JPS6043214A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPS6043214A JPS6043214A JP15232383A JP15232383A JPS6043214A JP S6043214 A JPS6043214 A JP S6043214A JP 15232383 A JP15232383 A JP 15232383A JP 15232383 A JP15232383 A JP 15232383A JP S6043214 A JPS6043214 A JP S6043214A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- layer
- film magnetic
- thin film
- magnetic head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims description 9
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 239000004020 conductor Substances 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000001312 dry etching Methods 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 17
- 229910000859 α-Fe Inorganic materials 0.000 description 13
- 230000020169 heat generation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910018605 Ni—Zn Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/40—Protective measures on heads, e.g. against excessive temperature
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、例えばディジタル・オーディオ・テープレコ
ーダー（ＤＡＴ）等の磁気記録再生装置に用いられる薄
膜磁気＾ラドに関するものである。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a thin film magnetic field used in a magnetic recording/reproducing device such as a digital audio tape recorder (DAT).
（ロ）従来技術
一般に、斯る薄膜磁気ヘッドは薄膜磁気ヘッドパターン
を形成して成る下地用基板上に、保護用基板を接着して
構成されている。そして、斯る薄膜磁気ヘッドに用いら
れている例えば下地用基板には大きく分けて磁性と非磁
性の基板があり、磁性基板には一般にＮｉ−Ｚｎフェラ
イトの他Ｍｎ−Ｚｎフェライトやセンダスト等が用いら
れている。このうち、Ｎｉ−Ｚｎフェライト及びＭｎ−
Ｚｎフェライトは耐摩耗性についてはまずまずであるが
熱伝導性については余り芳しくないため、斯るＮｉ、−
ＬＺｎフェライト及びＭｎ−Ｚｎフェライトを記録用薄
膜磁気ヘッドの下地用基板として用いた場合にはコイル
に流す励磁電流による発熱が大きな問題になっていた。(b) Prior Art Generally, such thin film magnetic heads are constructed by adhering a protective substrate onto a base substrate on which a thin film magnetic head pattern is formed. Underlying substrates used in such thin-film magnetic heads, for example, are broadly divided into magnetic and non-magnetic substrates, and magnetic substrates are generally made of Ni-Zn ferrite, Mn-Zn ferrite, sendust, etc. It is being Among these, Ni-Zn ferrite and Mn-
Although Zn ferrite has good wear resistance, it does not have very good thermal conductivity.
When LZn ferrite and Mn--Zn ferrite are used as the base substrate of a recording thin-film magnetic head, heat generation due to excitation current flowing through the coil has been a major problem.
即ち、薄膜磁気ヘッドはその構造上熱のほとんどが伝導
によって発散されることから、コイルの周辺の材料を熱
伝導性の良いもので構成してやらないと、熱のため流し
得る励磁電流（最大許容電流）が少なくなると同時に、
この熱が磁性層の温度を上昇させて磁性層の飽和磁束密
度及び透磁率等の磁気特性が劣化されることになる。そ
の結果、テープの記録に必要な漏洩磁場が弱くなり、記
録性能が劣化することになる。これは、磁気抵抗効果型
の再生用薄膜磁気ヘッドについても同様で、この場合は
センス電流による発熱が大きな問題になっていた。In other words, due to the structure of a thin-film magnetic head, most of the heat is dissipated by conduction, so unless the material surrounding the coil is made of a material with good thermal conductivity, the excitation current (maximum allowable current ) decreases, and at the same time,
This heat increases the temperature of the magnetic layer, resulting in deterioration of magnetic properties such as saturation magnetic flux density and magnetic permeability of the magnetic layer. As a result, the leakage magnetic field necessary for recording on the tape becomes weaker, and the recording performance deteriorates. This also applies to magnetoresistive thin-film magnetic heads for reproduction, in which case heat generation due to sense current has become a major problem.
一方、センダストを下地用基板として用いた場合につい
ても、上記したフェライト系に比べて発熱に関するはっ
きりとした改善はみられず、耐摩耗性の点でもフェライ
ト系より劣るため満足のいく基板とは言えなかった。On the other hand, when Sendust is used as a base substrate, there is no clear improvement in heat generation compared to the ferrite type mentioned above, and it is inferior to the ferrite type in terms of wear resistance, so it cannot be said to be a satisfactory substrate. There wasn't.
