JPS6031201A - Thin film resistor for trimming - Google Patents
Thin film resistor for trimmingInfo
- Publication number
- JPS6031201A JPS6031201A JP58140825A JP14082583A JPS6031201A JP S6031201 A JPS6031201 A JP S6031201A JP 58140825 A JP58140825 A JP 58140825A JP 14082583 A JP14082583 A JP 14082583A JP S6031201 A JPS6031201 A JP S6031201A
- Authority
- JP
- Japan
- Prior art keywords
- film
- film resistor
- thin film
- resistor
- trimming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 本発明はトリミング用薄膜抵抗に関するものである。[Detailed description of the invention] The present invention relates to a thin film resistor for trimming.
集積回路の特性をウェーハの完成後調整する方法として
薄膜抵抗をレーザにより蒸発させて抵抗値を変化させる
という方法がよく知られている。A well-known method for adjusting the characteristics of integrated circuits after the wafer is completed is to change the resistance value by vaporizing a thin film resistor using a laser.
抵抗値の増加は、レーザのパワーをあるスレッショルド
値以上にして薄膜抵抗の一部を蒸発させることにより可
能であるが、逆に抵抗値を減少させるということはレー
ザトリミングでは考えられていなかった。レーザにより
抵抗値を減少させるという方法は、アイビーエムテクニ
カルディスクロージャグ２テイン第２４巻１１Ａ、１９
８２年４月号（ＩＢＭ Ｔｅｃｈｎｉｃａｌ Ｄｉｓｃ
ｌｏｓｕｒｅ ＢｕｌｌｅｔｉｎＶｏｌ、２４ Ｎｎ１
ｌＡ Ａｐｒｉｌ １９８２）の５４６６ページに紹介
されている。この内容によると、レーザパワーを薄膜抵
抗の蒸発のスレッショルド値よりも低くして、薄膜抵抗
に気相成長酸化膜を通して熱を与え、薄膜抵抗と酸化膜
との反応により抵抗値を低くするというものである。し
かしながら、このようにして得られる抵抗値減少率は非
常に小さくて、大きな変化を望む場合は用い難かった。It is possible to increase the resistance value by increasing the laser power above a certain threshold value and evaporating part of the thin film resistor, but conversely decreasing the resistance value has not been considered in laser trimming. The method of reducing the resistance value using a laser is described in IBM Technical Disclosure, Vol. 24, 11A, 19.
April 1982 issue (IBM Technical Disc
losure Bulletin Vol, 24 Nn1
IA April 1982), page 5466. According to the content, the laser power is lower than the threshold value for evaporation of the thin film resistor, heat is applied to the thin film resistor through the vapor phase grown oxide film, and the resistance value is lowered by the reaction between the thin film resistor and the oxide film. It is. However, the resistance value reduction rate obtained in this way is very small, making it difficult to use when a large change is desired.
本発明の目的は、レーザによる抵抗値減少の微調整のみ
ならず、粗調整も容易なトリミング用薄膜抵抗を提供す
ることにある。An object of the present invention is to provide a thin film resistor for trimming that allows not only fine adjustment but also coarse adjustment of resistance value reduction using a laser.
本発明のトリミング用薄膜抵抗は、絶縁基板と、該絶縁
基板上に形成された金属被膜抵抗体と、該金属被膜抵抗
体の一部に接触接続された金属配線と、前記金属被膜抵
抗体および金属配＃！を含む前記絶縁基板を覆って形成
された第１の絶縁膜と、該第１の絶縁膜上にあり前記金
属被膜抵抗体の所定領域を覆って形成された第２の絶縁
膜とを含む構成を有する。The trimming thin film resistor of the present invention includes an insulating substrate, a metal film resistor formed on the insulating substrate, a metal wiring connected to a part of the metal film resistor, the metal film resistor and Metal arrangement #! a first insulating film formed to cover the insulating substrate containing the insulating substrate; and a second insulating film formed on the first insulating film and covering a predetermined region of the metal film resistor. has.
本発明はつぎのような原理に基いている。すなわち、本
発明は、薄膜抵抗の上に気相成長酸化膜を載せたものと
、薄膜抵抗の上に気相成長酸化膜とプラズマ反応窒化膜
を載せたものの熱処理後の抵抗値を熱処理前の値と比較
した。第１表はスパッタで作成した５ｉＣｒ薄膜の抵抗
値変化の様子を示す。The present invention is based on the following principle. That is, the present invention compares the resistance value after heat treatment of a thin film resistor with a vapor grown oxide film placed on it, and a thin film resistor with a vapor grown oxide film and a plasma reaction nitride film placed on it, compared to the resistance value before heat treatment. compared with the value. Table 1 shows how the resistance value of the 5iCr thin film formed by sputtering changes.
第１表
上表より、薄膜抵抗上に気相成長酸化膜とプラズマ反応
窒化膜の２眉が存在すると、熱処理による抵抗値の変動
が大なることがわかる。以上の事実より、薄膜抵抗上の
保Ｓ膜の構造を二種類、即ち、気相成長酸化膜のみのも
のと、気相成長酸化膜上にプラズマ反応窒化膜の積層さ
れたものに分け、それぞれの領域にレーザによる熱処理
を施すことにより、抵抗値の微ＡＩＩＪ整とＩＪ、 １
１１％整が行なえる。From the table above in Table 1, it can be seen that when two layers, a vapor-phase grown oxide film and a plasma-reacted nitride film, are present on a thin film resistor, the resistance value changes greatly due to heat treatment. Based on the above facts, the structure of the S retaining film on the thin film resistor can be divided into two types: one with only a vapor-phase grown oxide film, and one with a plasma-reacted nitride film laminated on a vapor-phase grown oxide film. By applying laser heat treatment to the area, the resistance value can be finely adjusted and IJ, 1
11% adjustment can be performed.
