JPS60257529A - Manufacture of resin sealed type semiconductor device - Google Patents
Manufacture of resin sealed type semiconductor deviceInfo
- Publication number
- JPS60257529A JPS60257529A JP59114018A JP11401884A JPS60257529A JP S60257529 A JPS60257529 A JP S60257529A JP 59114018 A JP59114018 A JP 59114018A JP 11401884 A JP11401884 A JP 11401884A JP S60257529 A JPS60257529 A JP S60257529A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- space
- support plate
- resin coating
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/016—Manufacture or treatment using moulds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01515—Forming coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電力用トランジスタ、ダイオード等の樹脂封
止型半導体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing resin-sealed semiconductor devices such as power transistors and diodes.
従来の技術
従来の一般的な樹脂封止型パワートランジスタにおいて
は、トランジスタチップが固着されている放熱支持板の
裏面には樹脂層が形成されていない。このため、このパ
ワートランジスタを外部放熱体に取付けるに際しては、
これらの間の電気的絶縁のために、上記放熱支持板の裏
面と外部放熱体との間に比較的熱伝導性の良い絶縁物で
あるマイカ薄板等を介在させなければならず、パワート
ランジスタの取付は作業が煩雑になった。2. Description of the Related Art In a conventional general resin-sealed power transistor, no resin layer is formed on the back surface of a heat dissipation support plate to which a transistor chip is fixed. Therefore, when installing this power transistor on an external heat sink,
In order to electrically insulate these, a mica thin plate or the like, which is an insulator with relatively good thermal conductivity, must be interposed between the back surface of the heat dissipation support plate and the external heat dissipation body. Installation became complicated.
上述の如き欠点を解決するために、例えば、特開昭５７
−１４７２６０号公報に開示されているように、放熱支
持板の裏面にも薄い封止樹脂層（厚さ数百μｍ）を形成
し、マイカ薄板等を不要にする構造が提案されている。In order to solve the above-mentioned drawbacks, for example,
As disclosed in Japanese Patent No. 147260, a structure has been proposed in which a thin sealing resin layer (thickness of several hundred μm) is also formed on the back surface of the heat dissipation support plate, thereby eliminating the need for a mica thin plate or the like.
第１１図及び第１２図は上述の如き従来のトランジスタ
及びその製造方法を示すものである。この第１１図及び
第１２図において、（１）は放熱支持板、（２）はリー
ド、（３）はパワートランジスタチップ、（４）はチッ
プ保護用樹脂、（５）は封止樹脂体、（６）は上部金型
、（７）は下部金型、（８）は上部金型（６）と下部金
型（７）が型締めされることによって形成される空所（
９）に封止樹脂を圧入するための注入孔、（１０）は取
付孔、圓（１２１はリードフレームを構成するだめの連
続部である。なお、第１２図において、連続部ｅｌｌ）
（１２１は最終的には切り落される。FIGS. 11 and 12 show the conventional transistor and its manufacturing method as described above. 11 and 12, (1) is a heat dissipation support plate, (2) is a lead, (3) is a power transistor chip, (4) is a chip protection resin, (5) is a sealing resin body, (6) is the upper mold, (7) is the lower mold, and (8) is the void formed by clamping the upper mold (6) and the lower mold (7).
9) is an injection hole for press-fitting the sealing resin, (10) is a mounting hole, and (121 is a continuous part that makes up the lead frame. In Fig. 12, continuous part ell)
(121 will eventually be cut off.
発明が解決しようとする問題点
ところで、チップ（３）が装着されている支持板（１）
の一方の主表面側の樹脂被覆部（５ａ）はチップ（３）
を保護するために必然的に厚く形成され、支持板（１）
の他方の主表面側の樹脂被覆部（５ｂ）は放熱効果を良
くするために薄く形成される。このため、注入孔（８）
から例えばトランスファー成形法で樹脂を注入した時に
、支持板（１）の下側に樹脂が円滑に流入せず、未充填
部分又は絶縁耐力の低い部分が生じるおそれがあった。Problems to be Solved by the Invention By the way, the support plate (1) on which the chip (3) is attached
The resin coating part (5a) on one main surface side of the chip (3)
The supporting plate (1) is necessarily formed thickly to protect the
The resin coating portion (5b) on the other main surface side is formed thin in order to improve the heat dissipation effect. For this reason, the injection hole (8)
For example, when resin is injected using a transfer molding method, the resin does not flow smoothly into the lower side of the support plate (1), and there is a risk that an unfilled portion or a portion with low dielectric strength may be formed.