欠に、斯る下地用基板が非磁性の基板である場合につい
てであるが、非磁性基板としてはＡｊｂ０３、Ａ７ｂ０
３ Ｔｉ、Ｃ，Ｔ’１０２ Ｂａ、ＯＺｎＯ２等のセラ
ミック系のものやＳｉ単結晶等がある。このうち、セラ
ミック系のものについてはＮ ’ｉ−−Ｚ ｎフェライ
ト等よりも耐摩耗性が優れているが、熱伝導性について
はＮｉ、Ｚｎフェライト等と同様余り芳しくなかった。This is especially true when the underlying substrate is a non-magnetic substrate, but examples of non-magnetic substrates include Ajb03 and A7b0.
3 Ceramic materials such as Ti, C, T'102 Ba, OZnO2, and Si single crystals are available. Among these, ceramic materials have better wear resistance than N'i--Zn ferrite, etc., but their thermal conductivity is not so good like Ni, Zn ferrite, etc.
一方、Ｓ１単結晶を下地用基板として用いた場合、その
最大許容電流についてはＮ’Ｌ−Ｚｎフェライト基板の
場合よりも約１５％程度の向上が見られるが、耐摩耗性
についてはＮｊ−−Ｚｎフェライトよりも劣るため、基
板として最適なものではなかった。On the other hand, when S1 single crystal is used as the underlying substrate, the maximum allowable current is approximately 15% higher than that of the N'L-Zn ferrite substrate, but the wear resistance is lower than that of the Nj-- Since it is inferior to Zn ferrite, it was not optimal as a substrate.
（ハ）発明の目的
本発明は斯る点に鑑み成されたもので、薄膜磁気ヘッド
に新たな基板材料を用いることによって上記した従来薄
膜磁気ヘッドの問題点を解決し、その性能及び信頼性を
向上させることを目的としたものである。(c) Purpose of the Invention The present invention has been made in view of the above points, and it solves the problems of the conventional thin film magnetic head described above by using a new substrate material for the thin film magnetic head, and improves its performance and reliability. The purpose is to improve the
に）発明の構成
本発明は上記した目的を達成するために、薄膜磁気ヘッ
ドパターンを形成して成る下地用基板上に、保護用基板
を接着して構成される薄膜磁気ヘッドであっ４て、前記
下地用基板と保護用基板の両方若しくは片方に熱伝導率
がＳｉ単結晶と同等か若しくはそれ以上のセラミックス
材料、具体的にはＳＩＣを主成分としたセラミックスを
用いたものである。B) Structure of the Invention In order to achieve the above-mentioned object, the present invention provides a thin film magnetic head constructed by bonding a protective substrate onto a base substrate on which a thin film magnetic head pattern is formed. A ceramic material having a thermal conductivity equal to or higher than that of Si single crystal, specifically a ceramic mainly composed of SIC, is used for both or one of the base substrate and the protective substrate.
（ホ）実施例
以下、本発明の一実施例である記録用薄膜磁気ヘッドに
ついて図面と共に説明する。(e) Example A thin film magnetic head for recording, which is an example of the present invention, will be described below with reference to the drawings.
先ず、記録用薄膜磁気ヘッドの下地用基板として硬度（
１１１ち、耐摩耗性）が高く、且つＳｉ単結晶と同等若
しくはそれ以上に熱伝導性の高いＳｉＣを主成分とした
セラミックス、即ちＳｉＣセラミックス（例えば、商品
名としてＨ工ＴＡＣＥＲＡＭ ５Ｏ−１０１がある）を
用いた場合の製造過程について第１図並びに第２図を参
照にしながら述べる。First, the hardness (
SiC ceramics (for example, the product name is H-TACERAM 5O-101 is ) will be described with reference to FIGS. 1 and 2.
