JPS59198741A - Lead frame member for semiconductor integrated circuit - Google Patents
Lead frame member for semiconductor integrated circuitInfo
- Publication number
- JPS59198741A JPS59198741A JP58072657A JP7265783A JPS59198741A JP S59198741 A JPS59198741 A JP S59198741A JP 58072657 A JP58072657 A JP 58072657A JP 7265783 A JP7265783 A JP 7265783A JP S59198741 A JPS59198741 A JP S59198741A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- thermal expansion
- chip
- coefficient
- break
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、半導体集積回路（ＩＣ）用□リードフレーム
材に関し、このリードフレーム材をＮ１２６〜３０％、
ｃｏ１１〜１６％、Ｍ ｎ ［１１〜０．８％、Ｓ ｉ
０．５％以下、Ｆｅ残部の組成の合金により構成する
ことにより、リードフレームのｉＸ％ Ｉｆｇ張率をＩ
Ｃのシリコンチップの熱膨張率に近づけ、サーマルスト
レスによるシリコンチップの破損を防止するようにした
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to lead frame material for semiconductor integrated circuits (IC), and the lead frame material is made of N126 to 30%,
co11-16%, M n [11-0.8%, Si
By constructing the alloy with a composition of 0.5% or less and the balance of Fe, the iX% Ifg elongation of the lead frame can be increased.
The coefficient of thermal expansion is close to that of the silicon chip shown in C, thereby preventing damage to the silicon chip due to thermal stress.
従来、このようなＩＣ用リードフレームに用いられる金
属材料としては、Ｎｉ３０％、Ｃ０１７％、Ｆ ｅ残ｇ
ＡＳよりなるコバールあるいはフエルニコと呼ばれるｐ
ｅ −Ｎ ｉ −Ｃｏ系合金が使用されている。Conventionally, the metal materials used for such IC lead frames include 30% Ni, 17% CO, and the remainder of Fe.
p called Kovar or Fuernico consisting of AS
An e-Ni-Co alloy is used.
しかしながら、このＦｅ−Ｎｔ−Ｃｏ系合金は、元来真
空管等のガラス封着用合金として開発されたもので、そ
の熱膨張率は５０〜５４Ｘ１０″″７九（６０〜４５０
℃）であり、ＩＣのシリコンチップのシリコンの熱膨張
率４２Ｘ１０−’／”Ｃとは大きな差がある。However, this Fe-Nt-Co alloy was originally developed as an alloy for glass sealing of vacuum tubes, etc., and its coefficient of thermal expansion is 50 to 54X10''79 (60 to 450
.degree. C.), which is significantly different from the thermal expansion coefficient of silicon in an IC silicon chip, which is 42.times.10-'/"C.
特に、近時集積度の高い大規模集ｆ１１回路（Ｉ、ＳＩ
）や超大規模集積回路（超ＬＳＩ）などの開発が盛んと
なって来ているが、このようなＬＳＩや超ＬＳＩではシ
リコンチップが大きくなり、がっ、発熱量も大きくなる
。したがって、シリコンチップとリードフレームとのＨ
に上述のような熱膨張率の大きな差があると、通電発熱
によるリードフレームの膨張、収縮により、シリコンチ
ップがサーマルストレスを受けて、割れたり、亀裂を生
じたりする恐れがある。このため、ＬＳＩや超ＬＳＩ用
のリードフレームにあっては、特にその熱膨張率をシリ
コンチップのそれに十分に近づける必要がある。In particular, recent high-integration large-scale integrated f11 circuits (I, SI
) and ultra-large-scale integrated circuits (ultra-LSI) are becoming more popular, but these LSIs and ultra-LSIs require larger silicon chips and generate more heat. Therefore, the H between the silicon chip and the lead frame is
If there is a large difference in the coefficient of thermal expansion as described above, the silicon chip may be subjected to thermal stress due to expansion and contraction of the lead frame due to heat generated by electricity, and there is a risk that it may break or crack. For this reason, lead frames for LSIs and VLSIs especially need to have a coefficient of thermal expansion sufficiently close to that of silicon chips.
