JPS593542U - 半導体真空処理装置のゲ−ト弁 - Google Patents

半導体真空処理装置のゲ−ト弁

Info

Publication number
JPS593542U
JPS593542U JP1982098870U JP9887082U JPS593542U JP S593542 U JPS593542 U JP S593542U JP 1982098870 U JP1982098870 U JP 1982098870U JP 9887082 U JP9887082 U JP 9887082U JP S593542 U JPS593542 U JP S593542U
Authority
JP
Japan
Prior art keywords
gate valve
vacuum processing
processing equipment
semiconductor
semiconductor vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1982098870U
Other languages
English (en)
Other versions
JPS6317253Y2 (ja
Inventor
長島 正泰
雅史 鈴木
力也 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1982098870U priority Critical patent/JPS593542U/ja
Publication of JPS593542U publication Critical patent/JPS593542U/ja
Application granted granted Critical
Publication of JPS6317253Y2 publication Critical patent/JPS6317253Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第1図はスパッタ装置の構成図、第2図と第3図は本考
案に係るゲート弁の断面図で第2図は閉鎖状態また第3
図は開口状態を示すものである。 図において、9はゲート弁、10はゲート弁保持部、1
1は可動弁体、12は導入部、14はウェハ、16.1
7はベルト、19はアイドラ、20はスリット。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体の被処理基板に対し真空の下でインライン方式に
    より集積回路を形成する真空処理装置において、真空度
    の異る各空間を仕切るゲート弁の可動弁体に半導体の被
    処理基板を案内する回転機構又は摺動保持機構を設けて
    なることを特徴とする半導体真空処理装置のゲート弁。
JP1982098870U 1982-06-30 1982-06-30 半導体真空処理装置のゲ−ト弁 Granted JPS593542U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1982098870U JPS593542U (ja) 1982-06-30 1982-06-30 半導体真空処理装置のゲ−ト弁

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1982098870U JPS593542U (ja) 1982-06-30 1982-06-30 半導体真空処理装置のゲ−ト弁

Publications (2)

Publication Number Publication Date
JPS593542U true JPS593542U (ja) 1984-01-11
JPS6317253Y2 JPS6317253Y2 (ja) 1988-05-16

Family

ID=30234552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1982098870U Granted JPS593542U (ja) 1982-06-30 1982-06-30 半導体真空処理装置のゲ−ト弁

Country Status (1)

Country Link
JP (1) JPS593542U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008075135A (ja) * 2006-09-21 2008-04-03 Nippon Dempa Kogyo Co Ltd 真空処理装置および大気開放方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169345A (en) * 1980-04-30 1981-12-26 Ibm Rotary device for pneumatic track

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169345A (en) * 1980-04-30 1981-12-26 Ibm Rotary device for pneumatic track

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008075135A (ja) * 2006-09-21 2008-04-03 Nippon Dempa Kogyo Co Ltd 真空処理装置および大気開放方法

Also Published As

Publication number Publication date
JPS6317253Y2 (ja) 1988-05-16

Similar Documents

Publication Publication Date Title
JPS5936262U (ja) 半導体メモリ素子
JPS6117742U (ja) 半導体製造装置
JPS603734U (ja) 半導体基板の搬送装置
JPS6122531U (ja) 真空処理装置
JPS6072211U (ja) 半導体ウエハのスクライブ装置
JPS5965536U (ja) ウエハ搬出装置
JPS5933240U (ja) 遠心乾燥機
JPS59173334U (ja) 半導体ウエハ搬送装置
JPS5924770U (ja) 真空装置用冷却パツド
JPS6130242U (ja) ウエハ搬送装置
JPS58161906U (ja) 薄板ワ−ク移送用シユ−ト
JPS6142860U (ja) 相補型mos半導体装置
JPS6032363U (ja) インライン式スパツタリング装置
JPS60927U (ja) 半導体ウエハ貼付装置
JPS5853149U (ja) ウエハ搬送装置
JPS5918447U (ja) アモルフアスシリコン電界効果型トランジスタ
JPS5823810U (ja) 半導体ウエ−ハの搬送機構
JPS6130233U (ja) 真空処理装置
JPS58111940U (ja) Icチツプ用コレツトチヤツク
JPS5866351U (ja) 半導体ガスセンサ−
JPS6011095U (ja) Xyステ−ジ
JPS5887348U (ja) 帯電防止処理を施した半導体デイバイス
JPS58191945U (ja) 鉄板の酸化皮膜除去装置
JPS59156763U (ja) 半導体装置用ピンセツト
JPS59111042U (ja) 半導体製造装置