JPS5986252A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5986252A
JPS5986252A JP57196209A JP19620982A JPS5986252A JP S5986252 A JPS5986252 A JP S5986252A JP 57196209 A JP57196209 A JP 57196209A JP 19620982 A JP19620982 A JP 19620982A JP S5986252 A JPS5986252 A JP S5986252A
Authority
JP
Japan
Prior art keywords
power source
type impurity
diode
wirings
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57196209A
Other languages
Japanese (ja)
Inventor
Nobuyuki Miyazaki
信行 宮崎
Zenzo Oda
善造 小田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP57196209A priority Critical patent/JPS5986252A/en
Publication of JPS5986252A publication Critical patent/JPS5986252A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate the damage of an element even when a power source is connected erroneously in reverse direction by providing a diode of reverse direction to the polarility of the power source at the intermediate between a power source pad and a combining circuit. CONSTITUTION:A protecting diode is composed of high power source side wirings 302, low power source side wirings 301, a high density P type impurity diffused region 304, a high density N type impurity diffused region 303, an N type substrate 305, and a low density P type impurity diffused region 306, and a wiring width is increased in thickness to avoid the melting of the power source aluminum wirings due to large current. Wirings 405, 406 from the pad 401 of the low power side and the pad 402 of high power side to the diode are increased in thickness as compared with the wirings 405, 408 to supply power to an internal circuit 410. In this manner, even when the power source is connected erroneously in reverse direction, excess large current is absorbed to the diode, thereby suppressing the current flowed to the internal circuit.

Description

【発明の詳細な説明】 本発明は電源間に寄生ダイオード以外のダイオードを設
けることにより、逆方向Ｋ１１Ｉ源を接続した時に素子
が破壊されることを防ぐ半導体集積回路に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor integrated circuit that prevents elements from being destroyed when a reverse K11I source is connected by providing a diode other than a parasitic diode between power supplies.

従来の半導体集積回路を第１図に示す。１０１はアルミ
配線、１０２は高濃度のＰ型不純物拡散領域、１０３は
高濃度のＮ型不純物拡散領域、１０４は低濃度のＰ型不
純物拡散領域、１０５はＮ型基板を示している。このよ
うな従来構造の半導体集積回路に於ては、誤って通常動
作状態と逆方向に電源電圧を印加した場合、１０４と１
０５の接合は順方向となり電源間に大電流が流れる。こ
の大電流により電源のアルミ配線が溶解し断線を引き起
こす。A conventional semiconductor integrated circuit is shown in FIG. 101 is an aluminum wiring, 102 is a high concentration P type impurity diffusion region, 103 is a high concentration N type impurity diffusion region, 104 is a low concentration P type impurity diffusion region, and 105 is an N type substrate. In a semiconductor integrated circuit with such a conventional structure, if a power supply voltage is accidentally applied in the opposite direction to the normal operating state, 104 and 1
The junction of 05 is in the forward direction, and a large current flows between the power supplies. This large current melts the power supply's aluminum wiring, causing disconnection.

本発明はかかる欠点を除去したもので、その目的は誤っ
て逆方向にｉ！源を接続した場合に於ても素子が破壊さ
れないようにすることである。The present invention eliminates such drawbacks and its purpose is to erroneously reverse i! The purpose is to prevent the element from being destroyed even when the power source is connected.

以下実施例に基づいて本発明の詳細な説明する。The present invention will be described in detail below based on Examples.

第２図、第３図は本発明による保護回路の構造を示す。2 and 3 show the structure of the protection circuit according to the invention.

２０１．３０２は高電源側のアルミ配線、２０２，３０
１は低電源側のアルミ配線、２０３．３０４は高濃度の
Ｐ型不純物拡散領域、２０４．３０３は高濃度のＮ型不
純物拡散領域、２０５．６０５はＮ型基板、３０６は低
濃度のＰ型不純物拡散領域を示している。このような保
護ダイオードは出来るだけ電源パッドの近くに作り込み
、大電流による電源アルミ配線の溶解が起こるこ七を避
ける為拠、２０１．２０２，３０１．３０２のアルミ配
線幅は太くしなければならない。201.302 is aluminum wiring on the high power side, 202,30
1 is aluminum wiring on the low power supply side, 203.304 is a high concentration P type impurity diffusion region, 204.303 is a high concentration N type impurity diffusion region, 205.605 is an N type substrate, 306 is a low concentration P type It shows an impurity diffusion region. Such a protection diode should be built as close to the power supply pad as possible, and in order to avoid melting of the power supply aluminum wiring due to large currents, the width of the aluminum wiring at 201.202 and 301.302 must be wide. .

第４図は保護回路を含む電源まわりの平面構造を示す。FIG. 4 shows the planar structure around the power supply including the protection circuit.

４０１は低電源側のパッド、４０２は高電源側のパッド
、４０６は高濃度のＰ型不純物拡散領域、４０４は高濃
度のＮ型不純物領域、４０５．４０６，４０７，４０８
はアルミ配線、４０９は低濃度のＰ型不純物領域である
。４０５，４０６は保護ダイオードまでのアルミ配線で
あり、内部回路へ電源を供給する為の配線４０７，４０
８と比較し太くなっている。401 is a pad on the low power supply side, 402 is a pad on the high power supply side, 406 is a high concentration P type impurity diffusion region, 404 is a high concentration N type impurity region, 405, 406, 407, 408
409 is an aluminum wiring, and 409 is a low concentration P-type impurity region. 405 and 406 are aluminum wiring up to the protection diode, and wiring 407 and 40 for supplying power to the internal circuit.
It is thicker than 8.

