JPS59162200A - シリコン基板表面の清浄化法 - Google Patents

シリコン基板表面の清浄化法

Info

Publication number: JPS59162200A
Authority: JP; Japan
Prior art keywords: substrate; oxide film; remove; vacuum; cleaning
Prior art date: 1983-03-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP3376983A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6221756B2 (2

Inventor

Akitoshi Ishizaka

彰利石坂

Yasuhiro Shiraki

靖寛白木

Eiichi Maruyama

丸山　暎一

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

National Institute of Advanced Industrial Science and Technology AIST

Original Assignee

Agency of Industrial Science and Technology

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-03-03

Filing date

1983-03-03

Publication date

1984-09-13

1983-03-03 Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology

1983-03-03 Priority to JP3376983A priority Critical patent/JPS59162200A/ja

1984-09-13 Publication of JPS59162200A publication Critical patent/JPS59162200A/ja

1987-05-14 Publication of JPS6221756B2 publication Critical patent/JPS6221756B2/ja

Status Granted legal-status Critical Current

Links

239000000758 substrate Substances 0.000 title claims abstract description 56
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 7
229910052710 silicon Inorganic materials 0.000 title claims abstract description 7
239000010703 silicon Substances 0.000 title claims abstract description 7
238000004140 cleaning Methods 0.000 title claims description 13
238000000034 method Methods 0.000 claims abstract description 21
238000011282 treatment Methods 0.000 claims abstract description 17
239000000126 substance Substances 0.000 claims abstract description 15
229910052736 halogen Inorganic materials 0.000 claims abstract description 11
150000002367 halogens Chemical class 0.000 claims abstract description 11
238000010438 heat treatment Methods 0.000 claims abstract description 9
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract 2
229910017604 nitric acid Inorganic materials 0.000 claims abstract 2
238000009835 boiling Methods 0.000 claims description 10
238000007654 immersion Methods 0.000 claims description 3
230000003647 oxidation Effects 0.000 claims description 3
238000007254 oxidation reaction Methods 0.000 claims description 3
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 1
229910000040 hydrogen fluoride Inorganic materials 0.000 claims 1
239000013078 crystal Substances 0.000 abstract description 6
230000007547 defect Effects 0.000 abstract description 6
238000011109 contamination Methods 0.000 abstract description 4
239000012535 impurity Substances 0.000 abstract description 4
VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract description 3
235000011114 ammonium hydroxide Nutrition 0.000 abstract description 3
230000003247 decreasing effect Effects 0.000 abstract 1
239000010408 film Substances 0.000 description 26
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
239000000356 contaminant Substances 0.000 description 8
OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
239000000243 solution Substances 0.000 description 6
238000001179 sorption measurement Methods 0.000 description 6
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
230000000694 effects Effects 0.000 description 4
238000001704 evaporation Methods 0.000 description 4
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
238000007796 conventional method Methods 0.000 description 3
230000008020 evaporation Effects 0.000 description 3
150000001247 metal acetylides Chemical class 0.000 description 3
238000005406 washing Methods 0.000 description 3
WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 2
239000007864 aqueous solution Substances 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
229910052794 bromium Inorganic materials 0.000 description 2
238000005238 degreasing Methods 0.000 description 2
238000002003 electron diffraction Methods 0.000 description 2
239000003344 environmental pollutant Substances 0.000 description 2
238000000407 epitaxy Methods 0.000 description 2
239000007789 gas Substances 0.000 description 2
231100000719 pollutant Toxicity 0.000 description 2
238000004381 surface treatment Methods 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
241001474791 Proboscis Species 0.000 description 1
238000000137 annealing Methods 0.000 description 1
XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
-1 argon ions Chemical class 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
238000005090 crystal field Methods 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
238000009826 distribution Methods 0.000 description 1
238000010894 electron beam technology Methods 0.000 description 1
238000010849 ion bombardment Methods 0.000 description 1
239000007788 liquid Substances 0.000 description 1
238000001451 molecular beam epitaxy Methods 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
239000002245 particle Substances 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
239000010409 thin film Substances 0.000 description 1
UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
238000004506 ultrasonic cleaning Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

JP3376983A 1983-03-03 1983-03-03 シリコン基板表面の清浄化法 Granted JPS59162200A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP3376983A JPS59162200A (ja)	1983-03-03	1983-03-03	シリコン基板表面の清浄化法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP3376983A JPS59162200A (ja)	1983-03-03	1983-03-03	シリコン基板表面の清浄化法

