JPS60150048A - レジストパタ−ンの作製方法及び該方法の実施に適するドライフイルムレジスト - Google Patents

レジストパタ−ンの作製方法及び該方法の実施に適するドライフイルムレジスト

Info

Publication number: JPS60150048A
Authority: JP; Japan
Prior art keywords: resist layer; polymer; group; layer; resist
Prior art date: 1983-11-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP59244728A

Other languages

English (en)

Japanese (ja)

Inventor

ラインホルト、イヨツト、レイラー

ゲールハルト、ヴエグナー

ミヒアエル、ミユラー

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

BASF SE

Original Assignee

BASF SE

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-11-26

Filing date

1984-11-21

Publication date

1985-08-07

1984-11-21 Application filed by BASF SE filed Critical BASF SE

1985-08-07 Publication of JPS60150048A publication Critical patent/JPS60150048A/ja

Status Pending legal-status Critical Current

Links

239000010410 layer Substances 0.000 claims description 211
229920000642 polymer Polymers 0.000 claims description 102
LLCSWKVOHICRDD-UHFFFAOYSA-N buta-1,3-diyne Chemical group C#CC#C LLCSWKVOHICRDD-UHFFFAOYSA-N 0.000 claims description 86
238000000034 method Methods 0.000 claims description 66
230000005855 radiation Effects 0.000 claims description 64
239000000758 substrate Substances 0.000 claims description 40
238000011161 development Methods 0.000 claims description 23
238000004519 manufacturing process Methods 0.000 claims description 15
230000008569 process Effects 0.000 claims description 14
230000015572 biosynthetic process Effects 0.000 claims description 12
238000000354 decomposition reaction Methods 0.000 claims description 12
125000005842 heteroatom Chemical group 0.000 claims description 12
238000005496 tempering Methods 0.000 claims description 12
238000011282 treatment Methods 0.000 claims description 12
238000003384 imaging method Methods 0.000 claims description 10
230000004913 activation Effects 0.000 claims description 8
125000001931 aliphatic group Chemical group 0.000 claims description 7
125000003118 aryl group Chemical group 0.000 claims description 7
239000007787 solid Substances 0.000 claims description 7
239000002253 acid Substances 0.000 claims description 6
125000004432 carbon atom Chemical group C* 0.000 claims description 6
239000004014 plasticizer Substances 0.000 claims description 6
238000012805 post-processing Methods 0.000 claims description 6
XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 5
JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 5
229920002120 photoresistant polymer Polymers 0.000 claims description 4
229920006395 saturated elastomer Polymers 0.000 claims description 4
125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 claims description 4
239000011247 coating layer Substances 0.000 claims description 3
125000004185 ester group Chemical group 0.000 claims description 3
238000010438 heat treatment Methods 0.000 claims description 3
DFPAKSUCGFBDDF-UHFFFAOYSA-N Nicotinamide Chemical group NC(=O)C1=CC=CN=C1 DFPAKSUCGFBDDF-UHFFFAOYSA-N 0.000 claims description 2
229920006237 degradable polymer Polymers 0.000 claims description 2
230000004048 modification Effects 0.000 claims description 2
238000012986 modification Methods 0.000 claims description 2
125000004122 cyclic group Chemical group 0.000 claims 1
239000010408 film Substances 0.000 description 27
239000000463 material Substances 0.000 description 19
HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 18
239000000203 mixture Substances 0.000 description 15
230000003287 optical effect Effects 0.000 description 14
239000002904 solvent Substances 0.000 description 14
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
238000010521 absorption reaction Methods 0.000 description 9
239000000178 monomer Substances 0.000 description 8
150000004056 anthraquinones Chemical class 0.000 description 6
238000005530 etching Methods 0.000 description 6
239000004065 semiconductor Substances 0.000 description 6
239000000126 substance Substances 0.000 description 6
PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Chemical class CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 5
238000005516 engineering process Methods 0.000 description 5
-1 nitropenzole Chemical compound 0.000 description 5
238000004528 spin coating Methods 0.000 description 5
OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 4
239000000654 additive Substances 0.000 description 4
150000001875 compounds Chemical class 0.000 description 4
239000004020 conductor Substances 0.000 description 4
239000011521 glass Substances 0.000 description 4
238000012545 processing Methods 0.000 description 4
230000009467 reduction Effects 0.000 description 4
YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
VYXSBFYARXAAKO-WTKGSRSZSA-N chembl402140 Chemical compound Cl.C1=2C=C(C)C(NCC)=CC=2OC2=C\C(=N/CC)C(C)=CC2=C1C1=CC=CC=C1C(=O)OCC VYXSBFYARXAAKO-WTKGSRSZSA-N 0.000 description 3
238000001035 drying Methods 0.000 description 3
239000007789 gas Substances 0.000 description 3
229920005989 resin Polymers 0.000 description 3
239000011347 resin Substances 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
239000010703 silicon Substances 0.000 description 3
WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical group [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 2
LRFVTYWOQMYALW-UHFFFAOYSA-N 9H-xanthine Chemical compound O=C1NC(=O)NC2=C1NC=N2 LRFVTYWOQMYALW-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
206010011732 Cyst Diseases 0.000 description 2
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
230000009471 action Effects 0.000 description 2
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
239000012752 auxiliary agent Substances 0.000 description 2
230000008901 benefit Effects 0.000 description 2
HHIIPNUHHIPSND-UHFFFAOYSA-N butyl 2-(ethoxycarbonylamino)acetate Chemical compound CCCCOC(=O)CNC(=O)OCC HHIIPNUHHIPSND-UHFFFAOYSA-N 0.000 description 2
230000008859 change Effects 0.000 description 2
