JPS6052013A - Photo-cvd device - Google Patents

Photo-cvd device

Info

Publication number
JPS6052013A
JPS6052013A JP16136483A JP16136483A JPS6052013A JP S6052013 A JPS6052013 A JP S6052013A JP 16136483 A JP16136483 A JP 16136483A JP 16136483 A JP16136483 A JP 16136483A JP S6052013 A JPS6052013 A JP S6052013A
Authority
JP
Japan
Prior art keywords
gas
film
window
reaction vessel
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16136483A
Other languages
Japanese (ja)
Inventor
Teruo Shibano
芝野 照夫
Kyusaku Nishioka
西岡 久作
Keiji Fujiwara
啓司 藤原
Hiromi Ito
博巳 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16136483A priority Critical patent/JPS6052013A/en
Publication of JPS6052013A publication Critical patent/JPS6052013A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488Protection of windows for introduction of radiation into the coating chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To keep the quantity of beams projected into a reaction vessel constant at all times by blowing a gas capable of removing a film formed to an optical introducing window against the window. CONSTITUTION:CF4 gas introduced into a film removing-gas reaction vessel 9 from a film removing-gas introducing port 8 is decomposed by high-frequency power fed from a high-frequency power supply 11, and reacts with a film shaped to a window 6 to form a gas component capable of removing the film. Gas pressure in the vicinity of the window 6 is kept at pressure lower than that in the film removing-gas reaction vessel 9 by the action of a film removing-gas discharge port 13, and the radicals of F formed in the vessel 9 are transported to a film removing-gas spray nozzle 12 and blown against the window 6. Accordingly, the film on the window 6 is removed by an etching reaction by the radicals of F.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体装置の製造工程等への応用が試みられ
つつある光CVD (Chemical Vapour
Deposition )装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to optical CVD (Chemical Vapor
Deposition) device.

〔従来技術〕[Prior art]

従来この種の装置として第1図に示すものがあった。図
において、1は膜形成反応容器、2は膜形成を行なうた
めの反応ガスの導入口、3は膜形成ガスの排気口、4は
発光源、5は反射板、6は光を反応容器1内へ導入する
窓、7は試料である。
A conventional device of this type is shown in FIG. In the figure, 1 is a film forming reaction vessel, 2 is an inlet for a reaction gas for forming a film, 3 is an exhaust port for a film forming gas, 4 is a light source, 5 is a reflector, and 6 is a light source for directing light to the reaction vessel. The window 7 to be introduced into the sample is a sample.

次に動作について説明する。膜形成ガス導入口2より反
応容器1に導入されたガスは、発光源4及び反射板5か
らの光の作用により分解反応を起こし、その結果、試料
7の上に薄膜が形成される。
Next, the operation will be explained. The gas introduced into the reaction vessel 1 through the film-forming gas inlet 2 undergoes a decomposition reaction due to the action of light from the light emitting source 4 and the reflecting plate 5, and as a result, a thin film is formed on the sample 7.

一方残ガスは、排気口3より排気される。On the other hand, the remaining gas is exhausted from the exhaust port 3.

従来の光CVD装置は以上のように構成されており、試
料7上だけでなく、反応容器1の器壁及び光の導入窓6
上にも膜が形成され、このうち、光の導入窓6上の膜の
形成は、光の透過率を低減せしめ、これにより、試料7
上の膜の形成を著しく阻害するという欠点があった。
The conventional photo-CVD apparatus is configured as described above, and the light is not only exposed on the sample 7 but also on the wall of the reaction vessel 1 and the light introduction window 6.
A film is also formed on the sample 7, and the film formed on the light introduction window 6 reduces the light transmittance.
This had the disadvantage that it significantly inhibited the formation of the upper film.

〔発明の概要〕[Summary of the invention]

この発明は上記のような従来のものの欠点を除去するた
めになされたもので、光導入窓に、これに形成される膜
を除去できるガスを吹き付けることにより、光導入窓上
への膜の形成を防止し、安定した膜形成が行なえる光C
VD装置を提供することを目的としている。
This invention was made in order to eliminate the drawbacks of the conventional ones as described above, and it is possible to form a film on the light introduction window by spraying a gas that can remove the film formed on the light introduction window. Light C that can prevent the formation of stable films.
The purpose is to provide a VD device.

