JPS6049650U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS6049650U JPS6049650U JP14258783U JP14258783U JPS6049650U JP S6049650 U JPS6049650 U JP S6049650U JP 14258783 U JP14258783 U JP 14258783U JP 14258783 U JP14258783 U JP 14258783U JP S6049650 U JPS6049650 U JP S6049650U
- Authority
- JP
- Japan
- Prior art keywords
- fet
- bipolar transistor
- terminal
- semiconductor equipment
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 239000002131 composite material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図及び第２図に本考案の一実施例を示す等価回路図
及び模式断面図、第３図は本考案半導体装置の外観例を
示す平面図、第４図は本考案の他の一実施例を示す等価
回路図である。
１・・・・・・半導体素子、２・・・・・・ＭＯＳ−Ｆ
ＥＴ、３・・・・・・バイポーラトランジスタ、１３・
・・・・・コレクタ端子、１４・・・・・・ゲート端子
、１５・・・・・・ベース端子、１６・・・・・・エミ
ッタ端子。1 and 2 are an equivalent circuit diagram and a schematic sectional view showing one embodiment of the present invention, FIG. 3 is a plan view showing an external appearance of the semiconductor device of the present invention, and FIG. 4 is another embodiment of the present invention. FIG. 2 is an equivalent circuit diagram showing an example. 1...Semiconductor element, 2...MOS-F
ET, 3... Bipolar transistor, 13.
... Collector terminal, 14 ... Gate terminal, 15 ... Base terminal, 16 ... Emitter terminal.
Claims (1)
トンラジスタを有し、前記ＭＯ５−ＦＥＴのドレインを
前記バイポーラトランジスタのコレクタに、前記ＭＯ３
−ＦＥＴのソースを前記バイポーラトランジスタのベー
スに電気的接続した１つの複合半導体素子に電極外部引
出し用端子としてＭＯＳ−ＦＥＴのゲート端子、バイポ
ーラトランジスタのベース端子、コレクタ端子、エミッ
タ端子を形成したことを特徴とする半導体装置。One MO5@FET and one bipolar transistor are included in the same substrate, and the drain of the MO5-FET is connected to the collector of the bipolar transistor, and the MO3
- The gate terminal of the MOS-FET, the base terminal, the collector terminal, and the emitter terminal of the bipolar transistor are formed as electrode external lead terminals in one composite semiconductor element in which the source of the FET is electrically connected to the base of the bipolar transistor. Characteristic semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14258783U JPS6049650U (en) | 1983-09-14 | 1983-09-14 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14258783U JPS6049650U (en) | 1983-09-14 | 1983-09-14 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6049650U true JPS6049650U (en) | 1985-04-08 |
Family
ID=30318558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14258783U Pending JPS6049650U (en) | 1983-09-14 | 1983-09-14 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6049650U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58212168A (en) * | 1982-04-01 | 1983-12-09 | ゼネラル・エレクトリツク・カンパニイ | MOS-FET gated thyristor integrated device |
-
1983
- 1983-09-14 JP JP14258783U patent/JPS6049650U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58212168A (en) * | 1982-04-01 | 1983-12-09 | ゼネラル・エレクトリツク・カンパニイ | MOS-FET gated thyristor integrated device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6049650U (en) | semiconductor equipment | |
| JPS59152750U (en) | semiconductor equipment | |
| JPS602832U (en) | semiconductor equipment | |
| JPS6020151U (en) | semiconductor integrated circuit | |
| JPS6016554U (en) | semiconductor equipment | |
| JPS58168149U (en) | transistor | |
| JPS6025146U (en) | semiconductor equipment | |
| JPS5980950U (en) | Relay contact protection circuit | |
| JPS5827936U (en) | semiconductor equipment | |
| JPS6117756U (en) | semiconductor equipment | |
| JPS5952715U (en) | differential circuit | |
| JPS60189122U (en) | Envelope detection circuit | |
| JPS6016556U (en) | semiconductor equipment | |
| JPS62138449U (en) | ||
| JPS61102057U (en) | ||
| JPS59152746U (en) | Power transistor element structure | |
| JPS60163744U (en) | Semiconductor integrated circuit device | |
| JPS58158520U (en) | Feedback amplifier circuit | |
| JPS58182438U (en) | semiconductor equipment | |
| JPS5918442U (en) | Hybrid integrated circuit device | |
| JPS60144325U (en) | semiconductor equipment | |
| JPS5996914U (en) | amplifier circuit | |
| JPS6083247U (en) | Microwave integrated circuit transistor circuit | |
| JPS606293U (en) | Electronic parts series | |
| JPS6049649U (en) | semiconductor equipment |