JPS596175B2 - Method for rapidly cooling an object after heating using an arch-image furnace - Google Patents

Method for rapidly cooling an object after heating using an arch-image furnace

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Publication number
JPS596175B2
JPS596175B2 JP55164779A JP16477980A JPS596175B2 JP S596175 B2 JPS596175 B2 JP S596175B2 JP 55164779 A JP55164779 A JP 55164779A JP 16477980 A JP16477980 A JP 16477980A JP S596175 B2 JPS596175 B2 JP S596175B2
Authority
JP
Japan
Prior art keywords
heating
water
cooled copper
image furnace
dome
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55164779A
Other languages
Japanese (ja)
Other versions
JPS5787831A (en
Inventor
昌弘 吉村
重行 宗宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP55164779A priority Critical patent/JPS596175B2/en
Publication of JPS5787831A publication Critical patent/JPS5787831A/en
Publication of JPS596175B2 publication Critical patent/JPS596175B2/en
Expired legal-status Critical Current

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  • Physical Or Chemical Processes And Apparatus (AREA)

Description

【発明の詳細な説明】 最近の飛躍しつゝある技術革新の過程においては非晶質
の無機物質即ち非晶質の金属、合金、非金属無機物質、
或は此等の非晶質の複合材料の出現に負うところが大で
ある。
[Detailed Description of the Invention] In the process of recent rapid technological innovation, amorphous inorganic substances, namely amorphous metals, alloys, non-metallic inorganic substances,
This is largely due to the emergence of such amorphous composite materials.

而して此等の非晶質材料即ちアモルファスの進歩は専ら
その製造の段階における加熱と急冷の技術の発展による
ものである。しかるに此の分野における従来技術は大別
して3種類存在した。即ちに泪的物をルツボに入れプラ
ズマアークにより加熱することとドラムの内壁を利用し
た遠心急令法又はガス銃又はピストンアンビル又は1〜
2個のロールの外面等による急冷法を組み合わせた方法
、(口泪的物をルツボに入れたもののハロゲンランプに
よる加熱と前記に)の方法中の急冷方法を組み合わせた
方法、f(→高周波誘導加熱と前言酎)(:における急
冷方法とを組合わせた方法等があつた。しかしながら(
イ)の方法はその加熱の手段としてのプラズマアークは
不安定なので電極に炭素を加えるが、そのためにアーク
から発生した微粒の塵埃が反射鏡に付着するので光熱線
の反射率が悪くなりイメージが高温を保持し難いことに
加えて高温でルツボと反応するような目的物には使用で
きない。
The progress of these amorphous materials is due solely to the development of heating and rapid cooling techniques during their production. However, there are three types of conventional techniques in this field. That is, placing the crying object in a crucible and heating it with a plasma arc, a centrifugal express method using the inner wall of a drum, a gas gun, a piston anvil, or 1.
A method that combines the quenching method using the outer surface of two rolls, etc., a method that combines the quenching method of the above method (heating the object placed in the crucible with a halogen lamp), f (→ high frequency induction) There was a method that combined heating and the rapid cooling method in (). However, (
In method (a), since the plasma arc used as a means of heating is unstable, carbon is added to the electrode, but because of this, fine particles of dust generated from the arc adhere to the reflector, which deteriorates the reflectance of the heat rays and distorts the image. In addition to being difficult to maintain high temperatures, it cannot be used for objects that react with crucibles at high temperatures.