以上のように本発明によれば、誤って逆方向に電源を接
続した場合に於ても、電源パッド近くに設けられた保護
ダイオードに過大電流が吸収され、内部回路に流れ込む
電流を抑えることが出来る。As described above, according to the present invention, even if the power supply is accidentally connected in the opposite direction, the excessive current is absorbed by the protection diode provided near the power supply pad, and the current flowing into the internal circuit can be suppressed. I can do it.

これにより内部回路が破壊されるのを防ぐことが出来る
。実際この保護ダイオードを含む集積回路を試作し、単
玉乾電池４本を直列に繋ぎ逆方向に印加した実験を行な
い、ＩＣが破壊されないという効果が確認されている。This can prevent the internal circuit from being destroyed. In fact, an integrated circuit including this protection diode was prototyped, and an experiment was conducted in which four single dry cell batteries were connected in series and voltage was applied in the opposite direction, and it was confirmed that the IC would not be destroyed.

本発明は半導体集積回路に広く適用できる。The present invention can be widely applied to semiconductor integrated circuits.

特に携帯用機器に使用されるＭＯ８集積回路に於て、そ
の効果は顕著である。This effect is particularly noticeable in MO8 integrated circuits used in portable devices.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の半導体集積回路。 第２図、第３図は本発明による保護ダイオードの構造。 第４図は保護回路を含む電源まわりの平面構造。 １０１．２０１，２０２，３０１，３０２，４０５．４
０６，４０７，４０８はアルミ配線。 １０２．１０３，２０３，２０４，３０３．３０４．４
０３，４０４は高濃度不純物拡散領域。 １０４．３０６，４０９は低濃度不純物拡散領域。 １０５．２０５，３０５は基板。 ４０１．４０２は電源パッド。 ４１０は内部回路。 以　　上Figure 1 shows a conventional semiconductor integrated circuit. 2 and 3 show the structure of a protection diode according to the present invention. Figure 4 shows the planar structure around the power supply including the protection circuit. 101.201, 202, 301, 302, 405.4
06, 407, 408 are aluminum wiring. 102.103, 203, 204, 303.304.4
03,404 is a high concentration impurity diffusion region. 104, 306, and 409 are low concentration impurity diffusion regions. 105. 205 and 305 are substrates. 401.402 are power pads. 410 is an internal circuit. that's all

Claims (3)

【特許請求の範囲】[Claims] （１）電源の極性とは逆方向のダイオードを電源パッド
と内部回路の中間に設け、電源パッドがらそのダイオー
ドまでの電源配線の太さを内部回路の電源配線より太く
したことを特徴とする半導体集積回路。(1) A semiconductor characterized in that a diode with the polarity opposite to the power supply is provided between the power supply pad and the internal circuit, and the power supply wiring from the power supply pad to the diode is thicker than the power supply wiring of the internal circuit. integrated circuit. （２）　　該電源間に設けられた逆方向ダイオードが、
高濃度のＰ型不純物と低濃度のＮ型不純物より形成され
た特許請求の範囲第１項記載の半導体集積回路。(2) A reverse diode provided between the power supplies,
The semiconductor integrated circuit according to claim 1, which is formed from a high concentration of P-type impurity and a low concentration of N-type impurity. （３）　　該電源間に設けられた逆方向ダイオードが、
高濃度のＮ型不純物と低濃度のＰ型不純物より形成され
た特許請求の範囲第１項記載の半導体集積回路。(3) A reverse diode provided between the power supplies,
2. The semiconductor integrated circuit according to claim 1, wherein the semiconductor integrated circuit is formed from a high concentration of N-type impurity and a low concentration of P-type impurity.
JP57196209A 1982-11-09 1982-11-09 Semiconductor integrated circuit Pending JPS5986252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57196209A JPS5986252A (en) 1982-11-09 1982-11-09 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57196209A JPS5986252A (en) 1982-11-09 1982-11-09 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5986252A true JPS5986252A (en) 1984-05-18

Family

ID=16354012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57196209A Pending JPS5986252A (en) 1982-11-09 1982-11-09 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5986252A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211292A (en) * 1992-01-29 1993-08-20 Nec Corp Semiconductor input protection device
JP2002313947A (en) * 2001-04-12 2002-10-25 Fuji Electric Co Ltd Semiconductor device
JP2008100194A (en) * 2006-10-20 2008-05-01 Hitachi Constr Mach Co Ltd Tree crusher
CN101950750A (en) * 2009-06-29 2011-01-19 株式会社半导体能源研究所 Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960736A (en) * 1972-10-12 1974-06-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960736A (en) * 1972-10-12 1974-06-12

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211292A (en) * 1992-01-29 1993-08-20 Nec Corp Semiconductor input protection device
JP2002313947A (en) * 2001-04-12 2002-10-25 Fuji Electric Co Ltd Semiconductor device
JP2008100194A (en) * 2006-10-20 2008-05-01 Hitachi Constr Mach Co Ltd Tree crusher
CN101950750A (en) * 2009-06-29 2011-01-19 株式会社半导体能源研究所 Semiconductor device
JP2011029614A (en) * 2009-06-29 2011-02-10 Semiconductor Energy Lab Co Ltd Semiconductor device
US8836034B2 (en) 2009-06-29 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015130537A (en) * 2009-06-29 2015-07-16 株式会社半導体エネルギー研究所 Semiconductor device
CN104810354A (en) * 2009-06-29 2015-07-29 株式会社半导体能源研究所 Semiconductor device
US9230952B2 (en) 2009-06-29 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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