JPS6028256A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6028256A JPS6028256A JP58136519A JP13651983A JPS6028256A JP S6028256 A JPS6028256 A JP S6028256A JP 58136519 A JP58136519 A JP 58136519A JP 13651983 A JP13651983 A JP 13651983A JP S6028256 A JPS6028256 A JP S6028256A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- elements
- semiconductor
- semiconductor device
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/811—Multiple chips on leadframes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
- H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
fa) 発明の技術分野
本発明は、半導体装置に係り、特に、その樹脂封止構成
に関す。DETAILED DESCRIPTION OF THE INVENTION fa) Technical Field of the Invention The present invention relates to a semiconductor device, and particularly to a resin-sealed structure thereof.
(bl 技術の背景
半導体装置は、その便宜さの故に、使用の拡大と相俟っ
て、低価格化・多機能化が進んで来ている。(bl Background of the Technology) Because of their convenience, semiconductor devices are becoming more affordable and multifunctional as their use expands.
低価格化では、その一つとして、従来のセラミンク等の
封止の代わりに、樹脂封止が多くなって来ている。One of the reasons for lowering prices is that resin sealing is becoming more common instead of conventional ceramic sealing.
また、多機能化では、半導体集積回路素子の集積度を上
げることが進められているが、一方では、素子の大型化
も行われている。 。Further, in order to increase the number of functions, efforts are being made to increase the degree of integration of semiconductor integrated circuit devices, but at the same time, devices are also becoming larger. .
(C) 従来技術と問題点
第1図は従来の樹脂封止形半導体装置の一例の構成図で
、1は半導体素子、2はリードフレーム、3はダイステ
ージ、4は接続ワイヤ、5は樹脂モールドをそれぞれ示
す。(C) Prior art and problems Figure 1 is a block diagram of an example of a conventional resin-sealed semiconductor device, in which 1 is a semiconductor element, 2 is a lead frame, 3 is a die stage, 4 is a connecting wire, and 5 is a resin. Each mold is shown.
半導体素子1は、リードフレーム2のダイステージ3に
グイボンディングされ、接続ワイヤ4でリードフレーム
2の各リードにワイヤボンディングされた後、封止のた
め樹脂モールド5の如(樹脂でモールドされている。The semiconductor element 1 is wire-bonded to the die stage 3 of the lead frame 2, wire-bonded to each lead of the lead frame 2 using connection wires 4, and then placed in a resin mold 5 (molded with resin) for sealing. .
この構成は、多(の半導体装置に採用されているが、樹
脂モールド5における、半導体素子1の主面側と裏面側
では形状が異なるため、その応力分布が異なり、前述の
多機能化で述べた如く、半導体素子が大型化した場合に
は、半導体素子1に異常応力が加わる問題がある。この
ため、半導体素子1の大きさが制限されて、1幾能の収
容口が制限される欠点がある。This configuration has been adopted in many semiconductor devices, but since the shapes of the main surface and the back surface of the semiconductor element 1 in the resin mold 5 are different, the stress distribution is different. For example, when a semiconductor device becomes large in size, there is a problem that abnormal stress is applied to the semiconductor device 1. Therefore, the size of the semiconductor device 1 is limited, and the number of accommodation openings per function is limited. There is.
(dl 発明の目的
本発明の目的は上記従来の欠点に鑑み、半導体素子に加
わる異常応力を低減し、且つ、機能の収容量を増やすこ
とが可能な樹脂封止構成を持つ半導体装置を提供するに
ある。(dl Object of the Invention In view of the above-mentioned conventional drawbacks, an object of the present invention is to provide a semiconductor device having a resin-sealed structure capable of reducing abnormal stress applied to a semiconductor element and increasing the capacity of functions. It is in.
tel 発明の構成
上記目的は、一対の半導体素子をその背面が互いに対向
するように配置し、該半導体素子の周囲に延在する複数
のリードと共に樹脂封止してなることを特徴とする本発
明の半導体装置によって達成される。tel Structure of the Invention The above object is characterized in that a pair of semiconductor elements are arranged so that their back surfaces face each other, and the semiconductor elements are sealed with resin together with a plurality of leads extending around the semiconductor elements. This is achieved by the semiconductor device.
