JPS59162119A - 気相反応用シラン精製方法 - Google Patents

気相反応用シラン精製方法

Info

Publication number: JPS59162119A
Authority: JP; Japan
Prior art keywords: silane; container; silicon; silicon oxide; reaction
Prior art date: 1983-03-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP3483683A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6241164B2 (2

Inventor

Shunpei Yamazaki

舜平山崎

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Semiconductor Energy Laboratory Co Ltd

Original Assignee

Semiconductor Energy Laboratory Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-03-03

Filing date

1983-03-03

Publication date

1984-09-13

1983-03-03 Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd

1983-03-03 Priority to JP3483683A priority Critical patent/JPS59162119A/ja

1984-09-13 Publication of JPS59162119A publication Critical patent/JPS59162119A/ja

1987-09-01 Publication of JPS6241164B2 publication Critical patent/JPS6241164B2/ja

Status Granted legal-status Critical Current

Links

BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims abstract description 66
229910000077 silane Inorganic materials 0.000 title claims abstract description 63
238000000746 purification Methods 0.000 title claims description 7
238000006243 chemical reaction Methods 0.000 title abstract description 31
239000007792 gaseous phase Substances 0.000 title abstract 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 23
239000012535 impurity Substances 0.000 claims abstract description 19
ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims abstract description 13
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 12
229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 12
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
238000002156 mixing Methods 0.000 claims abstract description 4
238000000034 method Methods 0.000 claims description 25
239000007789 gas Substances 0.000 claims description 16
238000011049 filling Methods 0.000 claims description 2
229910052710 silicon Inorganic materials 0.000 abstract description 14
239000010703 silicon Substances 0.000 abstract description 14
239000007787 solid Substances 0.000 abstract description 10
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
239000007788 liquid Substances 0.000 abstract description 5
229910052757 nitrogen Inorganic materials 0.000 abstract description 3
150000004756 silanes Chemical class 0.000 abstract description 2
239000004065 semiconductor Substances 0.000 description 17
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
239000001301 oxygen Substances 0.000 description 12
229910052760 oxygen Inorganic materials 0.000 description 12
230000006866 deterioration Effects 0.000 description 7
239000000758 substrate Substances 0.000 description 7
239000012071 phase Substances 0.000 description 6
229910052581 Si3N4 Inorganic materials 0.000 description 5
229910052739 hydrogen Inorganic materials 0.000 description 5
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
239000007795 chemical reaction product Substances 0.000 description 4
239000001257 hydrogen Substances 0.000 description 4
210000004185 liver Anatomy 0.000 description 4
238000000137 annealing Methods 0.000 description 3
125000004429 atom Chemical group 0.000 description 3
239000011248 coating agent Substances 0.000 description 3
238000000576 coating method Methods 0.000 description 3
238000007796 conventional method Methods 0.000 description 3
239000013078 crystal Substances 0.000 description 3
238000004519 manufacturing process Methods 0.000 description 3
239000000843 powder Substances 0.000 description 3
OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
229910021529 ammonia Inorganic materials 0.000 description 2
229910021417 amorphous silicon Inorganic materials 0.000 description 2
239000012159 carrier gas Substances 0.000 description 2
230000007423 decrease Effects 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000011521 glass Substances 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
239000013081 microcrystal Substances 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
238000001782 photodegradation Methods 0.000 description 2
239000000047 product Substances 0.000 description 2
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
239000012808 vapor phase Substances 0.000 description 2
229910004014 SiF4 Inorganic materials 0.000 description 1
-1 SiOx and SiO Chemical compound 0.000 description 1
238000002441 X-ray diffraction Methods 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
238000009835 boiling Methods 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
238000002716 delivery method Methods 0.000 description 1
230000005669 field effect Effects 0.000 description 1
238000004817 gas chromatography Methods 0.000 description 1
229910052736 halogen Inorganic materials 0.000 description 1
150000002367 halogens Chemical class 0.000 description 1
239000001307 helium Substances 0.000 description 1
229910052734 helium Inorganic materials 0.000 description 1
150000002431 hydrogen Chemical class 0.000 description 1
125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
230000001939 inductive effect Effects 0.000 description 1
239000012212 insulator Substances 0.000 description 1
238000011835 investigation Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
238000004949 mass spectrometry Methods 0.000 description 1
239000012528 membrane Substances 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
238000005121 nitriding Methods 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
239000002245 particle Substances 0.000 description 1
229920000548 poly(silane) polymer Polymers 0.000 description 1
238000011160 research Methods 0.000 description 1
150000003376 silicon Chemical class 0.000 description 1
XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 1
239000000126 substance Substances 0.000 description 1
238000012360 testing method Methods 0.000 description 1
239000002699 waste material Substances 0.000 description 1

