり、ウェハ全体と
して十分な密着状態を得ることができる。従ってマスク
パターンの解像不良は大幅に減少するウ一方、マスクか
らウェハを分離する場合には、第2過気孔群を介して行
なう吸引分離操作を、第1通気孔群を′介して行なう同
様な操作よりも優先させるように制御を行なうことがで
きる。このような制御方式をとると5ウエハの周辺部が
中央部より先にマスク面から離れるので、マスク−ウェ
ハ間に減圧部が形成されることがなくなり、ウェア1分
lIIは簡単且つスムーズに行われる。
One of the features of this invention is that a first group of ventilation holes for blowing up or suctioning the central part of the wafer and a second group of ventilation holes for blowing up or suctioning the peripheral part of the wafer are connected to the wafer chuck. is provided in the main body to independently control blow-up close contact operation and/or suction separation operation by the first group of vent holes and similar operation by the second group of vent holes when adhering to and/or separating the sea urchins. It's at the point where it hangs. Here, the term "vent hole group" originally means a group of a large number of vent holes, but in this specification, in addition to its original meaning, it also refers to a group corresponding to the center or peripheral part of the wafer. and the predetermined pattern (
According to one of the features of this invention, which is used to include 1115 ventilation holes in appearance that are continuously formed in the form of a ring (for example, a ring shape), separate A blow-up contact operation or a suction separation operation can be performed, and the strength of the contact force or suction force at that time can be adjusted separately. For this reason, there are many control modes, and it becomes possible to perform adhesion/separation operations that suit the size, shape, characteristics, etc. of UNINO.1 For example, when bringing UNINO 1 into close contact with the mask, the first ventilation hole Control can be performed so that a blow-up contact operation performed through the group is given priority over a similar operation performed through the second vent group. When such a control method is used, the center of the wafer comes into close contact with the mask surface before the periphery, so no gap is formed between the mask and the wafer, and the wafer as a whole can achieve sufficient adhesion. I can do it. Therefore, the resolution failure of the mask pattern is greatly reduced. On the other hand, when separating the wafer from the mask, the suction separation operation performed through the second ventilation hole group is similarly performed through the first ventilation hole group. Control can be performed to give priority to other operations. If such a control method is used, the periphery of the 5 wafers will separate from the mask surface before the center, so no depressurized area will be formed between the mask and the wafer, and the 1 minute wear process will be performed easily and smoothly. be exposed.

以下、添付図面を参照してこの発明の一実施例を説明す
る。図において、10はウニノーチャック本体であり、
これには、半導体ウニノ・12の中央部を吹上・吸引す
るための第1の通気孔群10aと、ウェハ12の周辺部
を吹上・吸引するための第2の通気孔群10bとが設け
られている。ウェハ12の密着・分離の対象となる露光
用マスク14は、適当なガラス板からなり、その下面(
ウェハ密着面)にはクロム(Cr )などからなる適宜
のパターンが被着されている。マスク14の上方には1
図示しない露光用光源が配置され、ウェハ12の表面に
塗布したホトレジスト剤をマスク14を介して照射する
ようになっているうウニノ112は、露光処理に先立っ
てマスク14の下面に密着され、露光処理後にマスク1
4から分離される。
An embodiment of the present invention will be described below with reference to the accompanying drawings. In the figure, 10 is the Uni-no-chuck body,
This includes a first group of ventilation holes 10a for blowing up and suctioning the central part of the semiconductor wafer 12, and a second group of ventilation holes 10b for blowing up and suctioning the peripheral part of the wafer 12. ing. The exposure mask 14, which is the object of adhesion and separation of the wafer 12, is made of a suitable glass plate, and its lower surface (
A suitable pattern made of chromium (Cr) or the like is deposited on the wafer adhesion surface. 1 above the mask 14
An exposure light source 112 (not shown) is arranged to irradiate the photoresist agent coated on the surface of the wafer 12 through the mask 14. Prior to the exposure process, the unit 112 is brought into close contact with the lower surface of the mask 14, and is exposed to light. Mask 1 after processing
Separated from 4.

