JPS599807A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPS599807A JPS599807A JP57119476A JP11947682A JPS599807A JP S599807 A JPS599807 A JP S599807A JP 57119476 A JP57119476 A JP 57119476A JP 11947682 A JP11947682 A JP 11947682A JP S599807 A JPS599807 A JP S599807A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- exceeds
- dielectric constant
- less
- tan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims description 13
- 229910052573 porcelain Inorganic materials 0.000 title description 10
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims 1
- 238000010304 firing Methods 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 235000014380 magnesium carbonate Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/472—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on lead titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/47—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
- Ceramic Capacitors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
仁の発明は高誘電率系の誘電体磁器組成物に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Jin's invention relates to a high dielectric constant dielectric ceramic composition.
従来、誘電率が１０００以上の磁器組成物としＣは、Ｂ
ａＴｉＯ３またはＢａＴｉＯ３を変成したものが実用化
されＣきた。しかしながら、このような材料からなる磁
器に厚み１０当り２〜４ＫＶの高圧直流電圧を印加する
と、静電容量の電圧依存性が大きく、静電容量が一２０
％〜−５０係も変化するとＩＱう欠点が見られた。Conventionally, C is a porcelain composition with a dielectric constant of 1000 or more, and B is
Modified aTiO3 or BaTiO3 has been put into practical use. However, when a high-voltage DC voltage of 2 to 4 KV per 10 of the thickness is applied to porcelain made of such materials, the voltage dependence of the capacitance is large, and the capacitance becomes 120
When the ratio of % to -50 changed, IQ disadvantages were seen.
一方、近年５ｒＴｉＯ，−ＬａＴｉＯ３−Ｂｉ２０．、
−Ｔｉｅ。On the other hand, in recent years, 5rTiO, -LaTiO3-Bi20. ,
-Tie.
などを基体成分とする磁器組成物が実用ｆヒされＣＩ０
る。この系は磁器、組成物は（＾わゆる緩和型強誘電体
と呼ばれるもので、室温で５００〜２０００の誘電率を
有し、かつその電圧依存性が９ａＴｉ０３系にくらべＣ
小さくへと亀＾う特徴を有し゛口＾る。しかしながら、
最適な誘電特性を得るための焼成温度が１２２０〜１３
２ Ｄ ”Ｃと高ＩＱため、焼成中にＭ発しゃすいｐｂ
ｏやＢｉ、Ｏ，を多ｔＫ含むこの系にお鬼＾′Ｃは、鉛
やビスマスの焼成算囲気を制御しなければ、均一な磁器
素体を得ることができず、量産性１品質の上で解決しな
ければならない問題が残されＣ１＾る。Porcelain compositions with base components such as
Ru. This system is made of porcelain, and its composition is called a relaxation type ferroelectric material, which has a dielectric constant of 500 to 2000 at room temperature, and its voltage dependence is lower than that of the 9aTi03 system.
It has a characteristic that it curves into a small mouth. however,
Firing temperature is 1220~13 to obtain optimal dielectric properties.
2 D Because of its high IQ, M is emitted during firing.
The problem with this system, which contains a large amount of o, Bi, O, and tK, is that unless the firing atmosphere of lead and bismuth is controlled, it is impossible to obtain a uniform porcelain body, and it is difficult to achieve mass production with 1 quality. There remains a problem C1^ that must be solved above.
したかつ−Ｕｓ この発明は上・へした糧々の問題点を
解決できる誘電体磁器組成物を提供することを目的とす
る。Shikatsu-Us An object of the present invention is to provide a dielectric ceramic composition that can solve the above problems.
また、この発明は誘電率が１０００以上でその直流電圧
依存性が小さ＼＾誘電体磁器組成物を提供することを目
的とする。Another object of the present invention is to provide a dielectric ceramic composition having a dielectric constant of 1000 or more and a small dependence on DC voltage.
さらに、この発明は低−＾温度で焼結が可能な誘電体磁
器組成物を提供することを目的とする。A further object of the present invention is to provide a dielectric ceramic composition that can be sintered at low temperatures.
以下この発明を実施例にもとづ（＾て詳細に説明する。This invention will be described in detail below based on examples.
純度９９チ以上の工業用原料であるＰｂ０．１３ｒＣｏ
＠、 ＣａＣ０，、ｍｑｃｏ、、 Ｂ１．ｏ、、 ’ｒ
ｉｏ、、 ＺｎＯ。Pb0.13rCo, an industrial raw material with a purity of 99% or higher
@, CaC0,, mqco,, B1. o,,'r
io,, ZnO.