即ち、ＳｉＣセラミックスよりなる下地用基板（１）上
に下部磁性層（２）であるパーマロイ（Ｎｉ、８１％−
Ｆｅｉ９％）を約５μｍの厚みに全面スパッタ蒸着し、
その上に絶縁層（Ｓ ｉ、 ０２、厚み約１μｍ）を同
じく全面スパッタ蒸着する。そして、欠にコイル用の導
体層＋３１（Ｃｕ、厚み約２ Ｉｔ ｍ ）を上下に接
着層（ＣｒやＴ１等、厚み約０．０５μｍ）を配して全
面に真空、蒸着或いはスパッタ蒸着を行い、ドライエツ
チング（ケミカルエツチングも可）で所定の導体形状に
パターン化する。尚、斯る導体層（３）は幅が最も狭い
部分で５０μｍの１ターン型とする。そして、更にこの
上にリード線接続部を覆うように金属マスクを配した所
謂マスクスパッタ法により絶縁層（Ｓ Ｔ０２、厚み約
１μｍ）を成膜した後、作動ギャップ長を形成する部分
のみエツチングで取り除き新たに作動ギャップ長ｆに等
しい厚みの絶縁層（Ｓ−１０２、厚み約０．５μｍ）を
成膜する。次いで下部磁性層（２１の後部接続部の絶縁
層のみを取り除き、下部磁性層（４）（パーマロイ、厚
さ約７μｍ）を全面スパッタ蒸着した後、ドライエツチ
ングにてパターン化する。That is, a lower magnetic layer (2) of permalloy (Ni, 81% -
Fei9%) was sputter-deposited on the entire surface to a thickness of about 5 μm,
Thereon, an insulating layer (Si, 02, approximately 1 μm thick) is similarly sputter-deposited over the entire surface. Then, a conductive layer +31 (Cu, thickness approximately 2 It m) for the coil is placed above and below with an adhesive layer (Cr, T1, etc., approximately 0.05 μm thick), and vacuum, evaporation, or sputter deposition is performed on the entire surface. Then, pattern it into a predetermined conductor shape by dry etching (chemical etching is also possible). The conductor layer (3) is of a one-turn type with a width of 50 μm at its narrowest portion. Then, an insulating layer (ST02, approximately 1 μm thick) is formed on top of this by the so-called mask sputtering method using a metal mask to cover the lead wire connection portion, and then only the portion where the working gap length is to be formed is etched. After removing it, a new insulating layer (S-102, approximately 0.5 μm thick) having a thickness equal to the working gap length f is formed. Next, only the insulating layer at the rear connection portion of the lower magnetic layer (21) is removed, and a lower magnetic layer (4) (permalloy, approximately 7 μm thick) is sputter-deposited over the entire surface, and then patterned by dry etching.
その上に保護層としての絶縁層ｆ５）（Ｓｉ、０２、厚
み約２μｍ）をマスクスパッタ法で成膜する。そして最
後にエポキシ系樹脂等の接着剤（６）（或いはガラスで
も良い）にて上部保護用基板（７）（例えばガラス）を
接着し、切断加工後にケース入れ、テープ対接面加工、
リード線接続等を行って所定の薄膜磁気ヘッドに仕上げ
る。ここで、（８）は上部磁性層（４）をスパッタ蒸着
するまでの間に成膜される絶縁層である。尚、本実施例
では下地用基板のみにＳＩＣセラミックスを用いた場合
について説明したが上部保護用基板と両方に用いても良
い。Thereon, an insulating layer f5) (Si, 02, thickness approximately 2 μm) as a protective layer is formed by mask sputtering. Finally, the upper protective substrate (7) (for example, glass) is bonded with an adhesive (6) such as epoxy resin (or glass may also be used), and after cutting, it is placed in a case, and the tape contact surface is processed.
A predetermined thin film magnetic head is completed by connecting lead wires, etc. Here, (8) is an insulating layer formed before the upper magnetic layer (4) is sputter-deposited. In this embodiment, SIC ceramics is used only for the base substrate, but it may be used for both the upper protective substrate and the base substrate.
この様にして出来た本発明の薄膜磁気ヘッド（この場合
１日トラックとする）と、ＳｉＣセラミックス基板を用
いていない従来タイプの薄膜磁気ヘッド（この場合、３
６トラツクとする）を比較するために夫々各トラックに
別々に電流を流してその最大許容電流をめる実験を行っ
た結果、従来薄膜磁気ヘッドの場合１ｉ７Ａ１６）ラッ
クｉＣセラミックスを用いた場合ｔ６９Ａ（１Ｂトラツ
ク平均）となった。尚、この実験で用いたＳｉＣセラミ
ックスの熱伝導率はＳ’ｌ単結晶の２倍以上の２７０
（Ｗ／ｍ −ｔ）である。二の様に、下地用基板にＳｊ
［セラミックスを用いることで最大許容電流は約１８％
程向上し、その上部保護基板にもＳｉＣセラミックスを
用いることで更に約５％向上させることが出来る。The thin film magnetic head of the present invention made in this way (in this case, 1 day track) and the conventional type thin film magnetic head that does not use a SiC ceramic substrate (in this case, 3 days track)
As a result of conducting an experiment to calculate the maximum allowable current by applying a current to each track separately in order to compare the maximum allowable current for a conventional thin-film magnetic head (1i7A16) and 69A (t69A for a conventional thin-film magnetic head using rack iC ceramics). 1B track average). The thermal conductivity of the SiC ceramics used in this experiment is 270, which is more than twice that of S'l single crystal.