〔発明の実施例〕[Embodiments of the invention]

以下、この発明の一実施例を図について説明する。第2
図は本発明の一実施例による光CVD装置を示し、図に
おいて、第1図と同一符号は同一のものを示す。20は
本実施例において付加された曇り防止機構であり、該機
構20において、光導入窓6上に形成される膜を除去す
るためのCF4等のガスは、膜除去ガス導入口8より膜
除去ガス反応容器9へ導入される。高周波電極10はこ
の容器9内のガスに高周波電源11からの電力を供給す
るためのものである。また12はこの反応容器9内で生
成されたガスを光導入窓6に吹きつけるための吹きつけ
ノズルであり、13は吹きつけられたガスの排気口であ
る。
An embodiment of the present invention will be described below with reference to the drawings. Second
The figure shows an optical CVD apparatus according to an embodiment of the present invention, and in the figure, the same reference numerals as in FIG. 1 indicate the same parts. Reference numeral 20 denotes an anti-fogging mechanism added in this embodiment. In this mechanism 20, a gas such as CF4 for removing the film formed on the light introduction window 6 is supplied to the film removal gas through the film removal gas inlet 8. The gas is introduced into the reaction vessel 9. The high frequency electrode 10 is for supplying electric power from the high frequency power source 11 to the gas in the container 9. Further, 12 is a blowing nozzle for blowing the gas generated in the reaction vessel 9 onto the light introduction window 6, and 13 is an exhaust port for the blown gas.

次に動作について説明する。Next, the operation will be explained.

膜除去ガス導入口8より膜除去ガス反応容器9内へ導入
されたCF4ガスは、高周波電極10を介して高周波電
源11より供給される高周波電力により分解されてFの
ラジカルを発生する。即ち、窓6に形成される膜と反応
してこの膜を除去できるようなガス成分が生成されるこ
ととなる。そして膜除去ガス排気口13の作用で、窓6
付近のガス圧力を、膜除去ガス反応容器9内のガス圧力
より低く保つようにすれば、容器9内で生成されたFの
ラジカルは膜除去ガス吹きイ1けノズル12へと輸送さ
れ、窓6に吹きつけられることになる。
The CF4 gas introduced into the membrane removal gas reaction vessel 9 through the membrane removal gas inlet 8 is decomposed by high frequency power supplied from a high frequency power supply 11 via a high frequency electrode 10 to generate F radicals. That is, a gas component is generated that can react with the film formed on the window 6 and remove this film. Then, by the action of the membrane removal gas exhaust port 13, the window 6
If the gas pressure in the vicinity is kept lower than the gas pressure in the membrane removal gas reaction vessel 9, the F radicals generated in the vessel 9 will be transported to the membrane removal gas blowing nozzle 12, and the 6 will be sprayed.

その結果窓6上に形成される膜はこのFのラジカルによ
るエツチング反応により除去される。これにより窓6は
富に膜の形成されていない状態に維持される。一方エソ
チング反応の生成物は、膜除去ガス排気口13より、膜
形成反応容器1外へ排出される。
As a result, the film formed on the window 6 is removed by an etching reaction caused by the F radicals. Thereby, the window 6 is maintained in a state in which no film is formed. On the other hand, the products of the ethoching reaction are discharged to the outside of the membrane forming reaction vessel 1 through the membrane removal gas exhaust port 13.