その上従来のルツボのノズルからの目的溶融物の排出は
それ程高速には行われ得ず、また加熱湯所と冷却場所が
或程度離れざるを得ないから、種々の物質を非晶質とす
るためにはその冷却速度は不充分である、等々多くの欠
点を有していた。また(口)の方法ではハロゲンランプ
による加熱は安定しているのであるがハロゲン中の発行
は比較的低温なのでイメージも比較的高温にはなりにく
く約1、800℃止りであるからAl2O3或は3Al
203・ 2Si02等の高融点の物質については溶融
することができない。またその他に)の方法と同様の多
くの欠点を有する。また←→の方法では安定した高温は
得られるが、導電性のない目的物については必ず目的物
を入れる容器或はルツボを必要とするので、ルツボと反
応するような目的物には使用できない。またルツボを使
用するため加熱湯所と冷却場所が離れているので冷却速
度はあまり上らない等々の諸欠点があつた。従つて従来
の方法ではルツボを使用するため目的物との反応を防止
し得ない場合が多くまた一般に1、800℃以上の高融
点物質からアモルファスを製造することはできなかつた
。本発明者等は従来技術では得ることのできなかつた此
等高融点物質のアモルファスを製造することを目的とし
て種々研究を重ねた結果、従来の方法によつてはなし得
なかつた高融点物質を含む目的物の加熱溶融と超急冷方
法との組み合わせにより本発明を完成したものである。
Furthermore, the desired molten material cannot be discharged from the nozzle of a conventional crucible at such a high speed, and the heating and cooling locations must be separated to some extent, making it difficult to make various materials amorphous. It has many drawbacks, such as an insufficient cooling rate. In addition, in the method (mentioned), heating with a halogen lamp is stable, but since the heat in the halogen is relatively low temperature, the image does not reach a relatively high temperature (only about 1,800℃), so Al2O3 or 3Al
High melting point substances such as 203.2Si02 cannot be melted. In addition, it has many drawbacks similar to the methods described above. In addition, although a stable high temperature can be obtained with the method ←→, it cannot be used for objects that will react with a crucible because it always requires a container or crucible to contain the object without conductivity. In addition, since the crucible was used, the heating and cooling locations were separated, so the cooling rate was not very high. Therefore, in the conventional method, since a crucible is used, it is often impossible to prevent reaction with the target substance, and it is generally not possible to produce amorphous from a substance with a high melting point of 1,800° C. or higher. The present inventors have conducted various studies with the aim of producing amorphous materials with high melting points that could not be obtained using conventional methods. The present invention was completed by combining heating and melting of the target object with an ultra-rapid cooling method.

即ち希ガスランプ、例えばキセノンランプを横置した受
光鏡の第一焦点に備え第二焦点の外側に平面反射鏡を約
45焦上方に向けて設けその真上に下向きに放射鏡を設
けたアークイメージ炉を用い該放射鏡の結像位置に石英
ガラスドームを置く方法である。
In other words, a rare gas lamp, such as a xenon lamp, is placed horizontally at the first focal point of a light receiving mirror, and a flat reflecting mirror is placed outside the second focal point with the plane facing upward at about 45 points, and an emitting mirror is placed directly above the reflecting mirror facing downward. This method uses an image furnace and places a quartz glass dome at the imaging position of the radiation mirror.

該石英ガラスドームの底部には予じめ目的物を載せた水
冷銅基板を気密に嵌着する。該水冷銅基盤は横断面は円
形で縦断面の上側は上方に凹の大きな半径の円弧で下側
は直線となるように形成したもので石英ドームとの嵌着
は耐熱性パツキンを用いたボルト締め或はねじ締め等の
構造とし、かつ石英ドーム内に高圧ガスを導入するため
の導入口を設け配管する。石英ドャ内には目ため、圧力
は目的物の性質で異るが、不活性ガス等を封入する。
A water-cooled copper substrate, on which a target object has been placed in advance, is hermetically fitted to the bottom of the quartz glass dome. The water-cooled copper base has a circular cross section, an upward concave arc with a large radius on the upper side, and a straight line on the lower side, and is attached to the quartz dome using bolts using heat-resistant packing. The structure is tightened or screwed, and an inlet is provided to introduce high pressure gas into the quartz dome. The quartz door is filled with an inert gas, etc., although the pressure varies depending on the nature of the object.