ウェハ12のマスク14に対する密着操作及びウェハ1
2のマスク14からの分離操作は次のような機構で行わ
れる。切換装置16rr、制御系18からの切換指令に
より配管20.22に窒素(N、)からなる圧縮ガスを
供給するか又は配管20.22を真空VACでひくかを
切換制卸するものである。配管20はその途中に電磁弁
24がffけられており、ウェハチャック本体10の第
1通気孔群10aに接続されている。配管22はその途
中に電磁弁26が設けられており、ウェハチャック本体
10の第2通気孔群10bに接続されている。電磁弁2
4.26Hいずれも制御系18からの制御信号に応じて
作動するものである。
Close contact operation of wafer 12 to mask 14 and wafer 1
The separation operation of the mask 2 from the mask 14 is performed by the following mechanism. The switching device 16rr controls whether to supply compressed gas consisting of nitrogen (N) to the pipe 20.22 or to draw the pipe 20.22 with a vacuum VAC according to a switching command from the control system 18. The piping 20 has a solenoid valve 24 cut in the middle thereof, and is connected to the first group of ventilation holes 10a of the wafer chuck body 10. A solenoid valve 26 is provided in the middle of the pipe 22, and the pipe 22 is connected to the second vent group 10b of the wafer chuck body 10. Solenoid valve 2
4.26H are all operated in response to control signals from the control system 18.

マスク14に対してウェハ12を密着させる場合には、
まず、切換装置16により配管20゜22へのN2圧着
ガスを流すようにし、電磁弁24を開いた後、所定時間
(例えば、2〜3秒)後に電磁弁26を開(ように制御
系18により制御する。このようにすると、破線で示す
ようにウェハ12の中央部が先にマスク面に密着し、中
央部のガスが周辺側へ追いだされて後にウニノ・120
周辺部がマスク面に密着するようになり、このため、ウ
ニノ′−12はその中央部にガス残り又は空隙を生ずる
ことなく全面的にマスク14に密着する。従って、この
ような良好な密着状態の下では。
When bringing the wafer 12 into close contact with the mask 14,
First, the switching device 16 is used to flow N2 pressure gas to the pipes 20 and 22, and the solenoid valve 24 is opened. After a predetermined time (for example, 2 to 3 seconds), the solenoid valve 26 is opened (so that the control system 18 In this way, as shown by the broken line, the central part of the wafer 12 comes into close contact with the mask surface first, and the gas in the central part is expelled to the periphery, and the gas in the central part is then driven out to the periphery.
The peripheral portion comes into close contact with the mask surface, and therefore, the entire surface of the UNINO'-12 comes into close contact with the mask 14 without leaving any gas or voids in the central portion. Therefore, under such good adhesion conditions.

高い解像度でマスクパターン焼付(露光)処理を行なう
ことができる。なお、上記の吹上密着操作時においては
、密着力を補強するため、真空又は大気圧の力や外部か
らの機械力を併用してもよ〜)。
Mask pattern printing (exposure) processing can be performed with high resolution. In addition, during the above-mentioned blow-up close contact operation, in order to reinforce the close contact force, the force of vacuum or atmospheric pressure or external mechanical force may be used in combination.

次に、マスク14からウニノS12を分離する場合にハ
1、切換装置16により配管側を真空VACにつなぐよ
うにし、こんどは電磁弁26を開(Sた後、所定時間後
に電磁弁24を開くように制御系18により制御する。
Next, when separating the UNINO S12 from the mask 14, C1, connect the piping side to the vacuum VAC using the switching device 16, and then open the solenoid valve 26 (after S, open the solenoid valve 24 after a predetermined time). It is controlled by the control system 18 as follows.

このようにすると、破線で示すようにウニノS12の周
辺部が先にマスク14から離れて中央部へのガス流通を
うながし、し力)る後にウニノ・12の中央部がマスク
14から離れるようになり、ウニノーill:全体とし
てスムーズにマスク14から分離される。従って、従来
のようにステ(ツキング現象をひきおこすことなく容易
にウェハ分離を達成することができる。
In this way, as shown by the broken line, the peripheral part of the Uni-No-S12 first separates from the mask 14 to promote gas flow to the central part, and then the central part of the Uni-No-S12 separates from the mask 14. Therefore, it is separated from the mask 14 smoothly as a whole. Therefore, wafer separation can be easily achieved without causing the sticking phenomenon as in the prior art.