Ｎｂ、ｏ、、 ＡｕｔｏｓおよびＣｅＯ，を素原料とし
Ｃ用（へた。Nb, o, Autos and CeO are used as raw materials for C (heta).
まず、ｐｂｏとＴｉＯ２，５ｒＣＯ，とＴｉｅ、、Ｃａ
Ｃ０゜とＴ ｉ Ｏ＊ ｍ オよびＭｇＣＯ３とＴ１０
．をそれぞれ等モル量調合し、１０００〜１１５０での
温度で仮焼することにより、ＰｂＴｉ０．．５ｒＴｉＯ
，、ＣａＴｉ０．。First, pbo and TiO2, 5rCO, and Tie, Ca
C0゜ and T i O* m O and MgCO3 and T10
．． PbTi0. ．． 5rTiO
,, CaTi0. .
Ｍ９ＴｉＯ，を合成した。このほか、Ｂｉ、Ｏ，、Ｔｉ
ｅ、。M9TiO was synthesized. In addition, Bi, O, Ti
e.
Ｚｎ０．１１ ＪＯｓ、 Ａ ｊ’ｔＯ，およびＣｅＯ
，とともに、第１表に示す組成比率の磁器が得られるよ
うに秤量した。この秤量原料を酢酸ビニール系バインダ
３重量％とともにポリエチレン製のボットミルに入れ、
アルミナボールを用箋へ−ｒ、１２時間湿式混合。Zn0.11 JOs, A j'tO, and CeO
, and were weighed to obtain porcelain having the composition ratio shown in Table 1. This weighed raw material was put into a polyethylene bot mill along with 3% by weight of vinyl acetate binder.
Wet mix the alumina balls to the paper for 12 hours.
粉砕を行った。そののち蒸発乾燥し、８５メツシユの篩
を通し・Ｃ整粒し、オイルプレスを用１へＣ１ｄ当り１
０００すの圧力で、直径１７ａ＋、厚みｔ２Ｕの円板に
成形した。Shredded. After that, it is evaporated and dried, passed through an 85-mesh sieve and sized, and then passed through an oil press at a rate of 1 per 1 d of C.
It was molded into a disc with a diameter of 17a+ and a thickness of t2U under a pressure of 1,000mm.
この成形物をジルコニア質の匣に入れ、１０００〜１５
２０ｔ の温度で２時間焼成した。焼成し”Ｃ得られ
た磁器素体の両面に銀ペーストを塗布し。Place this molded product in a zirconia box and
It was fired for 2 hours at a temperature of 20t. Silver paste was applied to both sides of the fired porcelain body.
８００ｔ″で焼付けして電極を形成し、これを試料とし
た。An electrode was formed by baking at 800 t'', and this was used as a sample.
得られた試料につき、周波数Ｉ ＫＫ２＋で誘電率（ε
）と誘電損失正接（ｔａｎδ）を測定した。また試料に
４ＫＶ／ｍの直流電圧を重畳したときの誘電率変化（バ
イアス特性）を測定し、その結果を第２表に示した。For the sample obtained, the dielectric constant (ε
) and dielectric loss tangent (tan δ) were measured. In addition, changes in dielectric constant (bias characteristics) when a DC voltage of 4 KV/m was superimposed on the sample were measured, and the results are shown in Table 2.
なお、第２表中１焼成温度１とは、焼成温度を変化させ
たとき、最高の誘電率を得ることのできる温度を意味し
、この温度以下では十分に焼結した磁器が得られな偽。Note that 1 firing temperature 1 in Table 2 means the temperature at which the highest dielectric constant can be obtained when the firing temperature is changed; below this temperature, sufficiently sintered porcelain cannot be obtained. .
また１焼成温度１以上の温度で焼成すると、温度の上昇
とともに誘電率は低ＦＬ、試料間または匣との融着反応
が生じる。Furthermore, when firing at a temperature higher than 1 firing temperature, the dielectric constant becomes low FL as the temperature rises, and a fusion reaction occurs between the samples or with the box.
＠１表、第２表中、試料番号１〜１１はこの発明範囲の
ものであり、※印を付し走試料番号１２〜２９はこの発
明範囲外のものである。In Tables 1 and 2, sample numbers 1 to 11 are within the scope of this invention, and sample numbers 12 to 29 marked with * are outside the scope of this invention.