今、パワートランジスタを例にとって説明したが、ダイ
オード等の別の半導体装置においても同様な問題がある
。Although the explanation has been given using a power transistor as an example, similar problems exist in other semiconductor devices such as diodes.
そこで、本発明の目的は、放熱支持板のチップ装着面と
反対の面に薄い樹脂被覆部を良好に形成することが出来
る樹脂封止型半導体装置の製造方法を提供することにあ
る。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for manufacturing a resin-sealed semiconductor device that can satisfactorily form a thin resin coating on the surface of a heat dissipation support plate opposite to the chip mounting surface.
問題点を解決するための手段
上記目的を達成するための本発明は、放熱機能を有する
ように形成され且つ一端部近傍に切欠部又は孔を有して
いる金属性支持板と、前記支持板の一方の主表面上に装
着された半導体チップと、前記チップに接続されたリー
ドと、前記支持板、前記チップ、及び前記リードの一部
を被覆する絶縁性樹脂被覆体とから成り、且つ前記支持
板の一方の主表面側の樹脂被覆部が他方の主表面側の樹
脂被覆部よりも厚くなるように前記樹脂被覆体が形成さ
れ、且つ前記切欠部又は孔の部分に取付用切欠部又は孔
が生じるように前記樹脂被覆体が形成される樹脂封止型
半導体装置の製造方法において、前記一方の主表面側の
樹脂被覆部の前記チップを被覆する部分及び前記取付用
切欠部又は孔の近傍を被覆する部分よりも薄い被覆部分
を前記支時板の一端近傍から前記チップ装着部までの間
に生じさせるための突出部を殺げた樹脂封止用型を使用
し、前記支持板の一端部近傍側の注入孔から前記樹脂封
止用型の成形空間内に液状の樹脂を前記樹脂被覆体を成
形することを特徴とする樹脂封止型半導体装置の製造方
法に係わるものである。Means for Solving the Problems To achieve the above objects, the present invention provides a metal support plate formed to have a heat dissipation function and having a notch or hole near one end, and the support plate. a semiconductor chip mounted on one main surface of the semiconductor chip; leads connected to the chip; and an insulating resin covering covering a portion of the support plate, the chip, and the leads; The resin coating is formed such that the resin coating on one main surface side of the support plate is thicker than the resin coating on the other main surface side, and a mounting notch or hole is formed in the notch or hole. In the method for manufacturing a resin-sealed semiconductor device in which the resin coating is formed so as to form a hole, a portion of the resin coating on the one main surface side that covers the chip and a portion of the mounting notch or hole are provided. One end of the support plate is molded using a resin sealing mold that has no protrusion to create a thinner covering part between the vicinity of one end of the support plate and the chip mounting part than the part covering the surrounding area. The present invention relates to a method for manufacturing a resin-sealed semiconductor device, characterized in that the resin coating is molded by applying liquid resin into the molding space of the resin-sealing mold from an injection hole near the part.
作用
上記発明において、突出部を有する樹脂封止用型を使用
すると、この突出部はチップが装着されている支持板の
一方の主表面側に対する樹脂の流人を抑制する。このた
め、支持板の他方の主表面側に対する樹脂の流れが強く
なり、薄い樹脂被覆部であっても、良好に形成すること
が出来る。Effect: In the above invention, when a resin sealing mold having a protrusion is used, the protrusion prevents the resin from flowing to one main surface side of the support plate on which the chip is mounted. Therefore, the flow of the resin toward the other main surface of the support plate becomes stronger, and even a thin resin coating can be formed satisfactorily.
１
：・１ 実施例
次に、第１図〜第１１図を参照して本発明の実施例に係
わる樹脂封止型トランジスタ及びその製造方法について
述べる。1:.1 Example Next, a resin-sealed transistor and a manufacturing method thereof according to an example of the present invention will be described with reference to FIGS. 1 to 11.
