JPS6074507A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6074507A
JPS6074507A JP58180623A JP18062383A JPS6074507A JP S6074507 A JPS6074507 A JP S6074507A JP 58180623 A JP58180623 A JP 58180623A JP 18062383 A JP18062383 A JP 18062383A JP S6074507 A JPS6074507 A JP S6074507A
Authority
JP
Japan
Prior art keywords
film
silicon
single crystal
single crystalline
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58180623A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6362893B2 (2
Inventor
Iwao Higashinakagaha
東中川　巌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58180623A priority Critical patent/JPS6074507A/ja
Publication of JPS6074507A publication Critical patent/JPS6074507A/ja
Publication of JPS6362893B2 publication Critical patent/JPS6362893B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Recrystallisation Techniques (AREA)
JP58180623A 1983-09-30 1983-09-30 半導体装置の製造方法 Granted JPS6074507A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58180623A JPS6074507A (ja) 1983-09-30 1983-09-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58180623A JPS6074507A (ja) 1983-09-30 1983-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6074507A true JPS6074507A (ja) 1985-04-26
JPS6362893B2 JPS6362893B2 (2) 1988-12-05

Family

ID=16086445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58180623A Granted JPS6074507A (ja) 1983-09-30 1983-09-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6074507A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590857U (ja) * 1991-05-29 1993-12-10 株式会社小桜建装 差し込みプラグ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020096099A1 (ko) * 2018-11-09 2020-05-14 주식회사 루닛 기계 학습 방법 및 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590857U (ja) * 1991-05-29 1993-12-10 株式会社小桜建装 差し込みプラグ

Also Published As

Publication number Publication date
JPS6362893B2 (2) 1988-12-05

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