また連続操業のため該石英ドームは複数準備し台車に載
せレール上でミニモーター又は手動により交互に該アー
クイメージ炉の放射鏡の焦点に運ぶ。而して該石英ドー
ムの位置はXYZ方向にダイヤル操作により正確に微調
整できる様に構成する。高圧ガス管及び水冷銅基盤の下
部即ち水冷銅プロツクに導入する冷水管は可撓性のもの
を、石英ドームの往復移動の距離だけ余分に長く取り付
ける。更にまた石英ドームの上面は各部分が上方又は斜
め上方からの光熱線の入射角度に対し略々直角となる様
に製作する。これは光熱線の屈折の損失を最小に抑える
ためである。而して目的物を入れた石英ドームを該放射
鏡の焦点下に移動し該目的物に焦点を合わせればキセノ
ンランプのイメージは石英ドームに気密に囲まれている
ため2,0000C〜3,500℃という従来比の種炉
では得られなかつた高温を発生し高融点の物質をも溶融
するに至る。本発明の特徴の一つとして目的物を直接加
熱溶融する方式をとつたため導電性のない物質に対して
もルツボ等を必要としないので目的物がルツボからの汚
染なしに溶融されるという利点がある。目的物が完全に
溶融すると、その大きさはイメージの大きさ以下にして
あるので、液状となつて表面張力により球形となり水冷
銅基盤と点接触になるから、冷却により失う熱よりも加
熱による熱量が遥かに多い状態となつている。
For continuous operation, a plurality of quartz domes are prepared and placed on a trolley and transported alternately to the focal point of the radiation mirror of the arc image furnace on a rail by a mini motor or manually. The position of the quartz dome is configured so that it can be precisely and finely adjusted in the XYZ directions by dial operation. The high-pressure gas pipe and the cold water pipe leading to the lower part of the water-cooled copper base, that is, the water-cooled copper block, are made of flexible ones and are installed with an extra length corresponding to the distance of the reciprocating movement of the quartz dome. Furthermore, the upper surface of the quartz dome is manufactured so that each part is approximately perpendicular to the angle of incidence of the light beam from above or diagonally above. This is to minimize the loss due to refraction of the heat ray. If you move the quartz dome containing the object under the focal point of the radiation mirror and focus on the object, the image of the xenon lamp will be 2,0000C to 3,500C because it is airtightly surrounded by the quartz dome. It generates a high temperature of °C, which cannot be obtained with conventional seed furnaces, and can even melt substances with high melting points. One of the features of the present invention is that the object is directly heated and melted, so there is no need for a crucible, even for non-conductive substances, so the object can be melted without contamination from the crucible. There is. When the target is completely melted, its size is smaller than the image size, so it becomes liquid, becomes spherical due to surface tension, and comes into point contact with the water-cooled copper substrate, so the amount of heat lost by heating is greater than the heat lost by cooling. are now far more common.

其の後において加熱を止めるのであるが、その方法は、
レール上で石英ドームの位置を変えるか、又はアークイ
メージ炉の電源を開とするか、又は受光鏡からの光熱線
の放射過程の途中において耐熱板を用いて、光熱線を遮
断する等のうち一つ以上の手段をとればよい。而して一
旦加熱を止めれば目的物と水冷銅基盤との温度差が極め
て大きいので超急冷されることになる。従来技術の冷却
速度は略々1030K/Sec止りであるが、本発明方
法では例えば前述の装置によればその冷却速度は凡そ1
04前K/Sec程度となる。このように本発明方法に
おいて冷却速度が従来技術を超えて高いもう一つの要因
は加熱された目的物がドーム内で移動することなく直ち
に急冷されるためである。本発明方法によれば以上のよ
うにしてアークイメージ炉を用いて加熱後目的物を水冷
銅基盤等により超急冷することができ、それによつてア
モルフアスを確実に製造することができる。
After that, the heating is stopped, and the method is as follows.
Either change the position of the quartz dome on the rail, turn on the power to the arc image furnace, or use a heat-resistant plate to block the photothermal rays during the process of emitting the photothermal rays from the receiver mirror. You may take one or more measures. Once the heating is stopped, the temperature difference between the target object and the water-cooled copper substrate is extremely large, so that the object is cooled extremely rapidly. The cooling rate of the conventional technology is approximately 1030 K/Sec, but in the method of the present invention, for example, using the above-mentioned apparatus, the cooling rate is approximately 1030 K/Sec.
It will be about K/Sec before 04. Another reason why the cooling rate of the method of the present invention is higher than that of the prior art is that the heated object is immediately quenched without moving within the dome. According to the method of the present invention, as described above, after heating using an arc image furnace, the target object can be ultra-quenched using a water-cooled copper substrate or the like, thereby making it possible to reliably produce amorphous amorphous.

