JPS60245257A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS60245257A JPS60245257A JP59100586A JP10058684A JPS60245257A JP S60245257 A JPS60245257 A JP S60245257A JP 59100586 A JP59100586 A JP 59100586A JP 10058684 A JP10058684 A JP 10058684A JP S60245257 A JPS60245257 A JP S60245257A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- semiconductor substrate
- cracks
- layer
- passivation film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59100586A JPS60245257A (ja) | 1984-05-21 | 1984-05-21 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59100586A JPS60245257A (ja) | 1984-05-21 | 1984-05-21 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60245257A true JPS60245257A (ja) | 1985-12-05 |
| JPH0224021B2 JPH0224021B2 (fr) | 1990-05-28 |
Family
ID=14277984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59100586A Granted JPS60245257A (ja) | 1984-05-21 | 1984-05-21 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60245257A (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61121456A (ja) * | 1984-11-19 | 1986-06-09 | Nippon Denso Co Ltd | 半導体素子の突起電極の形成方法 |
| US5393696A (en) * | 1990-12-03 | 1995-02-28 | Grumman Aerosace Corp. | Method for forming multilayer indium bump contacts |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5133562A (en) * | 1974-09-17 | 1976-03-22 | Tokyo Shibaura Electric Co | Handotaisochi no seizohoho |
-
1984
- 1984-05-21 JP JP59100586A patent/JPS60245257A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5133562A (en) * | 1974-09-17 | 1976-03-22 | Tokyo Shibaura Electric Co | Handotaisochi no seizohoho |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61121456A (ja) * | 1984-11-19 | 1986-06-09 | Nippon Denso Co Ltd | 半導体素子の突起電極の形成方法 |
| US5393696A (en) * | 1990-12-03 | 1995-02-28 | Grumman Aerosace Corp. | Method for forming multilayer indium bump contacts |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0224021B2 (fr) | 1990-05-28 |
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