本半導体装置は、二づの半導体素子がその中間の面に対
して略対称に位置して樹脂封止されるため、該樹脂の応
力分布も略対称になり、該半導体素子に加わる異常応力
は低減されて、該半導体素子を大きくすることが出来る
ばかりでなく、二つの半導体素子を収容するので、その
機能を増やすことができる。また、二つの半導体素子の
組合せに自由があるのも、機能構成上の利点となる。In this semiconductor device, since the two semiconductor elements are located approximately symmetrically with respect to the intermediate plane and are sealed with resin, the stress distribution of the resin is also approximately symmetrical, and the abnormal stress applied to the semiconductor elements is reduced. Not only can the size of the semiconductor device be increased by reducing the size, but also its functionality can be increased since it accommodates two semiconductor devices. Furthermore, freedom in combining two semiconductor elements is also an advantage in terms of functional configuration.
(fl 発明の実施例 以下本発明の実施例を図により説明する。(fl Embodiments of the invention Embodiments of the present invention will be described below with reference to the drawings.
第2図(al・第2図(blは本発明の構成による半導
体装置の実施例の構成図、第2図(clはそのジ−l−
フレームの図、第3図は同しく他の実施例の構成図で、
5a・5bは樹脂モールド、6a・6bはスペーサ、1
l−11b ・2l−21bは半導体素子、12・12
a−12b 2222a ・22bはリ−1・゛フレー
ム、13 ・23はグイステージ、14・24は接続ワ
イヤをそれぞれ示す。Figure 2 (al) Figure 2 (bl is a configuration diagram of an embodiment of a semiconductor device according to the structure of the present invention, Figure 2 (cl is its
The frame diagram and FIG. 3 are also configuration diagrams of other embodiments,
5a and 5b are resin molds, 6a and 6b are spacers, 1
l-11b ・2l-21b is a semiconductor element, 12.12
a-12b 2222a and 22b indicate the Lee-1 frame, 13 and 23 the stage, and 14 and 24 the connection wires, respectively.
第1図+a+図示の半導体装置は、半導体素子11・2
10面を該半導体装置の搭載面に対し1118垂直に配
置し、外部に導出するり一ド端子を一方向に、且′つ、
例えばプリント配線基板等の接続孔へ挿入するように導
出した例である。The semiconductor device shown in FIG. 1+a+ has semiconductor elements 11 and 2
10 sides are arranged perpendicularly to the mounting surface of the semiconductor device, and the lead terminals are led out to the outside in one direction, and
For example, this is an example in which it is inserted into a connection hole of a printed wiring board or the like.
半導体素子11は、第2図(C)図示のリードフレーム
12のグイステージ13にダイポンディングされ、接続
ワイヤ14でリードフレーム12の各リードにワイヤボ
ンディングされている。また、別の半導体集積回路素子
なる半導体素子21も同様にリードフレーム22に搭載
されていて、両ダイステージ13・23の背面が絶縁性
なるスペーサ6aを介し対向して接合されている。そし
て、封止のため樹脂モールド5aの如く樹脂でモールド
されている。The semiconductor element 11 is die-bonded to the guide stage 13 of the lead frame 12 shown in FIG. Further, a semiconductor element 21, which is another semiconductor integrated circuit element, is similarly mounted on the lead frame 22, and the back surfaces of both die stages 13 and 23 are joined to face each other via an insulating spacer 6a. Then, for sealing, it is molded with resin like a resin mold 5a.
第2図(b1図示の半導体装置は、ジ−1zフレームの
外部導出部形状を変えて12a ・22aの如くし、例
えばプリント配線基板等の接続ランドに、例えばりフロ
ーはんだ(−1け等で接続搭載する形にしたものである
。In the semiconductor device shown in Fig. 2 (b1), the shape of the external lead-out portion of the G-1z frame is changed to 12a and 22a, and flow soldering (-1 digit, etc.) is applied to the connection land of a printed wiring board, etc. It is designed to be connected and mounted.
ここで、第2図(C1図示のリードフレーム12は、そ
のワイートボンディングパッドの位置がグイステージ1
3に対してリード端子導出の反対側に無いものの一例で
あって、本発明には、ダイステージの任意の周辺にワイ
ヤポンディングパッドが有るリードフレームを使用した
場合を含んでいる。Here, the lead frame 12 shown in FIG.
3, the present invention includes the use of a lead frame with wire bonding pads at any periphery of the die stage.
これらの構成では、樹脂モールド5aは、二つの半導体
素子11・21の中間の面に対して略対称に構成される
ため、その応力分布も略対称になり、半導体素子11・
21に加わる異常応力は従来に比べて低減されて、半導
体素子11・21を大きくすることが出来るばかりでな
く、二つの半導体素子11・21を収容するので、半導
体装置としての機能をf%qやすことができる。また、
二つの半導、体素子11・21の組合せに自由があるの
も、機能構成上の利点となる。これらの点は、以下に示
す他の実施例についても同様である。In these configurations, since the resin mold 5a is configured approximately symmetrically with respect to the intermediate plane between the two semiconductor elements 11 and 21, the stress distribution thereof is also approximately symmetrical, and the semiconductor elements 11 and 21 are approximately symmetrical.