次に実施例により本発明方法について詳細に説明する。Next, the method of the present invention will be explained in detail with reference to Examples.

実施例 第1図は本発明方法の一例としての実施に用いるアーク
イメージ炉の一部断面説明図である。
Embodiment FIG. 1 is a partially cross-sectional explanatory diagram of an arc image furnace used for carrying out an example of the method of the present invention.

先ずキセノンランプ1から出た光熱線は受光鏡2により
反射され、次に平面反射鏡3により凡そ上方に反射され
、更に放射鏡4によつて反射され放射鏡の結像位置に置
かれた石英ドーム5に集光する。石英ドーム5は台車6
に載荷しワイヤ7によつて牽引し該結像位置付近に運び
略々静置する。更に目的物の位置は台車6のレール14
に付属したXYZ軸方向位置調整装置8によりダイヤル
で正確に微調整してイメージに合致させる。而して光熱
線が目的物9に集光すればドーム内の温度も上り、目的
物9の温度も非常な高温となる。本実施例では光高温計
で測定したところ約3,000℃であつた。第2図は本
発明の実施に用いる石英ドーム5及び水冷銅基盤11の
拡大一部縦断面説明図であり、両者はパツキン10を介
してねじ結合し、更に水冷銅基盤11は台車6にボルト
締め載荷した。水冷銅基盤11の上面は上に凹の半径大
なる球面の一部に形成し、内部中空の短円筒形をなし、
横面に入口冷水管12及び出口冷水管12′を取付け通
水した。短い矢印は冷水の流れの方向の例を示し、石英
ドーム5を貫く長い矢印は光熱線の方向を示す。石英ド
ーム5内水冷銅基盤11の上面中央に目的物9として予
じめムライト系組成物の塊を置き入口高圧ガス管13で
不活性ガスを充満させ、出口高圧ガス管13′により圧
力を調節した。
First, the light heat rays emitted from the xenon lamp 1 are reflected by the receiver mirror 2, then approximately upwardly reflected by the plane reflector 3, and further reflected by the emitter mirror 4, and then reflected by the quartz crystal placed at the imaging position of the emitter mirror. The light is focused on the dome 5. Quartz dome 5 is trolley 6
The image forming apparatus is loaded on the image forming apparatus, and is pulled by the wire 7 and brought to the vicinity of the imaging position and left almost stationary. Furthermore, the position of the target is the rail 14 of the trolley 6.
The XYZ-axis direction position adjustment device 8 attached to the unit allows precise fine adjustment using dials to match the image. If the photothermal rays are focused on the object 9, the temperature inside the dome will rise, and the temperature of the object 9 will also become extremely high. In this example, the temperature was about 3,000°C when measured with an optical pyrometer. FIG. 2 is an enlarged partial longitudinal cross-sectional view of the quartz dome 5 and the water-cooled copper base 11 used in the implementation of the present invention. Tightly loaded. The upper surface of the water-cooled copper substrate 11 is formed as a part of an upwardly concave spherical surface with a large radius, and has a short cylindrical shape with an internal hollow.
An inlet cold water pipe 12 and an outlet cold water pipe 12' were attached to the side surface for water flow. The short arrows show examples of the direction of cold water flow, and the long arrows passing through the quartz dome 5 show the direction of the photothermal rays. A lump of mullite composition is placed in advance as the object 9 in the center of the upper surface of the water-cooled copper substrate 11 inside the quartz dome 5, and the inert gas is filled with the inlet high-pressure gas pipe 13, and the pressure is adjusted with the outlet high-pressure gas pipe 13'. did.