□
ｌ
第１表、第２表から明らかなように、この発明範囲内の
ものによれば、最適な焼成温度が１０５０〜１１６０ｔ
’と従来にくらべ−〔１００〜２００Ｃ低込にもかかわ
らず、誘電率は１０００以上の高（へ値を示し、ｔａｎ
δも１チ以下とすぐれた値を示し゛〔いる。また、４Ｋ
Ｖ／馴の直流電圧を重畳印加したときの誘電率の変化率
は−２０チ以内の範囲に入り、変化率が小さいと１八う
すぐれた特性を有する。□ l As is clear from Tables 1 and 2, according to the products within the scope of this invention, the optimum firing temperature is 1050 to 1160 t.
Compared to the conventional model, the dielectric constant is higher than 1000 (despite the lower value of 100 to 200 C).
δ also shows an excellent value of less than 1 inch. Also, 4K
The rate of change in dielectric constant when a DC voltage of V/V is applied in a superimposed manner falls within the range of -20 cm, and when the rate of change is small, it has excellent characteristics.
ここで１組成範囲を限定した理由は次のとおシである。The reason for limiting one composition range here is as follows.
Ｐｔ）ＴｉＯ，が３６重量％未満になると、誘電率が１
０００未満となり、４０重量％を越えると。When Pt)TiO, is less than 36% by weight, the dielectric constant becomes 1.
000 and exceeds 40% by weight.
ｔａｎδが１ｔＩ６を越え、バイアス特性が悪くなる。If tan δ exceeds 1tI6, the bias characteristics will deteriorate.
５ｒＴｉＯｊが６重量係未満になると、 ｔａｎδが１
チを越えるとともに、バイアス特性が一２０俤を越え、
５５重量％を越えると誘電率が１０００未満と小さくな
る。ＣａＴｉＯｓが６重量−未満ではｔａｎδが１％を
越えるとともに、バイアス特性が一２０チを越え、１８
重量％を越えると１２７０ｔ’以上で焼成しな１八と焼
結が不十分になる。Ｍｇ’ｒ１ｏｓが０５重量％未満に
なると誘電率が１０００未満となり、１０重量％を越え
ると焼成ｌ温度が高くなり。When 5rTiOj becomes less than 6 weight coefficient, tan δ becomes 1
At the same time, the bias characteristic exceeds 120 yen,
When it exceeds 55% by weight, the dielectric constant becomes less than 1000. When CaTiOs is less than 6% by weight, the tan δ exceeds 1% and the bias characteristic exceeds 120 inches and 18
If the weight percentage exceeds 1,270 t' or more, the sintering will not be completed and the sintering will be insufficient. When Mg'r1os is less than 0.5% by weight, the dielectric constant becomes less than 1000, and when it exceeds 10% by weight, the firing temperature becomes high.
誘電率は低下する。Ｂｉ、Ｏ，が６重量％未満になると
、誘電率が１０００未満となり、２６重ｔチを越えると
、 ｔａｎδが１％を越え、バイアス特性が悪くなる
。ＴｌＯ２が６重量％未満になると、誘電率が１０００
未満となり、１５重量％を越えると。The dielectric constant decreases. When Bi, O, is less than 6% by weight, the dielectric constant becomes less than 1000, and when it exceeds 26% by weight, tan δ exceeds 1% and the bias characteristics deteriorate. When TlO2 is less than 6% by weight, the dielectric constant is 1000.
If it exceeds 15% by weight.
ｔａｎδが１チを越え、バイアス特性が悪くなる。If tan δ exceeds 1 inch, the bias characteristics will deteriorate.
ＺｎＯが０．２重１％未満になると、焼成温度が高くな
り、 ｔａｎδが１％を越え、 ４重敏チを越えると誘
電率が１０００未満となる。Ｎｔ）、Ｏ，が０．２重＃
、チ未満になると、焼成温度が高くなり、 ｔａｎδが
１チを越え、５重ｔチを越えると誘電率が１０００未満
となる。ＣｅＯ，が０．１重量％になると、焼成温度が
高くなり、 ｔａｎδが１俤を越え、４重なり、 ｔａ
ｎδが１チを越え、２重量％を越えると誘電率が１００
０未満となる。When the ZnO content is less than 0.2% by weight and 1%, the firing temperature becomes high and the tan δ exceeds 1%, and when the ZnO content exceeds 4% by weight, the dielectric constant becomes less than 1000. Nt), O, is 0.2 times #
When tan δ is less than 1, the firing temperature becomes high, and tan δ exceeds 1, and when tan δ exceeds 5, the dielectric constant becomes less than 1000. When CeO, becomes 0.1% by weight, the calcination temperature becomes high, tan δ exceeds 1 yen, 4 overlaps, and ta
When nδ exceeds 1 inch and exceeds 2% by weight, the dielectric constant becomes 100.
