JPS5952835A - プラズマ気相反応装置 - Google Patents

プラズマ気相反応装置

Info

Publication number
JPS5952835A
JPS5952835A JP57163730A JP16373082A JPS5952835A JP S5952835 A JPS5952835 A JP S5952835A JP 57163730 A JP57163730 A JP 57163730A JP 16373082 A JP16373082 A JP 16373082A JP S5952835 A JPS5952835 A JP S5952835A
Authority
JP
Japan
Prior art keywords
reaction
substrate
reaction vessel
semiconductor layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57163730A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0436449B2 (sr
Inventor
Shunpei Yamazaki
山崎　「しゆん」平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57163730A priority Critical patent/JPS5952835A/ja
Publication of JPS5952835A publication Critical patent/JPS5952835A/ja
Publication of JPH0436449B2 publication Critical patent/JPH0436449B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP57163730A 1982-09-20 1982-09-20 プラズマ気相反応装置 Granted JPS5952835A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57163730A JPS5952835A (ja) 1982-09-20 1982-09-20 プラズマ気相反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57163730A JPS5952835A (ja) 1982-09-20 1982-09-20 プラズマ気相反応装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63292203A Division JPH01157520A (ja) 1988-11-18 1988-11-18 プラズマ気相反応方法

Publications (2)

Publication Number Publication Date
JPS5952835A true JPS5952835A (ja) 1984-03-27
JPH0436449B2 JPH0436449B2 (sr) 1992-06-16

Family

ID=15779570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57163730A Granted JPS5952835A (ja) 1982-09-20 1982-09-20 プラズマ気相反応装置

Country Status (1)

Country Link
JP (1) JPS5952835A (sr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60111419A (ja) * 1983-10-27 1985-06-17 ア−ルシ−エ−　コ−ポレ−ション グロー放電の陽光柱内のガスから無定形半導体材料層を被着する方法
US4680451A (en) * 1985-07-29 1987-07-14 A. G. Associates Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5143718U (sr) * 1974-09-27 1976-03-31
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5143718U (sr) * 1974-09-27 1976-03-31
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60111419A (ja) * 1983-10-27 1985-06-17 ア−ルシ−エ−　コ−ポレ−ション グロー放電の陽光柱内のガスから無定形半導体材料層を被着する方法
US4680451A (en) * 1985-07-29 1987-07-14 A. G. Associates Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers

Also Published As

Publication number Publication date
JPH0436449B2 (sr) 1992-06-16

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