第3図は第2図に示した水冷銅基盤11のA−Aにおけ
る一部横断面説明図であり該銅基盤内に示した短い矢印
は冷却用水流の方向の例を示してある。而して約20秒
の加熱により目的物9は完全に溶融し表面張力によつて
球形となり求心的作用によつて、該球形目的物9は水冷
銅基盤11の中央に落ち着いた。此の後該台車6のワイ
ヤー7を一方に引きレール14上を移動させることによ
り加熱を止め該目的物9を水冷銅基盤11との接触によ
り超急冷した。冷却速度は1040K/Sec程度と推
定された。また冷却後該目的物9のムライト系物質をX
線回折試験により検査したところ第4図に示す通りなだ
らかなX線回折図となり、第5図の典型的なピークを有
するムライト結晶のX線回折図とは、全く異なり殆んど
がアモルフアスであることが認められたので、ムライト
系アモルフアスとなつたことが確認された。以上により
本発明の効果は次の如くである。
FIG. 3 is a partial cross-sectional view taken along line A--A of the water-cooled copper board 11 shown in FIG. 2, and the short arrows shown in the copper board indicate an example of the direction of the cooling water flow. By heating for about 20 seconds, the object 9 completely melted and became spherical due to surface tension, and the spherical object 9 settled in the center of the water-cooled copper substrate 11 due to centripetal action. After this, the wire 7 of the trolley 6 was pulled to one side and moved on the rail 14 to stop the heating, and the object 9 was ultra-quenched by contact with the water-cooled copper substrate 11. The cooling rate was estimated to be about 1040K/Sec. In addition, after cooling, the mullite-based substance of the target object 9 is
When inspected by a ray diffraction test, the X-ray diffraction pattern was smooth as shown in Figure 4, which was completely different from the X-ray diffraction diagram of a mullite crystal with typical peaks shown in Figure 5, indicating that most of the material was amorphous. Since this was observed, it was confirmed that the material had become mullite-based amorphous. Based on the above, the effects of the present invention are as follows.

1キセノンランプを用い結像点を石英ドームで覆つたの
で、此の種アータイメージ炉としては従来技術では得ら
れなかつた高温で目的物を加熱することができ、従つて
此の種の炉で従来溶融できなかつた高融点の物質を溶融
することができる。
By using a 1 xenon lamp and covering the imaging point with a quartz dome, this type of artaimage furnace can heat the object at a high temperature that could not be obtained with conventional technology. It is possible to melt substances with high melting points that could not be melted conventionally.

2本発明方法によれば導電体から絶縁体まですべての材
料についてルツボなしに任意の雰囲気の下で加熱溶融す
ることができるので、従来のようなルツボによる汚染の
問題が解決される。
2. According to the method of the present invention, all materials from conductors to insulators can be heated and melted in any atmosphere without a crucible, so the problem of contamination caused by a crucible as in the conventional method is solved.

3従来方法では溶融目的物を或距離移動させるので、目
的物を薄片にしたとしても、冷却速度はあまり大きくな
いが、本発明方法ではアークイメージの焦点から僅かに
離れれば温度は低くなるので加熱部分と冷却部分は非常
に近づけることが可能であり、更に本発明方法の水冷銅
基盤との接触冷却を組み合わせたことにより、急冷速度
は従来技術を超えるものとなる。
3. In the conventional method, the molten object is moved a certain distance, so even if the object is made into a thin piece, the cooling rate is not very high. However, in the method of the present invention, the temperature decreases when the object is slightly away from the focus of the arc image, so heating is not possible. The close proximity of the parts to the cooling parts, combined with the contact cooling of the method of the present invention with a water-cooled copper substrate, results in quenching rates that exceed those of the prior art.

4目的物を移動することなく非常な高温から水冷銅基板
により超急冷することができるので従来得られなかつた
高融点物質の非晶質材料或は準安定物質を得ることがで
き、従つて半導体其の他の電子材料或は光学機器用材料
等の優れた素材の製法として最新の技術の進歩に大きく
貢献することができる。
4. It is possible to ultra-rapidly cool the target material from a very high temperature using a water-cooled copper substrate without moving it, making it possible to obtain amorphous materials or metastable materials with high melting points that were previously unobtainable. It can greatly contribute to the advancement of the latest technology as a manufacturing method for other excellent materials such as electronic materials and optical equipment materials.