229920001577 copolymer Polymers 0.000 description 2
239000007822 coupling agent Substances 0.000 description 2
208000031513 cyst Diseases 0.000 description 2
NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
238000000151 deposition Methods 0.000 description 2
239000000975 dye Substances 0.000 description 2
238000005323 electroforming Methods 0.000 description 2
230000001747 exhibiting effect Effects 0.000 description 2
239000011888 foil Substances 0.000 description 2
230000001678 irradiating effect Effects 0.000 description 2
239000002932 luster Substances 0.000 description 2
QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
229910052753 mercury Inorganic materials 0.000 description 2
229910052760 oxygen Inorganic materials 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
238000007747 plating Methods 0.000 description 2
238000006116 polymerization reaction Methods 0.000 description 2
238000007348 radical reaction Methods 0.000 description 2
229920003002 synthetic resin Polymers 0.000 description 2
239000000057 synthetic resin Substances 0.000 description 2
DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical class C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 1
GQEZCXVZFLOKMC-UHFFFAOYSA-N 1-hexadecene Chemical group CCCCCCCCCCCCCCC=C GQEZCXVZFLOKMC-UHFFFAOYSA-N 0.000 description 1
SXAMGRAIZSSWIH-UHFFFAOYSA-N 2-[3-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,2,4-oxadiazol-5-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NOC(=N1)CC(=O)N1CC2=C(CC1)NN=N2 SXAMGRAIZSSWIH-UHFFFAOYSA-N 0.000 description 1
RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 1
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
239000004342 Benzoyl peroxide Substances 0.000 description 1
OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
241000723346 Cinnamomum camphora Species 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
229910000881 Cu alloy Inorganic materials 0.000 description 1
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
206010034972 Photosensitivity reaction Diseases 0.000 description 1
239000004698 Polyethylene Substances 0.000 description 1
206010070834 Sensitisation Diseases 0.000 description 1
QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
230000000996 additive effect Effects 0.000 description 1
239000000853 adhesive Substances 0.000 description 1
230000001070 adhesive effect Effects 0.000 description 1
230000002411 adverse Effects 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
150000001408 amides Chemical class 0.000 description 1
239000003963 antioxidant agent Substances 0.000 description 1
125000004429 atom Chemical group 0.000 description 1
RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
239000012965 benzophenone Substances 0.000 description 1
235000019400 benzoyl peroxide Nutrition 0.000 description 1
230000001680 brushing effect Effects 0.000 description 1
229960000846 camphor Drugs 0.000 description 1
229930008380 camphor Natural products 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
229910010293 ceramic material Inorganic materials 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
229910017052 cobalt Inorganic materials 0.000 description 1
239000010941 cobalt Substances 0.000 description 1
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
238000004891 communication Methods 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
238000012937 correction Methods 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
239000006185 dispersion Substances 0.000 description 1
230000005284 excitation Effects 0.000 description 1
230000005281 excited state Effects 0.000 description 1
238000000605 extraction Methods 0.000 description 1
238000001125 extrusion Methods 0.000 description 1
239000000945 filler Substances 0.000 description 1
229910052733 gallium Inorganic materials 0.000 description 1
230000005251 gamma ray Effects 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
230000005484 gravity Effects 0.000 description 1
229910052736 halogen Inorganic materials 0.000 description 1
150000002367 halogens Chemical class 0.000 description 1
125000001072 heteroaryl group Chemical group 0.000 description 1
239000008240 homogeneous mixture Substances 0.000 description 1
229920001519 homopolymer Polymers 0.000 description 1
238000007654 immersion Methods 0.000 description 1
WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910044991 metal oxide Inorganic materials 0.000 description 1
150000004706 metal oxides Chemical class 0.000 description 1
238000001465 metallisation Methods 0.000 description 1
229960000907 methylthioninium chloride Drugs 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
238000001782 photodegradation Methods 0.000 description 1
238000006303 photolysis reaction Methods 0.000 description 1
230000036211 photosensitivity Effects 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
239000000049 pigment Substances 0.000 description 1
229920000728 polyester Polymers 0.000 description 1
229920000573 polyethylene Polymers 0.000 description 1
239000002685 polymerization catalyst Substances 0.000 description 1
239000010970 precious metal Substances 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000010526 radical polymerization reaction Methods 0.000 description 1
238000005201 scrubbing Methods 0.000 description 1
230000008313 sensitization Effects 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
239000002356 single layer Substances 0.000 description 1
229910052717 sulfur Inorganic materials 0.000 description 1
239000011593 sulfur Substances 0.000 description 1
238000012360 testing method Methods 0.000 description 1
239000010409 thin film Substances 0.000 description 1
PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
230000002747 voluntary effect Effects 0.000 description 1
229940075420 xanthine Drugs 0.000 description 1
229910052724 xenon Inorganic materials 0.000 description 1
FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