つぎに本発明を実施例により説明する。Next, the present invention will be explained by examples.
第１図（１）は本発明の一実施例の平面図、同図（ｂ）
は図（ａ）のＡ−Ａ断面図である。これらの図において
、１は絶縁基板、２は薄膜抵抗、３は金属配線、４は気
相成長酸化膜、５はプラズマ反応窒化膜、６は窒化膜５
のスルーホールである。スルーホール６にはプラズマ反
応窒化膜が存在しないので、この下の薄膜抵抗はレーザ
熱処理により抵抗値の高精度トリミングが可能で、他の
部分の薄膜抵抗はその上に気相成長酸化膜とプラズマ反
応窒化膜が存在するので同一レーザエネルギーで抵抗値
の粗調整が行なえる。又抵抗値の増大はレーザエネルギ
ーを増大させて、スルーホール６全通して行なえばよい
。FIG. 1(1) is a plan view of an embodiment of the present invention, and FIG. 1(b) is a plan view of an embodiment of the present invention.
is a sectional view taken along line A-A in Figure (a). In these figures, 1 is an insulating substrate, 2 is a thin film resistor, 3 is a metal wiring, 4 is a vapor-phase grown oxide film, 5 is a plasma-reactive nitride film, and 6 is a nitride film 5
It is a through hole. Since there is no plasma-reacted nitride film in the through-hole 6, the resistance value of the thin-film resistor under this can be trimmed with high precision by laser heat treatment, and the thin-film resistors in other parts are coated with a vapor-grown oxide film and a plasma-reacted film. Since a reactive nitride film is present, the resistance value can be roughly adjusted with the same laser energy. Further, the resistance value can be increased by increasing the laser energy and passing through the entire through hole 6.
以上の様に、本発明の如く、薄膜抵抗上に気相成長酸化
膜、気相成長酸化膜とプラズマ反応窒化膜の２１：’を
造を取り入れることにより、レーザによる抵抗値減少の
微調と粗調が容易に、行なえる。As described above, by incorporating a vapor-phase grown oxide film, a 21:' structure of a vapor-phase grown oxide film and a plasma-reacted nitride film on a thin film resistor as in the present invention, fine adjustment and roughness of the resistance value reduction by laser can be achieved. Easy to tune.
第１図（ａ）は本発明の一実施例の平面図、同図（ｂ）
は同図（ａ）のＡ−Ａ断面図である。
１・・・・・・絶縁基板、２・・・・・・薄膜抵抗、３
・・・・・・金属配線、４・・・・・・気相成長酸化膜
、５・・・・・・プラズマ反応窒化膜、６・・・・・・
プラズマ反応窒化膜のスルーホール。
代理人 弁理士 内 原 １ ° ・FIG. 1(a) is a plan view of an embodiment of the present invention, and FIG. 1(b) is a plan view of an embodiment of the present invention.
is a sectional view taken along line A-A in FIG. 1...Insulating substrate, 2...Thin film resistor, 3
...Metal wiring, 4...Vapor-phase growth oxide film, 5...Plasma reaction nitride film, 6...
Through-hole in plasma-reactive nitride film. Agent Patent Attorney Uchihara 1 ° ・
Claims (2)
膜抵抗体と、該金属被膜抵抗体と接触接続された金属配
線と、前記金属被膜抵抗体および金属配線を含む前記絶
縁基板上に形成された第１の絶縁膜と、該第１の絶縁膜
上にあり前記金属被膜抵抗体のｊ９１定領域を覆って設
けられた第２の絶縁膜と奮含むことを特徴とするトリミ
ング用薄１回抵抗。(1) An insulating substrate, a metal film resistor formed on the insulating substrate, a metal wiring connected to the metal film resistor, and an insulating substrate including the metal film resistor and the metal wiring. A trimming thin film comprising a first insulating film formed and a second insulating film provided on the first insulating film and covering the j91 constant region of the metal film resistor. Resisted once.
が窒化膜から成ることを特徴とする特許請求の範囲第１
項に記載のトリミング用薄膜抵抗。(2) Claim 1, wherein the first insulating film is an oxide film, and the second insulating film is a nitride film.
Thin film resistor for trimming as described in section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58140825A JPS6031201A (en) | 1983-08-01 | 1983-08-01 | Thin film resistor for trimming |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58140825A JPS6031201A (en) | 1983-08-01 | 1983-08-01 | Thin film resistor for trimming |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6031201A true JPS6031201A (en) | 1985-02-18 |
Family
ID=15277592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58140825A Pending JPS6031201A (en) | 1983-08-01 | 1983-08-01 | Thin film resistor for trimming |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6031201A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01172232U (en) * | 1988-05-26 | 1989-12-06 |
-
1983
- 1983-08-01 JP JP58140825A patent/JPS6031201A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01172232U (en) * | 1988-05-26 | 1989-12-06 |
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