JPS60114577A - chemical processing equipment - Google Patents

Abstract

PURPOSE:To subject a sample to a plasma treatment with good reproducibility by preventing generation of plasma in the space between a part for supplying electric power and a vacuum vessel and generating the stable plasma in the space between a load electrode and an earth electrode. CONSTITUTION:A part 108 for insulation consisting of a material such as ''Teflon'' or the like for preventing the contact between a vacuum vessel 101 and a part 105 for supplying electric power and insulating electrically the same is provided. An earth electrode 109 is disposed apart at about 40mm. distance from the surface of a load electrode 104 and is made into a disc-shape, on which a work 110 is held and is grounded. An insulating ring 110 made of ''Teflon'' into a disc shape contacts airtightly via an O-ring with the part 105. A bellows flange 112 is positioned without contacting with the circumference of the part 105 and the one end face thereof is joined airtightly via an O-ring to the vessel 101.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a chemical processing apparatus such as a parallel plate electrode type plasma etching apparatus, a two-reactive ion etching apparatus, or a plasma CVD apparatus.

Conventional structure and its problems Dry etching equipment used in plasma etching method, reactive ion etching method, Nochi S. etching method, etc. 'j Plug for film formation-q CV D (Chemical Vap
ourDeposition) device and Hunterlink device.

It is used as a manufacturing device V1 for various products such as thin film sensors and I' conductor parts.

Below-1. With reference to the drawings, we will explain the conventional chemical processing equipment and (
The plasma reaction bag space will be explained below.

Figure 1 shows a conventional plasma CVD apparatus.

1 is a vacuum container with a stainless steel membrane that can maintain a vacuum, 2 is a non-null for introducing gas into the vacuum container 1, and 3 is a device for evacuating the inside of the vacuum container 1. A pump, 4, is supplied with high-frequency θU power (Jl) with a frequency of 13.66 MIIZ, a load electrode with a disc shape, 5, a negative 6:
Supplying high frequency power to the r' electrode 4/ζth power supply component, 6 is a high frequency power supply with a frequency of 13.66 Mllz
i, 7 is a mating chew for adjusting the matching state of the high-frequency power load path; 8 is a Teflon material for preventing contact and insulating the vacuum container 1 and the power supply component 5; The insulating component 9 is placed on the surface of the load electrode 4 at a distance of about 40 mm, and is made of stainless steel and has a disk-like shape, and is used to hold objects. The sample stage is equipped with a heating element inside to heat the workpiece. .

Here, the vacuum container 1 and the sampling table 9 are grounded.

The operation of forming plasma silicon nitride Jll (hereinafter abbreviated as FSiN film) into a sample 10'2 using the plasma CVD apparatus constructed as follows will be described below.

First, the vacuum pump 3 generates a pressure f 3 in the vacuum container 1.
After evacuation to below 10-5 Torr, nitrogen (
(abbreviated as direct N2) gas at a flow rate of 1603 CCM.
I/2 is fully passed through and introduced into the vacuum vessel 1, and the evacuation speed is adjusted to maintain the pressure inside the vacuum vessel 1 at 0.3 ToOr.

Further, the surface temperature of the sample F410 is maintained at about 260° C. by adjusting the heater built in the sample table 9. Next, pass through nozzle 2 and add monosilane (1", 1" SiH4
11111r), ammonia (hereinafter referred to as NH3) gas, and N2 gas at a mixing ratio of 6=7:gugu and a mixed gas flow n of 160 SCCm, are introduced into the vacuum vessel 1, and , j′s air υ air velocity 1 The pressure within air 1 is 0.
Maintain at 3 Torr. Here, the high frequency power is 11,
A SiN film is formed on the surface of the sample 1o by supplying the mixed gas to the charged electrode 4 and converting the mixed gas into planuma.

However, in the configuration as described above, in addition to the gas plasma being applied to the space between the load electrode 4 and the test sample 9 required for the processing of the sample 10, the electric power O (supply part 5 and vacuum In the space between the inner wall of the container 1, plasma is generated continuously or intermittently depending on the pressure setting conditions or the load power of high-frequency power. The load condition of high-frequency power acting on the space between As a result, the rate of thin film formation and the quality of the formed film become unstable, and furthermore, in terms of the variation in the film pieces of the formed thin film, 10 Bl
! It is difficult to do so.) The military.

In this way, in the conventional plasma CVD apparatus R.

When processing test sample 10, power is 0 (resistant parts 5 and L"("
Due to the continuous or intermittent generation of plasma in the space between the inner wall of the container 1, a desired stable plasma is generated between the load electrode 4 and the sample table 9. It has the disadvantage of being difficult to do.