この発明は上記事情に鑑みてなされたもので、シリコン
チップの熱膨張率に十分近い熱膨張率を有し、ＬＳＩ：
やｆｆ１ＬｓＩに用いてもサーマルストレスによって、
シリコンチップを破損することのないＩＣ用リードフレ
ーム材を提供することを目的とするものである。This invention was made in view of the above circumstances, and has a thermal expansion coefficient sufficiently close to that of a silicon chip, and an LSI:
Even if used for ff1LsI, due to thermal stress,
The object of the present invention is to provide an IC lead frame material that does not damage silicon chips.
Ｎ１２６〜３０％
Ｃ０１１〜１６％
Ｍ ｎ ０．１〜０．８ ％
ｐｅ 残 部
の組成または
Ｎ１２６〜３０％
ｃｏ １１〜１６％
Ｍ ｎ ０．１〜０．８ ％
Ｓｉ Ｏ，５％以 下
Ｆｅ残部
の組成を有するＦθ基合金からなるもめであり、プレス
加工等の加工を行ってリードフレームとされる。そして
、上記組成を有し、焼鈍および加工を経て得られたリー
ドフレームの熱膨張率は、３０〜４５０℃の温度範囲で
４０〜４８Ｘ１０−７／”Ｃとなり、ＩＣのシリコンチ
ップの熱膨張率４２×１０−’／’Ｃとの差が非常に微
かとなり、上述のようなサーマルストレスによるシリコ
ンチップの破損が効果的に防止される。N126-30% C011-16% Mn 0.1-0.8% pe Residual composition or N126-30% co 11-16% Mn 0.1-0.8% SiO, 5% or less It is made of an Fθ-based alloy with a composition of Fe balance, and is made into a lead frame by processing such as press working. The thermal expansion coefficient of the lead frame having the above composition and obtained through annealing and processing is 40 to 48X10-7/''C in the temperature range of 30 to 450°C, and the thermal expansion coefficient of the silicon chip of the IC is The difference from 42×10 −'/'C becomes very small, and damage to the silicon chip due to the above-mentioned thermal stress is effectively prevented.
なお、上述のようにリードフレームとしては、焼鈍、加
工を施されたのち使用されるので、これら処理後の熱膨
張率で比較、評価せねばならない。Incidentally, as described above, since the lead frame is used after being annealed and processed, it is necessary to compare and evaluate the coefficient of thermal expansion after these processes.
上記組成のＦｅ基合金中、ＮｉおよびＣＯはこの合金の
熱膨張率を左右するものである。第１図および第２図に
示したグラフはＮ１およびＣＯの含有量による熱膨張率
の変化を示したもので、第１図中ＡＭはＮ１２６％、Ｍ
ｎ ０．２７％、８１０．０９％と一定とし、ＣＯを
１０〜１７％の範囲で変化させたときの熱膨張率の変化
を示し、Ｂ線は、Ｎｉを３０％としたときの熱膨張率の
変化を示す。また、第２図中Ｃ線は００１６％、Ｍｎ０
．２７％、Ｓ ｉ ０．０９％と一定とし、Ｎ１を２５
〜５２％の範囲で変化させたときの熱膨張率の変化を、
Ｄ ｍＧ：ｆ Ｃｏ １１％としたときの熱膨張率の変
化を示す。ここに示した熱膨張率は、９０σＣ×１ｈｒ
の条件で焼鈍後、１１％の加工率で加工した厚み０．１
５ｍｍの板材について測定したものである０ｍ１１：ｊ
！Ｊのグラフから明らかなように、Ｎ１が２６〜３０％
であるときにはＣｏを１１％から１６％にまで変化させ
ると熱膨張率はこの範囲で極小となり、かつ４０〜４８
Ｘ １０”−７／℃の許容範囲内に収まる。また、第
２図のグラフから明らかなように、ｃｏが１１〜１６％
であるときにはＮ１を２６％から６０％まで変化させる
と、ＭｆｆｊＥ張係数は、やはりこの範囲で極小となり
、４０〜４８Ｘ１０−’／’Ｃの許容範囲に収まる。In the Fe-based alloy having the above composition, Ni and CO influence the coefficient of thermal expansion of this alloy. The graphs shown in Figures 1 and 2 show changes in the coefficient of thermal expansion depending on the content of N1 and CO. In Figure 1, AM is N126%, M
n is constant at 0.27% and 810.09%, and shows the change in the coefficient of thermal expansion when CO is varied in the range of 10 to 17%. Line B shows the thermal expansion when Ni is set to 30%. Shows the change in rate. In addition, the C line in Fig. 2 is 0016%, Mn0
．． 27%, S i 0.09%, and N1 is 25%.
