JPS60128657A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS60128657A
JPS60128657A JP58236850A JP23685083A JPS60128657A JP S60128657 A JPS60128657 A JP S60128657A JP 58236850 A JP58236850 A JP 58236850A JP 23685083 A JP23685083 A JP 23685083A JP S60128657 A JPS60128657 A JP S60128657A
Authority
JP
Japan
Prior art keywords
capacitor
type
trench
groove
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58236850A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6240868B2 (fr
Inventor
Yukimasa Uchida
内田　幸正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58236850A priority Critical patent/JPS60128657A/ja
Priority to KR1019840007691A priority patent/KR890004764B1/ko
Priority to EP84115474A priority patent/EP0169938B1/fr
Priority to DE8484115474T priority patent/DE3477532D1/de
Publication of JPS60128657A publication Critical patent/JPS60128657A/ja
Publication of JPS6240868B2 publication Critical patent/JPS6240868B2/ja
Priority to US07/857,727 priority patent/US5428236A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58236850A 1983-12-15 1983-12-15 半導体記憶装置 Granted JPS60128657A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58236850A JPS60128657A (ja) 1983-12-15 1983-12-15 半導体記憶装置
KR1019840007691A KR890004764B1 (ko) 1983-12-15 1984-12-06 반도체 기억장치
EP84115474A EP0169938B1 (fr) 1983-12-15 1984-12-14 Dispositif de mémoire semi-conducteur comportant un condensateur dans un sillon
DE8484115474T DE3477532D1 (en) 1983-12-15 1984-12-14 Semiconductor memory device having trenched capacitor
US07/857,727 US5428236A (en) 1983-12-15 1992-03-26 Semiconductor memory device having trenched capicitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58236850A JPS60128657A (ja) 1983-12-15 1983-12-15 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS60128657A true JPS60128657A (ja) 1985-07-09
JPS6240868B2 JPS6240868B2 (fr) 1987-08-31

Family

ID=17006718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58236850A Granted JPS60128657A (ja) 1983-12-15 1983-12-15 半導体記憶装置

Country Status (2)

Country Link
JP (1) JPS60128657A (fr)
KR (1) KR890004764B1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60220958A (ja) * 1984-04-17 1985-11-05 Mitsubishi Electric Corp 半導体集積回路装置
JPS6249650A (ja) * 1985-08-28 1987-03-04 Nec Corp 半導体装置の製造方法
JPS62189730A (ja) * 1986-02-17 1987-08-19 Toshiba Corp 半導体装置の製造方法
US4905065A (en) * 1987-05-12 1990-02-27 Advanced Micro Devices, Inc. High density dram trench capacitor isolation employing double epitaxial layers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156358A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Semiconductor memory device
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
JPS58154256A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156358A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Semiconductor memory device
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
JPS58154256A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60220958A (ja) * 1984-04-17 1985-11-05 Mitsubishi Electric Corp 半導体集積回路装置
JPS6249650A (ja) * 1985-08-28 1987-03-04 Nec Corp 半導体装置の製造方法
JPS62189730A (ja) * 1986-02-17 1987-08-19 Toshiba Corp 半導体装置の製造方法
US4905065A (en) * 1987-05-12 1990-02-27 Advanced Micro Devices, Inc. High density dram trench capacitor isolation employing double epitaxial layers

Also Published As

Publication number Publication date
JPS6240868B2 (fr) 1987-08-31
KR850004878A (ko) 1985-07-27
KR890004764B1 (ko) 1989-11-25

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