JPS60260500A - 低転位密度のＩｎＰ単結晶とその製造方法 - Google Patents

低転位密度のＩｎＰ単結晶とその製造方法

Info

Publication number: JPS60260500A
Authority: JP; Japan
Prior art keywords: inp; crystal; single crystal; concentration; impurities
Prior art date: 1984-06-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP59115738A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0428679B2 (de

Inventor

Mikio Morioka

盛岡　幹雄

Atsushi Shimizu

敦清水

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumitomo Electric Industries Ltd

Original Assignee

Sumitomo Electric Industries Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-06-05

Filing date

1984-06-05

Publication date

1985-12-23

1984-06-05 Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd

1984-06-05 Priority to JP59115738A priority Critical patent/JPS60260500A/ja

1985-12-23 Publication of JPS60260500A publication Critical patent/JPS60260500A/ja

1992-05-14 Publication of JPH0428679B2 publication Critical patent/JPH0428679B2/ja

Status Granted legal-status Critical Current

Links

239000013078 crystal Substances 0.000 title claims description 116
238000004519 manufacturing process Methods 0.000 title claims description 10
239000012535 impurity Substances 0.000 claims description 61
229910052733 gallium Inorganic materials 0.000 claims description 29
229910052785 arsenic Inorganic materials 0.000 claims description 27
238000007711 solidification Methods 0.000 claims description 24
230000008023 solidification Effects 0.000 claims description 24
238000000034 method Methods 0.000 claims description 23
239000002994 raw material Substances 0.000 claims description 22
229910052717 sulfur Inorganic materials 0.000 claims description 9
229910052725 zinc Inorganic materials 0.000 claims description 9
150000001875 compounds Chemical class 0.000 claims description 7
229910000673 Indium arsenide Inorganic materials 0.000 claims description 6
RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 6
229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
229910052710 silicon Inorganic materials 0.000 claims description 4
229910052770 Uranium Inorganic materials 0.000 claims description 3
229910052793 cadmium Inorganic materials 0.000 claims description 3
229910052804 chromium Inorganic materials 0.000 claims description 3
229910052732 germanium Inorganic materials 0.000 claims description 3
229910052742 iron Inorganic materials 0.000 claims description 3
229910052711 selenium Inorganic materials 0.000 claims description 3
239000000126 substance Substances 0.000 claims description 3
229910052718 tin Inorganic materials 0.000 claims description 3
241001024304 Mino Species 0.000 claims 1
229910052716 thallium Inorganic materials 0.000 claims 1
125000004429 atom Chemical group 0.000 description 24
238000005204 segregation Methods 0.000 description 14
230000000694 effects Effects 0.000 description 10
239000000155 melt Substances 0.000 description 10
239000002775 capsule Substances 0.000 description 8
239000007788 liquid Substances 0.000 description 8
238000007792 addition Methods 0.000 description 7
238000001556 precipitation Methods 0.000 description 7
235000012431 wafers Nutrition 0.000 description 7
230000007547 defect Effects 0.000 description 6
239000000758 substrate Substances 0.000 description 6
230000012010 growth Effects 0.000 description 4
229910052739 hydrogen Inorganic materials 0.000 description 4
229910052738 indium Inorganic materials 0.000 description 4
WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 4
230000007423 decrease Effects 0.000 description 3
238000010586 diagram Methods 0.000 description 3
239000011261 inert gas Substances 0.000 description 3
239000007791 liquid phase Substances 0.000 description 3
239000007790 solid phase Substances 0.000 description 3
229910052787 antimony Inorganic materials 0.000 description 2
238000009826 distribution Methods 0.000 description 2
238000005530 etching Methods 0.000 description 2
239000000463 material Substances 0.000 description 2
238000005259 measurement Methods 0.000 description 2
125000004437 phosphorous atom Chemical group 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
239000007787 solid Substances 0.000 description 2
229910052720 vanadium Inorganic materials 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
229910005533 GaO Inorganic materials 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
239000000969 carrier Substances 0.000 description 1
239000002800 charge carrier Substances 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
230000000295 complement effect Effects 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000011109 contamination Methods 0.000 description 1
238000001816 cooling Methods 0.000 description 1
229910001873 dinitrogen Inorganic materials 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
238000000605 extraction Methods 0.000 description 1
230000005669 field effect Effects 0.000 description 1
239000003574 free electron Substances 0.000 description 1
239000007789 gas Substances 0.000 description 1
229910021480 group 4 element Inorganic materials 0.000 description 1
229910021478 group 5 element Inorganic materials 0.000 description 1
230000031700 light absorption Effects 0.000 description 1
238000002844 melting Methods 0.000 description 1
230000008018 melting Effects 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
238000002156 mixing Methods 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
239000010453 quartz Substances 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
239000010703 silicon Substances 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
230000002269 spontaneous effect Effects 0.000 description 1
239000007858 starting material Substances 0.000 description 1
238000006467 substitution reaction Methods 0.000 description 1
238000005303 weighing Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Recrystallisation Techniques (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