The abnormal stress applied to the semiconductor device 21 is reduced compared to the conventional one, and not only can the semiconductor elements 11 and 21 be made larger, but since two semiconductor elements 11 and 21 are accommodated, the function as a semiconductor device can be reduced by f%q. It can be done easily. Also,
The ability to freely combine the two semiconductors and body elements 11 and 21 is also an advantage in terms of functional configuration. These points also apply to other embodiments shown below.
第3図図示の半導体装置は、本発明の構成による他の実
施例で、前記従来例の如く、半導体素子11b ・21
bの面を該半導体装置の搭載面に対し1lI8平行に配
置し、外部に導出するり一ド端子を両方向に、且つ、例
えばプリンl−配線基板等の接続孔へ挿入するように導
出した例である。これば、スペーサ6bを介した、リー
ドフレーム12b ・22bのダイステージ背面の接合
に際して、リードフレーム12b ・22bの両側に導
出されるリード端子が干渉せぬように、リードフレーム
12b ・22bを形成し、樹脂モールド’5bを形成
したものである。The semiconductor device shown in FIG. 3 is another embodiment according to the structure of the present invention, and as in the conventional example, semiconductor elements 11b and 21
An example in which the surface b is arranged parallel to the mounting surface of the semiconductor device, and the lead terminal is led out to the outside and inserted in both directions and into a connection hole of a wiring board, etc. It is. In this way, the lead frames 12b and 22b are formed so that the lead terminals led out on both sides of the lead frames 12b and 22b do not interfere when joining the back sides of the die stages of the lead frames 12b and 22b via the spacer 6b. , a resin mold '5b is formed.
なお、第2図(al・第2図(t])図示の半導体装置
において、二つのり−ISフレーム12・22のグイス
テージ13・23が電気的に接続されても支障無い場合
には、スペーサ6を削除してグイステージ13と23を
直接接合しても良く、第3図図示の場合も同様である。In addition, in the semiconductor device shown in FIG. 2 (al) and FIG. 2 (t), if there is no problem even if the two glue stages 13 and 23 of the IS frames 12 and 22 are electrically connected, the spacer 6 may be deleted and the guide stages 13 and 23 may be directly joined, and the same applies to the case shown in FIG.
(g+ 発明の効果
以上に説明したように、本発明による構成によれば、半
導体素子に加わる異常応力を低減し、且つ、機能の収容
量を増やすことが可能な樹脂封止構成を持つ半導体装置
が提供出来、半導体装置の用途拡大を可能にさせる効果
がある。(g+ Effects of the Invention As explained above, according to the configuration of the present invention, a semiconductor device having a resin-sealed configuration that can reduce abnormal stress applied to a semiconductor element and increase the capacity for functions) This has the effect of making it possible to expand the applications of semiconductor devices.
第1図は従来の樹脂封止形半導体装置の一例の構成図、
第2図(al・第2図(b)は本発明の構成による半導
体装置の実施例の構成図、第2図(C]はそのリードフ
レームの図、第3図は間しく他の実施例の構成図である
。
図面において、1・11・Ilb ・21・21bは半
導体素子、2 ・1212a −12b ・22□22
a ・22bばリードフレーム、3・13・23はダイ
ステージ、4・14・24は接続ワイート、5・5a・
5bは樹脂モールド、6a・6bはスペーサ、をそれぞ
れ示す。
243−FIG. 1 is a configuration diagram of an example of a conventional resin-encapsulated semiconductor device.
FIG. 2(al) and FIG. 2(b) are configuration diagrams of an embodiment of a semiconductor device according to the structure of the present invention, FIG. 2(C) is a diagram of its lead frame, and FIG. 3 is a diagram of another embodiment. In the drawing, 1, 11, Ilb, 21, 21b are semiconductor elements, 2, 1212a -12b, 22□22
a.22b is the lead frame, 3.13.23 is the die stage, 4.14.24 is the connection weight, 5.5a.
