JPS5925274A - 半導体装置作製方法 - Google Patents

半導体装置作製方法

Info

Publication number
JPS5925274A
JPS5925274A JP58125719A JP12571983A JPS5925274A JP S5925274 A JPS5925274 A JP S5925274A JP 58125719 A JP58125719 A JP 58125719A JP 12571983 A JP12571983 A JP 12571983A JP S5925274 A JPS5925274 A JP S5925274A
Authority
JP
Japan
Prior art keywords
region
type
electrode
semiconductor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58125719A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0433141B2 (da
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58125719A priority Critical patent/JPS5925274A/ja
Publication of JPS5925274A publication Critical patent/JPS5925274A/ja
Publication of JPH0433141B2 publication Critical patent/JPH0433141B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
JP58125719A 1983-07-11 1983-07-11 半導体装置作製方法 Granted JPS5925274A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58125719A JPS5925274A (ja) 1983-07-11 1983-07-11 半導体装置作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58125719A JPS5925274A (ja) 1983-07-11 1983-07-11 半導体装置作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55141316A Division JPS5764965A (en) 1980-10-08 1980-10-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5925274A true JPS5925274A (ja) 1984-02-09
JPH0433141B2 JPH0433141B2 (da) 1992-06-02

Family

ID=14917058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58125719A Granted JPS5925274A (ja) 1983-07-11 1983-07-11 半導体装置作製方法

Country Status (1)

Country Link
JP (1) JPS5925274A (da)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764965A (en) * 1980-10-08 1982-04-20 Semiconductor Energy Lab Co Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764965A (en) * 1980-10-08 1982-04-20 Semiconductor Energy Lab Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH0433141B2 (da) 1992-06-02

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