JP59115738A 1984-06-05 1984-06-05 低転位密度のＩｎＰ単結晶とその製造方法 Granted JPS60260500A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP59115738A JPS60260500A (ja)	1984-06-05	1984-06-05	低転位密度のＩｎＰ単結晶とその製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59115738A JPS60260500A (ja)	1984-06-05	1984-06-05	低転位密度のＩｎＰ単結晶とその製造方法

Publications (2)

Publication Number	Publication Date
JPS60260500A true JPS60260500A (ja)	1985-12-23
JPH0428679B2 JPH0428679B2 (de)	1992-05-14

Family

ID=14669849

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP59115738A Granted JPS60260500A (ja)	1984-06-05	1984-06-05	低転位密度のＩｎＰ単結晶とその製造方法

Country Status (1)

Country	Link
JP (1)	JPS60260500A (de)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS60176997A (ja) *	1984-02-23	1985-09-11	Sumitomo Electric Ind Ltd	低転位密度の３−５化合物半導体単結晶

1984
- 1984-06-05 JP JP59115738A patent/JPS60260500A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS60176997A (ja) *	1984-02-23	1985-09-11	Sumitomo Electric Ind Ltd	低転位密度の３−５化合物半導体単結晶

Also Published As

Publication number	Publication date
JPH0428679B2 (de)	1992-05-14

Publication	Publication Date	Title
US4303464A (en)	1981-12-01	Method of manufacturing gallium phosphide single crystals with low defect density
Schilz et al.	1995	Bulk growth of silicon-germanium solid solutions
JPH03122097A (ja)	1991-05-24	単結晶の２‐６族または３‐５族化合物の製造法及びそれより作られる製品
US4528061A (en)	1985-07-09	Process for manufacturing boron-doped gallium arsenide single crystal
JPS60137899A (ja)	1985-07-22	砒化ガリウム単結晶とその製造方法
EP0149082B1 (de)	1988-02-24	Galliumarsenid-Einkristall und seine Herstellung
JPH0254320B2 (de)	1990-11-21
US4196171A (en)	1980-04-01	Apparatus for making a single crystal of III-V compound semiconductive material
Deitch et al.	2000	Bulk single crystal growth of silicon-germanium
JPS60176997A (ja)	1985-09-11	低転位密度の３−５化合物半導体単結晶
JPH06219900A (ja)	1994-08-09	Ｓｉドープｎ型ガリウム砒素単結晶の製造方法
JPS60260500A (ja)	1985-12-23	低転位密度のＩｎＰ単結晶とその製造方法
JPS61205697A (ja)	1986-09-11	３−５族化合物半導体の単結晶成長装置
JP3818023B2 (ja)	2006-09-06	ＧａＡｓ単結晶の製造方法
US4708763A (en)	1987-11-24	Method of manufacturing bismuth germanate crystals
EP4592431A1 (de)	2025-07-30	Verfahren zur herstellung eines gaas-ingots und gaas-ingot
JPS606918B2 (ja)	1985-02-21	３−５族化合物単結晶の製造方法
JPS5935880B2 (ja)	1984-08-31	ＧａＳｂ単結晶の引上方法
JPS6058196B2 (ja)	1985-12-18	化合物半導体単結晶の引上方法および装置
JPS60137900A (ja)	1985-07-22	砒化ガリウム単結晶の製造方法
Tamjidi et al.	1986	Composition gradients in bridgman-grown Hg1− xMnxTe
JPS5912639B2 (ja)	1984-03-24	結晶成長法
JPH0517196B2 (de)	1993-03-08
JPH0735319B2 (ja)	1995-04-19	珪素添加ガリウム砒素単結晶の製造方法
JPS6311599A (ja)	1988-01-19	液体カプセル引き上げ法用封止剤及び単結晶の成長方法