JPS6074509A - Cvd device under normal pressure - Google Patents

Cvd device under normal pressure

Info

Publication number
JPS6074509A
JPS6074509A JP58180257A JP18025783A JPS6074509A JP S6074509 A JPS6074509 A JP S6074509A JP 58180257 A JP58180257 A JP 58180257A JP 18025783 A JP18025783 A JP 18025783A JP S6074509 A JPS6074509 A JP S6074509A
Authority
JP
Japan
Prior art keywords
gas
nozzle
ring
main body
nozzle main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58180257A
Other languages
Japanese (ja)
Inventor
Takeo Ishii
石井　武夫
Tsutomu Hanno
勉 半野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58180257A priority Critical patent/JPS6074509A/en
Publication of JPS6074509A publication Critical patent/JPS6074509A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Abstract

PURPOSE:To improve the mixed status of reacting gas making reacted status of gas favorable by a method wherein a ring is provided inside a nozzle main body to make the flowing direction of the second gas constant while a spare gas reservoir is provided in the nozzle main body above the ring. CONSTITUTION:The first gas line 24 is connected to the upper part of a nozzle main body 23 and the lower end of the gas line 24 is made into the first gas line nozzle 25 coming into contact with a reaction chamber 26 inside a bell jar 21. The second gas line 27 is connected to the upper side of the nozzle main body 23. A spare gas reservoir 28 is provided inside the nozzle main body 23 and a ring 29 is provided inside the nozzle main body 23 to make the flowing direction of the second gas constant by means of providing the lower end of the ring 29 at the same position as that of the opening of the first gas line nozzle 25. The lower part of the ring 29 is tapered to diminish the inside diameter making it into the second gas line nozzle 30. A buffer 31 is arranged inside a bell ar 21 below the nozzle main body 23.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は☆エバー上にＰ２Ｏ膜またはＣＶ　Ｄ　ｌｉｄ
を形成するために使用される常圧ＣＶＤ装置に係り、特
に膜厚分布が均一な形成菌を得るのに好適な常圧ＣＶＤ
装置に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention provides a P2O film or a CVD lid on
Regarding the atmospheric pressure CVD equipment used to form
Regarding equipment.

〔発明の背景〕[Background of the invention]

従来、−一に使用されている常圧ＣＶＤ’ＡＭの主要部
を構成する反応炉部は、第１図に示すような構造となっ
ている。ペルジャーｌの上部には、反応ガスが漏れない
ようＫＯリング２で気密シールされてノズル本体３が取
付けられている。ノズル本体３の中央部には第１ガス系
４および第１ガス系ノズル５が設けられ、またノズル本
体３の上部側面には第２ガス系６が設けられ、ノズル本
体３の中空部７に流出口が接し、中空部７の下部が第２
ガス系ノズル８となっている。ノズル本体３の下方のペ
ルジャー１内にはバッファー９が設けられ、ペルジャー
ｌおよびノズル本体３との間の空間が反応室１０を構成
している。The reactor section, which constitutes the main part of the atmospheric pressure CVD'AM conventionally used in -1, has a structure as shown in FIG. A nozzle body 3 is attached to the upper part of the Pel jar 1, hermetically sealed with a KO ring 2 to prevent leakage of reaction gas. A first gas system 4 and a first gas nozzle 5 are provided in the center of the nozzle body 3, and a second gas system 6 is provided in the upper side of the nozzle body 3. The outlet is in contact with the lower part of the hollow part 7, and the lower part of the hollow part 7 is the second
This is a gas nozzle 8. A buffer 9 is provided in the Pel jar 1 below the nozzle main body 3, and the space between the Pel jar 1 and the nozzle main body 3 constitutes a reaction chamber 10.

従って、第１ガス系４を介して流入する第１ガスは、ノ
ズル本体３の上部から入シ、ノズル本体３の中央部を通
り、反応室ＩＯに接した第１ガス系ノズル５の流出口か
らバッファー９上に垂直に流出する。Therefore, the first gas flowing through the first gas system 4 enters from the upper part of the nozzle body 3, passes through the center of the nozzle body 3, and flows through the outlet of the first gas system nozzle 5 in contact with the reaction chamber IO. and flows vertically onto buffer 9.

一方、第２ガス系６を介して流入する１＄２ガスは、ノ
ズル本体３の横部から水平方向に流入し、ノズル本体３
の中空部７で下方に向きを変え、ノ（ソファ−９上に流
出するようになっている。しかし、実際には第２ガスの
流れを中空部７内で十分直角に曲げることが丙！Ｉｉ６
でおシ、第２ガスを第２ガス、嘔ノズル８からバッファ
ー９上に垂直に流出させることができない。その結果、
流出方向が特定の方向に片をって流出するため、反応ｕ
ｌＯ内での第１ガス系ノズル５から流出した第１ガスと
第２ガスとが良く混合せず反応状態が悪くなるという欠
点があった。On the other hand, the 1$2 gas flowing through the second gas system 6 flows horizontally from the side of the nozzle body 3 and flows into the nozzle body 3.
It changes its direction downward in the hollow part 7 and flows out onto the sofa 9. However, in reality, it is important to bend the flow of the second gas at a sufficiently right angle in the hollow part 7! Ii6
Unfortunately, the second gas cannot flow out vertically from the second gas nozzle 8 onto the buffer 9. the result,
Since the outflow direction is partial to a specific direction, the reaction u
There was a drawback that the first gas and the second gas flowing out from the first gas nozzle 5 in the IO did not mix well, resulting in poor reaction conditions.