The change in thermal expansion coefficient when changed in the range of ~52%,
D mG: shows the change in thermal expansion coefficient when fCo is 11%. The thermal expansion coefficient shown here is 90σC×1hr
After annealing under the following conditions, the thickness was 0.1 processed at a processing rate of 11%.
0m11:j measured on a 5mm plate material
! As is clear from the graph of J, N1 is 26-30%
When Co is changed from 11% to 16%, the thermal expansion coefficient becomes minimum in this range, and 40 to 48%.
It falls within the permissible range of
When N1 is changed from 26% to 60%, the MffjE tensile coefficient becomes minimum within this range, and falls within the allowable range of 40 to 48X10-'/'C.
また、Ｓｌは脱酔剤として’＜ｉ ｎ’Ｆ’ Ｌ 、０
．５％をメ代えると合金を脆化させて不都合となる。In addition, Sl is used as a de-anesthetic agent '<i n'F' L , 0
．． If the content is changed by 5%, the alloy will become brittle, which is disadvantageous.
さらに、Ｍｎは鍛造性を向上させるとともに脱酸側とし
て働き、０．１％未満では上に己効果が十分に得られず
、０８％を越えると介在物が多く、合金の清浄度が低く
なり折り曲げ性が悪化し不部会を来す。Furthermore, Mn improves forgeability and acts as a deoxidizing agent, and if it is less than 0.1%, the above effect cannot be obtained sufficiently, and if it exceeds 0.8%, there will be many inclusions and the cleanliness of the alloy will be low. The bendability deteriorates, resulting in unfinished parts.
以下、実施例を示して具体的に説明する。Hereinafter, a specific explanation will be given by showing examples.
Ｔ４１表に示す■〜■の配合組成の合金塊がら厚みα１
５，１．の板材を熱間圧％して得、これを９０σＣ１時
ＩＩＩ煉鈍し、さらに１０％の加工率でプレス加工して
リー ドフシームを得た。このリードフレームの熱膨張
率およびプレス加工を行うまえの板材の熱膨張率を３０
〜４５０°Ｃの温度範囲で測定した。結果を第１表に併
せて示した。Thickness α1 of alloy ingots with compounding compositions from ■ to ■ shown in T41 table
5,1. This was obtained by subjecting a plate material of 1% to hot pressure, which was then subjected to 90σC 1 hour III refining, and further pressed at a processing rate of 10% to obtain a lead seam. The coefficient of thermal expansion of this lead frame and the coefficient of thermal expansion of the plate material before pressing are 30
Measurements were made over a temperature range of ~450°C. The results are also shown in Table 1.
第 １ 表
第１表から明らかなように、５■〜■の合金から得られ
たリードフレームＣま、いずれもシリコンチップの熱膨
張率４２Ｘ１０−’／’Ｃに極めて近い熱 ４゜膨張率
を有していることがわかる。したがって、このようなリ
ードフレームを用いれば、シリコンチップをサーマルス
トレスで破損することは皆無となる。Table 1 As is clear from Table 1, lead frames C obtained from alloys 5■ to ■ all have thermal expansion coefficients of 4°C that are extremely close to the coefficient of thermal expansion of silicon chips, 42X10-'/'C. It can be seen that it has. Therefore, if such a lead frame is used, the silicon chip will never be damaged by thermal stress.