第１図、第２図、及び第３図は完成したトランジスタを
示し、第４図はリードフレームにチップを装着した状態
を示し、第５図は樹脂封止が完成したリードフレームを
示し、第６図は金型を示し、第７図〜第１０図は金型を
使用１−でトランスファー成形法で樹脂被覆体を形成す
る工程を示す。1, 2, and 3 show the completed transistor, FIG. 4 shows the chip mounted on the lead frame, FIG. 5 shows the lead frame with resin sealing completed, and FIG. FIG. 6 shows a mold, and FIGS. 7 to 10 show the process of forming a resin coating by transfer molding using the mold.
第１図〜第３図のトランジスタを形成する際には、まず
、第４図に示すリードフレームと呼ばれる半導体装置組
立体を用意する。第４図において、０υはニッケル被覆
銅板から成る放熱支持板、（２２ａ）（２２ｂ） （２
２ｃ）は同じ材料から成る外部リードで、（２２ａ）が
ベースリード、（２２ｂ）がコレクタリード、（２２ｃ
）がエミッタリードである。（２３）はシリコンパワー
トランジスタチップで、上面にはベース電極及びエミッ
タ電極が、下面にはコレクタ電極がそれぞれ形成されて
いる。このチップ（２３）は下面において放熱支持板（
２１）に半田（図示せず）により固着されている。（２
４ａ） （２４ｃ）はアルミちラム線から成る内部リー
ドであり、チップ（２（８）のベース電極とベースリー
ド（２２ａ）との間、及びチップ（２３）のエミッタ電
極とエミッタリード（２２Ｃ）との間に配設されている
。（２５）はジャンクションコーティングレジンと呼ば
れるチップ保護用のシリコン樹脂から成る保護層である
。（２６）（Ｊηはタイバーと呼ばれるリード同志の連
結部である。放熱支持板（２υの一端部（２１ａ）には
Ｕ字状の切欠部内が形成されている。なお、この切欠部
（至）の代りに放熱支持板（２１）に孔を形成すること
もよく行われている。第４図にはリードフレームの内の
１個のパワートランジスタを示しているが、実際には単
一のリードフレームは多数のトランジスタを含む。When forming the transistors shown in FIGS. 1 to 3, first, a semiconductor device assembly called a lead frame shown in FIG. 4 is prepared. In Fig. 4, 0υ is a heat dissipation support plate made of a nickel-coated copper plate, (22a) (22b) (2
2c) are external leads made of the same material, (22a) is the base lead, (22b) is the collector lead, (22c)
) is the emitter lead. (23) is a silicon power transistor chip, with a base electrode and an emitter electrode formed on the upper surface, and a collector electrode formed on the lower surface. This chip (23) has a heat dissipation support plate (
21) by solder (not shown). (2
4a) (24c) is an internal lead made of aluminum wire, which is connected between the base electrode of the chip (2 (8)) and the base lead (22a), and between the emitter electrode of the chip (23) and the emitter lead (22C). (25) is a protective layer made of silicone resin for chip protection called junction coating resin. (26) (Jη is a connection part between leads called a tie bar. Heat dissipation A U-shaped notch is formed in one end (21a) of the support plate (2υ).Instead of this notch, it is also common practice to form a hole in the heat dissipation support plate (21). Although FIG. 4 shows one power transistor in a lead frame, in reality a single lead frame contains multiple transistors.