なお、以上の実゛施例の説明において、ウニ/Sチャッ
ク本体10に形成した通気孔群10a又は10bはウェ
ハ12側からみて連結したパターンをもつ1つの通気孔
であってもよく、また、密着・分離操作時の密着力又は
吸引力は中央通気孔側と周辺通気孔側とで異なるように
制御してもよい。
In addition, in the above description of the embodiment, the ventilation hole group 10a or 10b formed in the Uni/S chuck body 10 may be one ventilation hole having a connected pattern when viewed from the wafer 12 side, and The adhesion force or suction force during the adhesion/separation operation may be controlled differently between the central vent side and the peripheral vent side.

【図面の簡単な説明】[Brief explanation of the drawing]

図は、この発明の一実施例によるマスクアライナのウェ
ハ密着・分離機構を示す断面図である。 10・・・ウェハチャック本体、10a・・・第1通気
孔群、10b・・・第2通気孔群、12・・・半導体ウ
ニノ・。 14・・・露光用マスク。
The figure is a sectional view showing a wafer adhesion/separation mechanism of a mask aligner according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 10... Wafer chuck main body, 10a... 1st vent hole group, 10b... 2nd vent hole group, 12... Semiconductor unit. 14...Mask for exposure.

Claims (1)

【特許請求の範囲】 1、ウェハチャックに、ウェハの中央部を吹上するため
の第1の通気孔群と、前記ウェハの周辺部を吹上するた
めの第2の通気孔群とを設け、露光用マスクに対して前
記ウェハを密着させる際には。 前記第4通気孔群を介して行なう吹上密着操作を。 前記第2通気孔群な介して行なう吹上密着操作より優先
させるようにしたことを特徴とする密着露光方法。
[Claims] 1. A wafer chuck is provided with a first group of ventilation holes for blowing up the central part of the wafer and a second group of ventilation holes for blowing up the peripheral part of the wafer, and When the wafer is brought into close contact with the mask. A blow-up close contact operation is performed through the fourth vent group. A contact exposure method characterized in that priority is given to a blow-up contact operation performed through the second vent group.
JP59005563A 1984-01-18 1984-01-18 Method for contact exposure Pending JPS59155131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59005563A JPS59155131A (en) 1984-01-18 1984-01-18 Method for contact exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59005563A JPS59155131A (en) 1984-01-18 1984-01-18 Method for contact exposure

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP14708677A Division JPS5480086A (en) 1977-12-09 1977-12-09 Mask aligner

Publications (1)

Publication Number Publication Date
JPS59155131A true JPS59155131A (en) 1984-09-04

Family

ID=11614668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59005563A Pending JPS59155131A (en) 1984-01-18 1984-01-18 Method for contact exposure

Country Status (1)

Country Link
JP (1) JPS59155131A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61252632A (en) * 1985-05-02 1986-11-10 Hitachi Electronics Eng Co Ltd Close-contacting method for wafer and mask
JPS61252633A (en) * 1985-05-02 1986-11-10 Hitachi Electronics Eng Co Ltd Close-contacting device for wafer and mask
JPS63148622A (en) * 1986-12-12 1988-06-21 Fujitsu Ltd Vapor growth system
FR2629605A1 (en) * 1988-03-29 1989-10-06 Francou Marc Method for manufacturing microelectronic semiconductor components in microlithography by hard contact and corresponding microelectronic semiconductor components

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61252632A (en) * 1985-05-02 1986-11-10 Hitachi Electronics Eng Co Ltd Close-contacting method for wafer and mask
JPS61252633A (en) * 1985-05-02 1986-11-10 Hitachi Electronics Eng Co Ltd Close-contacting device for wafer and mask
JPS63148622A (en) * 1986-12-12 1988-06-21 Fujitsu Ltd Vapor growth system
FR2629605A1 (en) * 1988-03-29 1989-10-06 Francou Marc Method for manufacturing microelectronic semiconductor components in microlithography by hard contact and corresponding microelectronic semiconductor components

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