OBJECTS OF THE INVENTION In view of the drawbacks mentioned above, the present invention has been made to solve the problem of the problem that the power supply part and the inner wall of the vacuum vessel are :! It prevents plasma from being generated between the load electrode and the sample table, and generates stable plasma in the space between the load electrode and the sample table, making the sample sample as easy as possible.
Chemical processing equipment K1° capable of i+J plasma processing
It provides:

Structure of the Invention The chemical processing apparatus of the present invention is a chemical treatment apparatus of the present invention.
a vacuum container that can be controlled to introduce a predetermined gas into the vacuum container; a vacuum evacuation speed control device that evacuates the inside of the vacuum container; A load weight pole to which power is supplied, a ground electrode which is placed vertically at a fixed distance 114;・In order to process the above-mentioned workpiece by placing the workpiece in the space between the load electrode and the earth electrode, and generating gas plasma in the space between the load electrode and the earth electrode. , the power supply part that supplies the power to the negative electrode, the power supply that is the power supply source, and the power (J The bellows is joined to the surface of the r electrode through an insulator, and the bellows brings the gas atmosphere of the power supply part to atmospheric pressure. It is possible to prevent plasma from being generated in the space between the parts and the inner wall of the vacuum container, and to generate stable plasma in the space between the negative d:i electrode and the ground electrode, and to keep the objects under force under internal regulation 1. '1
1u <, it is possible to perform plasma treatment.

DESCRIPTION OF EMBODIMENTS One embodiment of the invention will be described with reference to the drawings:
? 5+', clear.

In FIG. 2, 101 is a vacuum container made of stainless steel that can supply and maintain a vacuum, 10211 is a nozzle for introducing gas into the vacuum container 101, and 103 is a nozzle for evacuating the inside of the vacuum container 101. vacuum evacuation equipment, 104
is supplied with 1111 frequency power with a frequency of 13.56 Mllz, and is a load electrode with a disk shape, 105 is a load electrode 10
power supply component for supplying high frequency power to 4, 106
is a high-frequency power supply with a frequency of 13.56M1lZ, 107 is a matching tuner for adjusting the matching state of the high-frequency power load path, and ios is for preventing contact between the vacuum container 101 and the power supply component 105 and electrically insulating them. Insulating parts with film quality of DEFRON, 109 is load voltage 4ii! 104
It is made of wood or stainless steel and has a disk-like shape, and is capable of holding objects. 1" function, a heater for heating the workpiece is installed inside, a ground electrode is grounded, 110id workpiece is A, A sample is made of silicon single crystal, and 111 is a sample whose film quality is The differential [1] has a disc shape and is hermetically joined to the power supply component 105 via an O-ring, an insulating link 112 is located around the power supply component without contact, - force fl, 1 The surfaces are hermetically joined to the vacuum container 101 with a QIJ link, and
The other end surface is airtightly joined to the surface of the insulating link 111 by the zero link, and the power IJ (a bellows flange capable of bringing the gas atmosphere of the assembly part 105 to atmospheric pressure; /I/1.

Regarding the chemical treatment equipment configured as above-C test i'
Taking as an example the case where a plasma 5ilQ film is formed on the surface of 1.110, the operation will be explained below.

First, the pressure inside the vacuum vessel 101 is evacuated to 3×1O-3 Torr or less using 1"1 air υ1 atmosphere'lA 103, and the nozzle 102 is evacuated with 7'7 of N2 at a flow rate of 160 SCCM. Then, the pressure inside the vacuum container 101 is maintained at -0.35 Torr by adjusting the air velocity by 1 in.

Map ξ, adjust the heater built in the ground electrode 109 and test the surface temperature of 1110 to 250'C.
．． to hold. Next, after stopping the introduction of the upper gas, the gas is passed through the nozzle 102 so that the gas composition becomes SiH4゜NH.
A mixed gas of 160 SCCM and N2 with a composition ratio of 6:7:Hirofu was introduced into a flow L14.S of 160 SCCM. Then, the pressure inside the vacuum container 101 is maintained at 0.35 Torr by adjusting the vacuum pressure.

Next, the high frequency power supply 106 generates a frequency of 13.66 M I
By supplying the high frequency power of the IZ through the matching tuner 107 and the power supply component 106 to the load electrode 104, the mixed gas is turned into plasma, and the sample 110 is
A SiN film is formed on the surface.

In other words, the mixed scum has plasma energy and sample 1.
Thermal energy supplied from the surface of sample No. 10 and the surface of ground electrode 109 causes decomposition and reaction based on the following chemical reaction formula, forming a SiN film on sample O.1110 surface-1.

7: Gas state S: Solid state Here, since the atmosphere surrounding the power supply component 105 is at human pressure, the surface of the power supply component 106 and the vacuum container 101
In addition, no plasma was generated in the space between the bellows flange 112 and the bellows flange 112. Therefore, when treating the sample wood 1110, stable plasma can be generated in the space between the load electrode 104 and the earth electrode 109, so the formation rate and quality of the SiN film on the surface of the sample 110 are stable. Furthermore, it is possible to reduce the variation in film thickness JIN due to instability of the plasma on the surface of the sample 110 to 111,
Sample 110 could be processed with good appearance.