また第１ガスは、第１ガス系ノズル５から直接ペルジャ
ーｌ内に流出するのに対して、第２ガスは、ノズル本体
３の内側に接して設けられたＨＥ　２ガス系ノズル８か
ら流出するので、Ｍ　ｌカス系ノズル５、第２ガス糸ノ
ズル８はそれぞれ断面積が一定で絞り効果を有せず、良
好な混合状態が得られなかった。その結果、従来の常圧
ＣＶＩ）装置でＣ゛νＤνＤ加工うと、バッファー９の
一部に８ｉ０．粉末が堆積するという欠点があった。Further, the first gas directly flows out from the first gas system nozzle 5 into the Pelger l, whereas the second gas flows out from the HE 2 gas system nozzle 8 provided in contact with the inside of the nozzle body 3. Therefore, the M1 waste nozzle 5 and the second gas thread nozzle 8 each had a constant cross-sectional area and did not have a throttling effect, and a good mixing state could not be obtained. As a result, when C゛νDνD processing is performed using a conventional atmospheric pressure CVI) device, a part of the buffer 9 has an 8i0. The disadvantage was that powder was deposited.

〔発明の目的〕 本発明の目的は、第１ガス糸ノズルおよび第２ガス系ノ
ズルから流出する２施類の反応ガスの流出方向と流量と
を整えることによυ、前記反応ガスの混合状態を改善し
、反応室内でのガスの反応状態を良好にし得る常圧ＣＶ
Ｄ装置を提供することにある。[Object of the Invention] The object of the present invention is to adjust the flow direction and flow rate of the two types of reaction gases flowing out from the first gas line nozzle and the second gas line nozzle, thereby improving the mixed state of the reaction gases. Atmospheric pressure CV that can improve gas reaction conditions in the reaction chamber
D device.

〔発明の概要〕[Summary of the invention]

本発明は、中央部に第１ガス系を、上部側面に第２ガス
系を付設してなるノズル本体をペルジャーの上部に配設
してなる常圧ＣＶ　Ｉ）装置において、前記ノズル本体
の内側に第２ガスの流出方向を一定にするためのリング
を設け、かつこのリングの上方のノズル本体内にガス溜
め予備室を設けたことを特徴とする。The present invention provides an atmospheric pressure CV device (I) in which a nozzle body having a first gas system attached to the center part and a second gas system attached to the upper side surface is disposed at the top of a Pel jar. The present invention is characterized in that a ring is provided to keep the outflow direction of the second gas constant, and a gas reservoir preliminary chamber is provided in the nozzle body above the ring.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第２図により説明する。内部
を真空に保つためのペルジャー２１の上部には、０リン
グ２２により気密シールされてノズル本体２３が固着さ
れている。ノズル本体２３の上部には第１ガス系２４が
接続され、第１ガス糸２４の下端は第１ガス系ノズル２
５となってお）、その端部はペルジャー２１の内部の反
応室２６に接して設けられている。ノズル本体２３の上
部　３一 定にするためのリング２９が、その下端部が第１ガス系
ノズル２５の開口部と同位１ｔになるように設けられて
いる。リング２９の下部は内径が小さくなっており、第
２ガス系ノズル３０を構成している。ノズル本体２３の
下方のペルジャー２１内にはバッファー３１が配設され
ている。An embodiment of the present invention will be described below with reference to FIG. A nozzle body 23 is fixed to the upper part of the Pel jar 21, which is used to maintain a vacuum inside, and is hermetically sealed with an O-ring 22. A first gas system 24 is connected to the upper part of the nozzle body 23, and the lower end of the first gas thread 24 is connected to the first gas system nozzle 2.
5), and its end is provided in contact with the reaction chamber 26 inside the Pelger 21. A ring 29 for keeping the upper part of the nozzle body 23 constant is provided so that its lower end is at the same level 1t as the opening of the first gas nozzle 25. The lower part of the ring 29 has a smaller inner diameter and constitutes a second gas nozzle 30. A buffer 31 is disposed within the Pelger 21 below the nozzle body 23.

このように、第２ガス系２７から流入した第２ガスをノ
ズル本体２３の内側のガス溜め予備室２８内に流出させ
、かつリング２９で流路を絞ってい□　るので、バッフ
ァー３Ｉ上に均一に第２ガスを流出させることができる
。In this way, the second gas flowing in from the second gas system 27 flows out into the gas reservoir preliminary chamber 28 inside the nozzle body 23, and the flow path is narrowed by the ring 29, so that the second gas flows uniformly over the buffer 3I. The second gas can be allowed to flow out.