以上説明したように、この発明のＩＣ用ＩＪ−ドフシー
ム材は、Ｎ１２６〜３０％、（：’ｏ１１〜１６％、Ｍ
ｎ ０．１−０．８ ％、Ｆｅ残部またはＮ１２６〜
′５０％、Ｃｏ１１−１６％、Ｍ ｎ Ｏ，１−０，８
％、Ｓｉ ０．５％以下、Ｆｅ残部の組成を有するもの
であるので、これより得られるり−Ｖフレシーの熱膨張
率は４０〜４８Ｘ１０／”（となり、ＩＣのシリコンチ
ップの熱膨張率４２ Ｘ １ ａ−７／”ｃ−Ｃ，Ｊｒ
ｆｉめて近いものとなる。したがって、これから得られ
るリードフレームを用いれば、ＩＣのシリコンチップと
リードフレームとのＩＨＪの熱伸（ｆｉｔ 、ｆｔ（の
差カ極めて微少となり、チップ寸法が大きくかつ発熱量
も多く、シリコンチップの破損の可能性の高いＬＳＩや
超ＬＳＩにあっても、シリコンチップが破損することは
皆無となる。As explained above, the IJ-doff seam material for IC of the present invention has N126 to 30%, (:'o11 to 16%, M
n 0.1-0.8%, Fe balance or N126~
'50%, Co11-16%, MnO,1-0,8
%, Si 0.5% or less, and the balance of Fe, the thermal expansion coefficient of the -V Frecy obtained from this is 40 to 48 x 10/'' (which is equivalent to the thermal expansion coefficient of the silicon chip of an IC, 42 X 1 a-7/”c-C, Jr.
It will be the closest thing ever. Therefore, if the lead frame obtained from this is used, the difference in thermal expansion (fit, ft) of IHJ between the IC silicon chip and the lead frame will be extremely small, and the chip size will be large and the amount of heat generated will be large, resulting in damage to the silicon chip. Even in LSIs and super LSIs where there is a high possibility of damage, there will be no chance of silicon chips being damaged.
第１図は、ＣＯ含有ｉｔの変化に伴う熱膨張率の変化を
示すグラフ、
第２１菌は、Ｎ１含有量の変化に伴う熱膨張率の変化を
示すグラフである。
手続補正書岨発）
１． 事件の表示
昭和５８ 年特許願第７２６５７号
２、発明の名称
半導体集積回路用リードフレーム材
３、 補正をする者
特許出願人
（り０７）日本楽器製造株式会社
４、代理人
東京都中央区八重洲２丁目１番５号 東京駅前ビル６階
ｆｉ＋ 明細害第乙頁第１ｔｌ〜２０行目の「第１表
に示す■〜■の・・・・・・で測定した。」を「第１表
に示す■〜■の配合組成の合金塊から厚み０１５Ｍの板
材を最終加工率１０％の圧延をして得たーこの板材の川
伝ｎロエ後の熱膨張率およびｑＯθ”ＣＸ／Ｘ／時素水
素中鈍したものの熱膨張率を３０〜ｔｒｔ−ｓ。
°Ｃの温度範囲で測定した。」に訂正でる。
Ｃ２＋ 図面第ｔ（支）を別紙の通り訂正する。FIG. 1 is a graph showing changes in the coefficient of thermal expansion as a result of changes in the CO content. Bacterium No. 21 is a graph showing changes in the coefficient of thermal expansion as the N1 content changes. Procedural amendments issued by Qian) 1. Description of the case 1982 Patent Application No. 72657 2 Name of the invention Lead frame material for semiconductor integrated circuits 3 Person making the amendment Patent applicant (RI07) Nippon Gakki Mfg. Co., Ltd. 4 Agent Yaesu, Chuo-ku, Tokyo 2-1-5 Tokyo Ekimae Building 6th floor fi+ Detailed Damage No. 2, page 2, lines 1tl to 20, "Measured according to ■...■ shown in Table 1." is changed to "Table 1. A plate material with a thickness of 015M was obtained by rolling at a final processing rate of 10% from an alloy ingot having the composition shown in The coefficient of thermal expansion when annealed in hydrogen is 30 to trt-s. Measurements were made in the temperature range of °C. ” has been corrected. C2+ Drawing number t (branch) is corrected as shown in the attached sheet.