As described above, according to this embodiment, there is provided a vacuum container capable of holding 10 times a vacuum, a nonull for controlling and introducing a predetermined gas into the vacuum container, and a A vacuum evacuation device for evacuation, a load electrode which is located in the vacuum container and to which a constant electric power of 7Ji is supplied, and a load electrode which is arranged vertically in one predetermined direction in line with the surface of the F'1 charge electrode. , and a workpiece is placed between a grounded earth electrode and at least one of the load electrode or the earth electrode, and
Generates gas plasma in the space between the load electrode and the earth electrode 4=
In order to process the workpiece, a power supply component for supplying all the power to the load electrode and a power fJ (supply iJ+i
i, and around the power supply parts without contact (5'
/', ii;i', one end surface is hermetically joined to the vacuum container, and fIi! By having a bellows that airtightly assists the 'I'aj plane of the force through the surface of the load electrode and the insulator, and brings the gas atmosphere of the power supply component into the H-state, the Plasma CV D ll on the surface
! When forming a, stable plasma can be generated in the space between the i electrode and the earth electrode, so the formation speed of the plasma CVD film on the sample surface and the amount of the formed film are For example, the film quality such as the refractive index is stabilized, and furthermore, it is possible to reduce the dispersion caused by the stability of the plasma on the sample surface of the film I'l, and it is possible to process the sample with good appearance. be.

Since the bellows are used, the front 'l'i,j
The stopper between the pole and the earth electrode can be easily changed. Therefore, in the processing of trial) 1, the plasma processing in which the distance is changed continuously or intermittently during the processing is also r
jJ Noh.

Effects of the Invention As described in Part 2, the chemical processing apparatus of the present invention comprises a vacuum container capable of maintaining a vacuum state, a nozzle for controlling and introducing a predetermined gas into the vacuum container, and a vacuum container. an internal vacuum υ1 atmosphere vacuum evacuation device, a load electrode located in the vacuum container and to which a predetermined electric power is supplied, and arranged in line with the surface of the load electrode at a predetermined distance, and the workpiece is placed on one of the grounded earth electrode and at least the load electrode or the earth electrode, and
A gas plasma is generated in the space between the load electrode and the ground electrode, and a power supply component for supplying power to the load electrode and a power source as a power supply source are used to process the workpiece. , around the power supply parts (i″/, i
i', t L, - One end face is hermetically joined to the vacuum vessel, and the other end face (1, d□' By providing a bellows that brings the gas atmosphere to atmospheric pressure, electric power can be generated in the space between the supply part and the inner wall of the vacuum vessel.

It is possible to prevent plasma generation and generate stable plasma in the space between the load electrode and the earth electrode, and reproduce the workpiece.1.1. Well, it is possible to perform plasma chemical treatment, and the distance between the load electrode and the ground electrode can be easily changed under conditions that can produce the above effect, and its practical effects There is something called a person.

In the above embodiments, the case where a plasma CVD film is formed is taken as an example, but plasma etching, reactive ion etching, and sputtering may also be applied to the space between the load electrode and the ground electrode. Stable plasma can be generated, and the same effect as in item -11 can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of a conventional plasma reactor in the if-plane. FIG. 2 is a front cross-sectional view of a Zolazmas reactor according to an example of the present invention. 101... Vacuum container, 102... Nozzle, 103-=...- Vacuum exhaust device, 104...
r'J ('I '+il', pole, 105...power 0 (line parts, 106...power 11; 1.109.
...Earth electrode, 112...Bellows. Figure 1 Figure 2

Claims (4)

[Claims] (1) A vacuum container capable of maintaining a vacuum state, a nozzle for controlling and introducing a predetermined gas into the vacuum container, a vacuum evacuation device for evacuating the inside of the vacuum container, and a vacuum container. a load electrode located within the load electrode to which a predetermined power is supplied; a ground electrode placed a predetermined distance from the surface of the load electrode and grounded; and at least one of the load electrodes or the ground electrode. A power supply component for disposing a workpiece on either side, generating gas plasma in a space between a load electrode and a ground electrode, and supplying power to the load electrode for processing the workpiece; It is located in a non-contact manner around the power source, which is the power supply source, and the power supply components, and one end surface is hermetically connected to the vacuum container, and the other end surface is connected to the surface of the load electrode through an insulator, and is tightly sealed at -℃. A chemical processing device consisting of a bellows that is joined together and brings the gas atmosphere of the power supply parts to atmospheric pressure. (2) The chemical processing apparatus according to claim 1, wherein the bellows is a welded bellows or a molded bellows whose material is stainless steel. (3) The chemical processing apparatus according to claim 1, wherein the power source is a high frequency power source having a frequency of 13.56 Mllz. (4) The chemical processing apparatus according to claim 1, wherein the vacuum container is made of stainless steel, aluminum, or aluminum alloy.