本実施例では、第４図に示すリードフレームに、第５図
に示す如く樹脂被覆体Ｉ３ηを設け、しかる後、連結部
＠（２）を切り落すことによって第１図〜第３図の樹脂
封止型トランジスタを完成させる。第１図〜第３図から
明らかな如く、支持板（２１）の一方の主表面（上面）
側には比較的厚い樹脂被覆部（３７ａ）が股げられ、他
方の主表面（下面）側には薄い樹脂被覆部（３７ｂ）が
設けられている。上側の樹脂被覆部（３７ａ）は、チッ
プ□□□、保護層（イ）、内部ＩＪ −ド（２４ａ）
（２４ｂ）を覆う最も厚い主被覆部分（４１）と、切欠
部（２８）に対応して設けられた取付孔０湧の近傍を被
覆部分（４２１と、上記主被覆部分（４ｊ）と取付孔近
傍被覆部分（４２）との間にこれ等よりも薄く形成され
た薄い被覆部分（４３とを有する。この結果、樹脂被覆
体０７）の表面には薄い被覆部分（４りに対応して溝（
至）が形成されている。なお、溝（２）は、取付孔Ｇ９
とチップ（２３）とを結ぶ直線上には設けられていない
。In this example, the resin coating I3η as shown in FIG. 5 is provided on the lead frame shown in FIG. Complete the sealed transistor. As is clear from FIGS. 1 to 3, one main surface (top surface) of the support plate (21)
A relatively thick resin coating part (37a) is provided on one side, and a thin resin coating part (37b) is provided on the other main surface (lower surface) side. The upper resin coating part (37a) includes the chip □□□, the protective layer (a), and the internal IJ-do (24a).
(24b), the thickest main covering part (41) that covers the notch (28), and the covering part (421) that covers the vicinity of the mounting hole 0 provided corresponding to the notch (28), and the main covering part (4j) and the mounting hole. There is a thin covering part (43) formed thinner than these between the neighboring covering part (42). As a result, the surface of the resin covering body 07 has grooves corresponding to the thin covering part (4). (
) is formed. Note that the groove (2) is the mounting hole G9.
and the chip (23).
第１図〜第３図及び第５図に示す樹脂被覆体（１３ｎは
、第６図に示す上部金型−と下部金型□□□とを第７図
及び第８図に示す如く組み合せ、ここに、第９図及び第
１０図に示す如く樹脂を注入することにより形成する。The resin coating shown in FIGS. 1 to 3 and 5 (13n is a combination of the upper mold shown in FIG. 6 and the lower mold □□□ as shown in FIGS. 7 and 8, This is formed by injecting resin as shown in FIGS. 9 and 10.
第６図〜第１Ｏ図において、Ｃ３１１は、上部金型−と
下部金型（７）が型締めされることによって形成される
空所（３２１に封止樹脂を圧入するだめの注入孔である
。（２９ａ）は第１図に示した取付孔０９を形成するた
めに上部金型−から突出した円柱状ピンで、放熱支持板
０］）の切欠部（２印を貫通している。（ｚｃ＋ｂ）は
上部金型（イ）から突出した仕切り状の突出部であり、
第１図の溝□□□を形成するものである。なお、仕切り
状の突出部（２９ｂ） ＆’！その中央に樹脂の流れを
許す溝Ｃ３５１を有して℃・る。第４図に示すリードフ
レームを金型＠Ｇ■に入れる際に１１、第６図の矢印（
ト）（ロ）で示すように、上部金型−と下部金型例とを
合せて型締めする。この時、溝（３６ａ）でリード（２
２ａ）を溝（３６ｂ）でリート°（２２ｂ）を溝（３６
ｃ）で肝ド（２２ｃ）をそれぞれ挾持する。この結果、
第７図及び第８図に示す如く、金型＠（至）で形成され
た空所Ｇ２の中に支持板Ｇｌｌが浮（・た状態に配置さ
れる。また、第１図〜第３図に示す樹月旨被覆体（３？
）を得るために、上部空所（３２ａ）カー広くなり、下
部空所（３２ｂ）が狭くなるように配置される。し 、
・かじ、本発明に従ってチップ（２３）の上の広℃・空
所（３２ａ）の入口近傍に樹脂の流れの強さを抑佑１１
するための突出部廼が設けられているので、注入孔６η
力・ら注入した樹脂は狭い下部空所（３２ｂ）にも比較
的良好に浸入する。In FIG. 6 to FIG. 1O, C311 is an injection hole for press-fitting the sealing resin into the cavity (321) formed by clamping the upper mold and the lower mold (7). (29a) is a cylindrical pin that protrudes from the upper mold to form the mounting hole 09 shown in Fig. 1, and passes through the notch (marked 2) of the heat dissipation support plate 0. zc+b) is a partition-like protrusion protruding from the upper mold (a),
This is to form the groove □□□ shown in FIG. In addition, the partition-shaped protrusion (29b) &'! It has a groove C351 in the center that allows the resin to flow. When putting the lead frame shown in Fig. 4 into the mold @ G
g) As shown in (b), the upper mold and the lower mold are combined and clamped. At this time, the lead (2
2a) with the groove (36b) and the leet (22b) with the groove (36b).