It becomes less than 0.
以上の説明から明らかなように、この発明にかかる誘電
体磁器組成物によれば、誘電率が１０００以上、 ｔａ
ｎδが１９ＩＩ未満、バイアス特性が一２０係以下の特
性を有するものが得られ、また焼成温度が低（０ため、
焼成雰囲気のコントロールを厳密に行わすに均一な磁器
が得られると（八う利点を有する。As is clear from the above description, the dielectric ceramic composition according to the present invention has a dielectric constant of 1000 or more, ta
A product with nδ of less than 19II and bias characteristics of less than 120 coefficients was obtained, and the firing temperature was low (0, so
Strict control of the firing atmosphere has the advantage of producing uniform porcelain.
特許出願人 株式会社 打出製作所 ３８−patent applicant Uchide Seisakusho Co., Ltd. 38-
Claims (1)
、０．、 ＺｎＯ。 Ｎｂ、Ｏ，、Ｃ，ｅＯ，およびＡｅｔＯｘ を各構成成
分とし。 これをＰｂＴｉ０１，５ｒＴｉＯ，、（ａＴｉｏ、、Ｍ
ｇＴｉ０Ｉｌ樽」、 Ｔｉｅ、、 ＺｎＯ，Ｎｂ、Ｏ，
、Ｃｅ’Ｏ，およびＡ ｅ ｚ Ｏｓとし゛〔表わした
とき、各組成が次に示される範囲にあることを特徴とす
る誘電体磁器組成物。 ＰｂＴｉ０１ ： ５５〜４０重量％ＥｌｒＴｉＯ３
： ６〜５５重量係 Ｃ屹ＴｉＯ３： ３〜１８重量％ＭｇＴｉ０．＝
０．５〜１０重量％Ｂｉ、０３ ： ６〜２６
重量％ ＴｉＯ之 ： ３〜１５順１ ＺｎＯ： ０．２〜４重Ｊｉ１％ Ｎｔ）２０． ： リ、２〜 ５重１１％Ｃ
ｅ Ｏ＊ ： Ｑ、 １〜４重量慢Ａｌ２Ｏ５：
Ｑ、１〜２重量％[Claims] PbO, SrO, Cab, M2O, Tie, Bi
,0. , ZnO. The constituent components are Nb, O, C, eO, and AetOx. This is PbTi01,5rTiO, (aTio,,M
gTi0Il barrel'', Tie,, ZnO, Nb, O,
, Ce'O, and A ez Os, each composition is within the range shown below. PbTi01: 55-40% by weight ElrTiO3
: 6-55 weight ratio C屹TiO3: 3-18 weight% MgTi0. =
0.5-10 wt% Bi, 03: 6-26
Weight % TiO: 3-15 order 1 ZnO: 0.2-4 times Ji1% Nt)20. : Li, 2-5 weight 11%C
e O*: Q, 1-4 arrogant Al2O5:
Q, 1-2% by weight
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57119476A JPS599807A (en) | 1982-07-08 | 1982-07-08 | Dielectric porcelain composition |
| US06/504,972 US4485181A (en) | 1982-07-08 | 1983-06-16 | Dielectric ceramic composition |
| DE19833321913 DE3321913A1 (en) | 1982-07-08 | 1983-06-16 | DIELECTRIC CERAMIC MASS |
| GB08318074A GB2123400B (en) | 1982-07-08 | 1983-07-04 | Dielectric ceramic composition |
| CA000432111A CA1198277A (en) | 1982-07-08 | 1983-07-08 | Dielectric ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57119476A JPS599807A (en) | 1982-07-08 | 1982-07-08 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS599807A true JPS599807A (en) | 1984-01-19 |
| JPH0332164B2 JPH0332164B2 (en) | 1991-05-10 |
Family
ID=14762243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57119476A Granted JPS599807A (en) | 1982-07-08 | 1982-07-08 | Dielectric porcelain composition |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4485181A (en) |
| JP (1) | JPS599807A (en) |
| CA (1) | CA1198277A (en) |
| DE (1) | DE3321913A1 (en) |
| GB (1) | GB2123400B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04296508A (en) * | 1991-03-25 | 1992-10-20 | Tahei Sakaguchi | Worked lumber for building material and manufacture thereof |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6023902A (en) * | 1983-07-18 | 1985-02-06 | 株式会社村田製作所 | Dielectric porcelain composition |
| JPS60124306A (en) * | 1983-12-06 | 1985-07-03 | 京セラ株式会社 | Dielectric porcelain composition |
| JPS62295304A (en) * | 1986-06-14 | 1987-12-22 | 株式会社村田製作所 | Dielectric ceramic composition |
| US4820670A (en) * | 1986-11-26 | 1989-04-11 | Murata Manufacturing Co., Ltd. | Dielectric ceramic composition |
| US4988650A (en) * | 1989-06-23 | 1991-01-29 | Murata Manufacturing Co., Ltd. | Auxiliary agent for sintering ceramic material |