なお、上記実施例では高周波電力の印加により、ガスを
分解して窓上に形成される膜を除去できるガス成分を作
り出すようにしたが、膜除去ガスとしては高周波電力に
より分解したものでなくとも膜の除去が可能なガスであ
ればよく、この場合高周波電極10及び反応容器9は不
要となる。
In addition, in the above embodiment, the gas was decomposed by applying high-frequency power to create a gas component capable of removing the film formed on the window, but the film-removing gas does not need to be decomposed by high-frequency power. Any gas that can remove the film may be used, and in this case, the high frequency electrode 10 and the reaction vessel 9 are unnecessary.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、光導入窓に、これに
形成される股を除去できるガスを吹き付けるようにした
ので、光導入窓上への膜の形成を防止でき、これにより
反応容器内への光の照射量を常に一定に保つことができ
、安定した膜の形成が可能となる効果がある。
As described above, according to the present invention, since the light introduction window is sprayed with a gas capable of removing the crotch formed on the light introduction window, it is possible to prevent the formation of a film on the light introduction window, thereby preventing the reaction vessel from forming a film. The amount of light irradiated inside can be kept constant at all times, which has the effect of making it possible to form a stable film.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の光CVD装置を示す図、第2図はこの発
明の一実施例による光CVD装置を示す図である。 1・・・反応容器、2・・・膜形成ガス導入口、3・・
・膜形成ガス排気口、4・・・発光源、5・・・反射板
、6・・・光導入窓、7・・・試料、20・・・曇り防
止機構、8・・・膜除去ガス導入口、9・・・膜除去ガ
ス反応容器、10・・・高周波電極、11・・・高周波
電源、12・・・膜除去ガス吹き付はノズル、13・・
・膜除去ガス排気口。 なお図中、同一符号は同−又は相当部分を示す。 第1図 ′l 第2図
FIG. 1 is a diagram showing a conventional optical CVD apparatus, and FIG. 2 is a diagram showing an optical CVD apparatus according to an embodiment of the present invention. 1... Reaction container, 2... Film forming gas inlet, 3...
・Film forming gas exhaust port, 4... Light emitting source, 5... Reflector, 6... Light introduction window, 7... Sample, 20... Anti-fogging mechanism, 8... Film removing gas Introduction port, 9... Membrane removal gas reaction vessel, 10... High frequency electrode, 11... High frequency power source, 12... Nozzle for spraying film removal gas, 13...
・Membrane removal gas exhaust port. In the drawings, the same reference numerals indicate the same or equivalent parts. Figure 1 'l Figure 2

Claims (2)

【特許請求の範囲】[Claims] (1)光を利用した化学気相反応により試料に成膜を行
なう光CVT)装置であって、内部に試料をするための
光導入窓と、該光導入窓への膜の形成を防ぐ曇り防+l
[構とを備えたことを特徴とする光CVr)装置。
(1) An optical CVT (optical CVT) device that forms a film on a sample through a chemical vapor phase reaction using light, which includes a light introduction window for depositing the sample inside and a fogging that prevents the formation of a film on the light introduction window. Defense +l
[Optical CVr) device characterized by comprising:
(2)上記曇り防止機構が、上記光導入窓に形成される
膜を除去できるガスを該窓に吹き付けるノズルを備えた
ものであることを特徴とする特許請求の範囲第1項記載
の光CVD装置。
(2) The optical CVD according to claim 1, wherein the anti-fogging mechanism is equipped with a nozzle that sprays a gas onto the window that can remove a film formed on the light introduction window. Device.
JP16136483A 1983-08-31 1983-08-31 Photo-cvd device Pending JPS6052013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16136483A JPS6052013A (en) 1983-08-31 1983-08-31 Photo-cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16136483A JPS6052013A (en) 1983-08-31 1983-08-31 Photo-cvd device

Publications (1)

Publication Number Publication Date
JPS6052013A true JPS6052013A (en) 1985-03-23

Family

ID=15733679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16136483A Pending JPS6052013A (en) 1983-08-31 1983-08-31 Photo-cvd device

Country Status (1)

Country Link
JP (1) JPS6052013A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049794A (en) * 1986-04-07 1991-09-17 Nissan Motor Company, Limited Automotive wiper control system with fail-safe feature for preventing burn-in of wiper motor
US5164034A (en) * 1989-09-08 1992-11-17 Tokyo Electron Limited Apparatus and method for processing substrate
US5616181A (en) * 1994-11-24 1997-04-01 Mitsubishi Denki Kabushiki Kaisha MBE apparatus and gas branch piping apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049794A (en) * 1986-04-07 1991-09-17 Nissan Motor Company, Limited Automotive wiper control system with fail-safe feature for preventing burn-in of wiper motor
US5164034A (en) * 1989-09-08 1992-11-17 Tokyo Electron Limited Apparatus and method for processing substrate
US5616181A (en) * 1994-11-24 1997-04-01 Mitsubishi Denki Kabushiki Kaisha MBE apparatus and gas branch piping apparatus

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