Clamp the liver (22c) with c). As a result,
As shown in FIGS. 7 and 8, the support plate Gll is placed in a floating state in the cavity G2 formed by the mold. The Jugetsuji cover shown in (3?
), the upper cavity (32a) is arranged to be wider and the lower cavity (32b) to be narrower. death ,
・According to the present invention, the strength of the resin flow is suppressed near the entrance of the wide space (32a) above the chip (23).
Since a protruding part is provided for filling the injection hole 6η
The injected resin relatively well penetrates into the narrow lower cavity (32b).
空所（３２１に対する樹脂の注入は、公知のトランスフ
ァー成型法に基づいて、熱硬化性エポキシ樹脂をポット
内で軟化させ、加圧して金型（２９）翰内に注入する。The resin is injected into the cavity (321) by softening the thermosetting epoxy resin in a pot and injecting it into the mold (29) under pressure based on a known transfer molding method.
これにより、第７図に示す注入子し０９カ瓢ら液状の樹
脂が注入され、空所０２の全部カー樹月旨で充填される
。金型（２９） Ｃｏｏ）は樹脂を熱硬化させる温度（
１５００〜２００°程度）に加熱されて〜）るので、充
填された樹脂は短時間（数分）の内に熱硬イヒし、第９
図及び第１０図に示す樹脂被覆体ＯＤとなる。As a result, liquid resin is injected through the injection device 09 shown in FIG. 7, and the entire cavity 02 is filled with resin. The mold (29) Coo) is set at a temperature (
Since the resin is heated to about 1,500 to 200 degrees (approximately 1,500 to 200
The resin coating OD shown in FIG. 1 and FIG. 10 is obtained.
なお、完全に熱硬化させるために、金ｍ （２！ｌｉｔ
（３０）力・らリードフレームを取り出した後に、更
に長時間の熱処理を行う。In addition, in order to completely heat cure, gold m (2! lit
(30) After the lead frame is taken out, heat treatment is performed for a longer time.
上述の如きトランスファー成形法による樹脂被覆体Ｃ１
での形成において、第６図、第７図及び第９図で矢印（
４Ｇで示す方向性を有して液状の樹脂を加圧注入すると
、比較的広い上部空所（３２ａ）に樹脂が容易に充填さ
れようとする。し力・し、本実施例では、矢印（４（ｌ
で示す樹脂の注入方向に交差するように突出部（２９ｂ
）が設けられて０るので、樹脂の流れが抑制され、この
結果、支持板シ９０下但１ｊの狭い空所（３２ｂ）にお
ける樹脂の流れカー相対的に強められる。これＫより、
上部空所（３２ａ）と下部空所（３２ｂ）での封止の流
れのノ（ランス力を良くなり、従来あった下部空所（３
２ｂ）の未充填状態力’−ｔｈとんと見られなくなった
。即ち、下部空所（３２ｂ）に形成される薄い樹脂被覆
部（３７ｂ）の絶縁不良と℃・う問題を解決できた。Resin coated body C1 by transfer molding method as described above
6, 7 and 9, the arrow (
When liquid resin is injected under pressure with the directionality indicated by 4G, the relatively wide upper space (32a) tends to be easily filled with the resin. In this example, the arrow (4(l)
The protruding portion (29b
) is provided, the flow of resin is suppressed, and as a result, the flow of resin in the narrow space (32b) at the bottom of the support plate 90 is relatively strengthened. This is from K.
The flow of sealing between the upper cavity (32a) and the lower cavity (32b) is improved (lance force is improved, and the conventional lower cavity (32b) is
2b) The unfilled state force'-th has completely disappeared. That is, the problem of poor insulation and temperature fluctuation of the thin resin coating (37b) formed in the lower cavity (32b) can be solved.
上部金型Ｑ９）の突出部（２９ｂ）を、封止樹脂の主た
る流れ方向（矢印（４Ｇの方向）に直交する仕切り状罠
配設することにより、樹脂の流れを効果的に押えている
が、その高さや位置はモールド金型の取り個数やパッケ
ージの大きさ等によりそれぞれ最適値が異なる。但し、
注入孔０１）から見て封止樹脂の主たる流れ方向にビン
（２９ａ）があるため、ピン（２９ａ）も封止樹脂（３
ηの流れを押えるように働（。The flow of the resin is effectively suppressed by arranging the protrusion (29b) of the upper mold Q9) in a partition-like trap perpendicular to the main flow direction of the sealing resin (direction of arrow (4G)). , the optimum height and position differ depending on the number of molds, the size of the package, etc. However,
Since the bottle (29a) is located in the main flow direction of the sealing resin when viewed from the injection hole 01), the pin (29a) is also aligned with the sealing resin (3).
It works to suppress the flow of η (.
従って、溝Ｃ３５＋で２分割された突出部（２９ｂ）を
一体化したものとすると、注入孔ｃ３１）とビン（２９
ａ）を結ぶライン上付近のピン（２９ａ）に対して注入
孔Ｃ３１）と反対側において、上部空所（３２ａ）にお
いても封止ｌ□： 樹脂の未充填が発生し易い。しかし
、本実施例では、第６図から最も明らかな如く、矢印顛
とピン（２９ａ）とを結ぶ直線の延長線上に溝（ハ）が
設けられているので、この溝田がビン（２９ａ）による
樹脂の流れの押え作用を相殺するように働き、上部空所
（３２ａ）に良好に樹脂が充填される。Therefore, if the protrusion (29b) divided into two by the groove C35+ is integrated, the injection hole c31) and the bottle (29b) are integrated.
Sealing l□ also in the upper cavity (32a) on the side opposite to the injection hole C31) with respect to the pin (29a) near the line connecting a): unfilling of resin is likely to occur. However, in this embodiment, as is most obvious from FIG. 6, the groove (C) is provided on the extension of the straight line connecting the arrow frame and the pin (29a), so that the groove is not covered by the bottle (29a). It works to offset the suppressing effect on the flow of resin, and the upper space (32a) is well filled with resin.
ところで、第１図〜第３図に示すトランジスタの取付け
は、通常、外部の放熱作用を有する取付板に下部樹脂被
覆部（３７ｂ）を当てるようになし、取付孔（３優にネ
ジ又はボルト等の取付部材を貫通させ、これにより取付
板に固定することによって行う。この様な取付時に、ネ
ジ又はボルト等の頭又はナツトが取付孔艷の近傍を強く
押圧すると、クランクが生じるので、取付孔（３９の近
傍をあまり薄くすることは出来ない。このため、本実施
例では、取付孔Ｃ３ｇ１の近傍の被覆部分（４りは取付
に支障がない厚さに形成され、本発明に従う溝間におけ
る薄い被覆部分０９は、取付孔Ｇ湧の近傍の被覆部分（
４りよりも薄く形成されている。Incidentally, the transistors shown in FIGS. 1 to 3 are normally mounted by placing the lower resin coating part (37b) against a mounting plate that has an external heat dissipation function, and using mounting holes (3 or more screws, bolts, etc.). This is done by passing the mounting member through the mounting member and fixing it to the mounting plate.During this type of mounting, if the head of a screw or bolt or nut strongly presses the vicinity of the mounting hole, a crank will occur. (It is not possible to make the area near 39 very thin. Therefore, in this embodiment, the covering portion near the mounting hole C3g1 (4) is formed to a thickness that does not hinder the installation, and the area between the grooves according to the present invention is The thin covering part 09 is the covering part near the mounting hole G (
It is formed thinner than 4.
変形例
本発明は、上述の実施例に限定されるものでなく、種々
の変形が可能なものである。例えば、第１４図に示す如
く、取付孔Ｃ３’ｌを囲む部分に比較的厚い被覆部分（
４２）を円筒状に設け、ここを囲むように薄い被覆部分
（４（を設けてもよい。この際、主被覆部分（４１）は
勿論厚く形成する。また、取付孔（３９）が取付孔Ｃ３
９１を切欠部（溝又は凹部）としてもよい。Modifications The present invention is not limited to the above-described embodiments, but can be modified in various ways. For example, as shown in FIG. 14, a relatively thick covering part (
42) may be provided in a cylindrical shape, and a thin covering portion (4) may be provided to surround this. In this case, the main covering portion (41) is of course formed thickly. Also, the mounting hole (39) is C3
91 may be a notch (groove or recess).
また、ダイオードにも適用可能である。It is also applicable to diodes.
発明の効果
上述から明らかな如く、本発明によれば支持板のチップ
を保持する側の面を被覆するための型の空間に突出部を
設けたので、樹脂の流れが抑制され、支持板の他方の主
表面側にも良好に樹脂が流入する。従って、樹脂被覆体
の全部を良好に形成することが出来る。Effects of the Invention As is clear from the above, according to the present invention, since a protrusion is provided in the mold space for covering the chip-holding side of the support plate, the flow of resin is suppressed and the support plate is The resin flows well into the other main surface side as well. Therefore, the entire resin coating can be formed satisfactorily.
第１図は本発明の実施例に係わるトランジスタを示す斜
視図、第２図は第１図のトランジスタの平面図、第３図
は第２図のト］線断面図、第４図は第１図のトランジス
タを形成するためのリードフレームを示す斜視図、第５
図は第４図のリードフレームに樹脂被覆体を設けた状態
を示す斜視図、第６図は金型を示す斜視図、第７図は金
型にリードフレームを入れた状態を示す第２図の■−■
線に相当する部分の断面図、第８図は金型Ｋ １．１−
ドフレームを入れた状態を示す第２図のＩ−Ｉ線に相当
する部分の断面図、第９図、及び第１０図は第７図及び
第８図の金型に樹脂を充填した状態をそれぞれ示す断面
図、第１１図は従来のトランジスタを示す斜視図、第１
２図は第１１図のトランジスタを形成するために金型に
リードフレームを入れて樹脂を充填した状態を示す断面
図、第１３図は本発明の変形例を示す斜視図である。
Ｑυ・・・放熱支持板、（２２ａ）（２２ｂＸ２２ｃ）
−リード、＠・・・トランジスタチップ、（２４ａ）
（２４ｃ）・・・内部リード、（２）・・・保護層、（
２慎・・・切欠部、Ｃ２９・・・上部金型、（２９ａ）
・・・ビン、（２９ｂ）・・・突出部、（至）・・・下
部金型、Ｃ３１）・・・注入孔、Ｃ３３・・・空所、（
３２ａ）・・・上部空所、（３２ｂ）ｑ ・・・下部空
所、０η・・・樹脂被覆体、（３７ａ）・・・一方の樹
脂
脂被覆部、（３７ｂ）・・・他方の樹脂被覆部、（支）
・・・溝、Ｇ！！・・・取付孔、（４１）・・・主被覆
部分、■・・・取付孔近傍被覆部分、（４３・・・薄い
被覆部分。
代理人 高野則次
第７図
第８図
第９図
第１０図1 is a perspective view showing a transistor according to an embodiment of the present invention, FIG. 2 is a plan view of the transistor shown in FIG. A perspective view showing a lead frame for forming the transistor shown in FIG.
The figure is a perspective view showing a state in which the resin coating is provided on the lead frame shown in Fig. 4, Fig. 6 is a perspective view showing the mold, and Fig. 7 is a second view showing the state in which the lead frame is placed in the mold. ■－■
A cross-sectional view of the part corresponding to the line, FIG. 8 is the mold K1.1-
A sectional view of the part corresponding to the line I-I in Fig. 2 showing the state in which the mold is inserted, and Figs. 9 and 10 show the state in which the mold shown in Figs. 7 and 8 is filled with resin. FIG. 11 is a cross-sectional view showing a conventional transistor, and FIG. 1 is a perspective view showing a conventional transistor.