Physics & Mathematics (AREA)
Spectroscopy & Molecular Physics (AREA)
General Physics & Mathematics (AREA)
Photosensitive Polymer And Photoresist Processing (AREA)
Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

JP59244728A 1983-11-26 1984-11-21 レジストパタ−ンの作製方法及び該方法の実施に適するドライフイルムレジスト Pending JPS60150048A (ja)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
DE3342829.8		1983-11-26
DE19833342829 DE3342829A1 (de)	1983-11-26	1983-11-26	Verfahren zur herstellung von resistmustern und fuer dieses verfahren geeigneter trockenfilmresist
DE3346716.1		1983-12-23

Publications (1)

Publication Number	Publication Date
JPS60150048A true JPS60150048A (ja)	1985-08-07

Family

ID=6215336

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP59244728A Pending JPS60150048A (ja)	1983-11-26	1984-11-21	レジストパタ−ンの作製方法及び該方法の実施に適するドライフイルムレジスト

Country Status (2)

Country	Link
JP (1)	JPS60150048A (de)
DE (1)	DE3342829A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH02251961A (ja) *	1989-03-27	1990-10-09	Matsushita Electric Ind Co Ltd	パターン形成方法
WO2015190594A1 (ja) *	2014-06-13	2015-12-17	シャープ株式会社	感光性樹脂組成物、波長変換基板および発光デバイス