Landscapes

Silicon Compounds (AREA)

JP3483683A 1983-03-03 1983-03-03 気相反応用シラン精製方法 Granted JPS59162119A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP3483683A JPS59162119A (ja)	1983-03-03	1983-03-03	気相反応用シラン精製方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP3483683A JPS59162119A (ja)	1983-03-03	1983-03-03	気相反応用シラン精製方法

Publications (2)

Publication Number	Publication Date
JPS59162119A true JPS59162119A (ja)	1984-09-13
JPS6241164B2 JPS6241164B2 (2)	1987-09-01

Family

ID=12425277

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP3483683A Granted JPS59162119A (ja)	1983-03-03	1983-03-03	気相反応用シラン精製方法

Country Status (1)

Country	Link
JP (1)	JPS59162119A (2)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59105804A (ja) *	1982-12-11	1984-06-19	Semiconductor Energy Lab Co Ltd	半導体用反応性気体精製方法

1983
- 1983-03-03 JP JP3483683A patent/JPS59162119A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59105804A (ja) *	1982-12-11	1984-06-19	Semiconductor Energy Lab Co Ltd	半導体用反応性気体精製方法

Also Published As

Publication number	Publication date
JPS6241164B2 (2)	1987-09-01

Publication	Publication Date	Title
Kim et al.	1994	Compositional and structural analysis of aluminum oxide films prepared by plasma-enhanced chemical vapor deposition
Dillon et al.	1992	Diethylsilane decomposition on silicon surfaces studied using transmission FTIR spectroscopy
Frenck et al.	1991	Deposition of TiO2 thin films by plasma-enhanced decomposition of tetraisopropyltitanate
JPH049369B2 (2)	1992-02-20
JP2003332333A (ja)	2003-11-21	絶縁膜の低温蒸着法
CN100557076C (zh)	2009-11-04	一种生长非晶态硅的方法及所得的非晶态硅薄膜
US20070218203A1 (en)	2007-09-20	Method and Equipment for Forming Oxide Film
JPH0732151B2 (ja)	1995-04-10	二酸化シリコン膜の低温化学蒸着
Haga et al.	1996	A structural interpretation of Si O Si vibrational absorption of high-photoconductive amorphous a-SiOx: H films
JP4044762B2 (ja)	2008-02-06	高純度・超微粉ＳｉＯｘ粉及びその製造方法
JP2007109984A (ja)	2007-04-26	酸化膜形成方法
Park et al.	1995	Effects of chlorine addition on the silicon dioxide properties deposited with remote plasma enhanced chemical vapor deposition at low temperatures
JPS59190209A (ja)	1984-10-29	シリコン被膜作製方法
JPS59162120A (ja)	1984-09-13	気相反応シラン精製方法
JPS6145706B2 (2)	1986-10-09
JPS6241164B2 (2)	1987-09-01
Dillon et al.	1993	Adsorption and decomposition of diethylgermane on porous silicon surfaces
JPS6027122A (ja)	1985-02-12	光プラズマ気相反応法
JPH0766196A (ja)	1995-03-10	二酸化シリコン膜の化学気相堆積方法
Wise et al.	1995	Adsorption and decomposition of diethyldiethoxysilane on silicon surfaces: New possibilities for SiO2 deposition
JPH0526324B2 (2)	1993-04-15
JPS60144940A (ja)	1985-07-31	酸化珪素作製方法
GB2058731A (en)	1981-04-15	Method of making semiconductor devices
JPS60190564A (ja)	1985-09-28	窒化珪素作製方法
JPS59164616A (ja)	1984-09-17	シラン精製方法