Publications (2)

Publication Number	Publication Date
JPS59162200A true JPS59162200A (ja)	1984-09-13
JPS6221756B2 JPS6221756B2 (2)	1987-05-14

Family

ID=12395651

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP3376983A Granted JPS59162200A (ja)	1983-03-03	1983-03-03	シリコン基板表面の清浄化法

Country Status (1)

Country	Link
JP (1)	JPS59162200A (2)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH03201427A (ja) *	1989-12-28	1991-09-03	Nec Corp	半導体薄膜の形成方法
JPH03106737U (2) *	1990-02-20	1991-11-05
US5817174A (en) *	1995-12-15	1998-10-06	Kabushiki Kaisha Toshiba	Semiconductor substrate and method of treating semiconductor substrate
WO1999050895A1 (en) *	1998-03-27	1999-10-07	Super Silicon Crystal Research Institute Corp.	Method of manufacturing semiconductor wafer

1983
- 1983-03-03 JP JP3376983A patent/JPS59162200A/ja active Granted

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH03201427A (ja) *	1989-12-28	1991-09-03	Nec Corp	半導体薄膜の形成方法
JPH03106737U (2) *	1990-02-20	1991-11-05
US5817174A (en) *	1995-12-15	1998-10-06	Kabushiki Kaisha Toshiba	Semiconductor substrate and method of treating semiconductor substrate
US6010797A (en) *	1995-12-15	2000-01-04	Kabushiki Kaisha Toshiba	Semiconductor substrate and method of treating semiconductor substrate
WO1999050895A1 (en) *	1998-03-27	1999-10-07	Super Silicon Crystal Research Institute Corp.	Method of manufacturing semiconductor wafer
US6323140B1 (en)	1998-03-27	2001-11-27	Silicon Crystal Research Institute Corp.	Method of manufacturing semiconductor wafer

Also Published As

Publication number	Publication date
JPS6221756B2 (2)	1987-05-14

Publication	Publication Date	Title
JP3086719B2 (ja)	2000-09-11	表面処理方法
KR100220926B1 (ko)	1999-09-15	소수성 실리콘 웨이퍼의 세정방법
EP0536747B1 (en)	1997-05-07	Process for using halogenated carboxylic acid cleaning agents for fabricating integrated circuits
US5332444A (en)	1994-07-26	Gas phase cleaning agents for removing metal containing contaminants from integrated circuit assemblies and a process for using the same
JP3324455B2 (ja)	2002-09-17	珪素系半導体基板の清浄化方法
JPS61270830A (ja)	1986-12-01	表面清浄化方法
JPH0496226A (ja)	1992-03-27	半導体装置の製造方法
GB2376797A (en)	2002-12-24	Stable, oxide-free silicon surface preparation
JPH02260531A (ja)	1990-10-23	シリコン表面の処理方法
JP4325095B2 (ja)	2009-09-02	ＳｉＣ素子の製造方法
JPS6221756B2 (2)	1987-05-14
JP2595935B2 (ja)	1997-04-02	表面清浄化方法
US6323140B1 (en)	2001-11-27	Method of manufacturing semiconductor wafer
JP2558273B2 (ja)	1996-11-27	表面クリ−ニング方法
JP2970236B2 (ja)	1999-11-02	ＧａＡｓウェハ及びその製造方法
JPH07211688A (ja)	1995-08-11	化合物半導体基板の製造方法
JPS60147123A (ja)	1985-08-03	半導体装置の製造方法
Kim et al.	1997	Ex situ wafer surface cleaning by HF dipping for low temperature silicon epitaxy
JPH09190994A (ja)	1997-07-22	ケイ酸残留物の生成を防止のためのフッ酸処理後の脱イオン水／オゾン洗浄
JPS60152021A (ja)	1985-08-10	ニツケルシリサイド表面の汚染防止法
JPH0669087A (ja)	1994-03-11	シリコン基板の形成方法
JP2637950B2 (ja)	1997-08-06	表面清浄化方法
JPS63160324A (ja)	1988-07-04	分子線エピタキシヤル結晶成長方法
JPH06151304A (ja)	1994-05-31	化合物半導体ウェーハ
JPH0481857B2 (2)	1992-12-25