| JPH0745337B2 (en) * | 1989-09-07 | 1995-05-17 | 株式会社村田製作所 | Dielectric porcelain composition |
| US5340784A (en) * | 1992-08-03 | 1994-08-23 | Ngk Spark Plug Company, Ltd. | Microwave dielectric ceramic composition |
| JP3767377B2 (en) * | 1999-12-27 | 2006-04-19 | 株式会社村田製作所 | Dielectric porcelain composition |
| EP1724244B1 (en) * | 2004-03-05 | 2013-07-03 | Ube Industries, Ltd. | Dielectric particle aggregate, low temperature sinterable dielectric ceramic composition using same, low temperature sintered dielectric ceramic produced by using same |
| KR101496448B1 (en) * | 2014-06-12 | 2015-03-03 | 에코디엠랩 주식회사 | Medium-permittivity dielectrics with excellent temperature stability and plasma light source using the same |
| CN105924152A (en) * | 2016-05-06 | 2016-09-07 | 电子科技大学 | Microwave dielectric ceramic material for multi-layer ceramic capacitor and preparing method of microwave dielectric ceramic material |
| CN106631001A (en) * | 2016-11-18 | 2017-05-10 | 电子科技大学 | Mg-Ca-Ti-based dielectric material for microwave multilayer ceramic chip capacitor (MLCC) and preparation method of Mg-Ca-Ti-based dielectric material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4959298A (en) * | 1972-10-12 | 1974-06-08 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3410705A (en) * | 1963-10-30 | 1968-11-12 | Tdk Electronics Co Ltd | Ceramic dielectrics |
| GB1029539A (en) * | 1963-12-18 | 1966-05-11 | Ass Elect Ind | Improvements relating to ceramic dielectrics |
| US3268783A (en) * | 1965-10-05 | 1966-08-23 | Murata Manufacturing Co | Capacitor comprising an nu-type semiconductor metallic oxide and a layer of compensated material |
| JPS5331280B2 (en) * | 1972-09-20 | 1978-09-01 | ||
| JPS5062214A (en) * | 1973-10-04 | 1975-05-28 | ||
| JPS5170500A (en) * | 1974-12-17 | 1976-06-18 | Murata Manufacturing Co | JUDENTAI JIKISOSEIBUTSU |
| JPS598923B2 (en) * | 1977-11-15 | 1984-02-28 | 株式会社村田製作所 | dielectric porcelain composition |
| JPS5792703A (en) * | 1980-11-28 | 1982-06-09 | Murata Manufacturing Co | Dielectric porcelain composition for compensating temperature |
| US4379854A (en) * | 1981-02-06 | 1983-04-12 | Erie Technological Products, Inc. | Low temperature firing (1800°-2100° F.) of barium titanate with flux (lead titanate-bismuth titanate-zinc oxide and boron oxide) |
-
1982
- 1982-07-08 JP JP57119476A patent/JPS599807A/en active Granted
-
1983
- 1983-06-16 DE DE19833321913 patent/DE3321913A1/en active Granted
- 1983-06-16 US US06/504,972 patent/US4485181A/en not_active Expired - Lifetime
- 1983-07-04 GB GB08318074A patent/GB2123400B/en not_active Expired
- 1983-07-08 CA CA000432111A patent/CA1198277A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4959298A (en) * | 1972-10-12 | 1974-06-08 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04296508A (en) * | 1991-03-25 | 1992-10-20 | Tahei Sakaguchi | Worked lumber for building material and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1198277A (en) | 1985-12-24 |
| DE3321913C2 (en) | 1992-10-22 |
| US4485181A (en) | 1984-11-27 |
| GB2123400B (en) | 1985-10-23 |
| JPH0332164B2 (en) | 1991-05-10 |
| GB8318074D0 (en) | 1983-08-03 |
| DE3321913A1 (en) | 1984-01-12 |
| GB2123400A (en) | 1984-02-01 |
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