尚前記の実施例は本発明の実施の一例にすぎないから、
本発明の技術的範囲は前記実施例の範囲に限られるもの
ではない。
It should be noted that the above-mentioned embodiment is only an example of implementing the present invention.
The technical scope of the present invention is not limited to the scope of the above embodiments.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明方法の一例としての実施に用いるアーク
イメージ炉の一部断面説明図である。 第2図は本発明の実施に用いる石英ドーム及びその台車
の拡大一部縦断面説明図である。第3図は水冷銅プロツ
クの一部横断面説明図である。第4図は本発明の方法に
より得られたムライト系アモルフアスのX線回折図、第
5図はムライト系結晶質物のX線回折図である。各図に
おいて1はキセノンランプ、2は受光鏡、3は平面反射
鏡、4は放射鏡、5は石英ドーム、6は台車、7はワイ
ヤー、8は目的物位置のXYZ軸方向の調整装置、9は
目的物、10はパツキン、11は水冷銅基盤、12は入
口冷水管、12′は出口冷水管、13は入口高圧ガス管
、13′は出口高圧ガス管、14はレール、である。
FIG. 1 is a partially cross-sectional explanatory diagram of an arc image furnace used for carrying out an example of the method of the present invention. FIG. 2 is an enlarged partial longitudinal cross-sectional view of a quartz dome and its cart used in the implementation of the present invention. FIG. 3 is a partial cross-sectional view of the water-cooled copper block. FIG. 4 is an X-ray diffraction diagram of mullite-based amorphous obtained by the method of the present invention, and FIG. 5 is an X-ray diffraction diagram of mullite-based crystalline material. In each figure, 1 is a xenon lamp, 2 is a light receiving mirror, 3 is a plane reflector, 4 is a radiation mirror, 5 is a quartz dome, 6 is a trolley, 7 is a wire, 8 is an adjustment device for the XYZ axis direction of the target position, 9 is an object, 10 is a gasket, 11 is a water-cooled copper base, 12 is an inlet cold water pipe, 12' is an outlet cold water pipe, 13 is an inlet high pressure gas pipe, 13' is an outlet high pressure gas pipe, and 14 is a rail.

Claims (1)

【特許請求の範囲】[Claims] 1 アークイメージ炉を用いて、その結像位置の付近に
、気密に結合した耐熱ガラスドームと水冷銅基盤とを配
置し、その間に目的物を収納し、該目的物を結像位置に
合致させ、イメージ炉の光熱線を集中照射して目的物を
加熱溶融させた後、加熱を止め、該溶融目的物を該水冷
銅基盤との接触により急冷することを特徴とするアーク
イメージ炉を用いた加熱後目的物急冷方法。
1 Using an arc image furnace, a heat-resistant glass dome and a water-cooled copper base are placed in an airtight manner near the imaging position, an object is housed between them, and the object is aligned with the imaging position. , an arc image furnace is used, which is characterized in that after the object is heated and melted by concentrated irradiation with the photothermal rays of the image furnace, the heating is stopped and the molten object is rapidly cooled by contact with the water-cooled copper substrate. Method for rapidly cooling the object after heating.
JP55164779A 1980-11-22 1980-11-22 Method for rapidly cooling an object after heating using an arch-image furnace Expired JPS596175B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55164779A JPS596175B2 (en) 1980-11-22 1980-11-22 Method for rapidly cooling an object after heating using an arch-image furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55164779A JPS596175B2 (en) 1980-11-22 1980-11-22 Method for rapidly cooling an object after heating using an arch-image furnace

Publications (2)

Publication Number Publication Date
JPS5787831A JPS5787831A (en) 1982-06-01
JPS596175B2 true JPS596175B2 (en) 1984-02-09

Family

ID=15799776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55164779A Expired JPS596175B2 (en) 1980-11-22 1980-11-22 Method for rapidly cooling an object after heating using an arch-image furnace

Country Status (1)

Country Link
JP (1) JPS596175B2 (en)

Also Published As

Publication number Publication date
JPS5787831A (en) 1982-06-01

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