Claims (1)
ｏ １１〜１６％ Ｍｎ０．１〜α８％ Ｆｅ残部 の組成を有する半導体集積回路用リードフレーム材。 （ｓ＋ｌ’Ｎ１２６〜５０％ ００１１〜１６％ Ｍｉｌｌ ０．１〜０．８％ Ｓｉ０．５％以下 Ｆｅ残部 の組成を有する半導体集積回路用リードフレーム材。[Claims] <11 N1 26 to 50% (weight %, same below) c
A lead frame material for semiconductor integrated circuits having a composition of o 11-16% Mn 0.1-α 8% and the balance Fe. (s+l'N126-50% 0011-16% Mill 0.1-0.8% Si 0.5% or less Fe balance lead frame material for semiconductor integrated circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58072657A JPS59198741A (en) | 1983-04-25 | 1983-04-25 | Lead frame member for semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58072657A JPS59198741A (en) | 1983-04-25 | 1983-04-25 | Lead frame member for semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59198741A true JPS59198741A (en) | 1984-11-10 |
| JPS64817B2 JPS64817B2 (en) | 1989-01-09 |
Family
ID=13495662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58072657A Granted JPS59198741A (en) | 1983-04-25 | 1983-04-25 | Lead frame member for semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59198741A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61235535A (en) * | 1985-04-10 | 1986-10-20 | Hitachi Metals Ltd | Alloy for lead frame |
| JPS6232631A (en) * | 1985-08-05 | 1987-02-12 | Hitachi Ltd | Integrated circuit package |
| US4869758A (en) * | 1987-05-26 | 1989-09-26 | Nippon Steel Corporation | Iron/copper/chromium alloy material for high-strength lead frame or pin grid array |
| US4936925A (en) * | 1985-07-26 | 1990-06-26 | Yamaha Corporation | Method for producing alloy of low thermal expansion |
| US5026435A (en) * | 1989-06-26 | 1991-06-25 | Hitachi Metals, Ltd. | High strength lead frame material and method of producing the same |
| US5147470A (en) * | 1990-12-25 | 1992-09-15 | Hitachi Metals, Ltd. | High strength lead frame material and method of producing the same |
| JPH05139857A (en) * | 1991-11-14 | 1993-06-08 | Ngk Spark Plug Co Ltd | Ceramics substrate and metal joint |
| JPH09172108A (en) * | 1996-12-24 | 1997-06-30 | Toshiba Corp | Aluminum nitride circuit board |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7519966B2 (en) | 2021-08-23 | 2024-07-22 | オークマ株式会社 | Calibration method and calibration program for contact-type tool sensor in machine tool, machine tool |
| KR102762042B1 (en) * | 2022-11-11 | 2025-02-04 | 에스케이 주식회사 | system and method for matter removal in gas production facility |
-
1983
- 1983-04-25 JP JP58072657A patent/JPS59198741A/en active Granted
Non-Patent Citations (1)
| Title |
|---|
| ASTM STANDARD=1978 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61235535A (en) * | 1985-04-10 | 1986-10-20 | Hitachi Metals Ltd | Alloy for lead frame |
| US4936925A (en) * | 1985-07-26 | 1990-06-26 | Yamaha Corporation | Method for producing alloy of low thermal expansion |
| JPS6232631A (en) * | 1985-08-05 | 1987-02-12 | Hitachi Ltd | Integrated circuit package |
| US4869758A (en) * | 1987-05-26 | 1989-09-26 | Nippon Steel Corporation | Iron/copper/chromium alloy material for high-strength lead frame or pin grid array |
| US5026435A (en) * | 1989-06-26 | 1991-06-25 | Hitachi Metals, Ltd. | High strength lead frame material and method of producing the same |
| US5147470A (en) * | 1990-12-25 | 1992-09-15 | Hitachi Metals, Ltd. | High strength lead frame material and method of producing the same |
| JPH05139857A (en) * | 1991-11-14 | 1993-06-08 | Ngk Spark Plug Co Ltd | Ceramics substrate and metal joint |
| JPH09172108A (en) * | 1996-12-24 | 1997-06-30 | Toshiba Corp | Aluminum nitride circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS64817B2 (en) | 1989-01-09 |
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