JPS60186036A - 半導体基板の製造方法 - Google Patents
半導体基板の製造方法Info
- Publication number
- JPS60186036A JPS60186036A JP59040544A JP4054484A JPS60186036A JP S60186036 A JPS60186036 A JP S60186036A JP 59040544 A JP59040544 A JP 59040544A JP 4054484 A JP4054484 A JP 4054484A JP S60186036 A JPS60186036 A JP S60186036A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating film
- metal
- semiconductor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59040544A JPS60186036A (ja) | 1984-03-05 | 1984-03-05 | 半導体基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59040544A JPS60186036A (ja) | 1984-03-05 | 1984-03-05 | 半導体基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60186036A true JPS60186036A (ja) | 1985-09-21 |
| JPH0580828B2 JPH0580828B2 (fr) | 1993-11-10 |
Family
ID=12583388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59040544A Granted JPS60186036A (ja) | 1984-03-05 | 1984-03-05 | 半導体基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60186036A (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4002673A1 (de) * | 1989-01-31 | 1990-08-02 | Mitsubishi Electric Corp | Halbleiteranordnung und verfahren zu ihrer herstellung |
| JPH02303141A (ja) * | 1989-05-18 | 1990-12-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH071275A (ja) * | 1993-06-21 | 1995-01-06 | Sumitomo Metal Mining Co Ltd | 電解用アノードの搬送装置 |
| JP2007514321A (ja) * | 2003-12-10 | 2007-05-31 | ザ、リージェンツ、オブ、ザ、ユニバーシティ、オブ、カリフォルニア | ミックスド・シグナル集積回路のための低クロストーク回路基板 |
-
1984
- 1984-03-05 JP JP59040544A patent/JPS60186036A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4002673A1 (de) * | 1989-01-31 | 1990-08-02 | Mitsubishi Electric Corp | Halbleiteranordnung und verfahren zu ihrer herstellung |
| DE4002673C2 (de) * | 1989-01-31 | 1998-01-22 | Mitsubishi Electric Corp | Verfahren zur Herstellung einer Halbleiteranordnung |
| JPH02303141A (ja) * | 1989-05-18 | 1990-12-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH071275A (ja) * | 1993-06-21 | 1995-01-06 | Sumitomo Metal Mining Co Ltd | 電解用アノードの搬送装置 |
| JP2007514321A (ja) * | 2003-12-10 | 2007-05-31 | ザ、リージェンツ、オブ、ザ、ユニバーシティ、オブ、カリフォルニア | ミックスド・シグナル集積回路のための低クロストーク回路基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0580828B2 (fr) | 1993-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6344663B1 (en) | Silicon carbide CMOS devices | |
| US4378628A (en) | Cobalt silicide metallization for semiconductor integrated circuits | |
| US4757028A (en) | Process for preparing a silicon carbide device | |
| JP4858791B2 (ja) | 半導体装置およびその製造方法 | |
| US4819037A (en) | Semiconductor device | |
| KR100406247B1 (ko) | 옴접촉체를제조하는방법및이러한옴접촉체를구비한반도체소자 | |
| WO1997039485A9 (fr) | Cmos au carbure de silicium et procede de fabrication | |
| JP4593115B2 (ja) | SiCOI基板を備えたショットキーパワーダイオード、およびその製造方法 | |
| JP3108447B2 (ja) | 半導体装置及びその製造方法 | |
| JPS60186036A (ja) | 半導体基板の製造方法 | |
| JP2916524B2 (ja) | 薄膜半導体装置 | |
| JPS62245627A (ja) | 液相エピタキシヤル法 | |
| US5021358A (en) | Semiconductor fabrication process using sacrificial oxidation to reduce tunnel formation during tungsten deposition | |
| US4635089A (en) | MIS-integrated semiconductor device | |
| JPS621270B2 (fr) | ||
| WO1991001569A1 (fr) | Dispositif a semi-conducteurs et procede de production | |
| JP2585860B2 (ja) | 半導体装置およびその作製方法 | |
| JPH061836B2 (ja) | 薄膜トランジスタ | |
| JPH0936370A (ja) | コプラナ型薄膜トランジスタの製造方法 | |
| JPH0556849B2 (fr) | ||
| JPS61166171A (ja) | 半導体集積回路装置 | |
| JPS613470A (ja) | 半導体装置 | |
| JPS587875A (ja) | ダイオ−ドおよびその製造方法 | |
| JPH03101231A (ja) | 半導体装置及びその形成方法 | |
| JPS59189651A (ja) | 半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |