JPS6027681A - BaPb↓1▲−▼↓xBi↓xO↓3単結晶の溶液ひきあげ法による製造方法 - Google Patents
BaPb↓1▲−▼↓xBi↓xO↓3単結晶の溶液ひきあげ法による製造方法Info
- Publication number
- JPS6027681A JPS6027681A JP13617283A JP13617283A JPS6027681A JP S6027681 A JPS6027681 A JP S6027681A JP 13617283 A JP13617283 A JP 13617283A JP 13617283 A JP13617283 A JP 13617283A JP S6027681 A JPS6027681 A JP S6027681A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- molten liquid
- seed
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13617283A JPS6027681A (ja) | 1983-07-26 | 1983-07-26 | BaPb↓1▲−▼↓xBi↓xO↓3単結晶の溶液ひきあげ法による製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13617283A JPS6027681A (ja) | 1983-07-26 | 1983-07-26 | BaPb↓1▲−▼↓xBi↓xO↓3単結晶の溶液ひきあげ法による製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6027681A true JPS6027681A (ja) | 1985-02-12 |
| JPS6156200B2 JPS6156200B2 (de) | 1986-12-01 |
Family
ID=15169004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13617283A Granted JPS6027681A (ja) | 1983-07-26 | 1983-07-26 | BaPb↓1▲−▼↓xBi↓xO↓3単結晶の溶液ひきあげ法による製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6027681A (de) |
-
1983
- 1983-07-26 JP JP13617283A patent/JPS6027681A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6156200B2 (de) | 1986-12-01 |
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