(W/m −t). As shown in 2, Sj is placed on the base substrate.
[By using ceramics, the maximum allowable current is approximately 18%
This can be further improved by about 5% by using SiC ceramics for the upper protective substrate as well.
ところで、実際に薄膜磁気ヘッドに流す電流はその最大
許容電流より大幅に少ない値（例えば、最大許容電流の
５０％以下）に押さえる必要があるが、本発明のように
最大許容電流を向上させたことによって実用範囲で流し
得る電流値も高くなることから結゛果的に記録磁場の強
い高性能な薄膜磁気ヘッドを実現することが出来る。ま
た、従来タイプの薄膜磁気ヘッドと同じ値の電流を流し
た場合でも磁性層の昇温か引き起こす勝気特性の劣化が
少ない分だけその信頼性を向上させるこ′とが出来る。Incidentally, it is necessary to keep the current flowing through the thin film magnetic head to a value significantly lower than the maximum allowable current (for example, 50% or less of the maximum allowable current), but the present invention improves the maximum allowable current. This increases the current value that can be passed within a practical range, and as a result, it is possible to realize a high-performance thin film magnetic head with a strong recording magnetic field. Further, even when the same current value as that of a conventional type thin-film magnetic head is applied, the reliability can be improved to the extent that the deterioration of the strength characteristics caused by the temperature rise of the magnetic layer is reduced.
最後に、第５図辺ものは上部保護用基板（７）にＳｉＣ
セラミックスを用いた他の実施例を示し、この場合下地
用基板（１）にはＮ ５−−Ｚ ｎフェライト（即ち、
絶縁性磁性材）が用いられるため、下部磁性層（２）並
ひに、下地用基板（１）と導体１ｉｉｊ ｉ３）との間
に介在する絶縁層を省くことが出来、その他は第２図の
ものと同様の過程で製造される。Finally, the one on the side of Figure 5 has SiC on the upper protective substrate (7).
Another embodiment using ceramics is shown, in which the base substrate (1) is made of N5--Zn ferrite (i.e.,
Since an insulating magnetic material (insulating magnetic material) is used, it is possible to omit the lower magnetic layer (2) as well as the insulating layer interposed between the base substrate (1) and the conductor (1iij i3), and the rest is as shown in Figure 2. Manufactured using a process similar to that of
（へ）発明の効果(f) Effect of invention
Claims (2)
板上に、保護用基板を接着して構成される薄膜磁気ヘッ
ドであって、前記下地用基板と保護用基板の両方若しく
は片方に熱伝導率がＳｉ単結晶と同等か若しくはそれ以
上のセラミックス材料を用いた事を特徴とする薄膜磁気
ヘッド。(1) A thin film magnetic head constructed by adhering a protective substrate to a base substrate formed with a thin film magnetic head pattern, wherein heat conduction is conducted to both or one of the base substrate and the protective substrate. 1. A thin film magnetic head characterized by using a ceramic material having a coefficient equal to or higher than that of Si single crystal.
たセラミックスを用いた事を特徴とする特許請求の範囲
第１項記載の薄膜磁気ヘッド。(2) The thin film magnetic head according to claim 1, characterized in that the ceramic material is a ceramic containing SiC as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15232383A JPS6043214A (en) | 1983-08-19 | 1983-08-19 | Thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15232383A JPS6043214A (en) | 1983-08-19 | 1983-08-19 | Thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6043214A true JPS6043214A (en) | 1985-03-07 |
Family
ID=15538013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15232383A Pending JPS6043214A (en) | 1983-08-19 | 1983-08-19 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6043214A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6038101A (en) * | 1997-03-14 | 2000-03-14 | Kabushiki Kaisha Toshiba | Magnetic head and method of manufacturing magnetic head |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5278416A (en) * | 1975-12-24 | 1977-07-01 | Fujitsu Ltd | Thin-film integrated multiplex magnetic head |
| JPS5826308A (en) * | 1981-08-07 | 1983-02-16 | Matsushita Electric Ind Co Ltd | Thin film element parts |
-
1983
- 1983-08-19 JP JP15232383A patent/JPS6043214A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5278416A (en) * | 1975-12-24 | 1977-07-01 | Fujitsu Ltd | Thin-film integrated multiplex magnetic head |
| JPS5826308A (en) * | 1981-08-07 | 1983-02-16 | Matsushita Electric Ind Co Ltd | Thin film element parts |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6038101A (en) * | 1997-03-14 | 2000-03-14 | Kabushiki Kaisha Toshiba | Magnetic head and method of manufacturing magnetic head |
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