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3346716A1 (de) *	1983-12-23	1985-07-04	Basf Ag, 6700 Ludwigshafen	Verfahren zur herstellung von resistmustern und fuer dieses verfahren geeigneter trockenfilmresist

1983
- 1983-11-26 DE DE19833342829 patent/DE3342829A1/de not_active Withdrawn
1984
- 1984-11-21 JP JP59244728A patent/JPS60150048A/ja active Pending

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH02251961A (ja) *	1989-03-27	1990-10-09	Matsushita Electric Ind Co Ltd	パターン形成方法
WO2015190594A1 (ja) *	2014-06-13	2015-12-17	シャープ株式会社	感光性樹脂組成物、波長変換基板および発光デバイス
US10018912B2 (en)	2014-06-13	2018-07-10	Sharp Kabushiki Kaisha	Photosensitive resin composition, wavelength conversion substrate and light emitting device

Also Published As

Publication number	Publication date
DE3342829A1 (de)	1985-06-05

Publication	Publication Date	Title
US4789622A (en)	1988-12-06	Production of resist images, and a suitable dry film resist
EP0166682B1 (de)	1992-01-08	Verfahren zur positiven Bilderzeugung
KR840001602B1 (ko)	1984-10-11	양성-작용성 감광 조성물
EP0101587B1 (de)	1987-01-21	Positiv arbeitendes Verfahren zur Herstellung von Reliefbildern oder Resistmustern
JPS58114031A (ja)	1983-07-07	レリ−フ像の製造法
US4054635A (en)	1977-10-18	Copolymer of glycidyl methacrylate and allyl glycidyl ether
DE2856675A1 (de)	1979-07-05	Lichthaertbare masse
US4054455A (en)	1977-10-18	Article having a layer containing a copolymer of glycidyl methacrylate and allyl glycidyl ether
JPS5896654A (ja)	1983-06-08	感光性シリコ−ン樹脂組成物
EP0141921A1 (de)	1985-05-22	Durch Strahlung polymerisierbares Gemisch und daraus hergestelltes Kopiermaterial
JPS60150048A (ja)	1985-08-07	レジストパタ−ンの作製方法及び該方法の実施に適するドライフイルムレジスト
JPS61167941A (ja)	1986-07-29	高感度ポリアミドエステルホトレジスト組成物
US4330612A (en)	1982-05-18	Laminate of monolayer film of cyclized butadiene polymer and other photosensitive layer
CA1042732A (en)	1978-11-21	Fabrication of iron oxide pattern and patterns so prepared
US4264715A (en)	1981-04-28	Method of preparing resist pattern
US4210449A (en)	1980-07-01	Radiation sensitive composition comprising copolymer of glycidyl methacrylate and allyl glycidyl ether and diazonium salt of complex halogenide
US4539288A (en)	1985-09-03	Process for the development of relief structures based on radiation-crosslinked polymeric precursors of polymers which are resistant to high temperature
US4056393A (en)	1977-11-01	Method of recording information using a copolymer of glycidyl methacrylate and allyl glycidyl ether
US4816377A (en)	1989-03-28	Photolithographic method producing sub-micron patterns in the manufacture of electronic microcircuits
DE3722749A1 (de)	1988-01-21	Verfahren zur herstellung einer gedruckten leiterplatte
US4071671A (en)	1978-01-31	Copolymer of glycidyl methacrylate and allyl glycidyl ether
US4054451A (en)	1977-10-18	Method of polymerizing a copolymer of glycidyl methacrylate and allyl glycidyl ether
JPS59202462A (ja)	1984-11-16	ネガ型レジストのパタ−ン形成方法
US4054452A (en)	1977-10-18	Method of imaging a layer containing copolymer of glycidyl methacrylate and allyl glycidyl ether
JPS6048023B2 (ja)	1985-10-24	ポジ型レジスト