JPS6058542A - gas sensor - Google Patents
gas sensorInfo
- Publication number
- JPS6058542A JPS6058542A JP16670283A JP16670283A JPS6058542A JP S6058542 A JPS6058542 A JP S6058542A JP 16670283 A JP16670283 A JP 16670283A JP 16670283 A JP16670283 A JP 16670283A JP S6058542 A JPS6058542 A JP S6058542A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas sensor
- ultrafine particle
- selectivity
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はガスセンサに係り、特にガス選択性に優れた金
属酸化物超微粒子ガスセンサ素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a gas sensor, and particularly to a metal oxide ultrafine particle gas sensor element with excellent gas selectivity.
超微粒子ガスセンサはガス中蒸発法による製法が知られ
ている（特開昭５５−２７９２５ほか）。Ultrafine particle gas sensors are known to be manufactured by evaporation in gas (Japanese Patent Laid-Open No. 55-27925, etc.).
しかしガス中蒸発法による超微粒子膜は、膜のバッキン
グ密度が極めて小さく強度が弱いという欠点の他、超微
粒子化によるガス選択性の向上もみられない。However, the ultrafine particle membrane produced by the in-gas evaporation method has the disadvantage that the backing density of the membrane is extremely small and its strength is weak, and there is no improvement in gas selectivity due to ultrafine particle formation.
上記以外の薄膜型ガスセンサはいずれもガス選択性が悪
く、股布ガス（ＣＨ４）用ガスセンサ素子としては実用
的でない。All thin film gas sensors other than those described above have poor gas selectivity and are not practical as gas sensor elements for crotch gas (CH4).
本発明の目的は、超微粒子化することによってガス選択
性を高めた薄膜型ガスセンサ素子全提供することに５あ
る。It is an object of the present invention to provide a thin film type gas sensor element with improved gas selectivity by ultrafine particle formation.
スパッタリング法によって作製された超微粒子膜は絶縁
基板上で十分な強度を有し、かつ膜厚が十分アれば、高
いガス選択性を持たせることができる。これは超微粒子
膜のガス透過性の差によるものと考えられるが・本発明
の範囲で高ガス選択性のスパッタリング超微粒子膜全得
ることができる。If the ultrafine particle film produced by sputtering has sufficient strength on an insulating substrate and is sufficiently thick, it can have high gas selectivity. Although this is thought to be due to the difference in gas permeability of the ultrafine particle membranes, all sputtered ultrafine particle membranes with high gas selectivity can be obtained within the scope of the present invention.
以下、図面音用いて本発明を具体的に説明する。 The present invention will be specifically described below with reference to the drawings.
第１図に５ｎ０２超微粒子スパッタ膜の膜厚を５μｍと
したときの粒径とガス選択性の関連を示す・動作温度４
５０’Ｃｉｊ粒径が１μｍを超えるとガス選択性が著し
く低下する。Figure 1 shows the relationship between particle size and gas selectivity when the film thickness of the 5n02 ultrafine particle sputtered film is 5 μm.Operating temperature 4
When the 50'Cij particle size exceeds 1 μm, gas selectivity is significantly reduced.
第２図に５ｎＱ２超微粒子スパッタ膜の膜厚とガス選択
性の関係を示す。膜厚が１μｍｆ、超えるとガス選択性
が著しく向上する。FIG. 2 shows the relationship between the film thickness and gas selectivity of the 5nQ2 ultrafine particle sputtered film. When the film thickness exceeds 1 μmf, gas selectivity is significantly improved.
本発明によれば、金属酸化物スパッタ膜のメタンガスに
対する選択感受性を高めることができるので高性能ガス
センサ素子として使用できる。According to the present invention, the selective sensitivity of the metal oxide sputtered film to methane gas can be increased, so that it can be used as a high-performance gas sensor element.
Claims (1)
以下の金属酸化物超粒子によって絶縁物の基板上に構成
することを特徴とするガスセンサ。 ２、特許請求の範囲第１項において、上記スノくツタリ
ングｌ’ｊ： ０．０４Ｔｏｒｒ以上のガス圧で行なう
ことを特徴とするガスセンサ。 ３、特許請求の範囲第１項において、上記スノくツタリ
ング法によって作製した膜の膜厚が１μｍ以上あること
全特徴とするガスセンサ。[Claims] 1. Produced by sputtering method, particle size is 1 μm
A gas sensor comprising the following metal oxide superparticles on an insulating substrate. 2. The gas sensor according to claim 1, characterized in that the above-mentioned snow tsuttering l'j is performed at a gas pressure of 0.04 Torr or more. 3. A gas sensor as set forth in claim 1, characterized in that the film produced by the above-mentioned snow vine method has a film thickness of 1 μm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16670283A JPS6058542A (en) | 1983-09-12 | 1983-09-12 | gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16670283A JPS6058542A (en) | 1983-09-12 | 1983-09-12 | gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6058542A true JPS6058542A (en) | 1985-04-04 |
Family
ID=15836167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16670283A Pending JPS6058542A (en) | 1983-09-12 | 1983-09-12 | gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6058542A (en) |
-
1983
- 1983-09-12 JP JP16670283A patent/JPS6058542A/en active Pending
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