2 is a sectional view showing a state in which a lead frame is placed in a mold and filled with resin to form the transistor shown in FIG. 11, and FIG. 13 is a perspective view showing a modification of the present invention. Qυ... Heat radiation support plate, (22a) (22bX22c)
-Lead, @...transistor chip, (24a)
(24c)...internal lead, (2)...protective layer, (
2 Shin... Notch, C29... Upper mold, (29a)
... bottle, (29b) ... protrusion, (to) ... lower mold, C31) ... injection hole, C33 ... void, (
32a)...Upper space, (32b)q...Lower space, 0η...Resin coating, (37a)...One resin fat coating, (37b)...Other resin Covering part, (support)
... Groove, G! ! ...Mounting hole, (41)... Main covering part, ■... Covering part near the mounting hole, (43... Thin covering part. Agent Noriyuki Takano 7 Figure 8 Figure 9 Figure 10 figure
Claims (1)
傍に切欠部又は孔を有している金属製支持板と、前記支
持板の一方の主表面上に装着された半導体チップと、前
記チップに接続されたリードと、前記支持板、前記チッ
プ、及び前記リードの一部を被覆するＰ２縁性樹脂被覆
体とから成り、且つ前記支持板の一方の主表面側の樹脂
被覆部が他方の主表面側の樹脂被覆部よりも厚（なるよ
うに前記樹脂被覆体が形成され、且つ前記切欠部又は孔
の部分に取付用切欠部又は孔が生じるように前記樹脂被
覆体が形成される樹脂封止型半導体装置の製造方法にお
いて、 前記一方の主表面側の樹脂被覆部の前記チップを被覆す
る部分及び前記取付用切欠部又は孔の近傍を被覆する部
分よりも薄い被覆部分を前記支持板の一端近傍から前記
チップの装着部までの間に生じさせるための突出部を設
けた樹脂封止用型を使用し、前記支持板の一端部近傍側
の注入孔から前記樹脂封止用型の成形空間内に液状の樹
脂を注入して前記樹脂被覆体を成形することを特徴とす
る樹脂封止型半導体装置の製造方法。 （２１前記樹脂被覆体の成形は、トランスファー成形法
で成形することである特許請求の範囲第１項記載の半導
体装置の製造方法。[Claims] fi+ A metal support plate formed to have a heat dissipation function and having a notch or hole near one end, and a semiconductor chip mounted on one main surface of the support plate. , a lead connected to the chip, and a P2 edge resin coating covering a portion of the support plate, the chip, and the lead, and a resin coating on one main surface side of the support plate. The resin coating is formed such that the resin coating is thicker than the resin coating on the other main surface side, and the resin coating is formed such that a mounting notch or hole is formed in the notch or hole. In the method for manufacturing a resin-sealed semiconductor device, the coating portion is thinner than the portion of the resin coating portion on the one main surface side that covers the chip and the portion that covers the vicinity of the mounting notch or hole. A mold for resin sealing is provided with a protrusion for producing a gap between the vicinity of one end of the support plate and the mounting portion of the chip, and the resin seal is inserted from the injection hole in the vicinity of the one end of the support plate. A method for manufacturing a resin-encapsulated semiconductor device, characterized in that the resin coating is molded by injecting a liquid resin into a molding space of a mold for molding. (21) The resin coating is molded by transfer molding. 2. A method of manufacturing a semiconductor device according to claim 1, which comprises molding a semiconductor device by molding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59114018A JPS60257529A (en) | 1984-06-04 | 1984-06-04 | Manufacture of resin sealed type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59114018A JPS60257529A (en) | 1984-06-04 | 1984-06-04 | Manufacture of resin sealed type semiconductor device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8942289A Division JPH01302729A (en) | 1989-04-07 | 1989-04-07 | Manufacture of plastic sealed type semiconductor device |
| JP8942189A Division JPH01302728A (en) | 1989-04-07 | 1989-04-07 | Manufacture of plastic sealed type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60257529A true JPS60257529A (en) | 1985-12-19 |
| JPH0254666B2 JPH0254666B2 (en) | 1990-11-22 |
Family
ID=14626985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59114018A Granted JPS60257529A (en) | 1984-06-04 | 1984-06-04 | Manufacture of resin sealed type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60257529A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60169843U (en) * | 1984-04-19 | 1985-11-11 | 日本電気株式会社 | Isolated semiconductor device |
-
1984
- 1984-06-04 JP JP59114018A patent/JPS60257529A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60169843U (en) * | 1984-04-19 | 1985-11-11 | 日本電気株式会社 | Isolated semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0254666B2 (en) | 1990-11-22 |
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