なお、仮シリング２９の形状を絞り形状の他、羽根形状
にするなど種々χ更することにより、第１ガス系ノズル
２５および第２ガス系ノズル３０から噴出するガスの流
出方向と流量を調整し、反応室２６内でのガスの反応状
態全良好にすることができる。Note that by changing the shape of the temporary sill 29 in various ways, such as changing it to a diaphragm shape or a vane shape, the outflow direction and flow rate of the gas ejected from the first gas system nozzle 25 and the second gas system nozzle 30 can be adjusted. , the reaction state of the gas in the reaction chamber 26 can be made completely favorable.

〔発明の効果〕〔Effect of the invention〕

−今　一 本発明によれば、第１ガス系ノズルと同位値に第２ガス
の流出方向を一定にするだめのリングを設け、かつこの
リングの上方にガス溜め予備室を設けた構成よりなるの
で、館ｌガスおよび第２ガスの混合状態が極めて良好で
バッファーの一部分に８４０２粉末を堆積する仁とがな
く、均一な膜厚分布のウェハーを得ることができる。- Now, according to the present invention, a ring is provided at the same level as the first gas system nozzle to keep the outflow direction of the second gas constant, and a gas reservoir preliminary chamber is provided above this ring. Therefore, the mixed state of the first gas and the second gas is very good, and there is no deposit of 8402 powder on a part of the buffer, making it possible to obtain a wafer with a uniform film thickness distribution.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の常圧ＣＶＤ装置の要部断面図、第２図は
本発明になる常圧ＣＶｉＪ！置の一実施例を示す要部断
面図である。 ２１・・・・ペルジャー、２３・・・・ノズル本体、２
４・・・・第１ガス系、２５・・・・第１ガス系ノズル
、２６・・反応室、２７・・・、第２ガス系、２８・・
・・ガス溜め予備室、２９．−・・リング、３１・・・
・バッファー。 代理人　弁理士　高　橋　明　夫 第２霞FIG. 1 is a sectional view of the main parts of a conventional atmospheric pressure CVD apparatus, and FIG. 2 is an ordinary pressure CViJ! according to the present invention! FIG. 2 is a sectional view of a main part showing an embodiment of the device. 21... Pelger, 23... Nozzle body, 2
4...First gas system, 25...First gas system nozzle, 26...Reaction chamber, 27..., Second gas system, 28...
...Gas reservoir spare room, 29. -...Ring, 31...
·buffer. Agent Patent Attorney Akio Takahashi Kasumi Daini

Claims (1)

【特許請求の範囲】[Claims] 中央部に第１ガス系を、上部側面に第２ガス系を付設し
てなるノズル本体をペルジャーの上部に配設してなる常
圧ＣＶＩ）装置において、前記ノズル本体の内側に第２
ブスの流出方向を一定にするためのリングを設け、かつ
このリングの上方のノズル本体内にガス溜め予備室を設
けたことを特徴とする常圧ＣＶＩ）装置。In a normal pressure CVI) device in which a nozzle body having a first gas system attached to the center and a second gas system attached to the upper side is disposed at the top of the Pel jar, a second gas system is attached inside the nozzle body.
1. An atmospheric pressure CVI) device, characterized in that a ring is provided for making the outflow direction of the bus constant, and a gas reservoir preliminary chamber is provided in the nozzle body above the ring.
JP58180257A 1983-09-30 1983-09-30 Cvd device under normal pressure Pending JPS6074509A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58180257A JPS6074509A (en) 1983-09-30 1983-09-30 Cvd device under normal pressure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58180257A JPS6074509A (en) 1983-09-30 1983-09-30 Cvd device under normal pressure

Publications (1)

Publication Number Publication Date
JPS6074509A true JPS6074509A (en) 1985-04-26

Family

ID=16080093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58180257A Pending JPS6074509A (en) 1983-09-30 1983-09-30 Cvd device under normal pressure

Country Status (1)

Country Link
JP (1) JPS6074509A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961399A (en) * 1988-03-22 1990-10-09 U.S. Philips Corporation Epitaxial growth reactor provided with a planetary support

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49126271A (en) * 1973-04-04 1974-12-03
JPS55132035A (en) * 1979-03-30 1980-10-14 Wacker Chemitronic Pure semiconductor material* method of precipitating silidon and nozzle for executing same method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49126271A (en) * 1973-04-04 1974-12-03
JPS55132035A (en) * 1979-03-30 1980-10-14 Wacker Chemitronic Pure semiconductor material* method of precipitating silidon and nozzle for executing same method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961399A (en) * 1988-03-22 1990-10-09 U.S. Philips Corporation Epitaxial growth reactor provided with a planetary support

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