5b indicates a resin mold, and 6a and 6b indicate spacers. 243-
Claims (1)
置し、該半導体素子の周囲に延在する複数のリードと共
に樹脂封止してなることを特徴とする半導体装置。1. A semiconductor device comprising a pair of semiconductor elements arranged so that their back surfaces face each other and sealed with a resin together with a plurality of leads extending around the semiconductor elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58136519A JPS6028256A (en) | 1983-07-26 | 1983-07-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58136519A JPS6028256A (en) | 1983-07-26 | 1983-07-26 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6028256A true JPS6028256A (en) | 1985-02-13 |
Family
ID=15177070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58136519A Pending JPS6028256A (en) | 1983-07-26 | 1983-07-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6028256A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04159765A (en) * | 1990-10-23 | 1992-06-02 | Nec Corp | Hybrid integrated circuit device |
| EP0767495A3 (en) * | 1991-06-17 | 1997-05-21 | Fujitsu Limited | Surface-mounting type semiconductor device |
| US5821457A (en) * | 1994-03-11 | 1998-10-13 | The Panda Project | Semiconductor die carrier having a dielectric epoxy between adjacent leads |
| US5824950A (en) * | 1994-03-11 | 1998-10-20 | The Panda Project | Low profile semiconductor die carrier |
| US6016256A (en) * | 1997-11-14 | 2000-01-18 | The Panda Project | Multi-chip module having interconnect dies |
| US6297547B1 (en) * | 1998-02-13 | 2001-10-02 | Micron Technology Inc. | Mounting multiple semiconductor dies in a package |
| US6339191B1 (en) | 1994-03-11 | 2002-01-15 | Silicon Bandwidth Inc. | Prefabricated semiconductor chip carrier |
-
1983
- 1983-07-26 JP JP58136519A patent/JPS6028256A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04159765A (en) * | 1990-10-23 | 1992-06-02 | Nec Corp | Hybrid integrated circuit device |
| EP0767495A3 (en) * | 1991-06-17 | 1997-05-21 | Fujitsu Limited | Surface-mounting type semiconductor device |
| US5821457A (en) * | 1994-03-11 | 1998-10-13 | The Panda Project | Semiconductor die carrier having a dielectric epoxy between adjacent leads |
| US5824950A (en) * | 1994-03-11 | 1998-10-20 | The Panda Project | Low profile semiconductor die carrier |
| US6339191B1 (en) | 1994-03-11 | 2002-01-15 | Silicon Bandwidth Inc. | Prefabricated semiconductor chip carrier |
| US6828511B2 (en) | 1994-03-11 | 2004-12-07 | Silicon Bandwidth Inc. | Prefabricated semiconductor chip carrier |
| US6977432B2 (en) | 1994-03-11 | 2005-12-20 | Quantum Leap Packaging, Inc. | Prefabricated semiconductor chip carrier |
| US6016256A (en) * | 1997-11-14 | 2000-01-18 | The Panda Project | Multi-chip module having interconnect dies |
| US6266246B1 (en) | 1997-11-14 | 2001-07-24 | Silicon Bandwidth, Inc. | Multi-chip module having interconnect dies |
| US6297547B1 (en) * | 1998-02-13 | 2001-10-02 | Micron Technology Inc. | Mounting multiple semiconductor dies in a package |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH04307943A (en) | Semiconductor device | |
| JP2809945B2 (en) | Semiconductor device | |
| JPS6028256A (en) | Semiconductor device | |
| JPH0685151A (en) | Semiconductor device and manufacturing method thereof | |
| JPH0228966A (en) | Semiconductor device | |
| KR100218335B1 (en) | Chip size package | |
| JPS61240644A (en) | Semiconductor device | |
| KR100216989B1 (en) | Lead frame for 2-chip 1 package | |
| KR200154510Y1 (en) | Lead-on chip package | |
| KR950008240B1 (en) | Semiconductor package | |
| JPS62219531A (en) | Semiconductor integrated circuit device | |
| KR100567045B1 (en) | Semiconductor package | |
| JP2629461B2 (en) | Resin-sealed semiconductor device | |
| JPH0366150A (en) | Semiconductor integrated circuit device | |
| JPH0199245A (en) | Ic package | |
| JPH0637234A (en) | Semiconductor device | |
| JPH053284A (en) | Resin-sealed semiconductor device | |
| JP3015181B2 (en) | Semiconductor device | |
| JPS62119933A (en) | Integrated circuit device | |
| JPS6169162A (en) | Semiconductor device | |
| JPH0595018A (en) | Manufacture of semiconductor device | |
| JPH0555452A (en) | Semiconductor integrated circuit device | |
| JPH04127659U (en) | Lead frames and semiconductor devices using them | |
| JPH02280346A (en) | Manufacture of semiconductor element | |
| JPH0327559A (en) | Semiconductor device |