JPS5987155U - solid-state image sensor - Google Patents
solid-state image sensorInfo
- Publication number
- JPS5987155U JPS5987155U JP18269682U JP18269682U JPS5987155U JP S5987155 U JPS5987155 U JP S5987155U JP 18269682 U JP18269682 U JP 18269682U JP 18269682 U JP18269682 U JP 18269682U JP S5987155 U JPS5987155 U JP S5987155U
- Authority
- JP
- Japan
- Prior art keywords
- solid
- region
- channel stop
- state image
- stop region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来例を示す平面図、第2図は第1図の従来例
を説明するための図、第3図は他の従来例を示す断面図
、第4図は更に他の従来例を示す断面図、第5図は第4
図の従来例を説明するための図、第6図はこの考案の一
実施例を示す断面図である。
31はN形シリコン基体、32はP影領域、34はセン
サ部、35は垂直レジスタ、37はチャンネルストッパ
をなすP十形領域、40は欠如部である。Fig. 1 is a plan view showing a conventional example, Fig. 2 is a diagram for explaining the conventional example shown in Fig. 1, Fig. 3 is a cross-sectional view showing another conventional example, and Fig. 4 is yet another conventional example. 5 is a sectional view showing the 4th
FIG. 6 is a cross-sectional view showing an embodiment of this invention. 31 is an N-type silicon substrate, 32 is a P shadow region, 34 is a sensor section, 35 is a vertical register, 37 is a P-shaped region forming a channel stopper, and 40 is a missing portion.
Claims (1)
記充電変換素子に蓄積された信号キャリアを読出す手段
と、上記各光電変換素子を夫々分離′するチャンネルス
トップ領域とからなる固体撮像、 素子におい
て、上記充電変換素子の深部に、上記チャンネルストッ
プ領域と連接し且つ該領域と同導電型の領域を設け、該
領域のほぼ中央に微小な欠除部を設け、上記欠除部を通
して過剰な信号型−荷を流子ようにしてなることを特徴
とする固体撮像素子。A solid-state imaging device comprising a plurality of photoelectric conversion elements formed on a semiconductor substrate, a means for reading signal carriers accumulated in the charge conversion element, and a channel stop region that separates each of the photoelectric conversion elements, respectively. In the element, a region is provided deep in the charge conversion element, which is connected to the channel stop region and has the same conductivity type as the channel stop region, and a minute cutout is provided approximately in the center of the region, and an excessive amount is passed through the cutout. A solid-state image pickup device characterized by a signal-type load being formed like a stream.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18269682U JPS5987155U (en) | 1982-12-02 | 1982-12-02 | solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18269682U JPS5987155U (en) | 1982-12-02 | 1982-12-02 | solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5987155U true JPS5987155U (en) | 1984-06-13 |
Family
ID=30395583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18269682U Pending JPS5987155U (en) | 1982-12-02 | 1982-12-02 | solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5987155U (en) |
-
1982
- 1982-12-02 JP JP18269682U patent/JPS5987155U/en active Pending
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