JPS5922576U - solid-state image sensor - Google Patents
solid-state image sensorInfo
- Publication number
- JPS5922576U JPS5922576U JP1982117049U JP11704982U JPS5922576U JP S5922576 U JPS5922576 U JP S5922576U JP 1982117049 U JP1982117049 U JP 1982117049U JP 11704982 U JP11704982 U JP 11704982U JP S5922576 U JPS5922576 U JP S5922576U
- Authority
- JP
- Japan
- Prior art keywords
- register
- solid
- state image
- section
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図及び第2図はこの考案を説明するための図、第3
図はこの考案の実施例を全体として示す図、第4図は第
3図の水平読出しレジスタ14のバルクチャンネルの電
位を示す図、第5図及び第6図はこの実施例の製造工程
を示す断面図である。
11はイメージ部、12は垂直レジスタ、14は水平読
出しレジスタ、17tはトランスファ部、173はスト
レージ部である。Figures 1 and 2 are diagrams for explaining this invention, Figure 3
The figure shows an embodiment of this invention as a whole, FIG. 4 shows the potential of the bulk channel of the horizontal readout register 14 of FIG. 3, and FIGS. 5 and 6 show the manufacturing process of this embodiment. FIG. 11 is an image section, 12 is a vertical register, 14 is a horizontal read register, 17t is a transfer section, and 173 is a storage section.
Claims (1)
スタを複数個並行するように設け、バルクチャンネル型
の電荷結合素子からなる第2のレジスタに上記第1のレ
ジスタの転送終端を結合し、受光部からの電荷を順次上
記第1のレジスタおよび第2のレジスタを介して転送し
て読み出すようにした固体撮像素子において、上記第2
のレジスタのストレージ部およびトランスファ部の間の
電゛位差を上記第1のレジスタのストレージ部および゛
トランスファ部の間の電位差より小さくしたこ
とを特徴とする固体撮像素子。A plurality of first registers each consisting of a bulk channel type charge coupled device are provided in parallel, and a transfer terminal of the first register is coupled to a second register consisting of a bulk channel type charge coupled device, and a light receiving section is formed. In the solid-state image sensing device, the charge from the second register is sequentially transferred and read out through the first register and the second register.
A solid-state imaging device characterized in that a potential difference between the storage section and the transfer section of the first register is smaller than a potential difference between the storage section and the transfer section of the first register.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982117049U JPS5922576U (en) | 1982-07-30 | 1982-07-30 | solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982117049U JPS5922576U (en) | 1982-07-30 | 1982-07-30 | solid-state image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5922576U true JPS5922576U (en) | 1984-02-10 |
| JPS6345097Y2 JPS6345097Y2 (en) | 1988-11-22 |
Family
ID=30269591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1982117049U Granted JPS5922576U (en) | 1982-07-30 | 1982-07-30 | solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5922576U (en) |
-
1982
- 1982-07-30 JP JP1982117049U patent/JPS5922576U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6345097Y2 (en) | 1988-11-22 |
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